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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

New perspectives on materials and device dynamics using time-resolved full-field diffraction X-ray imaging

Understanding how materials evolve during synthesis, processing, or device operation requires experimental access to structural dynamics across wide ranges of length and time scales, often in bulk samples or even within packaged devices. Time-resolved full-field diffraction X-ray microscopy has recently emerged as a powerful way to meet this need by combining the penetration and structural sensitivity of X-ray diffraction with objective-lens-based magnification, sensitive high-resolution X-ray imaging detectors, and pump-probe and real-time imaging strategies. Advances in full-field X-ray diffraction microscopy, often termed dark-field X-ray microscopy (DFXM), enable simultaneous imaging of extended fields of view while retaining crystallographic selectivity. Time-resolved DFXM promises to enable advances in materials processing and dynamics, electrochemical and photochemical processes, and the design of electronic devices. This Perspective summarizes the key instrumental concepts that define the performance of these methods, including the choice of imaging optics, detector considerations, and the impact of source time structure at synchrotron light sources and X-ray free-electron lasers (XFELs). We discuss the simultaneous use of complementary imaging modes that are increasingly used in practice. The early demonstrations of the potential of time-resolved DFXM include real-time defect and grain-boundary dynamics during metal annealing, stroboscopic imaging of functional devices with high strain sensitivity, and ultrafast pump-probe implementations at XFELs that directly visualize acoustic-wave propagation and energy dissipation in bulk crystals.

Dark-field X-ray microscopy↗
DOE OSTI2022

Fabrication and accelerated long-term stability test of asymmetrical hollow fiber-supported thin film oxygen separation membrane

Asymmetrical hollow fiber-supported thin film membrane may provide microstructural advantages for air separation and oxygen production. The fabrication of such a membrane is usually very difficult, particularly the sintering behaviors and thermal expansion coefficient (TEC) mismatch among multiple layers. This directly affects the reliability and long-term stability of the membrane. Here, in this research, the sintering behaviors of a set of simple oxides are systematically studied and ZnO is identified as a material component for composite substrate La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF)-ZnO. The LSCF-ZnO ratios are further optimized by trading off several factors, e.g., matching the sintering behaviors and TECs of the LSCF-ZnO composite with those of LSCF thin film separation layer while enhancing the substrate strength. With the identified LSCF-ZnO ratio, the LSCF-ZnO composite hollow fiber substrate precursor is formed through slurry spinning process with porous microstructure being formed via phase inversion process. The thin film LSCF dense separation layer is then dip-coated on the substrate followed by co-sintering process. A thin, porous PrBaCo(Fe 0.6 Zr 0.2 Y 0.2 )O 5+δ (PBCFZY) catalyst layer is fabricated on the dense LSCF separation layer with dip-coating and sintering process, forming an asymmetrical membrane device LSCF-ZnO/LSCF/PBCFZY. Oxygen permeation test of the device is systematically conducted, and the fundamental mechanisms are analyzed. An accelerated long-term stability test of the membrane is also conducted (~550h, 46 thermal cycling loads), demonstrating excellent robustness and durability. The device is characterized and analyzed before and after the test. By replacing a considerable amount of high cost LSCF with low cost ZnO in the substrate, it not only enhances the stability but also reduces the capital cost of the membrane for practical applications.

42 ENGINEERING↗
DOE OSTI2025

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Charge transport in amorphous semiconductors is considerably more complicated than the process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveiling electronic properties. Here, we report gigahertz conductivity mapping in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by microwave impedance microscopy (MIM), which probes conductivity without Schottky barrier’s influence. The difference between the dc and microwave conductivities reflects the efficacy of the injection barrier in an accumulation-mode transistor. The conductivity exhibits significant nanoscale inhomogeneity in the subthreshold regime, presumably due to trapping and release from localized states. The characteristic length scale of local fluctuations, as determined by the autocorrelation analysis, is about 200 nm. Using a random-barrier model, we can simulate the spatial variation of the potential landscape, which underlies the mesoscopic conductivity distribution. Furthermore, our work provides an intuitive way to understand the charge transport mechanism in amorphous semiconductors at the microscopic level.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Improving Low-Bandgap Tin–Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing

Low-bandgap Sn/Pb ABX 3 perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). In this work, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20% mppt at 0.06 cm 2 and up to 17.5% mppt at 1 cm 2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.

14 SOLAR ENERGY↗
DOE OSTI2022

Relaxation of stationary states on a quantum computer yields a unique spectroscopic fingerprint of the computer’s noise

Abstract Quantum computing has the potential to revolutionize computing, but its significant sensitivity to noise requires sophisticated error correction and mitigation. Traditionally, noise on the quantum device is characterized directly through qubit and gate measurements, but this approach has drawbacks in that it does not adequately capture the effect of noise on realistic multi-qubit applications. In this paper, we simulate the relaxation of stationary quantum states on a quantum computer to obtain a unique spectroscopic fingerprint of the computer’s noise. In contrast to traditional approaches, we obtain the frequency profile of the noise as it is experienced by the simulated stationary quantum states. Data from multiple superconducting-qubit IBM processors show that noise generates a bath within the simulation that exhibits both colored noise and non-Markovian behavior. Our results provide a direction for noise mitigation but also suggest how to use noise for quantum simulations of open systems.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

All-epitaxial resonant cavity enhanced long-wave infrared detectors for focal plane arrays

Here, we demonstrate a monolithic all-epitaxial resonant-cavity architecture for long-wave infrared photodetectors with substrate-side illumination. An nBn detector with an ultra-thin (t ≈ 350 nm) absorber layer is integrated into a leaky resonant cavity, formed using semitransparent highly doped (n⁺⁺) epitaxial layers, and aligned to the anti-node of the cavity’s standing wave. The devices are characterized electrically and optically and demonstrate an external quantum efficiency of 25% at T ¼ 180 K in an architecture compatible with focal plane array configurations.

