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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

High Efficiency 6-Junction Solar Cells for the Global and Direct Spectra

We show 6-junction inverted metamorphic solar cells with high efficiencies under both the global and direct spectrum, and discuss improvements to device components. High voltage AlGaInP subcells are demonstrated on GaAs substrates miscut 2° towards (111)B by using Sb surfactant to reduce atomic ordering. This miscut enables high voltage and low dislocation density GaInAs subcells by using atomically-ordered GaInP-based graded buffers. One-sun efficiencies of 39.2 ± 1.3% under the global spectrum and 39.4 ± 1.1% direct spectrum have been demonstrated by using these high voltage subcell components. For high efficiency under the concentrated direct spectrum, low resistance is also necessary, which requires a challenging and nonintuitive optimization of tunnel junctions and heterobarriers. Increasing the thickness of a (Al)GaInAs spacer layer between the back surface fields (BSF) and tunnel junctions (TJ) of latticemismatched subcells reduces nonlinear resistance, which implies a detrimental interaction between the BSF and TJ. Concentrator devices with optimized spacer layers show reduced effective resistance and maintain fill factor > 75% at 1100 suns. Device efficiencies under the concentrated direct spectrum peak at 47.1 ± 3.2% at 143 suns.

41 EE - Solar Energy Technologies Office (EE-4S)↗
NASA NTRS1994

Control of an Axisymmetric Jet Using Vortex Generators

The results of an experimental investigation on the effect of vortex generators, in the form of small tabs at the nozzle exit on the evolution of a jet, are reported in this paper. Primarily tabs of triangular shape are considered, and the effect is studied up to a jet Mach number of 1.8. Each tab is found to produce a dominant pair of counter-rotating streamwise vortices having a sense of rotation opposite to that expected from the wrapping of the boundary layer. This results in an inward indentation of the mixing layer into the core of the jet. A triangular-shaped tab with its apex leaning downstream, referred to as a delta tab, is found to be the most effective in producing such vortices, with a consequential large influence on the overall jet evolution. Two delta tabs, spaced 180 deg apart, completely bifurcate the jet. Four delta tabs stretch the mixing layer into four 'fingers,' resulting in a significant increase in the jet mixing downstream. For six delta tabs the mixing layer distortion settles back to a three finger configuration through an interaction of the streamwise vortices. The tabs are found to be equally effective in jets with turbulent or laminar initial boundary layers. Two sources of streamwise vorticity are postulated for the flow under consideration. One is the upstream 'pressure hill,' generated by the tab, which constitutes the main contributor of vorticity to the dominant pair. Another is due to vortex filaments shed from the sides of the tab and reoriented downstream by the mean shear of the mixing layer. Depending on the orientation of the tab, the latter source can produce a vortex pair having a sense of rotation opposite to that of the dominant pair. In the case of the delta tab, vorticity from the two sources add, explaining the strong effect in that configuration.

Zaman, K. B. M. Q.↗
DOE OSTI2019

“Top-Down” Li Deposition Pathway Enabled by an Asymmetric Design for Li Composite Electrode

Designing Li composite electrodes with host frameworks for accommodating Li metal has been considered to be an effective approach to suppress Li dendrites. Herein, an asymmetric design of a Mo net/Li metal film (MLF) composite electrode is developed by an inverted thermal infusion method. The asymmetric MLF electrode has a dense oxide passivated layer on the top side, a porous Mo net matrix on the back side, and active Li layer in between. The back side has a larger specific area and higher electric field than the top side, which contacts with the separator upon cycling, triggering the preferred Li deposition and stripping of the porous back side of the electrode far from the separator. The surface passivation layer on the top side of the electrode as an artificial solid electrolyte interphase ensures the stable contact with the electrolyte and separator. Meanwhile, the porous structure of the supporting Mo net provides enough space for accommodating the volume change during Li deposition and stripping. This asymmetry design enables a unique “top down” growth pathway for Li deposition in the MLF electrode, suppressing the dendrite growth effectively. In conclusion, the design strategy provides a new direction for high-energy dendrite-free Li metal anodes.

