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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Low Temperature Creep of Hot-Extruded Near-Stoichiometric NiTi Shape Memory Alloy: Effect of Thermal Cycling - Part 2

This paper is the first report on the effect prior low temperature creep on the thermal cycling behavior of NiTi. The isothermal low temperature creep behavior of near-stoichiometric NiTi between 300 and 473 K was discussed in Part I. The effect of temperature cycling on its creep behavior is reported in the present paper (Part II). Temperature cycling tests were conducted between either 300 or 373 K and 473 K under a constant applied stress of either 250 or 350 MPa with hold times lasting at each temperature varying between 300 and 700 h. Each specimen was pre-crept either at 300 or at 473 K for several months under an identical applied stress as that used in the subsequent thermal cycling tests. Irrespective of the initial pre-crept microstructures, the specimens exhibited a considerable increase in strain with each thermal cycle so that the total strain continued to build-up to 15 to 20 percent after only 5 cycles. Creep strains were immeasurably small during the hold periods. It is demonstrated that the strains in the austenite and martensite are linearly correlated. Interestingly, the differential irrecoverable strain, in the material measured in either phase decreases with increasing number of cycles, similar to the well-known Manson-Coffin relation in low cycle fatigue. Both phases are shown to undergo strain hardening due to the development of residual stresses. Plots of true creep rate against absolute temperature showed distinct peaks and valleys during the cool-down and heat-up portions of the thermal cycles, respectively. Transformation temperatures determined from the creep data revealed that the austenitic start and finish temperatures were more sensitive to the pre-crept martensitic phase than to the pre-crept austenitic phase. The results are discussed in terms of a phenomenological model, where it is suggested that thermal cycling between the austenitic and martensitic phase temperatures or vice versa results in the deformation of the austenite and a corresponding development of a back stress due to a significant increase in the dislocation density during thermal cycling.

Raj, S. V.↗
NASA NTRS2004

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

The off-axis approach to SiC epitaxial growth has not prevented many substrate crystal defects from propagating into SiC epilayers, and does not permit the realization of SiC heteropolytype devices. This paper reviews recent advancements in SiC epitaxial growth that begin to overcome the above shortcomings for arrays of device-sized mesas patterned into on-axis 4H/6HSiC wafers. These on-axis mesa growth techniques have produced 4H/6H-SiC homoepilayers and 3C-SiC heteroepilayers with substantially lower dislocation densities. The results should enable improved homojunction and heterojunction silicon carbide prototype devices.

Neudeck, P. G.↗
NASA NTRS2018

Characterization of Titanium Alloys Produced by Electron Beam Directed Energy Deposition

Functionally graded materials offer the potential to improve structural efficiency by allowing the material composition and/or microstructural features to spatially vary within a component. Additive manufacturing techniques enable the fabrication of such graded materials and structures. While examining several titanium alloys, this paper focuses on Ti-8Al-1Er as it has a unique microstructure that is only feasible when produced by rapid solidification methods like electron beam directed energy deposition, an additive manufacturing process. The results show that, when mixed, Ti-8Al-1Er and commercially-pure titanium uniformly mix at various ratios and the resultant static tensile properties of the mixed alloys behave according to rule-of-mixtures. At discontinuous interfaces between Ti-8Al-1Er and commercially-pure titanium, the crack growth behavior progresses smoothly across the discontinuity as the crack transitions from one crack growth regime into another. Studies on monolithic samples shows the mechanisms of damage in the Ti-8Al-1Er; specifically, that strain localization occurs near grain boundaries of high mis-orientation on the microscale and that twinning and dislocation density is concentrated near erbia-strengthening particles (Er2O3) on the nanoscale.

Newman, John A.↗
NASA NTRS2019

The Effect of Redox Conditions on Seismic Waves in Iron-Bearing Olivine: Implications for Understanding Planetary Interiros Through Seismilogy

