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At least 127 records · Page 7

AstroPix: A pixelated HVCMOS sensor for space-based gamma-ray measurement

A next-generation medium-energy gamma-ray telescope targeting the MeV range would address open questions in astrophysics regarding how extreme conditions accelerate cosmic-ray particles, produce relativistic jet outflows, and more. One concept, AMEGO-X, relies upon the mission-enabling CMOS Monolithic Active Pixel Sensor silicon chip AstroPix. AstroPix is designed for space-based use, featuring low noise, low power consumption, and high scalability. Desired performance of the device include an energy resolution of 5 keV (or 10% FWHM) at 122 keV and a dynamic range per-pixel of 25–700 keV, enabled by the addition of a high-voltage bias to each pixel which supports a depletion depth of 500 μ m. This work reports on the status of the AstroPix development process with emphasis on the current version under test, version three (v3), and highlights of version two (v2). Version 3 achieves energy resolution of 10.4 ± 3.2% at 59.5 keV and 94 ± 6 μ m depletion in a low-resistivity test silicon substrate.

Astrophysics instrumentation↗

Smart-Pixel Array Processors Based on Optimal Cellular Neural Networks for Space Sensor Applications

A smart-pixel cellular neural network (CNN) with hardware annealing capability, digitally programmable synaptic weights, and multisensor parallel interface has been under development for advanced space sensor applications. The smart-pixel CNN architecture is a programmable multi-dimensional array of optoelectronic neurons which are locally connected with their local neurons and associated active-pixel sensors. Integration of the neuroprocessor in each processor node of a scalable multiprocessor system offers orders-of-magnitude computing performance enhancements for on-board real-time intelligent multisensor processing and control tasks of advanced small satellites. The smart-pixel CNN operation theory, architecture, design and implementation, and system applications are investigated in detail. The VLSI (Very Large Scale Integration) implementation feasibility was illustrated by a prototype smart-pixel 5x5 neuroprocessor array chip of active dimensions 1380 micron x 746 micron in a 2-micron CMOS technology.

Fang, Wai-Chi↗

Chromatic Modulator for High Resolution CCD or APS Devices

A system for providing high-resolution color separation in electronic imaging. Comb drives controllably oscillate a red-green-blue (RGB) color strip filter system (or otherwise) over an electronic imaging system such as a charge-coupled device (CCD) or active pixel sensor (APS). The color filter is modulated over the imaging array at a rate three or more times the frame rate of the imaging array. In so doing, the underlying active imaging elements are then able to detect separate color-separated images, which are then combined to provide a color-accurate frame which is then recorded as the representation of the recorded image. High pixel resolution is maintained. Registration is obtained between the color strip filter and the underlying imaging array through the use of electrostatic comb drives in conjunction with a spring suspension system.

Frank T Hartley↗

Development of selenium imaging detectors toward a definitive search for neutrinoless ββ decay

Imaging sensors made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The high spatial resolution in a solid-state target provides unparalleled rejection of backgrounds from natural radioactivity in the search for the neutrinoless ββ decay of 82 Se. With this grant, we experimentally determined two crucial factors necessary for the realization of this novel technology: i) the intrinsic energy response of aSe to ionizing electrons, and ii) the feasibility to couple a target layer of aSe to a CMOS active pixel sensor to image electron tracks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Image Sensors Enhance Camera Technologies

In the 1990s, a Jet Propulsion Laboratory team led by Eric Fossum researched ways of improving complementary metal-oxide semiconductor (CMOS) image sensors in order to miniaturize cameras on spacecraft while maintaining scientific image quality. Fossum s team founded a company to commercialize the resulting CMOS active pixel sensor. Now called the Aptina Imaging Corporation, based in San Jose, California, the company has shipped over 1 billion sensors for use in applications such as digital cameras, camera phones, Web cameras, and automotive cameras. Today, one of every three cell phone cameras on the planet feature Aptina s sensor technology.

