SEARCH · Engineering Papers

Results for “binary devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

All sources NASA NTRS DOE OSTI

DOE OSTI2024

Point defects and doping in wurtzite LaN

Wurtzite LaN (wz-LaN) is a semiconducting nitride that has piezoelectric and ferroelectric properties, making it promising for applications in electronics, either as a binary compound or in alloys such as LaAlN. The prospects for wz-LaN in devices are influenced by the properties of point defects and impurities; here, we use first-principles density functional theory with a hybrid functional to calculate their formation energies, as well as their atomic and electronic structures. Among native point defects, we find that nitrogen-related defects, both vacancies ($V^+_N$) and interstitials ($N^-_i$), are energetically most favorable under most relevant chemical potentials and positions of the Fermi level; $V^0_N$ may additionally be observed under N-poor conditions, and $N^0_i$ may be prominent under N-rich conditions. We also investigate the incorporation of oxygen and hydrogen, which will likely be present as unintentional impurities. We find that the $O^+_N$ substitutional species readily forms, but oxygen will not lead to n-type conductivity due to formation of DX centers and compensation by interstitial defects. Similarly, substitutional HN and interstitial H i can compensate both p- and n-type dopants. Our results provide detailed, microscopic guidance for the development of electronic devices based on wz-LaN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Lightweight Embedded Controller in Advanced FPGA SoC for Radar Signal Processing [Poster]

The objective of the project is to demonstrate that critical control functions can be implemented using little resources in modern microelectronics. A finite state machine (Figure 1) is implemented onto a field programmable gate array (FPGA). The functionality of the system is demonstrated by sending binary instructions to the controller. The controller transmits patterns through an LED, controls an electromechanical device, and uses pulse-width modulation (PWM) for radar functions.

42 ENGINEERING↗

NASA NTRS1971

Fast carry accumulator design

Simple iterative accumulator combined with gated-carry, carry-completion detection, and skip-carry circuits produces three accumulators with decreased carry propagation times. Devices are used in machine control, measurement equipment, and computer applications to increase speed of binary addition. NAND gates are used in combining network.

Mastin, W. C.↗

NASA NTRS1986

Some design constraints required for the use of generic software in embedded systems: Packages which manage abstract dynamic structures without the need for garbage collection

The embedded systems running real-time applications, for which Ada was designed, require their own mechanisms for the management of dynamically allocated storage. There is a need for packages which manage their own internalo structures to control their deallocation as well, due to the performance implications of garbage collection by the KAPSE. This places a requirement upon the design of generic packages which manage generically structured private types built-up from application-defined input types. These kinds of generic packages should figure greatly in the development of lower-level software such as operating systems, schedulers, controllers, and device driver; and will manage structures such as queues, stacks, link-lists, files, and binary multary (hierarchical) trees. Controlled to prevent inadvertent de-designation of dynamic elements, which is implicit in the assignment operation A study was made of the use of limited private type, in solving the problems of controlling the accumulation of anonymous, detached objects in running systems. The use of deallocator prodecures for run-down of application-defined input types during deallocation operations during satellites.

Johnson, Charles S.↗

NASA NTRS1993

Asymmetric three-beam binary optic grating

Binary and diffractive optical components are finding many applications in optical systems and integrated optical devices. A recent application required the development of a two-dimensional diffraction grating to perform an asymmetric, three-beam fanout. In this paper, techniques are presented for the design of arbitrary fanout grating devices. Modeling and optimization processes are demonstrated for the three-beam grating. The counter-intuitive results of the initial design are discussed, and experimental data verifying performance are presented.

