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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Advanced Heterogeneous Integration Enabled by 3D Freestanding Membranes—From Material Growths to Applications

For the future of electronics such as bioelectronics, 3D integrated electronics, and bendable electronics, the need for flexibility and stackability of electronic products has substantially grown up. However, conventional wafer-based single-crystalline semiconductors cannot catch up with such trends because they are bound to thick rigid wafers such that they are neither flexible nor stackable. Although polymer-based organic electronic materials are more compatible as they are mechanically compliant and less costly than inorganic counterparts, their electronic/photonic performance is substantially inferior to that of single-crystalline inorganic materials. Such performance-mechanical compliance dilemma could be resolved by developing methods to obtain cheap, flexible, stackable, single-crystalline inorganic systems. Such dream electronic systems could be realized by producing single-crystalline freestanding membranes. For the past few decades, various layer transfer techniques (a.k.a layer liftoff techniques) have been developed to produce single-crystalline freestanding membranes. In today's talk, I will present the survey of the layer liftoff techniques and go over how these strategies unlock new ways of manufacturing advanced electronic systems. In addition, I will introduce unprecedented artificial heterostructure devices enabled by stacking of those freestanding 3D material membranes, e.g., the world's smallest vertically-stacked full-color micro-LEDs, the world's best multiferroic devices, chip-less wireless e-skin, and reconfigurable hetero-integrated chips with AI accelerators.

Kim, Jeehwan↗
DOE OSTI2022

Advanced Heterogeneous Integration Enabled by 3D Freestanding Membranes—From Material Growths to Applications

For the future of electronics such as bioelectronics, 3D integrated electronics, and bendable electronics, the need for flexibility and stackability of electronic products has substantially grown up. However, conventional wafer-based single-crystalline semiconductors cannot catch up with such trends because they are bound to thick rigid wafers such that they are neither flexible nor stackable. Although polymer-based organic electronic materials are more compatible as they are mechanically compliant and less costly than inorganic counterparts, their electronic/photonic performance is substantially inferior to that of single-crystalline inorganic materials. Such performance-mechanical compliance dilemma could be resolved by developing methods to obtain cheap, flexible, stackable, single-crystalline inorganic systems. Such dream electronic systems could be realized by producing single-crystalline freestanding membranes. For the past few decades, various layer transfer techniques (a.k.a layer liftoff techniques) have been developed to produce single-crystalline freestanding membranes. In today's talk, I will present the survey of the layer liftoff techniques and go over how these strategies unlock new ways of manufacturing advanced electronic systems. In addition, I will introduce unprecedented artificial heterostructure devices enabled by stacking of those freestanding 3D material membranes, e.g., the world's smallest vertically-stacked full-color micro-LEDs, the world's best multiferroic devices, chip-less wireless e-skin, and reconfigurable hetero-integrated chips with AI accelerators.

Kim, Jeehwan↗
DOE OSTI2024

Direct Laser Writing Crystal Polymorphs of Organic Semiconductors for Phase Change Electronics

The many diverse polymorphic behaviors observed in organic electronic materials offer opportunities to modulate electronic properties through reversibly switching crystal structures. Here, we access the prolific polymorphism observed in two-dimensional quinoidal terthiophene via laser writing to locally heat and direct the phase transitions. We access a metastable polymorph IV through rapid cooling and observe distinct symmetry as well as packing through grazing incidence X-ray diffraction (GIXD). Using our open-source PolyChemPrint patterning platform, we direct laser heating to initiate the IV-I transition, switching the conductance by >2 orders of magnitude. Here, this is confirmed via a combination of GIXD and Raman spectroscopy. Finally, we demonstrate switching of transistor devices as well as discrete tuning of conductance via laser writing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1980

The materials processing research base of the Materials Processing Center

The goals and activities of the center are discussed. The center activities encompass all engineering materials including metals, ceramics, polymers, electronic materials, composites, superconductors, and thin films. Processes include crystallization, solidification, nucleation, and polymer synthesis.

