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At least 127 records · Page 7

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NASA NTRS1992

Large-area YBa2Cu3O(7-delta) thin films on sapphire for microwave applications

We have deposited YBa2Cu3O(7-delta) (YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (1 0 -1 0) sapphire, and R-plane (1 -1 0 2) sapphire is buffered by CeO2. Rs values of 450-620 microhms at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 microohms for a 5-cm-diam wafer and 700 microohms for 1 x 1 sq cm samples.

Cole, B. F.↗

NASA NTRS2003

Control of Thermal Convection in Layered Fluids Using Magnetic fields

Immiscible fluid layers are found in a host of applications ranging from materials processing, for example the use of encapsulants in float zone crystal growth technique and a buffer layer in industrial Czochralski growth of crystals to prevent Marangoni convection, to heat transfer phenomena in day-to-day processes like the presence of air pockets in heat exchangers. In the microgravity and space processing realm, the exploration of other planets requires the development of enabling technologies in several fronts. The reduction in the gravity level poses unique challenges for fluid handling and heat transfer applications. The present work investigates the efficacy of controlling thermal convective flow using magnetic fluids and magnetic fields. The setup is a two-layer immiscible liquids system with one of the fluids being a diluted ferrofluid (super paramagnetic nano particles dispersed in carrier fluid). Using an external magnetic field one can essentially dial in a volumetric force - gravity level, on the magnetic fluid and thereby affect the system thermo-fluid behavior. The paper will describe the experimental and numerical modeling approach to the problem and discuss results obtained to date.

Ramachandran, N.↗

DOE OSTI2025

In Situ MOVPE Smoothing of Acoustically Spalled GaAs for Substrate Reuse

High material costs, especially for substrates, have limited the widespread adoption of III-V photovoltaics. A potential to reduce this cost is to reuse the III-V substrate via acoustic spalling, however this technique can leave a rough surface, hindering subsequent device performance. This research investigates the potential of using metalorganic vapor-phase epitaxy growth as a buffer layer to smooth the surface of acoustically spalled germanium and gallium arsenide (GaAs) substrates for improved III-V photovoltaic cell yield and performance, while retaining the maximum number of reuses of a substrate. Three potential smoothing layers were explored: lightly doped C:GaAs, highly doped Se:GaInP, and lightly doped Se:GaInP. C:GaAs showed the most promise as a smoothing layer, while Se:GaInP tended to conform to the underlying morphology, potentially increasing roughness in some areas. Utilizing 5 ..mu..m of C:GaAs as a planarizing buffer increased the average efficiency (without an antireflection coating) from an as-spalled baseline from 2.1% to 4.9% and performing a 5-min 30 degrees C 8:1:1 H2SO4:H2O2:H2O etch prior to a 5 ..mu..m of C:GaAs as a planarizing buffer further increased efficiency to 11.1%.

14 SOLAR ENERGY↗

NASA NTRS1992

Growth parameters affecting the formation of buried CoSi2 by endotaxy of Co on Si(111)

At growth temperatures of roughly 800 C, Co deposited on Si (111 ) diffuses through a Si capping layer and exhibits oriented growth on buried CoSi2 seeds, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 under certain growth conditions. High-quality continuous single-crystal buried silicide layers have been obtained by endotaxy. This requires very low densities of attractive nucleation sites other than the buried seeds. For this reason, use of a silicon buffer layer and a low base pressure in the molecular-beam epitaxy system are found to be essential. Growth conditions required for high-quality layers and problems which result from growth outside these limits are discussed.

Fathauer, R. W.↗

NASA NTRS1991

Turbulent boundary layer separation over a rearward facing ramp and its control through mechanical excitation

