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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

Lagowski, J.↗
NASA NTRS1987

High-temperature electronics

In recent years, there was a growing need for electronics capable of sustained high-temperature operation for aerospace propulsion system instrumentation, control and condition monitoring, and integrated sensors. The desired operating temperature in some applications exceeds 600 C, which is well beyond the capability of currently available semiconductor devices. Silicon carbide displays a number of properties which make it very attractive as a semiconductor material, one of which is the ability to retain its electronic integrity at temperatures well above 600 C. An IR-100 award was presented to NASA Lewis in 1983 for developing a chemical vapor deposition process to grow single crystals of this material on standard silicon wafers. Silicon carbide devices were demonstrated above 400 C, but much work remains in the areas of crystal growth, characterization, and device fabrication before the full potential of silicon carbide can be realized. The presentation will conclude with current and future high-temperature electronics program plans. Although the development of silicon carbide falls into the category of high-risk research, the future looks promising, and the potential payoffs are tremendous.

Seng, Gary T.↗
NASA NTRS1989

Continuously-Variable Vernier Scale

Easily fabricated device increases precision in reading graphical data. Continuously-variable vernier scale (CV VS) designed to provide greater accuracy to scientists and technologists in reading numerical values from graphical data. Placed on graph and used to interpolate coordinate value of point on curve or plotted point on figure within division on each coordinate axis. Requires neither measurement of line segments where projection of point intersects division nor calculation to quantify projected value. Very flexible device constructed with any kind of scale. Very easy to use, requiring no special equipment of any kind, and saves considerable amount of time if numerous points to be evaluated.

Miller, Irvin M.↗
NASA NTRS1989

SEU In An Advanced Bipolar Integrated Circuit

Report summarizes investigation of single-event upsets (SEU) in bipolar integrated-circuit set of flip-flops (memory cells). Device tested made by advanced digital bipolar silicon process of Honeywell, Inc. Circuit chip contained 4 cells. Construction enabled study of effect of size on SEU behavior. Each cell externally biased so effect of bias current on SEU behavior. Results of study provides important information for optimal design of devices fabricated using buried-layer bipolar process operating in heavy-ion SEU environments. Designers use information to provide required levels of suppression of SEU in specific applications via combinations of size and/or cell-current scaling.

Zoutendyk, John A.↗
NASA NTRS1988

Electronic materials processing and the microgravity environment

The nature and origin of deficiencies in bulk electronic materials for device fabrication are analyzed. It is found that gravity generated perturbations during their formation account largely for the introduction of critical chemical and crystalline defects and, moreover, are responsible for the still existing gap between theory and experiment and thus for excessive reliance on proprietary empiricism in processing technology. Exploration of the potential of reduced gravity environment for electronic materials processing is found to be not only desirable but mandatory.

Witt, A. F.↗
NASA NTRS1990

Oxide superconductors under magnetic field

One of the current most serious problems for the oxide superconductors from the standpoint of practical application is the various novel features derived mainly from their extremely short coherence. In particular, the coherence length so far observed in the cuprate superconductors is in the range of 0.1 nm perpendicular to the CuO2 plane. This seems to be creating most of the difficulties in the device fabrication and in the performance under the magnetic field. Some of the superconducting properties under the magnetic field will be discussed in terms of the short coherence length. A model will be presented based on the gradual strengthening of the pinning force with decrease in temperature and the weak coupling at the grain boundaries. Secondly, the broadening of the superconducting transition under the magnetic field is discussed. This is observed significantly only when the field is applied perpendicular to the basal plane and the relative orientation of the current to the field is insignificant in determining the extent of the broadening. Besides, the change in the strength of the pinning force does not affect the width of the broadening. From these observations discussions will be made on a model based on the giant fluctuation. Based on this model, it is predicted that the coherence length along the c-axis will be the single most important material parameter to determine the performance of the superconductor under a strong magnetic field. It seems that BYCO is superior in this regard to Bi- or Tl-systems as far as the performance at 77 K is considered, although another material with the coherence length slightly longer along the c-axis is still highly desired.

Kitazawa, K.↗
NASA NTRS1991

Hole-Impeded-Doping-Superlattice LWIR Detectors

Hole-Impeded-Doping-Superlattice (HIDS) InAs devices proposed for use as photoconductive or photovoltaic detectors of radiation in long-wavelength infrared (LWIR) range of 8 to 17 micrometers. Array of HIDS devices fabricated on substrates GaAs or Si. Radiation incident on black surface, metal contacts for picture elements serve as reactors, effectively doubling optical path and thereby increasing absorption of photons. Photoconductive detector offers advantages of high gain and high impedance; photovoltaic detector offers lower noise and better interface to multiplexer readouts.