Flemings, M. C.↗
DOE OSTI2022

Hydrogenated and Carbon-coated Na2Ti6O13 Nanowires as High-Rate Anode Materials for Lithium Ion Batteries

The main disadvantage for sodium titanate as an anode material for LIBs is its low electronic conductivity, resulting in poor rate capability. Several approaches have been taken in an attempt to improve the electronic conductivity of sodium/lithium titanate, such as electronic material coating/mixing, ionic doping, comminution, etc.; but as of yet there has been no uniform carbon coating reported on sodium titanate for LIBs. In this work, we detail a facile technique to create uniform thin carbon coating layers on Na2Ti6O13 nanowires (NTO-C). In addition, we also explored self-doped Ti3+ on carbon coated Na2Ti6O13 nanowires (H-NTO-C) in an effort to further improve its electronic conductivity. The detailed results of the synthesis, characterization, and electrochemical performance of the NTO-based materials (NTO, NTO-C and H-NTO-C) will be presented.

25 ENERGY STORAGE↗
DOE OSTI2025

Interacting spin and charge density waves in the kagome metal FeGe

Unveiling the interplay between spin density wave (SDW) and charge density wave (CDW) orders in correlated electron materials is important in obtaining a comprehensive understanding of their electronic, structural, and magnetic properties. Kagome lattice materials are interesting because their flat electronic bands, Dirac points, and Van Hove singularities can enable a variety of exotic electronic and magnetic phenomena. The kagome metal FeGe (the B35 phase), which exhibits a CDW order deep within an A-type antiferromagnetic (AFM) phase, was found to respond dramatically to postgrowth annealing—with the ability to tune the CDW repeatedly from long-range order to negligible order. Additionally, neutron scattering studies suggest that incommensurate magnetic peaks that onset at 𝑇 Canting = 𝑇 SDW ≈ 60 K in the system arise from a SDW order instead of the AFM double-cone structure. Here, in this study, we use inelastic neutron scattering to show that two distinct spin excitations exist below 𝑇 Canting corresponding to two coexisting magnetic orders in the system in both sets of annealed samples with and without CDW. While CDW order or negligible order can dramatically affect the onset temperature of 𝑇 Canting and elastic incommensurate magnetic scattering, its impact on low-energy spin fluctuations is more limited. In both samples, a pair of gapless incommensurate spin excitations arising from the SDW order wave vector coexist with gapped commensurate spin waves from the A-type AFM order across 𝑇 Canting . The low-energy spin excitations for both samples couple dynamically to the lattice through enhanced magnetic scattering intensity on cooling below 𝑇 CDW , regardless of the status of the static long-range CDW order. The incommensurate SDW order in the long-range CDW ordered sample also induces a tiny in-plane lattice distortion of the kagome lattice that is absent in the negligible CDW ordered sample, in a way that is different from the previously known SDW and CDW ordering materials.

charge density waves↗
DOE OSTI2025

Stacking polymorphism of PtSe 2 : its implication to layer-dependent metal-insulator transitions

Using diffusion Monte Carlo (DMC) and density functional theory (DFT) calculations, we examine the structural stability and interlayer binding properties of PtSe 2 . Our DMC study reveals that AA and AB-r bilayer stacking modes are nearly degenerate, highlighting the significant role of interlayer hybridization in offsetting the energy cost due to larger interlayer separations in the AB-r mode. Additionally, our DMC-benchmarked DFT calculations with the r 2 SCAN+rVV10 functional uncover pronounced stacking polymorphism in few-layer PtSe 2 , driven by degenerate AA and AB-r interfaces, which leads to substantial band gap variations across different stacking configurations. This polymorphism, along with selenium vacancies, influences a layer-dependent metal-insulator transition observed in few-layer PtSe 2 . Our findings emphasize the importance of both van der Waals interactions and interlayer hybridization in determining the phase stability and electronic properties of PtSe 2 , advancing our understanding of its fundamental properties and refining theoretical models for practical applications in nanoelectronic devices.

Electronic materials↗
NASA NTRS1995

Solid State Research

This report covers in detail the research work of the Solid State Division at Lincoln Laboratory for the period 1 May-31 July 1995. The topics covered are: Electrooptical Devices, Quantum Electronics, Materials Research, Submicrometer Technology, High Speed Electronics, Microelectronics, and analog device technology. Funding is provided primarily by the Air Force, with additional Support provided by the Army, ARPA, Navy, BMDO, NASA and NIST.

