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Differences in the accumulation of ion-beam damage in Ni and NiFe explained by atomistic simulations
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Experimental measurements of surface damage and residual stresses in micro-engineered plasma facing materials
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Effect of radiation damage and water radiolysis on corrosion of FeCrAl alloys in hydrogenated water
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Image-based creep-fatigue damage mechanism investigation of Alloy 617 at 950 °C
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Role of pre-existing point defects on primary damage production and amorphization in silicon carbide (β-SiC)
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Chloroplast Autophagy and Ubiquitination Combine to Manage Oxidative Damage and Starvation Responses
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Influence of the Damage Partition Function on the Uncertainty of the Silicon Displacement Damage Metric.
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Dual-wavelength laser-induced damage threshold of a HfO2/SiO2 dichroic coating developed for high transmission at 527 nm and high reflection at 1054 nm.
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Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.
The Role of Crystallographic Texture on Plastic Damage and Fracture of Metal: A Coupled Phase Field Damage and Crystal Plasticity Modeling Study
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Use of Damage Metrics in Assessing Neutron Damage to Semiconductors
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