Seismic data, inclusive of velocities and attenuation, can be utilized to elucidate the physical state of planetary interiors]. However, numerous micromechanical factors have been either experimentally demonstrated, or theoretically considered, to affect the propagation and dissipation of seismic energy within crystalline solids - including, but not limited to, changes in grain size, temperature, melt fraction, pressure and dislocation density. Thus, observed variations in seismic wave speeds and attenuation may be used to ultimately ‘map’ variations in physical properties, such as those listed above, within planetary bodies. But, in order to complete a successful inversion of seismic data into representations of physical properties, a first requirement is to obtain a fundamental laboratory based understanding of how each of these possible factors individually influences seismic waves. Here we conduct an experimental study with the initial objective to further understand one of the most commonly invoked, yet least studied, mechanisms that could alter intrinsic seismic wave attenuation: water content (occurring as chemically-bound hydroxyl). The historical basis for determining the effect of water on seismic properties was established predominantly through analogy with large-strain creep experiments conducted on olivine under water-saturated conditions. While these deformation experiments routinely demonstrate a weakening of olivine in the presence of water, they represent a fundamentally different deformation regime in comparison to the microstrains experienced due to a passing seismic wave. Thus, in order to directly assess the effects of water on seismic properties, small-strain experiments are required. Substantially modified seismic properties in the presence of water have been observed previously at low strains and low frequencies, but only in a single exploratory study conducted under water-saturated conditions. Thus, to properly test the theoretical predictions we conducted a systematic study of the seismic properties of olivine using low-frequency torsional oscillation on aggregates containing varying concentrations of bound hydroxyl, for the first time at under saturated conditions.

Cline, C. J., II↗
NASA NTRS2019

Vapor Growth of Indium Monoiodide

Indium (I) iodide, InI, is part of a group of heavy metal iodides that can be used as room temperature radiation detectors. Other examples are HgI2, PbI2, BiI3, or TlPbI3. InI has several advantages, such as low toxicity, no solid phase transition (such as in HgI2), and no tendency to form polytypes (PbI2, BiI3 ). All binary iodides have layered structures and are quite soft, but InI is also the mechanically most stable compound of the binary compounds. Table 1 shows the main properties of InI in comparison with the other iodides and the most common room temperature radiation detector material, (Cd, Zn)Te. InI is typically grown by the unseeded Bridgman method using a nucleation tip, but Czochralski (CZ) growth has also been demonstrated. The resulting crystals have been used successfully for radiation detection, but both resistivity and mobility are usually well below theoretically predicted values. Physical vapor transport (PVT), although much slower than melt growth, is an alternative method and has been used to grow e.g. HgI2, PbI2, BiI3, CdTe. PVT growth should eliminate or reduce inclusions and impurities since it is based on sublimation, reduce intrinsic defects due to the lower growth temperature, and reduce dislocation densities due to reduced thermal and mechanical stress. As an example, PVT-grown CdTe showed a much improved structural quality compared to Bridgman- or THM-grown material.

Cröll, Arne↗
NASA NTRS2019

High Performance GaN/AlGaN Ultraviolet Avalanche Photodiode Detector Technologies

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10(exp 6) and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Sood, Ashok K.↗
NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗
NASA NTRSDate not supplied

Electron Irradiation Study of Metamorphic 1.7 eV GaAsP Solar Cells

We investigated the effects of 1 MeV electron irradiation on metamorphic ~1.7 eV GaAsP solar cells on GaP and on GaP/Si. Effects of junction polarity, base thickness, and threading dislocation density on radiation hardness were investigated using the AM0 solar simulator at NASA Glenn Research Center. Degradation of solar cell efficiency after irradiation was dominated by reduced minority carrier diffusion length in the base, leading to loss of long-wavelength carrier collection. Designs with higher base diffusion length or thinner base were favored, and accordingly, devices with n+/p junction polarity were more radiation-hard than those with p+/n junction polarity.

