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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Structural and optical properties of cubic GaN on U-grooved Si (100)

Cubic GaN epitaxy on large-area U-grooved silicon (100) dies is demonstrated by metalorganic chemical vapor deposition, and its structural and optical properties are reported. Scanning electron, atomic force, and transmission electron microscopy studies reveal that cubic GaN shows no discernible threading dislocations and a low stacking fault density of 3.27 ± 0.18 × 10 4 cm –1 . Temperature-dependent photoluminescence studies reveal as-grown cubic GaN band edge emission internal quantum efficiency as 25.6% ± 0.9%. Selective etching of the low-temperature AlN buffer layer, SiO 2 sidewalls, and hexagonal-phase GaN is demonstrated, which increases the cubic GaN band edge emission internal quantum efficiency to 31.6% ± 0.8%. This increase is attributed to the decrease in the radiative recombination lifetime via the removal of defective hexagonal-phase GaN. Altogether, cubic GaN on U-grooved silicon with high structural and optical quality is reported, promising its suitability for next-generation devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. Here, this work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ~10 7 /cm 2 after ~3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Quantitative insights into the dislocation source behavior of twin boundaries suggest a new dislocation source mechanism

Pop-in statistics from nanoindentation with spherical indenters are used to determine the stress required to activate dislocation sources in twin boundaries (TBs) in copper and its alloys. The TB source activation stress is smaller than that needed for bulk single crystals, irrespective of the indenter size, dislocation density and stacking fault energy. Because an array of pre-existing Frank partial dislocations is present at a TB, we propose that dislocation emission from the TB occurs by the Frank partials splitting into Shockley partials moving along the TB plane and perfect lattice dislocations, both of which are mobile. The proposed mechanism is supported by recent high resolution transmission electron microscopy images in deformed nanotwinned (NT) metals and may help to explain some of the superior properties of nanotwinned metals (e.g. high strength and good ductility), as well as the process of detwinning by the collective formation and motion of Shockley partial dislocations along TBs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Irradiation-induced segregation at dislocation loops in CoCrFeMnNi high entropy alloy

To understand the redistribution of alloying elements in high entropy alloys under irradiation, we irradiated a CoCrFeMnNi alloy with 1 MeV Kr ions at room temperature and at 500°C, and characterized with atom probe tomography and transmission electron microscopy. At 500°C, Co and Ni were enriched around the interstitial, faulted and perfect, dislocation loops resulted from the ion irradiation. In contrast, no segregation was observed at room temperature. The inverse Kirkendall effect through vacancy flux, as opposed to the interstitial binding mechanism, was the primary underlying process attributing to the observed segregation. In addition, a ring-shaped segregation pattern was observed at the faulted dislocation loops, indicating a non-equilibrium nature of the defect clustering and solute segregation process in CoCrFeMnNi under irradiation at high temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Origin of dislocation structures in an additively manufactured austenitic stainless steel 316L

In this experiment, the origin of dislocation structures in AM stainless steels was systematically investigated by controlling the effect of thermal stress through geometric constraints for the first time. Stainless steel 316L parts were produced in the form of “1D” rods, “2D” walls, and "3D" rectangular prisms to evaluate the effect of constraints to thermal expansion/shrinkage on the development of defect microstructures and to elucidate the origin of additively manufactured (AM) dislocation microstructures. Dislocation density, organization, chemical micro-segregation, precipitate structures, and misorientations were analyzed as a function of increasing constraints around solidifying material in 1D, 2D, and 3D components built using both directed energy deposition (DED) and powder-bed selective laser melting (SLM). In DED parts, the dislocation density was not dependent on local misorientations or micro-segregation patterns, but evolved from approximately ρ ⊥ = 10 12 m -2 in 1D parts to ρ ⊥ = 10 14 m -2 in 3D parts, indicating that it is primarily thermal distortions that produce AM dislocation structures. In DED 3D parts and SLM parts, dislocation densities were highest (ρ ⊥ ≈ 10 14 m -2 ) and corresponded to the formation of dislocation cells approximately 300-450 nm in diameter. Dislocation cells overlapped with dendrite micro-segregation in some but not all cases. The results illustrate that dendritic micro-segregation, precipitates, or local misorientations influence how the dislocations organize during processing, but are not responsible for producing the organized cell structures. Furthermore, this work shows that AM dislocation structures originate due to thermal distortions during printing, which are primarily dictated by constraints surrounding the melt pool and thermal cycling.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Domain-Matching Epitaxy of Ferroelectric Hf 0.5 Zr 0.5 O 2 (111) on La 2/3 Sr 1/3 MnO 3 (001)

Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf 0.5 Zr 0.5 O 2 (111) films were epitaxially stabilized on La 2/3 Sr 1/3 MnO 3 (001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. In this work, to gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. Additionally, these observed periodicities agree with those expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf 0.5 Zr 0.5 O 2 (111)/La 2/3 Sr 1/3 MnO 3 (001)heterostructure.

36 MATERIALS SCIENCE↗
NASA NTRS1976

The influence of growth rate and temperature on high cycle fatigue of Al-Al3Ni

High-cycle fatigue tests have been conducted on specimens of an Al-Al3Ni eutectic alloy, unidirectionally solidified at selected rates from 0.000139 to 0.3 cm/sec. Tests were conducted in air at 298, 458 and 683 K. Room temperature fatigue lives were independent of growth rate at low solidification rates but were markedly improved in samples grown at 0.3 cm/sec. Materials grown at 0.00833 cm/sec exhibited fatigue lives similar to those of the lower growth rates, despite gross misalignment due to cellular growth. The dependence of fatigue life on growth rate at elevated temperatures appears to be due primarily to differences in cyclic creep rates as a result of varying interfiber spacings. Crack initiation and propagation mechanisms were established by metallographic and fractographic examination. Dislocation substructure-fiber interactions were studied by transmission electron microscopy.

Maurer, G. E.↗
NASA NTRS1982

The measurement of the stacking fault energy in copper, nickel and copper-nickel alloys

The relationship of hydrogen solubility and the hydrogen embrittlement of high strength, high performance face centered cubic alloys to the stacking fault energy of the alloys was investigated. The stacking fault energy is inversely related to the distance between the two partial dislocations which are formed by the dissociation of a perfect dislocation. The two partial dislocations define a stacking fault in the crystal which offers a region for hydrogen segregation. The distance between the partial dislocations is measured by weak beam, dark field transmission electron microscopy. The stacking fault energy is calculated. Pure copper, pure nickel and copper-nickel single crystals are used to determine the stacking fault energy.

Leighly, H. P., Jr.↗
DOE OSTI2021

Cepstral scanning transmission electron microscopy imaging of severe lattice distortions

The development of four-dimensional (4D) scanning transmission electron microscopy (STEM) using fast detectors has opened-up new avenues for addressing some of longstanding challenges in electron imaging. One of these challenges is how to image severely distorted crystal lattices, such as at a dislocation core. Here we develop a new 4D-STEM technique, called Cepstral STEM, for imaging disordered crystals using electron diffuse scattering. In contrast to analysis based on Bragg diffraction, which measures the average and periodic scattering potential, electron diffuse scattering can detect fluctuations caused by crystal disorder. Local fluctuations of diffuse scattering are captured by scanning electron nanodiffraction (SEND) using a coherent probe. The harmonic signals in electron diffuse scattering are detected through Cepstral analysis and used for imaging. By integrating Cepstral analysis with 4D-STEM, we demonstrate that information about the distortive part of electron scattering potential can be separated and imaged at nm spatial resolution. Here, we apply the technique to the analysis of a dislocation core in SiGe and lattice distortions in a high entropy alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

(S)TEM/EDS study of native precipitates and irradiation induced Nb-rich platelets in high-burnup M5®