Source record↗

Development of CMOS Sensors for HEP with a US-based foundry

We will present a program to establish the first development and manufacturing of HEP-specific sensors monolithically integrated into a standard CMOS process using a US-based foundry. In collaboration with several US universities the project aims to develop Monolithic Active Pixel Sensors (MAPS) designs implemented in the 90 nm technology node, including simple test structures and multi-pixel arrays, and monolithic CMOS sensors with readout integrated circuits, perform detailed characterization of the detector prototypes and quantify their performance for HEP applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Impact of front-end parameters of the ARCADIA MD3 on charged particle detection

The ARCADIA INFN R&D project developed a Fully Depleted Monolithic Active Pixel Sensor (FD-MAPS) using a customized LFoundry 110 nm CIS process. The first in-beam characterization of the ARCADIA Main Demonstrator 3 (MD3) sensor with 200 $μ$m active thickness has been performed at the Fermilab Test Beam Facility with a 120 GeV proton beam. The Device Under Test (DUT) is tested with a trigger-less telescope composed of two ARCADIA MD3 tracking planes. This early study investigates the effect of the front-end parameters on the tracking performance.

Pantouvakis, C. [Padua U.; INFN, Padua]↗

Hemispherical Field-of-View Above-Water Surface Imager for Submarines

A document discusses solutions to the problem of submarines having to rise above water to detect airplanes in the general vicinity. Two solutions are provided, in which a sensor is located just under the water surface, and at a few to tens of meter depth under the water surface. The first option is a Fish Eye Lens (FEL) digital-camera combination, situated just under the water surface that will have near-full- hemisphere (360 azimuth and 90 elevation) field of view for detecting objects on the water surface. This sensor can provide a three-dimensional picture of the airspace both in the marine and in the land environment. The FEL is coupled to a camera and can continuously look at the entire sky above it. The camera can have an Active Pixel Sensor (APS) focal plane array that allows logic circuitry to be built directly in the sensor. The logic circuitry allows data processing to occur on the sensor head without the need for any other external electronics. In the second option, a single-photon sensitive (photon counting) detector-array is used at depth, without the need for any optics in front of it, since at this location, optical signals are scattered and arrive at a wide (tens of degrees) range of angles. Beam scattering through clouds and seawater effectively negates optical imaging at depths below a few meters under cloudy or turbulent conditions. Under those conditions, maximum collection efficiency can be achieved by using a non-imaging photon-counting detector behind narrowband filters. In either case, signals from these sensors may be fused and correlated or decorrelated with other sensor data to get an accurate picture of the object(s) above the submarine. These devices can complement traditional submarine periscopes that have a limited field of view in the elevation direction. Also, these techniques circumvent the need for exposing the entire submarine or its periscopes to the outside environment.

Hemmati, Hamid↗

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e – to 386 e – and from 75 e – to 277 e – for the corresponding pixels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Compact Optoelectronic Compass

A compact optoelectronic sensor unit measures the apparent motion of the Sun across the sky. The data acquired by this chip are processed in an external processor to estimate the relative orientation of the axis of rotation of the Earth. Hence, the combination of this chip and the external processor finds the direction of true North relative to the chip: in other words, the combination acts as a solar compass. If the compass is further combined with a clock, then the combination can be used to establish a threeaxis inertial coordinate system. If, in addition, an auxiliary sensor measures the local vertical direction, then the resulting system can determine the geographic position. This chip and the software used in the processor are based mostly on the same design and operation as those of the unit described in Micro Sun Sensor for Spacecraft (NPO-30867) elsewhere in this issue of NASA Tech Briefs. Like the unit described in that article, this unit includes a small multiple-pinhole camera comprising a micromachined mask containing a rectangular array of microscopic pinholes mounted a short distance in front of an image detector of the active-pixel sensor (APS) type (see figure). Further as in the other unit, the digitized output of the APS in this chip is processed to compute the centroids of the pinhole Sun images on the APS. Then the direction to the Sun, relative to the compass chip, is computed from the positions of the centroids (just like a sundial). In the operation of this chip, one is interested not only in the instantaneous direction to the Sun but also in the apparent path traced out by the direction to the Sun as a result of rotation of the Earth during an observation interval (during which the Sun sensor must remain stationary with respect to the Earth). The apparent path of the Sun across the sky is projected on a sphere. The axis of rotation of the Earth lies at the center of the projected circle on the sphere surface. Hence, true North (not magnetic North), relative to the chip, can be estimated from paths of the Sun images across the APS. In a test, this solar compass has been found to yield a coarse estimate of the North (within tens of degrees) in an observation time of about ten minutes. As expected, the accuracy was found to increase with observation time: after a few hours, the estimated direction of the rotation axis becomes accurate to within a small fraction of a degree.