Kathman, Alan D.↗

NASA NTRS1999

Modeling the Freezing of SN in High Temperature Furnaces

Presently, crystal growth furnaces are being designed that will be used to monitor the crystal melt interface shape and the solutal and thermal fields in its vicinity during the directional freezing of dilute binary alloys, To monitor the thermal field within the solidifying materials, thermocouple arrays (AMITA) are inserted into the sample. Intrusive thermocouple monitoring devices can affect the experimental data being measured. Therefore, one objective of this work is to minimize the effect of the thermocouples on the data generated. To aid in accomplishing this objective, two models of solidification have been developed. Model A is a fully transient, one dimensional model for the freezing of a dilute binary alloy that is used to compute temperature profiles for comparison with measurements taken from the thermocouples. Model B is a fully transient two dimensional model of the solidification of a pure metal. It will be used to uncover the manner in which thermocouple placement and orientation within the ampoule breaks the longitudinal axis of symmetry of the thermal field and the crystal-melt interface. Results and conclusions are based on the comparison of the models with experimental results taken during the freezing of pure Sn.

Brush, Lucien↗

DOE OSTI2022

GAAF: Searching Activation Functions for Binary Neural Networks Through Genetic Algorithm

Binary neural networks (BNNs) show promising utilization in cost and power-restricted domains such as edge devices and mobile systems. This is due to its significantly less computation and storage demand, but at the cost of degraded performance. To close the accuracy gap, in this paper we propose to add a complementary activation function (AF) ahead of the sign based binarization, and rely on the genetic algorithm (GA) to automatically search for the ideal AFs. These AFs can help extract extra information from the input data in the forward pass, while allowing improved gradient approximation in the backward pass. Fifteen novel AFs are identified through our GA-based search, while most of them show improved performance (up to 2.54% on ImageNet) when testing on different datasets and network models. Interestingly, periodic functions are identified as a key component for most of the discovered AFs, which rarely exist in human designed AFs. Our method offers a novel approach for designing general and application-specific BNN architecture.

59 BASIC BIOLOGICAL SCIENCES↗

NASA NTRS1996

Multimode Data-Compression System

Data-compression system developed to satisfy need for high-speed, high-performance compression of data from sources as diverse as medical images, high-definition television images, audio signals, readouts from scientific instruments, and binary data files. Maximum data-transmission capability of communication channel or storage capacity of storage device multiplied by approximately compression ratio. Various combinations of lossless and lossy compression chosen to suit various data streams.

Fang, Wai-Chi↗

NASA NTRS2002

Field-Programmable Gate Array Computer in Structural Analysis: An Initial Exploration

This paper reports on an initial assessment of using a Field-Programmable Gate Array (FPGA) computational device as a new tool for solving structural mechanics problems. A FPGA is an assemblage of binary gates arranged in logical blocks that are interconnected via software in a manner dependent on the algorithm being implemented and can be reprogrammed thousands of times per second. In effect, this creates a computer specialized for the problem that automatically exploits all the potential for parallel computing intrinsic in an algorithm. This inherent parallelism is the most important feature of the FPGA computational environment. It is therefore important that if a problem offers a choice of different solution algorithms, an algorithm of a higher degree of inherent parallelism should be selected. It is found that in structural analysis, an 'analog computer' style of programming, which solves problems by direct simulation of the terms in the governing differential equations, yields a more favorable solution algorithm than current solution methods. This style of programming is facilitated by a 'drag-and-drop' graphic programming language that is supplied with the particular type of FPGA computer reported in this paper. Simple examples in structural dynamics and statics illustrate the solution approach used. The FPGA system also allows linear scalability in computing capability. As the problem grows, the number of FPGA chips can be increased with no loss of computing efficiency due to data flow or algorithmic latency that occurs when a single problem is distributed among many conventional processors that operate in parallel. This initial assessment finds the FPGA hardware and software to be in their infancy in regard to the user conveniences; however, they have enormous potential for shrinking the elapsed time of structural analysis solutions if programmed with algorithms that exhibit inherent parallelism and linear scalability. This potential warrants further development of FPGA-tailored algorithms for structural analysis.

