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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

α-Particle Detection and Charge Transport Characteristics in the A 3 M 2 I 9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb)

Here, we have investigated the defect perovskites A 3 M 2 I 9 (A = Cs, Rb; M = Bi, Sb) as materials for radiation detection. The phase purity of Bridgman-grown A 3 M 2 I 9 single crystals was confirmed via high-resolution synchrotron X-ray diffraction, while density functional theory calculations (DFT) show surprisingly dispersive bands in the out-of-plane direction for these layered materials, with low effective masses for both holes and electrons. Accordingly, each of the four A 3 M 2 I 9 defect perovskites showed response to 241 Am α-particle irradiation for hole and electron electrode configurations, a remarkable ambipolar response that resembles the 3D halide perovskites. The electron response spectra were used to estimate the mobility–lifetime product (μτ) e for electrons in these materials, with Rb 3 Bi 2 I 9 showing the lowest (μτ) e value of 1.7 × 10 – 6 cm 2 V –1 and Cs 3 Bi 2 I 9 the highest (μτ) e of 5.4 × 10 –5 cm 2 V –1 . The rise time of the α-particle-generated pulse was used to estimate the electron mobility μ e of the A 3 M 2 I 9 defect perovskites, which ranged from 0.32 cm 2 V –1 s–1 for Rb 3 Sb 2 I 9 to 4.3 cm 2 V –1 s –1 in Cs 3 Bi 2 I 9 . Similar analysis of the hole response spectra yielded (μτ) h values for each A 3 M 2 I 9 compound, with Cs 3 Bi 2 I 9 again showing the highest (μτ) h value of 1.8 × 10 –5 cm 2 V –1 , while Rb 3 Bi 2 I 9 showed the lowest (μτ) h with 2.0 × 10 –6 cm 2 V –1 . Rise time analysis gave hole mobilities ranging from 1.7 cm 2 V –1 s –1 for Cs 3 Bi 2 I 9 to 0.14 cm 2 V –1 s –1 for Cs 3 Sb 2 I 9 . Comparing the experimental electron and hole mobilities to the effective masses obtained from DFT calculations revealed sizable discrepancies, possibly indicating self-trapping of charge carriers due to electron–phonon interactions. The α-particle response of the A 3 M 2 I 9 defect perovskites demonstrates their potential as semiconductor radiation detectors, with Cs 3 Bi 2 I 9 and Cs 3 Sb 2 I 9 showing the most promise.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Characteristics of Water Vapor Turbulence Profiles in Convective Boundary Layers During the Wet and Dry Seasons Over Darwin

This study explores water vapor turbulence in the convective boundary layer (CBL) using the Raman lidar observations the Atmospheric Radiation Measurement (ARM) site located at Darwin, Australia. These observations have temporal and vertical resolutions of 10 s and 37.5 m, respectively. An autocovariance technique has been used to separate out the random instrument error from the atmospheric variability during time periods when the CBL is cloud-free, quasi-stationary and well mixed. We identified 62 cases, comprising of 13 monsoon and 49 non-monsoon events, over the 5-year data record period. The seasonal variations of the vertical profiles of integral scale, variance, coefficient of the structure function, and skewness were analyzed and compared with similar observations from the Raman lidar at the ARM Southern Great Plains (SGP) site. The monsoon shows larger median variance profiles than the non-monsoon. The median profile of the variance from the non-monsoon and the SGP site are found to have similar magnitudes between 0.3-0.75 zi, while the median variance profile from the monsoon and the SGP are approximately the same between 0.9-1.1 zi. The variance and coefficient of the structure function are linearly related by height, with larger slopes in the monsoon season suggesting larger dissipation rates in that season relative to the non-monsoon. The median value in the skewness is mostly positive below 0.6 zi and above this it becomes negative until it crosses zero just below 1.0 zi. Its smallest value is seen at around 0.95 zi and it remains positive above 1.0 zi.

