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At least 127 records · Page 7

Grain Boundary Effects on Radiation Damage and Tritium Diffusion in Li–Al–O Ceramics from Molecular Dynamics and Experiments

Understanding irradiation damage and tritium transport in LiAlO2 ceramics is essential for their deployment in tritium-producing burnable absorber rods (TPBARs). Grain boundaries (GBs) play an important role in governing radiation response and tritium transport in LiAlO2 and its secondary phase LiAl5O8. Using molecular dynamics simulations, we investigated defect evolution and tritium diffusion during displacement cascades in single-crystal and bicrystal LiAlO2 and LiAl5O8 at 600 K. The results reveal that GBs suppress the damage in the LiAlO2 bicrystals as compared to single crystals, via interstitial emission. The effect is more pronounced for Li defects, than for Al and O. In LiAl5O8 the damage reduction due to introduction of GB is less pronounced overall. Tritium diffusion coefficients at GBs are higher by factors of 2–10 relative to diffusion inside grain bulk. The effect is particularly pronounced in LiAlO2, where S5, S17, and S25 GBs promote rapid tritium transport, whereas LiAl5O8 exhibits slower diffusion due to reduced free volume at its GBs. These findings evince a trade-off that while GBs mitigate radiation damage by absorbing interstitials, they simultaneously provide fast pathways for tritium migration which is not desirable for TPBAR application. The mechanistic insights gained here establish a foundation for microstructural design strategies to balance radiation tolerance and tritium retention in ceramic breeder materials.

Roy, Ankit↗

Solar Array Verification Analysis Tool (SAVANT) Developed

Modeling solar cell performance for a specific radiation environment to obtain the end-of-life photovoltaic array performance has become both increasingly important and, with the rapid advent of new types of cell technology, more difficult. For large constellations of satellites, a few percent difference in the lifetime prediction can have an enormous economic impact. The tool described here automates the assessment of solar array on-orbit end-of-life performance and assists in the development and design of ground test protocols for different solar cell designs. Once established, these protocols can be used to calculate on-orbit end-of-life performance from ground test results. The Solar Array Verification Analysis Tool (SAVANT) utilizes the radiation environment from the Environment Work Bench (EWB) model developed by the NASA Lewis Research Center s Photovoltaic and Space Environmental Effects Branch in conjunction with Maxwell Technologies. It then modifies and combines this information with the displacement damage model proposed by Summers et al. (ref. 1) of the Naval Research Laboratory to determine solar cell performance during the course of a given mission. The resulting predictions can then be compared with flight data. The Environment WorkBench (ref. 2) uses the NASA AE8 (electron) and AP8 (proton) models of the radiation belts to calculate the trapped radiation flux. These fluxes are integrated over the defined spacecraft orbit for the duration of the mission to obtain the total omnidirectional fluence spectra. Components such as the solar cell coverglass, adhesive, and antireflective coatings can slow and attenuate the particle fluence reaching the solar cell. In SAVANT, a continuous slowing down approximation is used to model this effect.

Bailey, Sheila G.↗

Molecular dynamics simulations of radiation cascade evolution near cellular dislocation structures in additively manufactured stainless steels

The dislocation dense cellular structures observed in additively manufactured (AM) stainless steels can allow these materials to have enhanced strength and ductility compared to conventionally manufactured materials. Effective design of radiation resistant materials often necessitates creating microstructures containing of a high density of dislocations that act as sinks for radiation induced defects. This work uses molecular dynamics simulations to study the impact of pre-existing defects on radiation damage in stainless steel 316L fabricated by the laser powder bed fusion process. The evolution of synthetically generated dislocations in a crystal system in response to multiple radiation collision cascades suggest that dislocation dense regions reduce the probability of surviving point defects forming clusters. This finding seems to result from the dislocation cores’ ability to absorb point defects, thereby limiting the formation of clusters during the recombination phase. However, after successive cascades, the ability of the dislocation entanglement to prevent defect formation is diminished and defect cluster formation trends to an equilibrium. Accordingly, it is hypothesized that in an experimental setting the dislocation cells will initially act as neutral sinks for point defects, potentially delaying the onset of radiation damage effects; but, these structures will be degraded due to radiation-enhanced diffusion and lose their effectiveness at doses above 1.5–2 displacements per atom. Nevertheless, the ability to produce complex and feature-specific microstructures suggests promise for the design of radiation tolerant materials using AM methods.

36 MATERIALS SCIENCE↗

Enhanced backscatter and unsaturated blue wavelength shifts in F-doped fused silica optical fibers exposed to extreme neutron radiation damage

Amorphous fused silica (a-SiO 2 ) optical fibers, with and without inscribed Bragg gratings, were interrogated using infrared (~1550 nm) optical backscatter reflectometry during ~25 days of intense neutron irradiation to a fast (energy > 0.1 MeV) neutron fluence of ~10 21 n/cm 2 , or ~1.5 atomic displacements per atom. The reflected light amplitudes in Ge-doped core telecommunications fiber dropped below detection limits (>15 dB attenuation) within 3 days of irradiation (~10 20 fast n/cm 2 ). Here, amplitudes from a pure silica core, F-doped silica cladding fiber reached equilibrium levels ~1.5–2 dB higher than pre-irradiation values, whereas Bragg gratings inscribed in the same fiber using a femtosecond laser (point-by-point method) suffered > 45 dB attenuation. Blue wavelength shifts were initially consistent with previous radiation-induced compaction models but increased linearly with increasing neutron fluence (no evidence of saturation) beyond 10 20 n/cm 2 and exceeded 0.6%, which corresponds to >1,000 °C drift if used to measure temperature changes.