Singleterry, Robert C., Jr.↗

DOE OSTI2023

Hybrid stochastic synapses enabled by scaled ferroelectric field-effect transistors

Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling nanodevices results in reduction of programming resolution and emergence of stochastic non-idealities. While prior work has mainly focused on binary transitions, in this work, we leverage the stochastic switching of a three-state ferroelectric field-effect transistor to implement a long-term and short-term two-tier stochastic synaptic memory with a single device. Experimental measurements are performed on a scaled 28 nm high-k metal gate technology-based device to develop a probabilistic model of the hybrid stochastic synapse. In addition to the advantage of ultra-low programming energies afforded by scaling, our hardware–algorithm co-design analysis reveals the efficacy of the two-tier memory in comparison to binary stochastic synapses in on-chip learning tasks—paving the way for algorithms exploiting multi-state devices with probabilistic transitions beyond deterministic ones.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

NASA NTRS2023

Optical Characteristics of Radiated Multifunctional Optical Materials

The performance of optical and electronic materials, and devices are affected significantly in space due to exposure from high energy radiations. We have been investigating the effect of -ray radiations on multifunctional binary and ternary selenide and halide crystals. These materials have shown excellent performance for the wavelength conversion in MWIR and LWIR regions, acousto-optics, and great potential for radiation detection. Crystals with high Z materials such as thallium, mercury and lead based compounds have great potential for the development of a variety of devices and components suitable for space applications. We will report on the characteristics of several halides including mercurous halides (Hg2X2, X= Cl, Br, I), Thallium mercury iodide (Tl4HgI4) and thallium arsenic selenide and thallium gallium selenide, and ternary selenides. These crystals, synthesized with high purity source materials, will be evaluated by studying optical characteristics and measuring resistivity after exposure to a 137Cs -ray source.

Radiation↗

DOE OSTI2023

Quantitative relationships between film morphology, charge carrier dynamics, and photovoltaic performance in bulk-heterojunction binary vs. ternary acceptor blends

Addressing pertinent and perplexing questions regarding why nonfullerene acceptors (NFAs) promote higher power conversion efficiencies (PCEs) than traditional fullerenes and how photoactive bulk heterojunction (BHJ) film morphology, charge photogeneration, and recombination dynamics dictate solar cell performance have stimulated many studies of polymer solar cells (PSCs), yet quantitative relationships remain limited. Better understanding in these areas offers the potential to advance materials design and device engineering, afford higher PCEs, and ultimate commercialization. Here we probe quantitative relationships between BHJ film morphology, charge carrier dynamics, and photovoltaic performance in model binary and ternary blend systems having a wide bandgap donor polymer, a fullerene, and a promising NFA. We show that optimal PC 71 BM incorporation in a PBDB-TF:ITIC-Th binary system matrix retains the original π-face-on orientation, ITIC-Th crystallinity and BHJ film crystallite dimensions, and reduces film upper surface ITIC-Th segregation. Such morphology changes together simultaneously increase hole (μ h ) and electron (μ e ) mobilities, facilitate light-activated ITIC-Th to PC 71 BM domain electron delocalization, reduce free charge carrier (FC) bimolecular recombination (BR) within PBDB-TF:ITIC-Th mixed regions, and increase FC extraction pathways viaPBDB-TF:PC 71 BM pairs. The interplay of these effects yields significantly enhanced inverted cell short-circuit current density (J SC ), fill factor (FF), and PCE. Unexpectedly, we also find that excessive PC 71 BM in the PBDB-TF:ITIC-Th binary system alters the PBDB-TF orientation to π-edge-on, increases large scale PC 71 BM-rich aggregations and BHJ upper surface PC 71 BM composition. Further, these morphology changes increase parasitic decay processes such as intersystem crossing from photoexcited PC 71 BM, compromising the J SC , FF, and PCE metrics. ITIC-Th X-ray diffraction reveals a unique sidechain-dominated molecular network with previously unknown sidechain-end group stacking, rationalizing the STEM and GIWAXS results, photophysics, and the high μ e . DFT computation reveals charge transfer networks within ITIC-Th crystallites, supporting excited-state electron delocalization from ITIC-Th to PC 71 BM. This structure–property understanding leads to a newly reported NFA blend with PCE near 17%.