25 ENERGY STORAGE↗
NASA NTRS1969

Cathodochromic storage device

A memory and display device has been developed by combing a fast phosphor layer with a cathodochromic layer in a cathode ray tube. Images are stored as patterns of electron beam induced optical density in the cathodo-chromic material. The stored information is recovered by exciting the backing, fast phosphor layer with a constant current electron beam and detecting the emitted radiation which is modulated by absorption in the cathodochromic layer. The storage can be accomplished in one or more TV frames (1/30 sec each). More than 500 TV line resolution and close to 2:1 contrast ratio are possible. The information storage time in a dark environment is approximately 24 hours. A reconstituted (readout) electronic video signal can be generated continuously for times in excess of 10 minutes or periodically for several hours.

Bosomworth, D. R.↗
DOE OSTI2017

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

We analyze the temperature-dependent dark saturation current density and open-circuit voltage (VOC) for GaAs, GaInP, and AlGaInP solar cells from 25 to 400 degrees C. As expected, the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents. However, at 400 degrees C, we measure VOC that is ~50 mV higher for the GaAs solar cell and ~60-110 mV lower for the GaInP and AlGaInP solar cells compared to what would be expected from commonly used solar cell models that consider only the ni2 temperature dependence. To better understand these deviations, we measure the carrier lifetimes of p-type GaAs, GaInP, and AlGaInP double heterostructures (DHs) from 25 to 400 degrees C using time-resolved photoluminescence. Temperature-dependent minority carrier lifetimes are analyzed to determine the relative contributions of the radiative recombination, interface recombination, Shockley-Read-Hall recombination, and thermionic emission processes. We find that radiative recombination dominates for the GaAs DHs with the effective lifetime approximately doubling as the temperature is increased from 25 degrees C to 400 degrees C. In contrast, we find that thermionic emission dominates for the GaInP and AlGaInP DHs at elevated temperatures, leading to a 3-4x reduction in the effective lifetime and ~40x increase in the surface recombination velocity as the temperature is increased from 25 degrees C to 400 degrees C. These observations suggest that optimization of the minority carrier confinement layers for the GaInP and AlGaInP solar cells could help to improve VOC and solar cell efficiency at elevated temperatures. We demonstrate VOC improvement at 200-400 degrees C in GaInP solar cells fabricated with modified AlGaInP window and back surface field layers.

14 SOLAR ENERGY↗
DOE OSTI2020

Rapid Patterning and Advanced Device Structures for Low Cost Manufacturable Crystalline Si IBC Cells

Recent record efficiency Si cells have had an interdigitated back contact (IBC) design where both positive and negative contacts are fabricated on the back side of the Si wafer. Many industry groups have investigated IBC cells but used photolithography to pattern the rear contacts although it is considered impractical for low cost, high volume manufacturing. Alternative patterning methods using lasers and mechanical masking have been utilized in fabrication of patterned regions in IBC Si solar cells to replace photolithography. Another exciting advance in Si solar cell technology has been replacing the high temperature diffusion of doped regions inside the crystalline Si wafer with low temperature deposition of very thin layers of doped amorphous hydrogenated Si (a-Si:H) on the Si wafer. This is called a Si heterojunction (HJ) device. The a-Si:H provides excellent passivation of surface defects and has produced the highest open circuit voltages (VOC) of any Si solar cell device structure. The Institute of Energy Conversion (IEC) demonstrated the first IBC-HJ solar cell combining these two strategies in 2007 and has fabricated IBC-HJ cells with 20% efficiency using three photolithography steps. Despite the demonstrated efficiency potential of this device by industry groups (>26%) there is no commercial production because of the challenges of patterning and processing the structure in an industrial environment. Our work sought to address that challenge. The objective of this 3 year project was to develop the processing for the IBC-HJ Si solar cell using lasers for patterning and contact formation instead of photolithography. Laser patterning enables rapid, contactless manufacturing of patterned regions. We intensively studied laser fired contacts, laser patterning of the a-Si multi-layer stacks and metal layers and the use of plasma shadow masks. After an exhaustive focus in the first year on the laser fired emitter (LFE) and contact (LFC), we were unable to achieve VOC greater than 660 mV, compared to the 720 mV required to meet our milestones. We discovered that an additional issue with our original IBC structure was the presence of an inversion layer at the back surface connecting the p and n regions which reduced the VOC and fill factor (FF). We developed innovative methods for characterizing the inversion layer. These two limitations in the original design lead to development of a new IBC-HJ process sequence and device structure which we called Plasma Masked Laser Processed (PMLP). It retained the original high efficiency features including manufacturability. The LFC was replaced with a standard n-type a-Si HJ contact. The inversion layer was eliminated by replacing the previous p-type stack in the gap with an n-type or SiN stack. The PMLP used laser ablation of a multi-layer a-Si stack followed by chemical etching to open the n-contact. It required deposition of a patterned stack through a mask in the plasma deposition chamber. This turned out to be a source of significant problems due to inevitable unwanted deposition ‘leakage’ under the mask. This formed a blocking contact on the emitter which significantly reduced Voc and FF. Several iterations in PMLP device structure and chemical etching steps resulted in a large improvements, e.g. the efficiency increasing from 3 to 15% and Voc from 450 to 660 mV but they were unable to completely eliminate it. The best IBC-HJ device we fabricated had only 15% efficiency. For perspective, our standard FHJ devices had 20% efficiency.