42 ENGINEERING↗
DOE OSTI2022

High power density soft x-ray GaAs photodiodes with tailored spectral response

GaAs photodiode arrays have been designed for non-destructive monitoring of x-ray beam position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n junction was employed to reduce the device photocurrent density to optimize the operation with beam power densities up to 20 W mm -2 , mainly coming from hard x-rays. With this approach, the photocurrent is primarily defined by the excess carriers generated by low-energy x-ray photons absorbed near the detector surface. The p–n junction structures were grown by molecular beam epitaxy and processed into 64-element linear photodiode arrays. The devices were characterized first in the visible range with a high-power Ar-ion laser and then tested in the soft and hard x-ray regions up to 10 keV at two beamlines of the National Synchrotron Light Source II. The responsivity was measured to be 0.16 A W -1 at 0.7 keV and 0.05 A W -1 at 6 keV in agreement with modeling. At higher x-ray energies the measured responsivity was lower than predicted in the framework of the carrier diffusion model; a possible explanation is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Magnetic state switching in FeGa microstructures

This work demonstrates that magnetoelectric composite heterostructures can be designed at the length scale of 10µms that can be switched from a magnetized state to a vortex state, effectively switching the magnetization off, using electric field induced strain. This was accomplished using thin film magnetoelectric heterostructures of Fe 81.4 Ga 18.6 on a single crystal (011) [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (PMN-32PT) ferroelectric substrate. Here, the heterostructures were tripped from a multi-domain magnetized state to a flux closure vortex state using voltage induced strain in a piezoelectric substrate. FeGa heterostructures were deposited on a Si-substrate for superconducting quantum interference device magnetometry characterization of the magnetic properties. The magnetoelectric coupling of a FeGa continuous film on PMN-32PT was characterized using a magneto optical Kerr effect magnetometer with bi-axial strain gauges, and magnetic multi-domain heterostructures were imaged using x-ray magnetic circular dichroism—photoemission electron microscopy during the transition to the vortex state. The domain structures were modelled using MuMax 3 , a micromagnetics code, and compared with observations. The results provide considerable insight into designing magnetoelectric heterostructures that can be switched from an ‘on’ state to an ‘off’ state using electric field induced strain.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Measured gain suppression in FBK LGADs with different active thicknesses

In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. Using the CENPA Tandem accelerator at the University of Washington, the response of LGADs with different thicknesses to MeV-range energy deposits from a proton beam were studied. Three LGAD prototypes of 50 μm, 100 μm, and 150 μm were characterized. The devices' gain was determined as a function of bias voltage, incidence beam angle, and proton energy. This study was conducted in the scope of the PIONEER experiment, an experiment proposed at the Paul Scherrer Institute to perform high-precision measurements of rare pion decays. LGADs are considered for the active target (ATAR), and energy linearity is an important property for particle ID capabilities.

Particle tracking detectors↗
DOE OSTI2024

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Porter, Matthew↗
DOE OSTI2020

Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm

In this study, the interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to 20 μm improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2023

Impact of Spatial Variation in Flexibility on System Operations in Electric Power Systems

With the expansion of renewable energy resources in the electric power systems, having flexibility in the setup will allow to maintain the system's reliability and prevailing operations. Such flexibility can be extracted from utility operated and/or consumer owned devices, such as, storage devices, electric vehicles, etc. For the demand side, generally consumer preferences, incentives, etc. enact on the availability of the flexibility; besides, both the spatial and temporal dimension dictates the degree of the flexibility. Consequently, the optimal dispatch of the grid resources might appear intractable as the considerable amount of flexibility are obliquely stemming from the ungovernable consumer devices. Thus characterizing the consequences of diverged feasible flexibility in the system is crucial for operations. In this paper, a procedure is developed to quantify the degree of flexibility of power systems in terms of resource dispatch reconfiguration. Specifically, we develop optimization problems to attain equivalent resource configurations for the power systems to evaluate the spatial volatility of the network and asses the flexibility of the system. The developed process is then validated using numerical simulations for IEEE-30 bus test system.

Sadnan, Rabayet↗
DOE OSTI2020

NREL's Improved Linearity Testing of Photovoltaic Reference Cells

Photovoltaic devices are characterized under standard testing conditions that include a defined reference spectrum and total irradiance. International standards for reference cell calibrations require that reported reference cell response (typically Isc) vs. total irradiance must be linear. How can linearity be efficiently determined? In 2006 NREL developed a test bed, based on the "two-lamp method" that provided a low cost, but low accuracy method for determining whether cell response was linear with irradiance. This paper describes very simple changes to NREL's historical method [1] for determining linearity that yield greatly improved results. It also describes a method that can be used to quantify and correct for non-linearity.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Fabrication, Measurement, and Modeling of GaInP/GaAs Three-Terminal Cells and Strings

Three-terminal (3T) GaInP/GaAs solar cells are fabricated from inverted-grown monolithic tandems and processed with external metal contacts suitable for easy interconnection. Prototype 3T tandems both with and without tunnel junctions are demonstrated. They are characterized as a function of two independent variables in a variety of configurations, with each configuration holding one of the contacts common to two source-meter units (SMUs). Each of these different measurement configurations completely characterizes the device by transforming the results into 6 unique device parameters and plotting the total power parametrically in two dimensions. The performance is fit using a 3T optoelectronic model that includes luminescent coupling as well as important resistances. Eight of these devices are interconnected in various voltage-constrained configurations to form voltage-matched (VM) strings. Measurement and analysis of these III-V devices and strings are generally applicable to all 3T photovoltaics.

photovoltaics↗