Osman, Mohammed K.↗
DOE OSTI2013

Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

The MOCVD grown GaN epi-layers of different thickness have been examined in order to clarify a role of surface recombination, to separate an impact of radiative and non-radiative recombination and disorder factors. The microwave probed –photoconductivity (MW-PC) and spectrally resolved photo-luminescence (PL) transients were simultaneously recorded under ultraviolet (UV) light 354 nm pulsed 500 ps excitation. The MW-PC transients exhibited the carrier decay components associated with carrier decay within micro-crystals and the disordered structure on the periphery areas surrounding crystalline columns. Three PL bands were resolved within PL spectrum, namely, the exciton ascribed UV-PL band edge for hν>3.3 eV, blue B-PL band for 2.5 < hν < 3.0 eV and yellow Y-PL band with hν < 2.4 eV. It has been obtained that intensity of UV-PL band increases with excitation density, while intensity of B-PL band is nearly invariant. However, intensity of the Y-PL increases with reduction of the excitation density. The Y-PL can be associated with trapping centers. A reduction of UV excitation density leads to a decrease of the relative amplitude of the asymptotic component within the MW-PC transients and to an increase of the amplitude as well as duration of the yellow spectral band (Y-PL) asymptotic component. Fractional index α with values 0.5 < α < 0.8 was evaluated for the stretched-exponent component which fits the experimental transients determined by the disordered structure ascribed to the periphery areas surrounding the crystalline columns.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characteristic time for halo current growth and rotation

We report a halo current flows for part of its path through the plasma edge and for part through the chamber walls and during tokamak disruptions can be as large as tenths of the plasma current. The primary interest in halo currents is the large force that they can exert on machine components particularly if the toriodal rotation of the halo current resonates with a natural oscillation frequency of the tokamak device. Halo currents arise when required to slow down the growth of a kink that is too unstable to be stabilized by the chamber walls. The width of the current channel in the halo plasma is comparable to the amplitude of the kink, and the halo current grows linearly, not exponentially, in time. The current density in the halo is comparable to that of the main plasma body. The rocket force due to plasma flowing out of the halo and recombining on the chamber walls can cause the non-axisymmetric magnetic structure produced by the kink to rotate toroidally at a speed compara-ble to the halo speed of sound. Lastly, Gerhardt’s observations of the halo current in NSTX shot 141 687 [Nucl. Fusion 53, 023005 (2013)] illustrate many features of the theory of halo currents and are discussed as a summary of the theory.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Charge state distribution and emission characteristics in a table top reflex discharge—Effect of ion confinement and electrons accelerated across the sheath

Tabletop reflex discharges in a Penning geometry have many applications including ion sources and eXtreme Ultra-Violet (XUV) sources. The presence of primary electrons accelerated across the cathode sheaths is responsible for the distribution of ion charge states and of the unusually high XUV brightness of these plasmas. Absolutely calibrated space resolved XUV spectra from a table top reflex discharge operating with Al cathodes and Ne gas are presented. The spectra are analyzed with a new and complete model for ion charge distribution in similar reflex discharges. The plasma in the discharge was found to have a density of ∼10{sup 18 }m{sup −3} with a significant fraction >0.01 of fast primary electrons. The implications of the new model on the ion states achievable in a tabletop reflex plasma discharge are also discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24–500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Periodic Surface Morphology Characteristics of Tungsten Under Simultaneous Helium and Deuterium Bombardment at 30 keV

The ITER divertor will feature tungsten monoblocks as the plasma-facing component (PFC) that will be subject to extreme temperature and radiation environments. This paper reports the development of surface morphologies on tungsten under helium bombardment at high temperatures, which has important implications for safety, retention, and PFC erosion. Polycrystalline tungsten samples were implanted in the Dual Advanced Ion Simultaneous Implantation Experiment dual-beam ion implantation experiment at the University of Wisconsin-Madison with He-only and simultaneous He-D implantation at incidence angles of 55 deg, ion energies of 30 keV, and surface temperatures of 900°C to 1100°C. Morphologies resulting from angled incidence conditions differed from those produced under normal incidence bombardment at similar energy and temperature conditions in previous work. A variety of ordered and disordered morphologies dependent on grain orientation were observed for fluences up to 6 × 10 18 He cm –2 . These morphologies displayed dependencies on crystal orientation at low fluences and incident beam directions at higher fluences. Furthermore, these structures appeared, with variation, under both single-species He and mixed He-D implantations.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10 13 cm -2 . Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