We have investigated microstructure and microchemistry of precipitates and dislocation loops in high-burnup M5® using (scanning) transmission electron microscopy ((S)TEM) equipped with energy dispersive X-ray spectroscopy (EDS). Two (S)TEM lamellae were made by cryo-FIB from the same cladding sample. The Nb-rich native precipitates were found in the metal, in the suboxide and in the oxide. Upon diffraction analysis, most of the Nb-rich native precipitates in the metal matrix remain as β-Nb phase, while no β-Nb native precipitates were found in the oxide. Nearby the oxide and metal (O/M) interface, the native precipitates in the oxide were already oxidized into t-NbO2 phase. At further distance away from the O/M interface, the Nb-rich native precipitates were gradually oxidized and became amorphous. Besides the native precipitates, Nb-rich irradiation induced precipitates (IIPs) were found in the metal matrix. Using g = <0002> vector for imaging, the length of the IIPs was aligned with dislocation loops. However, no Nb segregation to the dislocation loops themselves was observed. For the first time, we report that IIPs indeed exist in the oxide but only within about 1.5 µm away from O/M interface. However, the oxidation state of the IIPs in the oxide is still unclear. The presence of both native precipitates and IIPs in the oxide may indicate the Nb concentration in the oxide solid solution remain low nearby the O/M interface, which may explain the reduced corrosion kinetics of in-pile M5®. On the other hand, no IIPs were observed in the oxide at further distance and this may indicate that they have eventually dissolved back into the oxide. A few mechanisms related to IIPs stability in the oxide are presented.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Coalescence of GaP on V-Groove Si

With an increase of control over crystalline defects, metallorganic vapor phase epitaxy (MOVPE)-grown III-V-on-Si multijunction solar cells have seen rapid increases in efficiency in recent years, pointing to a promising path to lower cost III-V solar cells. However, the cost of chemo-mechanical polishing the Si wafers to prepare them for epitaxy is high. The use of V-groove nanopatterns enables similar defect reduction to that achieved on planar wafers, but the nanopatterns can be fabricated with a low-cost process. While V-grooves offer advantages over planar Si, they add complexity to the growth process. In particular, coalescence can cause the formation of threading dislocations, and the highly-directional growth conditions required for coalescence are unusual for MOVPE. We have studied the coalescence of GaP films nucleated directly on V-groove Si by MOVPE. We observed that for optimized growth conditions (V/III=5,000 and T=800 C) two growth modes were possible, and the resulting morphology depended on the exact geometry of the SiNx cap used to cover the (0 0 1)-oriented Si at the tops of the grooves. For caps with a width >100 nm, noncoalescing, nano ridge-like growth terminating in f1 1 1g facets was observed. For narrower caps, coalescence with an RMS roughness of 0.2 nm as measured by atomic force microscopy was observed. We will discuss mechanisms responsible for this phenomenon, including the role of Si from the substrate surface. The dislocation dynamics of this system were studied with electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). We find that V-grooves do not block dislocation glide; ECCI measurements show misfit dislocations greater than 10 micrometers long observed to continue perpendicularly across neighboring V-grooves. In addition, all threading dislocations appear to lie on f1 1 1g planes, consistent with the GaP relaxing via glided-in glissile dislocations. The dislocation dynamics and morphological evolution of the coalescence of GaP on Si, possible mechanisms behind the observed phenomenons, and further dislocation mitigation strategies for these materials will be presented.

dislocation dynamics↗
DOE OSTI2025

Orientation-Dependent Nanomechanical Behavior of Pentaerythritol Tetranitrate as Probed by Multiple Nanoindentation Tip Geometries

Nanoindentation can be leveraged to aid in the high fidelity modeling of dislocation mediated plasticity in pentaerythritol tetranitrate (PETN), an anisotropic energetic molecular crystal. Moreover, nanoindentation tip parameters such as tip geometry, size, and degree of acuity can be utilized to target anisotropic behavior. In this work, nanoindentation was conducted across a range of orientations on the (110) face of PETN to characterize resultant yield behavior, mechanical property measurements, and resultant slip behavior and fracture initiation. Three different indentation tips were utilized: a 3-sided pyramidal Berkovich tip, a 4-sided high aspect ratio Knoop tip, and a 90° conical tip. Ultimately, indenter tip radius was documented to impact yield behavior, whereas tip geometry affected larger scale processes such as slip, and tip acuity was the dominating factor that led to fracture. The axisymmetric conical tip, serving as a baseline, showed the least amount of variation in mechanical property measurements but also the largest distribution of maximum shear stress at which initial yielding occurred. Its high degree of acuity, however, was more prone to induce fracture at higher loads. The Knoop tip was shown to be suitable for average measurements, but also for elucidation of certain anisotropic features. A distinctly higher perceived hardness at 45° was measured with the Knoop tip, indicating less dislocation motion in that direction also observed in this work via scanning probe microscopy. Lastly, the commonly used Berkovich tip was a good compromise whereby it provided a representative volume element describing the average behavior of the material. These results can be utilized to target desired anisotropic behavior in a wider range of molecular crystals, as well as to inform theoretical considerations for dislocation mediated plasticity in PETN.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Disorder-induced suppression of charge density wave order: STM study of Pd-intercalated ErTe 3