A vane oscillating about a fixed point at the inlet to a two-dimensional 20 degree rearward facing ramp has proven effective in delaying the separation of a turbulent boundary layer. Measurements of the ramp surface static pressure coefficient obtained under the condition of vane oscillation and constant inlet velocity revealed that two different effects occurred with surface distance along the ramp. In the vicinity of the oscillating vane, the pressure coefficients varied as a negative function of the vane's trailing edge rms velocity; the independent variable on which the rms velocity depends are the vane's oscillation frequency and its displacement amplitude. From a point downstream of the vane to the exit of the ramp; however, the pressure coefficient varied as a more complex function of the two independent variables. That is, it was found to vary as a function of the vane's oscillation frequency throughout the entire range of frequencies covered during the test, but over only a limited range of the trailing edge displacement amplitudes covered. More specifically, the value of the pressure coefficient was independent of increases in the vane's displacement amplitude above approximately 35 inner wall units of the boundary layer. Below this specific amplitude it varied as a function of the vane's trailing edge rms velocity. This height is close to the upper limit of the buffer layer. A parametric study was made to determine the variation of the maximum static pressure recovery as a function of the vane's oscillation frequency, for several ramp inlet velocities and a constant displacement amplitude of the vane's trailing edge. The results indicate that the phenomenon producing the optimum delay of separation may be Strouhal number dependent. Corona anemometer measurements obtained in the inner wall regions of the boundary layer for the excited case reveal a large range of unsteadiness in the local velocities. These measurements imply the existence of inflections in the profiles, which provide a mechanism for resulting inviscid flow instabilities to produce turbulence in the near wall region, thereby delaying separation of the boundary layer.

Mckinzie, Daniel J., Jr.↗

NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗

DOE OSTI2023

Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure

The interface atomic structure between an epitaxial thin film of the prototype topological semimetal cadmium arsenide (Cd 3 As 2 ) and a III–V semiconductor layer is investigated using high-angle annular dark-field imaging in an aberration-corrected scanning transmission electron microscope. We find that the interface unit cell adopts a defined stoichiometry that is CdSb-like, which is achieved through the insertion of periodically arranged Cd vacancies in the terminating Cd-plane of Cd 3 As 2 . This interface stoichiometry is consistent with the Sb-termination of the III–V layer and the fact that CdSb is the thermodynamically stable phase in the Cd–Sb binary system. We find at least two distinct alignments of the film with respect to the buffer layer, which are characterized by a $\frac{1}{4}$ <100> Cd 3 As 2 shift parallel to the interface. We show that steps of half unit cell height in the III–V layer can produce these distinct interface structures.

74 ATOMIC AND MOLECULAR PHYSICS↗

NASA NTRS2023

An Evaluation of A Physics-Based Firn Model and A Semi-Empirical Firn Model Across the Greenland Ice Sheet (1980–2020)

The Greenland Ice Sheet's (GrIS) firn layer buffers the ice sheet's contribution to sea level rise by storing meltwater in its pore space. However, available pore space and meltwater retention capability is lost due to ablation of the firn layer and refreezing of meltwater as near-surface ice slabs in the firn. Understanding how firn properties respond to climate is important for constraining the GrIS's future contribution to sea level rise in a warming climate. Observations of firn density provide detailed information about firn properties, but they are spatially and temporally limited. Here we use two firn models, the physics-based SNOWPACK model and the Community Firn Model configured with a semi-empirical densification equation (CFM-GSFC), to quantify firn properties across the GrIS from 1980 through 2020. We use an identical forcing (Modern-Era Retrospective Analysis for Research and Applications, version 2 (MERRA-2) atmospheric reanalysis) for SNOWPACK and the CFM-GSFC in order to isolate firn model differences. To evaluate the models, we compare simulated firn properties, including firn air content (FAC), to measurements from the Surface Mass Balance and Snow on Sea Ice Working Group (SUMup) dataset of snow and firn density. Both models perform well (mean absolute percentage errors of 14 % in SNOWPACK and 16 % in the CFM-GSFC), though their performance is hindered by the spatial resolution of the atmospheric forcing. In the ice-sheet-wide simulations, the 1980–1995 average spatially integrated FAC (i.e., air volume in the firn) for the upper 100 m is 34 645 km 3 from SNOWPACK and 28 581 km 3 from the CFM-GSFC. The discrepancy in the magnitude of the modeled FAC stems from differences in densification with depth and variations in the sensitivity of the models to atmospheric forcing. In more recent years (2005–2020), both models simulate substantial depletion of pore space. During this period, the spatially integrated FAC across the entire GrIS decreases by 3.2 % (−66.6 km 3 yr −1 ) in SNOWPACK and 1.5 % (−17.4 km 3 yr −1 ) in the CFM-GSFC. These differing magnitudes demonstrate how model differences propagate throughout the FAC record. Over the full modeled record (1980–2020), SNOWPACK simulates a loss of pore space equivalent to 3 mm of sea level rise buffering, while the CFM-GSFC simulates a loss of 1 mm. The greatest depletion in FAC is along the margins and especially along the western margin where observations and models show the formation of near-surface, low-permeability ice slabs that may inhibit meltwater storage.

