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At least 127 records · Page 7

Evolution of Local Microstructures of Clusters Undergoing 2-Dimensional Diffusion

A primary objective of our current work is to study the details of evolving microstructures through a study of "island" formation in heteroepitaxial film/substrate systems. Such systems could be of direct relevance to so-called mixed-dimensional coarsening and to the study of heterostructures grown by thin-film techniques. The spontaneous formation of three-dimensional islands in strained-layer heteroepitaxy, e.g., has emerged as a new technique for the synthesis of self-assembled quantum dots. This work focuses on coarsening by two-dimensional diffusion of three-dimensional droplets on a flat surface.

Frazier, Donald O.↗

Laminar soot processes

Soot processes within hydrocarbon fueled flames are important because they affect the durability and performance of propulsion systems, the hazards of unwanted fires, the pollutant and particulate emissions from combustion processes, and the potential for developing computational combustion. Motivated by these observations, the present investigation is studying soot processes in laminar diffusion and premixed flames in order to better understand the soot and thermal radiation emissions of luminous flames. Laminar flames are being studied due to their experimental and computational tractability, noting the relevance of such results to practical turbulent flames through the laminar flamelet concept. Weakly-buoyant and nonbuoyant laminar diffusion flames are being considered because buoyancy affects soot processes in flames while most practical flames involve negligible effects of buoyancy. Thus, low-pressure weakly-buoyant flames are being observed during ground-based experiments while near atmospheric pressure nonbuoyant flames will be observed during space flight experiments at microgravity. Finally, premixed laminar flames also are being considered in order to observe some aspects of soot formation for simpler flame conditions than diffusion flames. The main emphasis of current work has been on measurements of soot nucleation and growth in laminar diffusion and premixed flames.

Sunderland, P. B.↗

Dynamics of magnetosphere-ionosphere coupling including turbulent transport

A two dimensional two-fluid MHD model including anomalous resistivity was used to investigate the dynamics of magnetosphere-ionosphere coupling. When a field-aligned current is generated on auroral field lines, the disturbance propagates towards the ionosphere in the form of a kinetic Alfven wave. When the current exceeds a critical value, microscopic turbulence is produced, which modifies the propagation of the Alfven wave. This process is modeled by a nonlinear collision frequency, which increases with the excess of the drift velocity over the critical value. Turbulence leads to absorption and reflection of the Alfven wave, partially decoupling the generator from the ionosphere. The approach to a steady-state is strongly dependent on the presence or absence of the turbulence. The current is self-limiting, since a current in excess of critical causes a diffusion of the magnetic field perturbation and a reduction of current.

Lysak, R. L.↗

Temperature dependence of damage coefficient in electron irradiated solar cells

Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.

Faith, T. J.↗

Response of defects to illumination in silicon solar cells

The enhancement of diffusion length with intensity was examined using spectral response measurements in solar cells based on Silso silicon and EFG silicon ribbon. Local diffusion length variations at defect sites were investigated as a function of illumination level using a scanning electron microscope operated in the electron beam induced current mode. An increase of diffusion length was observed at defect sites as the intensity level was increased. The diffusion length improvements are explained on the basis of saturation of minority carrier traps in these materials. The trap distribution in Silso silicon is shown to be peaked near (Ec - 0.7)eV. EFG silicon ribbon shows a broad, Gaussian distribution of traps located near (Ec - 0.5)eV.

Hari Rao, C. V.↗

Helium Pressurization Modeling of the EDU Submerged Diffuser Using Thermal Desktop

NASA is currently working on developing its predictive modeling capabilities to support future missions that require long term storage of cryogenic propellants. Through the Evolvable Cryogenics project, Development and Validation of Analysis Tools (DVAT) task, both CFD and multi-node fluid modeling tools are being validated against to increase the following cryogenic fluid management technologies: Self-Pressurization, Pressure Control, Helium Pressurization, de-stratification, jet mixing, Tank and transfer line chill-down, tank filling and transfer. NASA is using previous and future micro-gravity experiments to validate both types of models. Recent activities include: Validation of the Tank Pressure Control Experiment (TPCE), Hydrogen and Helium pressurization, and Completion of the Zero Boil Off Tank (ZBOT) experiment on ISS. Future activities include validation of the ZBOT experiment with both CFD and multi-node analysis tools, validation of the Cryogenic Demonstration System of the Robotic Refueling Mission (RRM3).

low-gravity fluid modeling↗

Ring current loss mechanisms and composition as inferred from equatorial pitch angle distributions observed during a storm recovery phase

Explorer 45 measurements of pitch angle distributions (PAD's) of ring current ions were examined for evidence of charge exchange or pitch-angle diffusion as loss mechanisms for the ring current during a storm recovery phase. The observed rounding of the PAD's above a minimum parallel energy is seen as resulting from pitch angle diffusion driven by resonant interactions with ion cyclotron waves. Calculations of growth rates using observed ion fluxes and PAD's have shown that ion cyclotron waves can be significantly amplified by the ring current plasma. However, wave growth off the equator must be taken into account in order to understand the time evolution of the observed PAD's. Isotropic distributions at lower energies remain isotropic at L-values between 3 and 4 despite the presence of charge exchange losses. An explanation for this apparent inconsistency may be that ring current is dominated by some ion species other than protons during recovery phase.

Lyons, L. R.↗

Junction characteristics of silicon solar cells.

Precise values of the reverse saturation currents in solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell and to be responsible for up to 30% loss in efficiency for the average cell in a Jupiter-type environment. Models are given demonstrating the effect of recombination and shunting currents on dark and light characteristics of solar cells.

