Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “electron irradiation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Temperature, illumination, and fluence dependence of current and voltage in electron irradiated solar cells

Empirical equations have been derived from measurements of solar cell photovoltaic characteristics relating light-generated current and open circuit voltage to cell temperature, intensity of illumination and 1-MeV electron fluence. Both 2-ohm-cm and 10-ohm-cm cells were tested over the temperature range from 120 to 470 K, the illumination intensity range from 5 to 1830 mW/sq cm, and the electron fluence range from 1 x 10 to the 13th to 1 x 10 to the 16th electrons/sq cm. The normalized temperature coefficient of the light generated current varies as the 0.18 power of the fluence for temperatures above approximately 273 K and is independent of fluence at lower temperatures. At 140 mW/sq cm, a power law expression was derived which shows that the light-generated current decreases at a rate proportional to the 0.153 power of the fluence for both resistivities. The coefficient of the expression is larger for 2-ohm-cm cells; consequently, the advantage for 10-ohm-cm cells increased with increasing fluence.

Faith, T. J.↗
NASA NTRS1973

Temperature, illumination and fluence dependence of current and voltage in electron irradiated solar cells

Emperical equations have been derived from measurements of solar cell photovoltaic characteristics relating light generated current, IL, and open circuit voltage, VO, to cell temperature, T, intensity of illumination, W, and 1 Mev electron fluence, phi both 2 ohm-cm and 10 ohm-cm cells were tested. The temperature dependency of IL is similar for both resistivities at 140mw/sq cm; at high temperature the coefficient varies with fluence as phi 0.18, while at low temperatures the coefficient is relatively independent of fluence. Fluence dependent degration causes a decrease in IL at a rate proportional to phi 0.153 for both resistivities. At all intensities other than 560 mw/sq cm, a linear dependence of IL on illumination was found. The temperature coefficient of voltage was, to a good approximation, independent of both temperature and illumination for both resistivities. Illumination dependence of VOC was logarithmic, while the decrease with fluence of VOC varied as phi 0.25 for both resistivities.

Obenschain, A. F.↗
NASA NTRS1993

X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I

X-ray-diffraction tests performed on aluminum conductors in commercial HI1-507A complementary metal oxide/semiconductor (CMOS) integrated-circuit analog multiplexers, both before and after circuits exposed to ionizing radiation from Co(60) source, and after postirradiation annealing at ambient and elevated temperatures. Tests in addition to electrical tests performed to determine effects of irradiation and of postirradiation annealing on electrical operating characteristics of circuits. Investigators sought to determine whether relationship between effects of irradiation on devices and physical stresses within devices. X-ray diffraction potentially useful for nondestructive measurement of stresses.

Shaw, David C.↗
NASA NTRS1988

Effects of electron irradiation on high temperature superconductors and contacts to high temperature superconductors

The discovery of a new class of ceramic superconductors with transition temperatures above liquid nitrogen has opened the doors for exciting space applications. Energy storage, pointing maneuvers, magnetic shielding, and sensitive detection of electromagnetic radiation are some of the longer term possible applications. One near term application involves low electrical resistance, high thermal resistance connections between a detector operating at approximatly or equal to 4 and the electronics operating at approximatly or equal to 77 K. The new high temperature superconductors could accomplish this providing the necessary electrical connections to the ground plane while isolating the system thermally, thus prolonging the life of the mission. With such possibilities it is clearly of value to study the effects of radiation that would be experienced during a typical space mission. In this work we focused specifically on the effects of the electron radiation environment.

Caton, Randall↗
NASA NTRS1981

Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation

High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.

Weinberg, I.↗
NASA NTRS2005

Preliminary low temperature electron irradiation of triple junction solar cells

JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature.

annealing↗
DOE OSTI2021

Design of a 10 MeV beamline at the Upgraded Injector Test Facility for e-beam irradiation

Electron beam irradiation near 10 MeV is suitable for wastewater treatment. The Upgraded Injector Test Facility (UITF) at Jefferson Lab is a CW superconducting linear accelerator capable of providing an electron beam of energy up to 10 MeV and up to 100 µA current. This contribution presents the beam transport simulations for a beamline to be used for the irradiation of wastewater samples at the UITF. The simulations were done using the code General Particle Tracer with the goal of obtaining an 8 MeV electron beam of radius (3-σ) of ~2.4 cm. The achieved energy spread is ~74.5 keV. The space charge effects were investigated when the bunch charge is varied to be up to 1000 times and the results showed that they do not affect the beam quality significantly.

Li, X.↗
DOE OSTI2021

Design of a 10 MeV beamline at the Upgraded Injector Test Facility for e-beam irradiation

Electron beam irradiation near 10 MeV is suitable for wastewater treatment. The Upgraded Injector Test Facility (UITF) at Jefferson Lab is a CW superconducting linear accelerator capable of providing an electron beam of energy up to 10 MeV and up to 100 µA current. This contribution presents the beam transport simulations for a beamline to be used for the irradiation of wastewater samples at the UITF. The simulations were done using the code General Particle Tracer with the goal of obtaining an 8 MeV electron beam of radius (3-σ) of ~2.4 cm. The achieved energy spread is ~74.5 keV. The space charge effects were investigated when the bunch charge is varied to be up to 1000 times and the results showed that they do not affect the beam quality significantly.

Li, X.↗
NASA NTRS2002

Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

Lord, Kenneth↗
NASA NTRS2013

Effect of Electron Beam Irradiation on the Tensile Properties of Carbon Nanotubes Sheets and Yarns

Carbon nanotube sheets and yarns were irradiated using electron beam (e-beam) energy to determine the effect of irradiation dose on the tensile properties. Results showed that a slight change in tensile strength occurred after irradiating as-received CNT sheets for 20 minutes, and a slight decrease in tensile strength as the irradiation time approached 90 minutes. On the other hand, the addition of small molecules to the CNT sheet surface had a greater effect on the tensile properties of e-beam irradiated CNT sheets. Some functionalized CNT sheets displayed up to a 57% increase in tensile strength following 90 minutes of e-beam exposure. In addition, as-received CNT yarns showed a significant increase in tensile strength as the irradiation time increased.

Williams, Tiffany S.↗