Pd-intercalated ErTe3 is studied as a model system to explore the effect of increasing disorder on an incommensurate two-component charge density wave (CDW). The ordering vectors of the CDW components lie along the two in-plane principal axes of the nearly tetragonal crystal structure. Using scanning tunneling microscopy (STM), we show that introducing Pd intercalants (i.e., disorder) induces CDW dislocations, which appear to be associated with each CDW component separately. Increasing Pd concentration has a stronger effect on the secondary CDW order, manifested in a higher density of dislocations, and thus increases the anisotropy (nematic character) of the CDW. Suggestive evidence of Bragg glass phases at weak disorder is also discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Activating dislocation mediated plasticity in boron carbide through Al-doping

Dislocation slip, deformation twinning, phase transformations, and fast fracture are energy dissipation mechanisms that accommodate mechanical loading in materials. The energetically unfavorable formation of dislocation attributes to the ease of cracking and the low damage tolerance observed in superhard ceramics, notably boron carbide. Here, this work demonstrates that room temperature dislocation slip can be enabled in boron carbide by altering its chemistry through Al doping. The activation of dislocation slip is mechanistically explained by quantum mechanics simulations and electron microscopy, which indicate that strain energy is released through basal icosahedral slip facilitated by icosahedral rotation and chain bond breaking and reconfiguring. The new insight gained through this work suggests that atomic doping could be an effective strategy to tune deformation mechanisms in boron carbide, which provides a significant potential for limiting amorphization and catastrophic failure, and opens a new strategy to enhance damage tolerance in brittle ceramics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Creep properties of advanced austenitic steel 709 determined through short experiments under in-situ neutron diffraction followed by TEM characterization

Here in this study, the creep mechanisms at play in Alloy 709 (Fe-20Cr-25Ni) are investigated by performing short-term creep-type tests under in-situ neutron diffraction experiments. Short tests are performed in the temperature range of 500 to 900 °C under constant load with a load ranging from 50 to 150 MPa. The creep exponent and activation energy are determined using the Bird-Mukherjee-Dorn relation and compared to that obtained from conventional longer creep tests from the literature. Scanning transmission electron microscopy (S/TEM) of the post-creep microstructure indicates that interaction of dislocations with precipitates are a dominant mechanism at play. Furthermore, local elemental mapping indicated chemical segregation at grain boundaries and formation of complex precipitates.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Enhancing fatigue life by ductile-transformable multicomponent B2 precipitates in a high-entropy alloy

Catastrophic accidents caused by fatigue failures often occur in engineering structures. Thus, a fundamental understanding of cyclic-deformation and fatigue-failure mechanisms is critical for the development of fatigue-resistant structural materials. Here we report a high-entropy alloy with enhanced fatigue life by ductile-transformable multicomponent B2 precipitates. Its cyclic-deformation mechanisms are revealed by real-time in-situ neutron diffraction, transmission-electron microscopy, crystal-plasticity modeling, and Monte-Carlo simulations. Multiple cyclic-deformation mechanisms, including dislocation slips, precipitation strengthening, deformation twinning, and reversible martensitic phase transformation, are observed in the studied high-entropy alloy. Its improved fatigue performance at low strain amplitudes, i.e., the high fatigue-crack-initiation resistance, is attributed to the high elasticity, plastic deformability, and martensitic transformation of the B2-strengthening phase. This study shows that fatigue-resistant alloys can be developed by incorporating strengthening ductile-transformable multicomponent intermetallic phases.

36 MATERIALS SCIENCE↗