Megan Thompson-Munson↗

DOE OSTI2025

Uncooled GeSn MWIR Photodetectors Using Fully Relaxed Thin Triple‐Step Buffer

GeSn photodetectors monolithically grown on Ge virtual substrates demonstrate mid-wave infrared (MWIR) detection at room temperature. The lattice mismatch between GeSn and Ge causes dislocations and compressive strain, creating leakage pathways and unwanted indirect band transitions. Designed thin Ge 0.91 Sn 0.09 triple-step buffer layers of ≈175 nm total thickness reduce dislocations and enable full relaxation, showing 100% lattice relaxation and smooth surface roughness of 0.83 nm with shorter auto-correlation length in surface morphology compared to single-step buffers. Ge 1-x Sn x photodetectors (x = 0.09, 0.12, and 0.15) on triple-step buffers with n-i-p configurations achieve lattice strain relaxations of 99%, 88%, and 80%, respectively. Ge 0.91 Sn 0.09 and Ge 0.88 Sn 0.12 show gradual variation in auto-correlation amplitude, while Ge 0.85 Sn 0.15 shows an increase due to lattice mismatch. Shockley–Read–Hall recombination current dominates at low reverse bias due to mismatch-induced dislocations, while band-to-band tunneling current dominates at higher reverse bias due to narrowing bandgap under strong electric fields. Here, the photodetectors show extended spectral response with increasing Sn composition of i-GeSn active layer sandwiched by barriers. Ge 0.88 Sn 0.12 and Ge 0.85 Sn 0.15 exhibit extended wavelength cut-offs of 3.12 and 3.27 µm at room temperature, demonstrating significant potential for silicon-based MWIR applications.

GeSn↗

DOE OSTI2020

Interfacial stabilization for epitaxial CuCrO 2 delafossites

AB O 2 delafossites are fascinating materials that exhibit a wide range of physical properties, including giant Rashba spin splitting and anomalous Hall effects, because of their characteristic layered structures composed of noble metal A and strongly correlated B O 2 sublayers. However, thin film synthesis is known to be extremely challenging owing to their low symmetry rhombohedral structures, which limit the selection of substrates for thin film epitaxy. Hexagonal lattices, such as those provided by Al 2 O 3 (0001) and (111) oriented cubic perovskites, are promising candidates for epitaxy of delafossites. However, the formation of twin domains and impurity phases is hard to suppress, and the nucleation and growth mechanisms thereon have not been studied for the growth of epitaxial delafossites. In this study, we report the epitaxial stabilization of a new interfacial phase formed during pulsed-laser epitaxy of (0001)-oriented CuCrO 2 epitaxial thin films on Al 2 O 3 substrates. Through a combined study using scanning transmission electron microscopy/electron-energy loss spectroscopy and density functional theory calculations, we report that the nucleation of a thermodynamically stable, atomically thick CuCr 1-x Al x O 2 interfacial layer is the critical element for the epitaxy of CuCrO 2 delafossites on Al 2 O 3 substrates. This finding provides key insights into the thermodynamic mechanism for the nucleation of intermixing-induced buffer layers that can be used for the growth of other noble-metal-based delafossites, which are known to be challenging due to the difficulty in initial nucleation.