Shaver, David C.↗
NASA NTRS1996

Solid State Research

This report covers in detail the research work of the Solid State Division at Lincoln Laboratory for the period 1 May - 31 July 1996. The topics covered are Electrooptical Devices, Quantum Electronics, Materials Research, Submicrometer Technology, High Speed Electronics, Microelectronics, and Analog Device Technology. Funding is provided primarily by the Air Force, with additional Support provided by the Army, DARPA, Navy, BMDO, NASA, and NIST.

SOLID STATE PHYSICS↗
NASA NTRS2002

Nanotube Heterojunctions and Endo-Fullerenes for Nanoelectronics

Topics discussed include: (1) Light-Weight Multi-Functional Materials: Nanomechanics; Nanotubes and Composites; Thermal/Chemical/Electrical Characterization; (2) Biomimetic/Revolutionary Concepts: Evolutionary Computing and Sensing; Self-Heating Materials; (3) Central Computing System: Molecular Electronics; Materials for Quantum Bits; and (4) Molecular Machines.

Srivastava, Deepak↗
DOE OSTI2024

Random Forest Prediction of Crystal Structure from Electron Diffraction Patterns

Transmission electron microscopy (TEM) diffraction patterns are regularly used to determine the structure of crystalline materials. Electron diffraction is the most common method to solve for unknown or partially known crystal structures, as it provides direct and interpretable feedback on the orientation of crystal grains under the beam [1]. However, it remains a challenge to determine the crystal structure of a new material or even a new phase of an existing material. Analysis of such materials commonly requires manual exploration and comparison with simulated diffraction patterns. This is often a time consuming process with no obvious start point when many similar structures are possible, and this method cannot be used to determine crystal structure or orientation from structures not included in the diffraction libraries. Therefore, we have developed a machine learning model to determine the crystal structure of a material from its electron diffraction pattern.

36 MATERIALS SCIENCE↗
DOE OSTI2022

2D material-based layer transfer: Challenges and opportunities

For future of electronics such as bioelectronics, 3D integrated electronics, and bendable electronics, needs for flexibility and stackability of electronic products have substantially grown up. However, conventional wafer-based single-crystalline semiconductors cannot catch up with such trends because they are bound to the thick rigid wafers such that they are neither flexible nor stackable. Although polymer-based organic electronic materials are more compatible as they are mechanically complaint and less costly than inorganic counterparts, their electronic/photonic performance is substantially inferior to that of single-crystalline inorganic materials. For the past few decades, many different strategies to mitigate such performance-mechanical compliance dilemma by developing methods to obtain cheap, flexible, stackable, single-crystalline inorganic systems. In today’s talk, I will discuss about various strategies to realize such a dream electronic system and how these strategies unlock new ways of manufacturing advanced electronic systems. One of the most promising approaches is to fabricate freestanding ultrathin membranes from existing functional material wafers by peeling the active layers from the top. I will overview all freestanding membrane methods and especially dive deeply into 2D materials-based layer transfer (2DLT) technique that has been recently emerging as one of the very promising options. In the 2DLT process, one can produce single-crystalline freestanding membranes from 3D materials by performing remote epitaxy or van der Waals epitaxy on 2D materials followed by peeling active single-crystalline films from the 2D materials. I will discuss about the challenges and opportunities of this technology. In addition, I will present unprecedented artificial heterostructures that can be enabled by stacking those freestanding 3D material membranes.