Maserjian, Joseph↗
NASA NTRS1992

SNS Device Made With Edge-Defined Geometry

YBa(2)Cu(3)O(7-delta)/Au/Nb superconductor/normal-conductor/superconductor (SNS) microbridge devices fabricated using now-standard lithographic techniques and edge geometry to define normally conducting links having submicron-by-several-microns cross-sectional dimensions. Edge geometry allows current to flow only in these planes and takes advantage of longer coherence length at critical YBa(2)Cu(3)O(7-delta)/Au/Nb interface. Sensitivity to damage on edge of YBa(2)Cu(3)O(7-delta)/Au/Nb reduced.

Hunt, Brian D.↗
NASA NTRS1991

Solid state devices

The Solid State Device research program is directed toward developing innovative devices for space remote and in-situ sensing, and for data processing. Innovative devices can result from the standard structures in innovative materials such as low and high temperature superconductors, strained layer superlattices, or diamond films. Innovative devices can also result from innovative structures achieved using electron tunneling or nanolithography in standard materials. A final step is to use both innovative structures and innovative materials. A new area of emphasis is the miniaturization of sensors and instruments molded by using the techniques of electronic device fabrication to micromachine silicon into micromechanical and electromechanical sensors and actuators.

Source record↗
NASA NTRS1991

Oxide superconductors under magnetic field

One of the current most serious problems for the oxide superconductors from the standpoint of practical application is the various novel features derived mainly from their extremely short coherence. In particular, the coherence length so far observed in the cuprate superconductors is in the range of 0.1 nm perpendicular to the CuO2 plane. This seems to be creating most of the difficulties in the device fabrication and in the performance under the magnetic field. Some of the superconducting properties under the magnetic field will be discussed in terms of the short coherence length. A model will be presented based on the gradual strengthening of the pinning force with decrease in temperature and the weak coupling at the grain boundaries. Secondly, the broadening of the superconducting transition under the magnetic field is discussed. This is observed significantly only when the field is applied perpendicular to the basal plane and the relative orientation of the current to the field is insignificant in determining the extent of broadening. Besides, the change in the strength of the pinning force does not affect the width of the broadening. From these observations discussions will be made on a model based on the giant fluctuation. Based on this model, it is predicted that the coherence length along the c-axis will be the single most important material parameter to determine the performance of the superconductor under a strong magnetic field. It seems that BYCO is superior in this regard to Bi- or Tl-systems as far as the performance at 77 K is considered, although another material with the coherence length slightly longer along the c-axis is still highly desired.

Kitazawa, K.↗
NASA NTRS1993

SRAM As An Array Of Energetic-Ion Detectors

Static random-access memory (SRAM) designed for use as array of energetic-ion detectors. Exploits well-known tendency of incident energetic ions to cause bit flips in cells of electronic memories. Design of ion-detector SRAM involves modifications of standard SRAM design to increase sensitivity to ions. Device fabricated by use of conventional complementary metal oxide/semiconductor (CMOS) processes. Potential uses include gas densimetry, position sensing, and measurement of cosmic-ray spectrum.

Buehler, Martin G.↗
NASA NTRS1994

Improved Fabrication Of Back-To-Back Planar Varactor Diodes

Improved method for fabrication of GaAs-based back-to-back planar varactor diodes simplifies processing and makes fabricated devices less vulnerable to damage at various intermediate process steps. Expected to increase device yields and offers several improvements over older method. Process steps modified and juggled providing simplified processing of devices that are more rugged.

Smith, Richard P.↗
NASA NTRS1993

Polydiacetylene thin films for nonlinear optical applications

One very promising class of organic compounds for nonlinear optical (NLO) applications are polydiacetylenes, which are novel in that they are highly conjugated polymers which can also be crystalline. Polydiacetylenes offer several advantages over other organic materials: because of their highly conjugated electronic structures, they are capable of possessing large optical nonlinearities with fast response times; because they are crystalline, they can be highly ordered, which is essential for optimizing their NLO properties; and, last, because they are polymeric, they can be formed as thin films, which are useful for device fabrication. We have actively been carrying out ground-based research on several compounds of interest.