14 SOLAR ENERGY↗
NASA NTRS1994

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Hoenk, Michael E.↗
NASA NTRS1975

Diffusion length measurement using the scanning electron microscope

The present work describes a measuring technique employing the scanning electron microscope in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through application of highly doped surface field layers. The effects of high injection level and low-high junction current generation are investigated. Results obtained with this technique are compared to those obtained by a penetrating radiation (X-ray) method, and a close agreement is found. The SEM technique is limited to cells that contain a back surface field layer.

Weizer, V. G.↗
DOE OSTI2015

Functional integration of Ni–Mo electrocatalysts with Si microwire array photocathodes to simultaneously achieve high fill factors and light-limited photocurrent densities for solar-driven hydrogen evolution

An n + p-Si microwire array coupled with a two-layer catalyst film consisting of Ni–Mo nanopowder and TiO 2 light-scattering nanoparticles has been used to simultaneously achieve high fill factors and light-limited photocurrent densities from photocathodes that produce H 2 (g) directly from sunlight and water. The TiO 2 layer scattered light back into the Si microwire array, while optically obscuring the underlying Ni–Mo catalyst film. In turn, the Ni–Mo film had a mass loading sufficient to produce high catalytic activity, on a geometric area basis, for the hydrogen-evolution reaction. The best-performing microwire array devices prepared in this work exhibited short-circuit photocurrent densities of -14.3 mA cm -2 , photovoltages of 420 mV, and a fill factor of 0.48 under 1 Sun of simulated solar illumination, whereas the equivalent planar Ni–Mo-coated Si device, without TiO 2 scatterers, exhibited negligible photocurrent due to complete light blocking by the Ni–Mo catalyst layer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Embedding physics domain knowledge into a Bayesian network enables layer-by-layer process innovation for photovoltaics

Process optimization of photovoltaic devices is a time-intensive, trial-and-error endeavor, which lacks full transparency of the underlying physics and relies on user-imposed constraints that may or may not lead to a global optimum. Herein, we demonstrate that embedding physics domain knowledge into a Bayesian network enables an optimization approach for gallium arsenide (GaAs) solar cells that identifies the root cause(s) of underperformance with layer-by-layer resolution and reveals alternative optimal process windows beyond traditional black-box optimization. Our Bayesian network approach links a key GaAs process variable (growth temperature) to material descriptors (bulk and interface properties, e.g., bulk lifetime, doping, and surface recombination) and device performance parameters (e.g., cell efficiency). For this purpose, we combine a Bayesian inference framework with a neural network surrogate device-physics model that is 100× faster than numerical solvers. With the trained surrogate model and only a small number of experimental samples, our approach reduces significantly the time-consuming intervention and characterization required by the experimentalist. As a demonstration of our method, in only five metal organic chemical vapor depositions, we identify a superior growth temperature profile for the window, bulk, and back surface field layer of a GaAs solar cell, without any secondary measurements, and demonstrate a 6.5% relative AM1.5G efficiency improvement above traditional grid search methods.