14 SOLAR ENERGY↗

NASA NTRS1970

Digital input is buffered to real-time analog display

Buffering technique utilizes nine-bit binary counter and holding register of eight flip-flops. These flip-flops form the memory device that allows precise asynchronous conversion of the digital source data. Counter generates a waveform which is passed through a low pass filter to recover data in analog form.

Bower, K. F.↗

NASA NTRS1993

Massively parallel neurocomputing for aerospace applications

An innovative hybrid, analog-digital charge-domain technology, for the massively parallel VLSI implementation of certain large scale matrix-vector operations, has recently been introduced. It employs arrays of Charge Coupled/Charge Injection Device cells holding an analog matrix of charge, which process digital vectors in parallel by means of binary, non-destructive charge transfer operations. The impact of this technology on massively parallel processing is discussed. Fundamentally new classes of algorithms, specifically designed for this emerging technology, as applied to signal processing, are derived.

Fijany, Amir↗

NASA NTRS1993

Massively Parallel Neurocomputing for Aerospace Applications

massively↗

NASA NTRS2021

Probabilistic Processing of Asynchronous Geiger-Mode Avalanche Photodiode Arrays for Background Rate Measurements

A system-level performance evaluation of Geiger-mode avalanche photodiode (GmAPD) arrays requires accurate measurement and prediction of the background rate of the device due to dark counts and other spurious detection events. Since a GmAPD detector reports only a binary value and timestamp associated with an avalanche event, dark count rates are typically measured by averaging thousands of frames to support a statistically significant measurement. For both synchronous and asynchronous detector, the Poisson distributed background rates are referenced to the time each pixel is armed. Unlike for synchronous GmAPD imagers where all the pixels are armed to an array-wide arm signal, an asynchronous pixel operates independently from its neighboring pixels; requiring the background rates to be calculated using an interarrival histogram. For both types of imagers, the background rate is typically evaluated by fitting an exponential distribution to a fixed window within a measured histogram of time intervals between detection events However, if the statistics of the background rate are insufficient – whether that is due to low population sizes, saturation, or a large dynamic range of population size across the array, the pixel, or array-wide, performance metrics may report results with varying accuracy. This paper reports on an implementation of an algorithm that evaluates GmAPD background rates based on statistical metrics rather than fixed windows. The algorithm functions by determining the appropriate integration window within the interarrival time histogram based on a per-pixel count rate set by a predetermined tolerable measurement error. The implementation of the algorithm allows us to characterize GmAPD arrays with orders of magnitude spread in background rates across the detector using common statistical parameters.

Mumolo, J.↗

NASA NTRS1993

Fabrication of micro-optical devices

We have fabricated a variety of micro-optic components including Fresnel and non-Frensel lenses, off-axis and dispersive lenses with binary stepped contours, and analog contours. Process details for all lens designs fabricated are given including multistep photolithography for binary fabrication and grayscale mask photolithography for analog fabrication. Reactive ion etching and ion beam milling are described for the binary fabrication process, while ion beam milling was used for the analog fabrication process. Examples of micro-optic components fabricated in both Si and CdTe substrates are given.

Anderson, W. W.↗

NASA NTRS1975

Modulator for tone and binary signals

Tones and binary information are transmitted as phase variations on a carrier wave of constant amplitude and frequency. The carrier and tones are applied to a balanced modulator for deriving an output signal including a pair of sidebands relative to the carrier. The carrier is phase modulated by a digital signal so that it is + or - 90 deg out of phase with the predetermined phase of the carrier. The carrier is combined in an algebraic summing device with the phase modulated signal and the balanced modulator output signal. The output of the algebraic summing device is hard limited to derive a constant amplitude and frequency signal having very narrow bandwidth requirements. At a receiver, the tones and binary data are detected with a phase locked loop having a voltage controlled oscillator driving a pair of orthogonal detection channels.

Mcchesney, J. R.↗