Paley, Mark S.↗
NASA NTRS1995

Growth Of Delta-Doped Layer On Silicon CCD

Response to ultraviolet light enhanced. Back-side-illuminated silicon charge-coupled device fabricated exhibiting nearly 100 percent internal quantum efficiency in near ultraviolet, by using molecular beam epitaxy to grow thin crystalline-silicon layer containing high concentration of boron (p-type dopant). By confining dopant atoms to one or few atomic layers in silicon lattice, concentration-vs.-depth profile made to resemble Dirac delta function, and resulting silicon layer said to be "delta-doped."

Hoenk, Michael E.↗
NASA NTRS1995

The growth of cubic silicon carbide on a compliant substrate

Research has shown that silicon carbide grown on silicon and 6H silicon carbide has problems associated with these substrates. This is because silicon and silicon carbide has a 20% lattice mismatch and cubic silicon carbide has not been successfully achieved on 6H silicon carbide. We are investigating the growth of silicon carbide on a compliant substrate in order to grow defect free silicon carbide. This compliant substrate consists of silicon/silicon dioxide with 1200 A of single crystal silicon on the top layer. We are using this compliant substrate because there is a possibility that the silicon dioxide layer and the carbonized layer will allow the silicon lattice to shrink or expand to match the lattice of the silicon carbide. This would improve the electrical properties of the film for the use of device fabrication. When trying to grow silicon carbide, we observed amorphous film. To investigate, we examined the process step by step using RHEED. RHEED data showed that each step was amorphous. We found that just by heating the substrate in the presence of hydrogen it changed the crystal structure. When heated to 1000 C for 2 minutes, RHEED showed that there was an amorphous layer on the surface. We also heated the substrate to 900 C for 2 minutes and RHEED data showed that there was a deterioration of the single crystalline structure. We assumed that the presence of oxygen was coming from the sides of the silicon dioxide layer. Therefore, we evaporated 2500 A of silicon to all four edges of the wafer to try to enclose the oxygen. When heating the evaporated wafer to 900 C the RHEED data showed single crystalline structure however at 1000 C the RHEED data showed deterioration of the single crystalline structure. We conclude that the substrate itself is temperature dependent and that the oxygen was coming from the sides of the silicon dioxide layer. We propose to evaporate more silicon on the edges of the wafer to eliminate the escape of oxygen. this will allow us to grow single crystal cubic silicon carbide.

Mitchell, Sharanda↗
NASA NTRS1996

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.↗
NASA NTRS1996

Solid State Radiation Dosimeters for Space and Medical Applications

This report describes the development of two radiation monitors (RADMON's) for use in detecting total radiation dose and high-energy particles. These radiation detectors are chip-size devices fabricated in 1.2 micrometer CMOS and have flown in space on both experimental and commercial spacecraft. They have been used to characterize protons and electrons in the Earth's radiation belts, particles from the Sun, and protons used for medical therapy. Having proven useful in a variety of applications, the detector is now being readied for commercialization.

Buehler, Martin G.↗
NASA NTRS1997

Micro-Mechanical Voltage Tunable Fabry-Perot Filters Formed in (111) Silicon

The MEMS (Micro-Electro-Mechanical-Systems) technology is quickly evolving as a viable means to combine micro-mechanical and micro-optical elements on the same chip. One MEMS technology that has recently gained attention by the research community is the micro-mechanical Fabry-Perot optical filter. A MEMS based Fabry-Perot consists of a vertically integrated structure composed of two mirrors separated by an air gap. Wavelength tuning is achieved by applying a bias between the two mirrors resulting in an attractive electrostatic force which pulls the mirrors closer. In this work, we present a new micro-mechanical Fabry-Perot structure which is simple to fabricate and is integratable with low cost silicon photodetectors and transistors. The structure consists of a movable gold coated oxide cantilever for the top mirror and a stationary Au/Ni plated silicon bottom mirror. The fabrication process is single mask level, self aligned, and requires only one grown or deposited layer. Undercutting of the oxide cantilever is carried out by a combination of RIE and anisotropic KOH etching of the (111) silicon substrate. Metallization of the mirrors is provided by thermal evaporation and electroplating. The optical and electrical characteristics of the fabricated devices were studied and show promissing results. A wavelength shift of 120nm with 53V applied bias was demonstrated by one device geometry using 6.27 micrometer air gap. The finesse of the structure was 2.4. Modulation bandwidths ranging from 91KHz to greater than 920KHz were also observed. Theoretical calculations show that if mirror reflectivity, smoothness, and parallelism are improved, a finesse of 30 is attainable. The predictions also suggest that a reduction of the air gap to 1 micrometer results in an increased wavelength tuning range of 175 nm with a CMOS compatible 4.75V.

Patterson, James D.↗