14 SOLAR ENERGY↗
DOE OSTI2015

Simultaneous shunt protection and back contact formation for CdTe solar cells with single wall carbon nanotube layers

Thin film photovoltaic (PV) devices and modules prepared by commercial processes can be severely compromised by through-device low resistance electrical pathways. The defects can be due to thin or missing semiconductor material, metal diffusion along grain boundaries, or areas containing diodes with low turn-on potentials. We report the use of single wall carbon nanotube (SWCNT) layers to enable both protection against these defects and back contact formation for CdTe PV devices. Samples prepared with a SWCNT back contact exhibited good efficiency and did not require shunt protection, while devices prepared without shunt protection using a standard metal back contact performed poorly. We describe the mechanism by which the SWCNT layer functions. In addition to avoiding the need for shunt protection by other means, the SWCNT film also provides a route to higher short circuit currents.

14 SOLAR ENERGY↗
DOE OSTI2024

Shock-driven three-fluid mixing with various chevron interface configurations

When a shock wave crosses a density interface, the Richtmyer–Meshkov instability causes perturbations to grow. Richtmyer–Meshkov instabilities arise from the deposition of vorticity from the misaligned density and pressure gradients at the shock front. In many engineering applications, microscopic surface roughness will grow into multi-mode perturbations, inducing mixing between the fluid on either side of an initial interface. Applications often have multiple interfaces, some of which are close enough to interact in the later stages of instability growth. In this study, we numerically investigate the mixing of a three-layer system with periodic zigzag (or chevron) interfaces, calculating the dependence of the width and mass of mixed material on properties such as the shock timing, chevron amplitude, multi-mode perturbation spectrum, density ratio, and shock mach number. The multi-mode case is also compared with a single-mode perturbation. The Flash hydrodynamic code is used to solve the Euler equations in three dimensions with adaptive grid refinement. Key results include a significant increase in mixed mass when changing from a single-mode to a multi-mode perturbation on one of the interfaces. The mixed width is mainly sensitive to the density ratio and chevron amplitude, whereas the mixed mass also depends on the multi-mode spectrum. In conclusion, steeper initial perturbation spectra have lower mixed mass at early times but a greater mixed mass after the reflected shock transits back across the layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Topography, complex refractive index, and conductivity of graphene layers measured by correlation of optical interference contrast, atomic force, and back scattered electron microscopy

The optical phase shift by reflection on graphene is measured by interference contrast microscopy. The height profile across graphene layers on 300 nm thick SiO{sub 2} on silicon is derived from the phase profile. The complex refractive index and conductivity of graphene layers on silicon with 2 nm thin SiO{sub 2} are evaluated from a phase profile, while the height profile of the layers is measured by atomic force microscopy. It is observed that the conductivity measured on thin SiO{sub 2} is significantly greater than on thick SiO{sub 2}. Back scattered electron contrast of graphene layers is correlated to the height of graphene layers.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells

Electronic properties of a CdTe solar cell are reported using temperature-dependent capacitance spectroscopy and current-voltage characteristics, the latter in dark and illuminated conditions. The baseline solar cell material stack investigated is comprised of soda-lime-glass/SnO 2 :F/SnO 2 /CdS:O-buffer/CdTe-absorber/Cu/Au. Properties are compared with CdTe solar cells in which the back surface was hydroiodic acid etched, before the back-contact formation, and a CdTe device in which Mg-doped ZnO (MZO) replaces buffer layer CdS. Reduced back-contact barrier height and grain boundary barrier height are observed in the HI treated CdTe cell. As a result, improved device performance in the MZO-based CdTe device is attributed to reduced emitter/absorber interface recombination when using the MZO window layer.

14 SOLAR ENERGY↗
DOE OSTI2018

Reversible Flat to Rippling Phase Transition in Fe Containing Layered Battery Electrode Materials

Layered sodium transition metal oxides of NaTMO 2 (TM = 3d transition metal) show unique capability to mix different compositions of Fe to the TM layer, a phenomenon that does not exist in LiTMO 2 . Here we report a novel spontaneous TM layer rippling in the sodium ion battery cathode materials, revealed by in-situ X-ray diffraction, Cs-corrected scanning transmission electron microscopy and density functional theory simulation, where the softening and distortion of FeO 6 octahedra collectively drives the flat TM planes into rippled ones with inhomogeneous interlayer distance at high voltage. In such a rippling phase, charge and discharge of Na ions take different evolution pathways, resulting in an unusual hysteresis voltage loop. Importantly, upon discharge beyond a certain Na composition, the rippling TM layer will go back to flat, giving the reversibility of such structural evolution in the following cycles.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2023