Stirn, R. J.↗

The influence of a voltage ramp on the measurement of I-V characteristics of a solar cell

For efficiency and convenience the voltage applied to a Si solar cell is often fairly rapidly driven from zero to the open circuit value typically at a common rate of 1 V per millisecond. During this time the values of current are determined as a function of the instantaneous voltage thus producing an I-V characteristic. The present paper shows that the customary expressions for the current as a function of cell parameters still remain valid provided that the diffusion length in the expression for the dark current is changed from its steady state value L to the effective diffusion length L1 given by L1 = L(1 + qV/kT.tau) to the -1/2, where V is the ramp rate considered constant and tau is the lifetime of minority carriers. This result is true to a very good approximation provided that low level injection prevails.

Von Roos, O.↗

Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

Gatos, H. C.↗

Development and pilot line production of lithium doped silicon solar cells

The work performed over the period of September 1971 to August 1972 to develop production processes for fabrication of lithium doped P/N cells is described. The BCl3 diffusion without 02 was selected as the optimum diffusion process for fabrication of lithium doped cells. An 8-2-7 (warm up - deposition - drive-in time in minutes) diffusion schedule at 1055 C was used for the first two lots (300 cells each) delivered to JPL. Cell efficiencies ranged from 11.0 to 13.7% based on an AMO of 135.3 mW/sq cm. These high efficiencies were obtained using from 10 to 40 cells per boron diffusion; increasing the quantity beyond 40 resulted in lower outputs. At this point, the emphasis was placed on investigation of a BCl3 with 02 diffusion. Through evaluation of the effects of diffusion time and temperature, gas flow rates, and desposition plus drive-in vs. continuous deposition and no drive-in cycles, diffusion parameters were determined which produced short circuit currents of 136 + or - 4 mA for ten cells spaced along 12 in. of the diffusion boat. The quantity was increased to 60, 100, and 150 cell diffusions with no more variation in cell short circuit current than observed with 10 cells.

Payne, P. A.↗

Moderate temperature detector development

P-side backside reflecting constant, photodiode characterization, and photodiode diffusion and G-R currents were investigated in an effort to develop an 8 m to 12 m infrared quantum detector using mercury cadmium telluride. Anodization, phosphorus implantation, and the graded band gap concept were approaches considered for backside formation. Variable thickness diodes were fabricated with a back surface anodic oxide to investigate the effect of this surface preparation on the diffusion limited zero bias impedance. A modeling technique was refined to thoroughly model diode characteristics. Values for the surface recombination velocity in the depletion region were obtained. These values were improved by implementing better surface damage removal techniques.

Marciniec, J. W.↗

Ion transport and loss in the earth's quiet ring current. I - Data and standard model

A study of the transport and loss of ions in the earth's quiet time ring current, in which the standard radial diffusion model developed for the high-energy radiation belt particles is compared with the measurements of the lower-energy ring current ions, is presented. The data set provides ionic composition information in an energy range that includes the bulk of the ring current energy density, 1-300 keV/e. Protons are found to dominate the quiet time energy density at all altitudes, peaking near L of about 4 at 60 keV/cu cm, with much smaller contributions from O(+) (1-10 percent), He(+) (1-5 percent), and He(2+) (less than 1 percent). A minimization procedure is used to fit the amplitudes of the standard electric radial diffusion coefficient, yielding 5.8 x 10 exp -11 R(E-squared)/s. Fluctuation ionospheric electric fields are suggested as the source of the additional diffusion detected.

Sheldon, R. B.↗

Interstellar hot plasma contributions to the diffuse ultraviolet background

The intensity of the diffuse background emission in the far ultraviolet from hot coronal gas present in the plane and halo of the galaxy is calculated. The main emission lines expected are those of C III, IV, N III, IV and Si III, IV at 1909, 1549, 1749, 1487, 1207 and 1398 A respectively. Unless the gas is unusually clumped or has extremely depleted abundances, this source is not of sufficient intensity to influence current broadband measurements of the diffuse continuous ultraviolet background. However, future observations at higher sensitivity and resolution might have to take this effect into account.

Jakobsen, P.↗

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗

Process Research of Polycrystalline Silicon Material (PROPSM)

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Culik, J. S.↗

Galactic Diffuse Gamma Ray Emission Is Greater than 10 Gev

AGILE and Gamma-ray Large Area Telescope (GLAST) are the next high-energy gamma-ray telescopes to be flown in space. These instruments will have angular resolution about 5 times better than Energetic Gamma-Ray Experiment Telescope (EGRET) above 10 GeV and much larger field of view. The on-axis effective area of AGILE will be about half that of EGRET, whereas GLAST will have about 6 times greater effective area than EGRET. The capabilities of ground based very high-energy telescopes are also improving, e.g. Whipple, and new telescopes, e.g. Solar Tower Atmospheric Cerenkov Effect Experiment (STACEE), Cerenkov Low Energy Sampling and Timing Experiment (CELESTE), and Mars Advanced Greenhouse Integrated Complex (MAGIC) are expected to have low-energy thresholds and sensitivities that will overlap the GLAST sensitivity above approximately 10 GeV. In anticipation of the results from these new telescopes, our current understanding of the galactic diffuse gamma-ray emission, including the matter and cosmic ray distributions is reviewed. The outstanding questions are discussed and the potential of future observations with these new instruments to resolve these questions is examined.

Hunter, Stanley D.↗

Mechanisms of photon-induced changes in silicon solar cell parameters

Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.

Cheng, L. J.↗