Christian, Carl↗

CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology

The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), with high-resolution time measurement capability. The technology chosen is a standard high voltage CMOS process, in conjunction with a high resistivity detector material, which has already proven to efficiently detect particles in tracking applications after several hundred of Mrad of irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Flight Qualified Micro Sun Sensor

A prototype small, lightweight micro Sun sensor (MSS) has been flight qualified as part of the attitude-determination system of a spacecraft or for Mars surface operations. The MSS has previously been reported at a very early stage of development in NASA Tech Briefs, Vol. 28, No. 1 (January 2004). An MSS is essentially a miniature multiple-pinhole electronic camera combined with digital processing electronics that functions analogously to a sundial. A micromachined mask containing a number of microscopic pinholes is mounted in front of an active-pixel sensor (APS). Electronic circuits for controlling the operation of the APS, readout from the pixel photodetectors, and analog-to-digital conversion are all integrated onto the same chip along with the APS. The digital processing includes computation of the centroids of the pinhole Sun images on the APS. The spacecraft computer has the task of converting the Sun centroids into Sun angles utilizing a calibration polynomial. The micromachined mask comprises a 500-micron-thick silicon wafer, onto which is deposited a 57-nm-thick chromium adhesion- promotion layer followed by a 200-nm-thick gold light-absorption layer. The pinholes, 50 microns in diameter, are formed in the gold layer by photolithography. The chromium layer is thin enough to be penetrable by an amount of Sunlight adequate to form measurable pinhole images. A spacer frame between the mask and the APS maintains a gap of .1 mm between the pinhole plane and the photodetector plane of the APS. To minimize data volume, mass, and power consumption, the digital processing of the APS readouts takes place in a single field-programmable gate array (FPGA). The particular FPGA is a radiation- tolerant unit that contains .32,000 gates. No external memory is used so the FPGA calculates the centroids in real time as pixels are read off the APS with minimal internal memory. To enable the MSS to fit into a small package, the APS, the FPGA, and other components are mounted on a single two-sided board following chip-on-board design practices

Liebe, Carl Christian↗

Micro Sun Sensor for Spacecraft

A report describes the development of a compact micro Sun sensor for use as a part of the attitude determination subsystem aboard future miniature spacecraft and planetary robotic vehicles. The prototype unit has a mass of only 9 g, a volume of only 4.2 cm(sup 3), a power consumption of only 30 mW, and a 120 degree field of view. The unit has demonstrated an accuracy of 1 arcminute. The unit consists of a multiple pinhole camera: A micromachined mask containing a rectangular array of microscopic pinholes, machined utilizing the microectromechanical systems (MEMS), is mounted in front of an active-pixel sensor (APS) image detector. The APS consists of a 512 x 512-pixel array, on-chip 10-bit analog to digital converter (ADC), on-chip bias generation, and on-chip timing control for self-sequencing and easy programmability. The digitized output of the APS is processed to compute the centroids of the pinhole Sun images on the APS. The Sun angle, relative to a coordinate system fixed to the sensor unit, is then computed from the positions of the centroids.

