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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Space solar cell technology development - A perspective

The developmental history of photovoltaics is examined as a basis for predicting further advances to the year 2000. Transistor technology was the precursor of solar cell development. Terrestrial cells were modified for space through changes in geometry and size, as well as the use of Ag-Ti contacts and manufacture of a p-type base. The violet cell was produced for Comsat, and involved shallow junctions, new contacts, and an enhanced antireflection coating for better radiation tolerance. The driving force was the desire by private companies to reduce cost and weight for commercial satellite power supplies. Liquid phase epitaxial (LPE) GaAs cells are the latest advancement, having a 4 sq cm area and increased efficiency. GaAs cells are expected to be flight ready in the 1980s. Testing is still necessary to verify production techniques and the resistance to electron and photon damage. Research will continue in CVD cell technology, new panel technology, and ultrathin Si cells.

Scott-Monck, J.↗
NASA NTRS1984

Solar-array-materials passive LDEF experiment (A0171)

The objective of this experiment is to evaluate the synergistic effects of the space environment on various solar-array materials, including solar cells, cover slips with various antireflectance coatings, adhesive, encapsulants, reflector materials, substrate strength materials, mast and harness materials, structural composites, and thermal control treatments. The experiment is passive and consists of an arrangement of material specimens mounted in a 3-in.-deep peripheral tray. The effects of the space environment on the specimens will be determined by comparison of preflight and postflight measurements of mechanical, electrical, and optical properties.

Whitaker, A. F.↗
NASA NTRS1984

18-percent efficient terrestrial silicon solar cells

Silicon solar cells are described which operate at energy conversion efficiencies in excess of 18 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are believed to be the most efficient silicon cells reported to date. The high efficiency is a result of the combination of high open-circuit voltage due to the careful attention paid to passivation of the top surface of the cell; high fill factors due to the high open-circuit voltage and low parasitic resistance losses; and high short-circuit current due to the use of shallow diffusions, a low grid coverage, and an optimized double-layer antireflection coating.

Blakers, A. W.↗
NASA NTRS1985

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Spitzer, M. B.↗
NASA NTRS1985

Assessing corrosion problems in photovoltaic cells via electrochemical stress testing

A series of accelerated electrochemical experiments to study the degradation properties of polyvinylbutyral-encapsulated silicon solar cells has been carried out. The cells' electrical performance with silk screen-silver and nickel-solder contacts was evaluated. The degradation mechanism was shown to be electrochemical corrosion of the cell contacts; metallization elements migrate into the encapsulating material, which acts as an ionic conducting medium. The corrosion products form a conductive path which results in a gradual loss of the insulation characteristics of the encapsulant. The precipitation of corrosion products in the encapsulant also contributes to its discoloration which in turn leads to a reduction in its transparency and the consequent optical loss. Delamination of the encapsulating layers could be attributed to electrochemical gas evolution reactions. The usefulness of the testing technique in qualitatively establishing a reliability difference between metallizations and antireflection coating types is demonstrated.

Shalaby, H.↗
NASA NTRS1984

High-efficiency silicon solar cells

Silicon solar cells are described which operate at energy conversion efficiencies independently measured at 18.7 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are apparently the most efficient silicon cells fabricated to date. The high-efficiency results from a combination of high open-circuit voltage due to the careful attention paid to the passivation of the top surface of the cell, high fill factor due to the high open-circuit voltage and low parasitic resistance losses, and high short-circuit current density due to the use of shallow diffusions, a low grid coverage, and an optimized double layer antireflection coating.

Green, M. A.↗
NASA NTRS1986

Effects of impurities on silicon solar-cell performance

Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

Hopkins, R. H.↗
NASA NTRS1986

Impurity effects in silicon for high efficiency solar cells

Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

Hopkins, R. H.↗
NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Work is reported aimed at identifying and reducing sources of carrier recombination both in the starting web silicon material and in the processed cells. Cross-sectional transmission electron microscopy measurements of several web cells were made and analyzed. The effect of the heavily twinned region on cell efficiency was modeled, and the modeling results compared to measured values for processed cells. The effects of low energy, high dose hydrogen ion implantation on cell efficiency and diffusion length were examined. Cells were fabricated from web silicon known to have a high diffusion length, with a new double layer antireflection coating being applied to these cells. A new contact system, to be used with oxide passivated cells and which greatly reduces the area of contact between metal and silicon, was designed. The application of DLTS measurements to beveled samples was further investigated.

Meier, D. L.↗
NASA NTRS1986

High-efficiency silicon solar cells - Development, current issues and future directions

This paper provides a review of material, process, and design considerations that are essential for achieving high-efficiency silicon solar cells. It describes an approach that resulted in 18.0-18.5-percent-efficient cells on low-resistivity float-zone silicon material. It is shown experimentally that a combination of surface passivation and double-layer antireflection coating can provide 2-3 percent (absolute) improvement in cell efficiency provided the material, process and cell design are carefully selected.

Rohatgi, A.↗
NASA NTRS1987

Dual laser diode array emission coherently summed in an external cavity

The output power from two ten-element laser diodes arrays has been efficiently summed in an external cavity to obtain a coherent, continuous wave beam. In this technique, laser emission from each front surface antireflection coated diode array is stimulated by injection of emission from a second such array. This method was also applied to single-element diode lasers. The output beam characteristics such as spectral distribution, far-field and near-field beam patterns, and overall efficiency have been measured.

Hemmati, Hamid↗
NASA NTRS1988

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing and MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reluctance of the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

Bailey, S. G.↗
NASA NTRS1990

Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

Ban, Vladimir S.↗
NASA NTRS1988

Responsivity of silicon photodiodes from 0.5 to 1.1 micron at 77 K

The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR Mapping Spectrometer (VIMS). Quantitative responsivity data for Si photodiodes in the band from 0.5 to 1.1 were needed for the VIMS system analysis. The results show that the Si array for the focal plane should have two different antireflection coatings. It is found that the Si and InSb materials have equivalent quantum efficiencies at about 0.9 microns. Because of unknown signal chain complications that could be caused by a multiplexer accessing two different capacitances, the focal plane was designed with a change from Si to InSb at 1 micron.

Staller, C.↗
NASA NTRS1988

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and incrased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n-epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing an MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reflectance of the microgrooved cell compared to the planar structure. The short-circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

Bailey, S. G.↗
NASA NTRS1990

Design of superlattice termination layers

Problems associated with quantum mechanical reflection of miniband carriers at the ends of superlattices are examined. Moebius transformations which map miniband Bloch wave reflectivity into plane wave reflectivity and vice versa are derived. These transformations facilitate the design of blocking and antiblocking layers which are analogous to reflective and antireflective coatings on optical elements. An example of termination layer design which is easy to implement is given. Applications include superlattice infrared detector design.

Coon, D. D.↗
NASA NTRS1991

InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed.

Wanlaas, M. W.↗
NASA NTRS1991

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Faur, Mircea↗