Ryan D Hool↗
NASA NTRS2014

Collisional Effects on Magnesium-rich Minerals found in Comets and Asteroids

While generally touted to be the least-altered bodies remaining from the age of the solar system's formation, comets and asteroids have undergone evolutionary processing throughout the 4.5-billion-year lifetime of the solar system. They have suffered the effects of collisions by impactors ranging in size from micrometeoroids to other comets and asteroids. As such, we must ask ourselves: can we detect these evolutionary effects remotely through telescopic observations? With this in mind, a suite of experiments were conducted, impacting magnesium-rich minerals as analogues to those that have been detected in the spectra of both asteroid surfaces and in the dust of cometary comae, including forsterite (Mg2SiO4, olivine), orthoenstatite (Mg2SiO3, pyroxene), diopside (MgCaSi2O6, monoclinic pyroxene), and magnesite (MgCO3, carbonate). These minerals were impacted at velocities ranging from 2.0 km/s to 2.8 km/s using the vertical gun in the Experimental Impact Laboratory (EIL) at NASA Johnson Space Center. These speeds mimic typical velocities of impacts occurring in the Kuiper belt [1]. Two classes of projectile were used: spherical alumina ceramic, whose density mimics that of rock, and cylinders made from the same material that they impacted (e.g., forsterite impactors for forsterite targets, etc.). The peak shock pressure varies significantly, depending on the target and impactor materials and the velocity; thus, shock effects differed in targets impacted at the same velocity but with compositionally different projectiles. The results indicate both: (a) how varying the impactor-density might change the outcome from a scientific viewpoint, as well as (b) possible contamination effects of the ceramic projectile in the resultant spectra of the target minerals from an experimental perspective. Temperature effects were also investigated by impacting samples at both 25 deg. and -25 deg. to: (a) probe whether the varying temperatures experienced by small bodies plays a role in the resultant spectra, and (b) constrain necessary experimental parameters. Analysis of Fourier Transform Infrared (FTIR) spectra obtained from the experimentally shocked materials shows clear indications of spectral shifts in wavelength, as well as a change in relative peak strengths of the spectral signatures at one wavelength compared with another, in all minerals except magnesite. Samples of the forsterite and orthoenstatite that displayed the spectral changes were examined with a transmission electron microscope, which revealed evidence of planar dislocations. The density of the dislocations in the experimentally shocked minerals mimicked the dislocation densities measured in both forsterite and enstatite grains recovered from Comet Wild 2 by the Stardust mission [2, 3, 4]. Further discussion on analyses of peak shock pressure and temperature-dependent effects can be found in Jensen et al., this meeting

Lederer, S.↗
NASA NTRS2001

The Effect of the Wall Contact and Post-Growth, Cool-Down on Defects in CdTe Crystals Grown By 'Contactless' PVT

To take a maximum advantage of materials processing in microgravity for understanding the effects of gravity, gravity-independent effects should be minimized. In crystal growth, the quality of the grown crystals may depend, among other factors, on their interaction with the walls of the processing container during and after growth, and on the rate of the crystal cool-down at the end of the process. To investigate the above phenomena, a series of CdTe crystal growth processes was carried out. The crystals were grown by physical vapor transport without contact with the side walls of the silica glass ampoules. To eliminate the effect of the seed quality, and to reduce the number of nuclei and related crystal grains, the Low Supersaturation Nucleation technique was applied. The source temperature was 930 C, the undercooling was a few degrees. The crystals, having the diameter of 25 mm, grew at the rate of a few mm per day. The post-growth cool-down to the room temperature was conducted at different rates, and lasted from a few minutes to four days. The crystals were characterized using chemical etching, low temperature luminescence, and Synchrotron White Beam X-ray Topography techniques. The dislocation (etch pit) density was measured and its distribution was analyzed by comparison with Poisson curves and with the Normalized Radial Distribution Correlation Function. In the regions where the crystal is in contact with silica, the materials show a considerable strain field which extends for a few mm or more from the silica-crystal interface. In the reference crystal grown with contact with the ampoule walls, and when the crystals are cooled at the highest rates, the etch pit/dislocation density is in the high 10(exp 5) per square centimeter region. Typical EPD values for lower cool-down rates are in the lower 10(exp 4) per square centimeter region. In some areas the actual dislocation density was about 10(exp 3) per square centimeter or even less. No apparent effect of the cool-down rate on polygonization was observed. Low temperature PL spectra show, that the dominant peak is (D(sup 0), h) and (A(sup 0), e) for samples with low and high dislocation densities, respectively. For low EPD crystals a peak at 1.45 eV with 21 meV phonon replicas was observed and attributed to donor-acceptor pair to neutral copper-acceptor transition. In high EPD crystals this PL structure was not observed, apparently due to the masking effect of the strong contribution from the dislocation band.

Palosz, W.↗
NASA NTRS2006

Recent Results from Epitaxial Growth on Step Free 4H-SiC Mesas

This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.

Neudeck, Philip G.↗
NASA NTRS2001

The Effect of the Wall Contact and Post-Growth C001-Down on Defects in CdTe Crystals Grown by Contactless PVT

In crystal growth, the quality of the final material may depend, among other factors, on its interaction with the walls of the ampoule during and after the growth, and on the rate of the crystal cool-down at the end of ate the process. To investigate the above phenomena, a series of CdTe crystal growth processes was carried out, The crystals were grown by physical vapor transport without contact with the side walls of the silica glass ampoules, applying the Low Supersaturation Nucleation technique. The source temperature was 930 C, the undercooling was a few degrees. The crystals, having the diameter of 25 mm, grew at the rate of a few mm per day. The post-growth cool-down to the room temperature was conducted at different rates, and lasted from a few minutes to four days. The crystals were characterized using chemical etching low temperature luminescence, and Synchrotron White Beam X-ray Topography techniques. The dislocation (etch pit) density was measured and its distribution was analyzed by comparison with Poisson curves and with the Normalized Radial Distribution Correlation Function. It was found that the contact of the crystal with silica leads to a strain field and high (in the 105 sq cm range) dislocation (etch pit) density. Similar defect concentrations were found in crystals subjected to fast post-growth cool-down. Typical EPD values for lower cool-down rates and in regions not affected by wall interactions are in the lower 10(exp 4) sq cm range. In some areas the actual dislocation density was about 10(exp 3) sq cm or even less. No apparent effect of the cool-down rate on polygonization was observed. A fine structure could be discerned in low-temperature PL spectra of crystals with low dislocation density.