Mobasser, Sohrab↗

Modeling Charge Collection in Detector Arrays

A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

Hardage, Donna↗

The STAR MAPS-based PiXeL detector

The PiXeL detector (PXL) for the Heavy Flavor Tracker (HFT) of the STAR experiment at RHIC is the first application of the state-of-the-art thin Monolithic Active Pixel Sensors (MAPS) technology in a collider environment. Here, custom built pixel sensors, their readout electronics and the detector mechanical structure are described in detail. Selected detector design aspects and production steps are presented. The detector operations during the three years of data taking (2014–2016) and the overall performance exceeding the design specifications are discussed in the conclusive sections of this work.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Advanced silicon tracking detector developments for the future Electron-Ion Collider

The proposed Electron-Ion Collider (EIC) will operate high-luminosity high-energy electron+proton and electron+nucleus collisions at the collision energies from 20 GeV to 141 GeV to solve several fundamental questions in the high energy and nuclear physics fields. Its instantaneous luminosity can reach 10 33-34 cm -2 s -1 and the bunching crossing rate is around 10 ns. The EIC project has received CD1 approval from the US DOE in 2021 and moves toward the machine design and preparation for construction. To realize various particle measurements with high precision at the future EIC, a low material-budget and high-granularity silicon vertex and tracking detector with fine spatial and momentum resolutions and nearly 4π solid angle coverage is desired. The Monolithic Active Pixel Sensor (MAPS) and AC Coupled Low Gain Avalanche Diode (AC-LGAD) technologies stand out of several advanced technology options for the EIC silicon vertex and tracking detector subsystems. The MAPS technology has advanced features of low material budget, low power consumption, good radiation resistance and fine spatial resolution. The AC-LGAD technology can achieve fast timing resolution. Latest studies and progress of the EIC silicon vertex and tracking detector conceptual design, performance validations in simulation and ongoing MAPS and AC-LGAD R&D will be shown. Furthermore, schedule and plan of the EIC project detector development will be discussed as well.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

The ladder and readout cables of intermediate silicon strip detector for sPHENIX

A new silicon-strip-type detector was developed for precise charged-particle tracking in the central rapidity region of heavy ion collisions. A new detector and collaboration at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory is sPHENIX, which is a major upgrade of the PHENIX detector. The intermediate tracker (INTT) is part of the advanced tracking system of the sPHENIX detector complex together with a CMOS monolithic-active-pixel-sensor based silicon-pixel vertex detector, a time-projection chamber, and a micromegas-based detector. The INTT detector is barrel shaped and comprises 56 silicon ladders. Two different types of strip sensors of 78 micron pitch and 320 micron thick are mounted on each half of a silicon ladder. Each strip sensor is segmented into 8 × 2 and 5 × 2 blocks with lengths of 16 and 20 mm. Strips are read out with a silicon strip-readout (FPHX) chip. In order to transmit massive data from the FPHX to the down stream readout electronics card (ROC), a series of long and high speed readout cables were developed. This document focuses on the silicon ladder, the readout cables, and the ROC of the INTT. The radiation hardness is studied for some parts of the INTT devices in the last part of this document, since the INTT employed some materials from the technology frontier of the industry whose radiation hardness is not necessarily well known.

43 PARTICLE ACCELERATORS↗

The 4D Camera: Very High Speed Electron Counting for 4D-STEM

A vast array of new experimental modalities have been enabled in the past several years through the development of pixelated detectors synchronized to probe scanning electronics. Such camera systems can then acquire the rich information present in the central portion of the convergent beam electron diffraction pattern as a function of probe position (4D-STEM). Here, we present the development, installation, and characterization of the 4D Camera, a CMOS Active Pixel Sensor that consists of a 576 x 576 array of 10 μm pixels of a design related to the original TEAM detector and an outer HAADF detector with 16 concentric quadrant diodes.

47 OTHER INSTRUMENTATION↗