Kim, Jeehwan↗
DOE OSTI2022

Two-dimensional material based layer transfer: challenges and opportunities

For future of electronics such as bioelectronics, 3D integrated electronics, and bendable electronics, needs for flexibility and stackability of electronic products have substantially grown up. However, conventional wafer-based single-crystalline semiconductors cannot catch up with such trends because they are bound to the thick rigid wafers such that they are neither flexible nor stackable. Although polymer-based organic electronic materials are more compatible as they are mechanically complaint and less costly than inorganic counterparts, their electronic/photonic performance is substantially inferior to that of single-crystalline inorganic materials. For the past few decades, many different strategies to mitigate such performance-mechanical compliance dilemma by developing methods to obtain cheap, flexible, stackable, single-crystalline inorganic systems. In today’s talk, I will discuss about various strategies to realize such a dream electronic system and how these strategies unlock new ways of manufacturing advanced electronic systems. One of the most promising approaches is to fabricate freestanding ultrathin membranes from existing functional material wafers by peeling the active layers from the top. I will overview all freestanding membrane methods and especially dive deeply into 2D materials-based layer transfer (2DLT) technique that has been recently emerging as one of the very promising options. In the 2DLT process, one can produce single-crystalline freestanding membranes from 3D materials by performing remote epitaxy or van der Waals epitaxy on 2D materials followed by peeling active single-crystalline films from the 2D materials. I will discuss about the challenges and opportunities of this technology. In addition, I will present unprecedented artificial heterostructures that can be enabled by stacking those freestanding 3D material membranes.

KIM, JEEHWAN↗
DOE OSTI2022

High thermal conductivity in wafer-scale cubic silicon carbide crystals

High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m –1 K –1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.

42 ENGINEERING↗
NASA NTRS2001

Synthesis and Characterization of SF-PPV-I

Conjugated electro-active polymers find their potential applications in developing variety inexpensive and flexible shaped electronic and photonic devices, such as photovoltaic or photo/electro light emitting devices. In many of these opto-electronic polymeric materials, certain electron rich donors and electron deficient acceptors are needed in order to fine-tune the electronic or photonic properties of the desired materials and structures. While many donor type of conjugated polymers have been widely studied and developed in the past decades, there are relatively fewer acceptor type of conjugated polymers have been developed. Key acceptor type conjugated polymers developed so far include C60 and CN-PPV, and each has its limitations. Due to the complexity and diversity of variety future electronic materials and structural needs, alternative and synthetically amenable acceptor conjugated polymers need to be developed. In this paper, we present the synthesis and characterization of a new acceptor conjugated polymer, a sulfone derivatized polyphenylenevinylene "SF-PPV".

Wang, Y.↗
NASA NTRS1978

Sensors and detectors in NASA's future missions

Advances in electronics are responsible for major improvements in NASA's sensing and detection capabilities for future space missions. Technologies such as charge-transfer devices, tunable diode lasers, millimeter and submillimeter wave solid-state receiver components, large-scale circuit integration, new electronic materials and processing techniques, and novel detector electronics are contributing to the goal of a tenfold increase in the capacity of data collection from future platforms and will be used for space exploration and utilization.

Rubin, B.↗
NASA NTRS1994

Ilmenite as Dual-Use Material

This paper addresses the subject of dual-use space technology transfer of a novel, non-traditional material termed ilmenite, found in a large percentage in the moon rocks brought back by NASA's APOLLO missions. The paper is somewhat premature in the sense that though the material as a mineral has been known for a long time, very little is known about pure single crystal ilmenite and hence few applications have been demonstrated. Yet, in another sense, it is very timely due to the fact that ilmenite promises to be a very interesting competition to silicon, silicon carbide and other compound semiconductors, especially those that are employed in high power, high temperature and large data storage/retrieval applications. It seems to be an excellent example of a small investment-high return situation. While some of the applications of this material - for production of oxygen, for instance - have been well-known, electronic applications have received relatively little attention. One reason for this was the fact that growth of single crystal ilmenite requires precise process conditions and parameters. We believe for the first time these have been determined in the Center for Electronic Materials, Texas A&M University. The work being done at Texas A&M University and Prairie View A&M University (supported by Battelle Pacific Northwest Laboratories and the Center for Space Power) indicates the excellent potential this material has in space as well as in terrestrial applications. To mention a few: as a wide band gap semiconductor it has applications in high temperature, high power situations, especially when heat dissipation is a problem such as may occur in the Space Station; the possibility of this material radiating in the blue region, it has immense applications in optoelectronics; as a material with a high density of highly directional d-bands, it lends itself to novel processing conditions and perhaps even to 'tunability' of physical parameters; as a potential scintillating material, it has possible applications as a sensor in waste management; as an oxygen sensor it has possible applications in automotive electronics; and as a radiation resistant material, it has obvious applications in the space environment. Results - experimental and theoretical - obtained so far in our laboratories will be reported with particular emphasis on the transfer of technology involving this fascinating material.

Kumar, A. A.↗