Palosz, W.↗
NASA NTRS1976

Rolling-contact deformation of MgO single crystals

Magnesium oxide single crystals were used as a model bearing material and deformed by rolling contact with a steel ball 0.64 cm in diameter. A dependence of depth of slip on rolling velocity which persisted with increasing numbers of rolling-contact cycles was discovered. The track width, track hardness and dislocation interactions as observed by transmission electron microscopy all increased in a consistent manner with increasing cycles. The rolling-contact state of stress produces a high density of dislocations in a localized zone. Dislocation interaction in this zone produces cleavage-type cracks after a large number of rolling-contact cycles. The orientation of the crystal influences the character of dislocation accumulation.

Dufrane, K. F.↗
NASA NTRS1980

Incorporation of superlattice crystal layers in multijunction solar cells

Superlattice layers are effective in decreasing the density of dislocations in lattice mismatched heterostructures at least four orders of magnitude. Hence it was proposed to utilize this feature of superlattices to alleviate the problems due to misfit dislocations generated in the regions between two or more photovoltaic collecting junctions. A further advantage is that the possibility is presented for using silicon as a low cost substrate as well as for the low band gap junction. In the test case, a silicon low gap cell was connected to a GaAs.7P.3 high gap cell through a connecting region containing a GaAs/GaP superlattice.

Blackslee, A. E.↗
NASA NTRS1981

Crystal growth of device quality GaAs in space

Experimental and theoretical efforts in the development of crystal growth approaches, effective techniques for electronic characterization on a macro and microscale, and in the discovery of phenomena and processes relevant to GaAs device applications are reported. The growth of electron trap-free bulk GaAS with extremely low density of dislocations is described. In electroepitaxy, growth configuration which eliminates the substrate back-contact was developed. This configuration can be extended to the simultaneous growth on many substrates with a thin solution layer sandwiched between any two of them. The significant reduction of Joule heating effects in the configuration made it possible to realize the in situ measurement of the layer thickness and the growth velocity. Utilizing the advantages of electroepitaxy in achieving abrupt acceleration (or deceleration) of the growth it was shown that recombination centers are formed as a result of growth acceleration.

Lagowski, J.↗
NASA NTRS1982

Bridgman-type apparatus for the study of growth-property relationships - Arsenic vapor pressure-GaAs property relationship

A precision Bridgman-type apparatus is described which was designed and constructed for the investigation of relationships between crystal growth parameters and the properties of GaAs crystals. Several key features of the system are highlighted, such as the use of a heat pipe for precise arsenic vapor pressure control and seeding without the presence of a viewing window. Pertinent growth parameters, such as arsenic source temperature, thermal gradients in the growing crystal and in the melt, and the macroscopic growth velocity can be independently controlled. During operation, thermal stability better than + or - 0.02 C is realized; thermal gradients can be varied up to 30 C/cm in the crystal region, and up to 20 C/cm in the melt region; the macroscopic growth velocity can be varied from 50 microns/hr to 6.0 cm/hr. It was found that the density of dislocations depends critically on As partial pressure; and essentially dislocation-free, undoped, crystals were grown under As pressure precisely controlled by an As source maintained at 617 C. The free carrier concentration varied with As pressure variations. This variation in free carrier concentration was found to be associated with variations in the compensation ratio rather than with standard segregation phenomena.

Parsey, J. M.↗
NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗
NASA NTRS1988

Microstructural evolution on crystallizing the glassy phase in a 6 weight percent Y2O3-Si3N4 ceramic

X-ray diffraction and analytical electron microscopy have been used to study the crystallization of the grain-boundary glass in a 6 wt pct Y2O3-Si3N4 ceramic. Upon crystallization, high densities of dislocations formed in the Si3N4 grains and remained after 5 h at temperature. However, prolonged holds at the crystallization temperature effectively annealed out the dislocations. Other features present in the microstructure are characterized.

Lee, W. E.↗