Beneficial Effects of La 0.5 Sr 0.5 CoO 3 Coatings on Thin‐Film LiMn 2 O 4 Cathodes for Lithium Ion Batteries

Abstract The severe capacity loss of spinel LiMn 2 O 4 (LMO) limits the utility of this otherwise promising lithium ion battery cathode material. One of the strategies to mitigate capacity fade is applying a coating on LMO particle surfaces. While this approach yields promising results, there is limited understanding of mechanisms whereby coatings improve LMO capacity retention. Herein, the effects of a new protective coating material, La 0.5 Sr 0.5 CoO 3 (LSCO), in a thin‐film battery geometry that is amenable to fundamental studies of electrode processes, are reported. RF sputtering deposition is used to produce high quality 25–100 nm LMO cathodes on Al 2 O 3 substrates with an intervening Pt/Ti back‐side contact layer. Cycling of the un‐coated cathodes results in capacity loss of 18% over 300 cycles. Adding a 2 nm LSCO layer reduces the capacity loss to 3%. While this may be due in part to reduced Mn dissolution, scanning transmission electron microscopy results indicate that the coating helps to preserve crystallinity and reduce lattice structure distortion due to inhibited formation of defect tetragonal spinel. Three‐electrode electrochemical impedance spectroscopy results reveal that the LSCO coating increases charge transfer and ohmic resistances, but the increases are generally too small to significantly impact cell performance even at high C‐rates.

25 ENERGY STORAGE↗
DOE OSTI2021

Understanding the Role of CdTe in Polycrystalline CdSe x Te 1– x /CdTe-Graded Bilayer Photovoltaic Devices

Grading of bandgap by alloying CdTe with selenium to form a CdSe x Te 1–x /CdTe-graded bilayer device has led to a device efficiency over 19%. A CdSe x Te 1–x absorber would increase the short-circuit current due to its lower bandgap but at the expense of open-circuit voltage. It has been demonstrated that adding a CdTe layer at the back of such a CdSe x Te 1–x film reduces the voltage deficit caused by the lower bandgap of absorber from selenium alloying while maintaining the higher short-circuit current. This leads to a photovoltaic device that draws advantage from both materials with an efficiency greater than either of them. In this report there is a detailed account using device data, ultraviolet photoelectron spectroscopy, electron microscopy, and first-principles density functional theory modeling is provided, which shows that CdTe acts as an electron reflector for CdSe x Te 1–x .

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2014

A Multi-Stage Wear Model for Grid-to-Rod Fretting of Nuclear Fuel Rods

The wear of fuel rod cladding against the supporting structures in the cores of pressurized water nuclear reactors (PWRs) is an important and potentially costly tribological issue. Grid-to-rod fretting (GTRF), as it is known, involves not only time-varying contact conditions, but also elevated temperatures, flowing hot water, aqueous tribo-corrosion, and the embrittling effects of neutron fluences. The multi-stage, closed-form analytical model described in this paper relies on published out-of-reactor wear and corrosion data and a set of simplifying assumptions to portray the conversion of frictional work into wear depth. The cladding material of interest is a zirconium-based alloy called Zircaloy-4, and the grid support is made of a harder and more wear-resistant material. Focus is on the wear of the cladding. The model involves an incubation stage, a surface oxide wear stage, and a base alloy wear stage. The wear coefficient, which is a measure of the efficiency of conversion of frictional work into wear damage, can change to reflect the evolving metallurgical condition of the alloy. Wear coefficients for Zircaloy-4 and for a polyphase zirconia layer were back-calculated for a range of times required to wear to a critical depth. Inputs for the model, like the friction coefficient, are taken from the tribology literature in lieu of in-reactor tribological data. Concepts of classical fretting were used as a basis, but are modified to enable the model to accommodate the complexities of the PWR environment. Factors like grid spring relaxation, pre-oxidation of the cladding, multiple oxide phases, gap formation, impact, and hydrogen embrittlement are part of the problem definition but uncertainties in their relative roles limits the ability to validate the model. Sample calculations of wear depth versus time in the cladding illustrate how GTRF wear might occur in a discontinuous fashion during months-long reactor operating cycles. A means to account for grid/rod gaps and repetitive impact effects on GTRF wear is proposed

fretting↗