36 MATERIALS SCIENCE↗

NASA NTRS2005

Chemically Deposited Thin-Film Solar Cell Materials

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Raffaelle, R.↗

NASA NTRS2010

Boundary Layers, Transitions and Separation

Effects of roughness in boundary layers have to be addressed. Until adverse pressure gradient effects are understood, roughness will not significantly drive design. Mechanisms responsible for separation not understood. Effects on Zero Pressure Gradient boundary layers (shear stress). Effects on separation in pressure gradient (prediction of separation). Effect on scalar transport (heat transfer) not understood. Model for skin friction needed in simulations - first grid point likely to be in buffer layer. Definition of roughness important for useful experiments. A lot of validation experiments will be needed. How to get to ks for roughness of engineering interest? - depends on wavelength height, etc. for engineering interest? Re-discovering the wheel should be avoided: existing knowledge (theoretical and experimental) should find its way into the engineering models. It is a task of the industry to filter out the existing information in the literature for results relevant to its application, being external or internal.

Source record↗

DOE OSTI2020

Origin of the Tunable Carrier Selectivity of Atomic-Layer-Deposited TiOx Nanolayers in Crystalline Silicon Colar Cells

Titanium oxide (TiOx) nanolayers grown by atomic layer deposition are investigated with respect to their application as carrier selective contacts for crystalline silicon (c-Si) solar cells. Although TiOx is known to act as an electron contact, in this work the selectivity of TiOx layers is found to be widely tunable from electron to hole selective depending on deposition conditions, post-deposition treatments, and work function of the metal electrode used. Using TiOx and an intrinsic hydrogenated amorphous silicon buffer layer, solar cell test structure exhibiting open-circuit voltages (Voc) as high as 720 and 650 mV are shown for electron and hole selective contacts, respectively. Surface photovoltage and capacitance-voltage measurements reveal that carrier selectivity is correlated with the amount of c-Si band bending induced by TiOx, which are governed not only by the effective work function difference at the Si/TiOx interface, but also by the negative fixed charge present in the TiOx layer. This new finding is in contrast to the previous model for carrier transport where selectivity is determined only by the asymmetric band offsets at the Si/contact interface. It highlights the influence of induced band bending to produce carrier depletion/inversion conditions, and the importance of its selectivity effect in a c-Si absorber.

14 SOLAR ENERGY↗

DOE OSTI2021

Modeling Electrokinetics of Oxygen Electrodes in Solid Oxide Electrolyzer Cells

A microscale model is presented in this study to simulate electrode kinetics of the oxygen electrode in a solid oxide electrolyzer cell (SOEC). Two mixed ionic/electronic conducting structures are examined for the oxygen producing electrode in this work: single layer porous lanthanum strontium cobalt ferrite (LSCF), and bilayer LSCF/SCT (strontium cobalt tantalum oxide) structures. A yttrium-stabilized zirconia (YSZ) electrolyte separates the hydrogen and oxygen electrodes, as well as a gadolinium doped-ceria (GDC) buffer layer on the oxygen electrode side. Electrochemical reactions occurring at the two-phase boundaries (2PBs) and three-phase boundaries (3PBs) of single-layer LSCF and bilayer LSCF/SCT oxygen electrodes are modeled under various SOEC voltages with lattice oxygen stoichiometry as the key output. The results reveal that there exists a competition in electrode kinetics between 2PBs and 3PBs, but 3PBs are the primary reactive sites for single-layer LSCF oxygen electrode under high voltages. These locations experience the greatest oxygen stoichiometry variations and are therefore the most likely locations for dimensional changes. By applying an active SCT layer over LSCF, the 2PBs become activated to compete with the 3PBs, thus alleviating oxygen stoichiometry variations and reducing the likelihood of dimensional change. This strategy could reduce lattice structural expansion, proving to be valuable for electrode-electrolyte delamination prevention and will be the focus of future work.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2020

Metastability and Long-Term Degradation in CIGS Devices: Effect of Alkali Treatments, Back Contact and Emitter Layers

Thin-film solar cell technologies often suffer from metastable and long-term performance degradation, which may or may not be reversible. The presence of the transient or degradation issues pose challenges for energy-yield prediction in the field for these technologies. Cu(In,Ga)(S,Se) 2 solar cells are a promising thin-film technology, however, the underlying mechanisms of instability in these devices are not well understood. The most common mechanism of metastability in CIGS solar cells has been speculated to be the configuration changes of (VSe-VCu) divacancy complex. However, the role of metastability in light soaking behavior and the effect of alkali treatments and buffer layers is not understood. The goal of the current project is to understand the effect of alkali treatments and buffer materials on metastability and light soaking behavior and develop a device model to simulate experimental results. Input parameters are taken from literature or derived from first-principle calculations, and are fine-tuned through validation experiments.