36 MATERIALS SCIENCE↗

The In Situ Ion Irradiation Toolbox: Time-Resolved Structure and Property Measurements

Abstract The dynamic interactions of ions with matter drive a host of complex evolution mechanisms, requiring monitoring on short spatial and temporal scales to gain a full picture of a material response. Understanding the evolution of materials under ion irradiation and displacement damage is vital for many fields, including semiconductor processing, nuclear reactors, and space systems. Despite materials in service having a dynamic response to radiation damage, typical characterization is performed post-irradiation, washing out all information from transient processes. Characterizing active processes in situ during irradiation allows the mechanisms at play during the dynamic ion-material interaction process to be deciphered. In this review, we examine the in situ characterization techniques utilized for examining material structure, composition, and property evolution under ion irradiation. Covering analyses of microstructure, surface composition, and material properties, this work offers a perspective on the recent advances in methods for in situ monitoring of materials under ion irradiation, including a future outlook examining the role of complementary and combined characterization techniques in understanding dynamic materials evolution.

36 MATERIALS SCIENCE↗

Initial Feasibility Assessment and Broader Strategy Development for Fiber Integration via Advanced Manufacturing

Structural health monitoring is critical for ensuring the operational safety and cost-competitiveness of the developing advanced reactor designs. The extreme operational envelopes of these advanced architectures, having operating temperatures ranging 400°C–1,000°C and heightened displacement damage doses, render conventional commercially available piezoelectric transducers and resistive strain gauges unviable. Optical fiber sensors present an attractive solution for advanced radiation-hardened instrumentation due to their high thermal stability and distributed sensing capabilities. However, their deployment in embedded applications can be hindered by the severe thermomechanical strain driven by the coefficient of thermal expansion mismatch between fused silica glass and structural metal alloys like stainless steel (e.g., SS316L).

36 MATERIALS SCIENCE↗

Radiation damage study of POCO ZXF-5Q graphite for neutrino production targets using 4.5 MeV helium ions

To address the challenges of increased beam power and target survivability associated with next-generation particle production beam lines, high dose, high-energy proton beam conditions are simulated using irradiation from low-energy ion beams. A low-energy ion irradiation study of POCO ZXF-5Q graphite under conditions similar to those of the NuMI NT-02 neutrino production target at the Fermi National Accelerator Laboratory is reported. Helium ion irradiation was performed at 100 ∘ C to a maximum damage level of 0.9 displacements per atom (DPA). Irradiation induced hardening, swelling of the irradiated region, inter-plane lattice expansion, and intraplane lattice contraction with increasing ion fluence was observed using micromechanical (nanoindentation, atomic force microscopy) and electron microscopy (high-resolution imaging, selected area diffraction) characterization. Similar changes were also observed in post irradiation examination of the NT-02 target indicating that ion irradiation can be a valuable tool for estimating radiation damage in proton beam targets. Caution must be exercised though, because the hardening, lattice alteration, and swelling occur to different magnitudes for a given damage level. The observed hardening and embrittlement were greater for ion irradiated graphite. For He ion irradiated samples the lattice spacing changes were smaller at low damage levels (78% less expansion and 71% less contraction at 0.1 DPA) and larger at high damage levels (38% more expansion and 5% more contraction at 0.9 DPA) relative to that observed in the NT-02 target. The magnitude of swelling was 8.5× greater under ion irradiation which is influenced by the differing damage gradients and inclusion of implanted He ions in the region of interest.

43 PARTICLE ACCELERATORS↗

Molecular dynamics investigation of radiation damage in semiconductors

Results of a molecular dynamics investigation of the effects of radiation damage on the crystallographic structure of semiconductors are reported. Particular cosiderastion is given to the formation of point defects and small defect complexes in silicon at the end of a radiation-damage cascade. The calculations described make use of the equivalent crystal theory of Smith and Banerjea (1988). Results on the existence of an atomic displacement threshold, the defect formation energy, and some crystallographic information on the defects observed are reported.

Good, Brian S.↗

Dependence of simulated radiation damage on crystal structure and atomic misfit in metals

This study investigates the evolution of radiation damage in three metals in the low temperature and high radiant flux regime using molecular statics and a Frenkel pair accumulation method to simulate up to 2.0 displacements per atom. The metals considered include Fe, equiatomic CrCoNi, and a fictitious metal with similar bulk properties to the CrCoNi composed of a single atom type referred to as an A-atom. CrCoNi is found to sustain higher concentrations of dislocations than either the Fe or A-atom systems and more stacking faults than the A-atom system. The results suggest that the difference between the concentrations of vacancies and interstitials is substantially smaller for CrCoNi than the A-atom system, perhaps reflecting that the sink capture radius is smaller in CrCoNi due to the roughened potential energy landscape. A model that partitions the major contributions from defects to the stored energy is described, and serves to highlight a general need for higher fidelity approaches to point defect identification.