14 SOLAR ENERGY↗

DOE OSTI2020

Semi-transparent p-type barium copper sulfide as a back contact interface layer for cadmium telluride solar cells

Optically transparent p-type materials play a critical role in transparent electronics including photovoltaic (PV) devices. P-type sulfide materials offer an alternative to oxides for PV application due to improved hole transport properties. Here, we report the solution-based synthesis of earth-abundant p-type transparent conducting barium copper sulfide (α-BaCu 4 S 3 , BCS) thin films. These films were characterized using scanning electron microscopy, X-ray diffraction, UV–Vis–NIR spectrophotometry, Raman spectroscopy, and spectroscopic ellipsometry. BCS films of ~100 nm thickness transmit >70% of visible light. We report on tests of the hole transport properties of these BCS films for cadmium telluride (CdTe) photovoltaics, finding that the BCS deposition process forms a beneficial tellurium (Te) rich surface on CdTe by selectively removing Cd from the surface. Based on our study, the BCS interface layer plays dual functions for CdTe PV devices as a hole transport material and as an etchant, enhancing the resulting device performance. We observed a significant increase in open-circuit voltage of CdTe solar cells with the BCS buffer layer. Furthermore, we discuss semitransparent CdTe solar cells with BCS as a hole transport layer and indium tin oxide as a finishing electrode. Semitransparent CdTe solar cells shows 13.3% conversion efficiency for the front side illumination and 1.2% efficiency for back side illumination, indicating high recombination of charge carriers generated close to the rear CdTe/BCS/ITO contact.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Virtual Substrates for Wide Bandgap AlyX1-yN Growth

Lattice-matched substrates are critical for growth of high quality, compositionally-targeted ternary AlyX1-yN compounds with properties suitable for a wide variety of next-generation opto- and power electronic applications. [DOI:10.1149/2.0111702jss] We have identified the (111) plane of transition metal carbides and nitrides as lattice matched "virtual" substrate layers that have additional benefits of electrical conductivity and appropriate coefficients of thermal expansion for nitride layer at both growth and operating temperatures. [arXiv:2208.11769 2022] In this work, (111)-oriented TaC and ZrN are grown by RF sputtering and optimized as substrate layers for AlyGa1-yN and AlyGd1-yN, respectively. TaC is demonstrated as a full proof of concept. (111)-stabilized TaC layers with a rock-salt crystal structure are annealed to improve surface crystal quality and surface morphology and then used as a template for growth of an Al0.7Ga0.3N layer by molecular beam epitaxy. X-ray diffraction (XRD) demonstrates epitaxial registry of the grown layer to the substrate. High resolution transmission electron microscopy (TEM) is used to investigate interface behavior, showing regions of abrupt interface transitions and nitrogen polar termination of the Al0.7Ga0.3N. We also grew (111)-oriented ZrN on Ti-Zr-N graded buffer layers as a lattice-matched virtual substrate for AlyGd1-yN. Structure, morphology, and strain are analyzed using XRD and atomic force microscopy. Structure and quality of initial Al0.8Gd0.2N thin films are investigated for both in-situ and ex-situ growths.

AlyX1-yN↗

DOE OSTI2021

Hybrid planar-mixed heterojunction for organic photovoltaics

Disclosed herein are organic photosensitive optoelectronic devices comprising two electrodes in superposed relation; a mixed photoactive layer located between the two electrodes, wherein the mixed photoactive layer comprises at least one donor material having a HOMO energy and at least one acceptor material having a LUMO energy, wherein the at least one donor material and the at least one acceptor material form a mixed donor-acceptor heterojunction; a photoactive layer adjacent to and interfacing with the mixed photoactive layer, wherein the photoactive layer comprises a material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material or a HOMO energy within 0.3 eV of the HOMO energy of the at least one donor material; and a buffer layer adjacent to and interfacing with the mixed photoactive layer.

Forrest, Stephen R.↗