36 MATERIALS SCIENCE↗

SiC vs. Si for High Radiation Environments: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Schottky barrier power diodes↗

Metal oxide impregnated conformal coatings for ionizing radiation shielding

Conformal coatings provide environmental protection for sensitive military electronics. Preliminary MCNP™ modeling of metal oxide impregnated acrylic conformal coatings indicates an effective shield for gammas below 10 keV and a reduction in neutron displacement damage to Si-based electronics across the Watt spectrum. This work provides data which can allow an optimal overall shielding worth per total weight to eventually be evaluated.

Hayes, Robert Bruce↗

Correlation of displacement effects produced by electrons, protons and neutrons in silicon

The correlation of displacement effects produced by electrons, protons, and neutrons in silicon is studied. Available data from the literature is employed. In particular the scope of the study is limited to the degradation of excess carrier lifetime and device electrical parameters directly related to it. The degree to which displacement effects may be correlated in order to predict semiconductor device response based on response data to another type of radiation is discussed. Useful ranges of the correlation factors (lifetime damage constant ratios) as a function of device majority carrier type, device resistivity, and injection level are presented. A significant dependence on injection level for the correlation factors is found.

Van Lint, V. A. J.↗

Countdown to perovskite space launch: Guidelines to performing relevant radiation-hardness experiments

Perovskite photovoltaics (PVs) are under intensive development for promise in terrestrial energy production. Soon, the community will find out how much of that promise may become reality. Perovskites also open new opportunities for lower cost space power. However, radiation tolerance of space environments requires appropriate analysis of relevant devices irradiated under representative radiation conditions. We present guidelines designed to rigorously test the radiation tolerance of perovskite PVs. We review radiation conditions in common orbits, calculate nonionizing and ionizing energy losses (NIEL and IEL) for perovskites, and prioritize proton radiation for effective nuclear interactions. Low-energy protons (0.05-0.15 MeV) create a representative uniform damage profile, whereas higher energy protons (commonly used in ground-based evaluation) require significantly higher fluence to accumulate the equivalent displacement damage dose due to lower scattering probability. Furthermore, high-energy protons may "heal" devices through increased electronic ionization. These procedural guidelines differ from those used to test conventional semiconductors.

14 SOLAR ENERGY↗

Quantifying Low Energy Proton Damage in Multijunction Solar Cells

An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP2/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code (SRIM) is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modelling results show that, in the space environment, the solar cell will experience a uniform damage distribution through the active region of the cell. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated.

Messenger, Scott R.↗

Diffusion-mediated chemical concentration variation and void evolution in ion-irradiated NiCoFeCr high-entropy alloy

High-entropy alloys (HEAs) are proposed as potential structural materials for advanced nuclear systems, but little is known about the response of matrix chemistry in HEAs upon irradiation. Here, we reveal a substantial change of matrix chemical concentration as a function of irradiation damage (depth) in equiatomic NiCoFeCr HEA irradiated by 3 MeV Ni ions. After ion irradiation, the matrix contains more Fe/Cr in depth shallower than ~900–1000 nm but more Ni/Co from ~900–1000 nm to the end of the ion-damaged region due to the preferential diffusion of vacancies through Fe/Cr. Preferential diffusion also facilitates migration of vacancies from high radiation damage region to low radiation damage region, leading to no void formation below ~900–1000 nm and void formation around the end of the ion-damaged region at a fluence of 5 × 10 16 cm -2 (~123 dpa, displacements per atom, peak dose under full cascade mode). As voids grow significantly at an increased fluence (8 × 10 16 cm -2 , 196 dpa), the matrix concentration does not change dramatically due to new voids formed below ~900–1000 nm.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Diffusion-mediated chemical concentration variation and void evolution in ion-irradiated NiCoFeCr high-entropy alloy

High-entropy alloys (HEAs) are proposed as potential structural materials for advanced nuclear systems, but little is known about the response of matrix chemistry in HEAs upon irradiation. Here, we reveal a substantial change of matrix chemical concentration as a function of irradiation damage (depth) in equiatomic NiCoFeCr HEA irradiated by 3 MeV Ni ions. After ion irradiation, the matrix contains more Fe/Cr in depth shallower than ~900–1000 nm but more Ni/Co from ~900–1000 nm to the end of the ion-damaged region due to the preferential diffusion of vacancies through Fe/Cr. Preferential diffusion also facilitates migration of vacancies from high radiation damage region to low radiation damage region, leading to no void formation below ~900–1000 nm and void formation around the end of the ion-damaged region at a fluence of 5 × 10 16 cm –2 (~123 dpa, displacements per atom, peak dose under full cascade mode). As voids grow significantly at an increased fluence (8 × 10 16 cm –2 , 196 dpa), the matrix concentration does not change dramatically due to new voids formed below ~900–1000 nm.

36 MATERIALS SCIENCE↗