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At least 127 records · Page 7

Electrical and thermal characteristics of LaB6 thermionic hollow cathodes operating in He, D2, Ar, and Xe at 4–200 Pa and 0.25–5 A cm−2

We report characteristics of lanthanum hexaboride (LaB6) cathodes for conditions relevant to a high-voltage, high-current switching device. LaB6 is selected because of its relatively low work function, stability in the presence of many common gas impurities, and a low evaporation rate (long life) at operating temperatures. We have investigated the effect of cathode geometry, gas type, pressure, and current on a LaB6 hollow cathode in a diode configuration with an opposing planar anode. The gas is stagnant at a relatively low pressure of 4–200 Pa (0.03–1.5 Torr) because of device high-voltage standoff requirements. In all cases, the plasma voltage decreases to a plateau value with increasing current where a practical device would operate. The plateau voltage aligns with the fill gas excitation or ionization voltage, depending on conditions. At high current, the cathode temperature exceeds that required for thermionic emission to supply the total current, a behavior that is understood by accounting for back-diffusing bulk electrons.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Two-neutrino double electron capture of 124 Xe in the first LUX-ZEPLIN exposure

The broad physics reach of the LUX-ZEPLIN (LZ) experiment covers rare phenomena beyond the direct detection of dark matter. We report precise measurements of the extremely rare decay of 124Xe through the process of two-neutrino double electron capture, utilizing a 1.39 kg × yr isotopic exposure from the first LZ science run. A half-life of $T$$^{2v2EC}_{1/2}$ = (1.09 ± 0.14 stat ± 0.05 sys ) x 10 22 yr is observed with a statistical significance of 8.3σ, in agreement with literature. First empirical measurements of the KK capture fraction relative to other K-shell modes were conducted, and demonstrate consistency with respect to recent signal models at the 1.4σ level.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Projected sensitivity of the LUX-ZEPLIN experiment to the $0\nu\beta\beta$ decay of $^{136}Xe$

The LUX-ZEPLIN (LZ) experiment will enable a neutrinoless double β decay search in parallel to the main science goal of discovering dark matter particle interactions. We report the expected LZ sensitivity to Xe136 neutrinoless double β decay, taking advantage of the significant (>600 kg) Xe136 mass contained within the active volume of LZ without isotopic enrichment. After 1000 live-days, the median exclusion sensitivity to the half-life of Xe136 is projected to be 1.06×1026 years (90% confidence level), similar to existing constraints. We also report the expected sensitivity of a possible subsequent dedicated exposure using 90% enrichment with Xe136 at 1.06×1027 years.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

R&D for LAr + Xe + photosensitive dopants

LArTPCs are the technology of choice for current and future neutrino experiments, including those expected to make eagerly awaited measurements of accelerator neutrino oscillations in the coming decade. This technology provides a large active volume and sensitivity to GeV signals like accelerator neutrinos all the way down to 10s of MeV, covering part of the supernova neutrino spectrum.Expanding the reach of LArTPCs to below the 10 MeV range would substantially enhance the flagship analyses of experiments like DUNE, while potentially enabling the physics of solar neutrinos, dark matter searches, and neutrinoless double beta decay searches.We outline the R&D pathway for photosensitive dopants, whose introduction into the LAr active medium, has the potential to substantially increase ionization yields of LAr detectors and enable the detection of low energy signals in large LArTPCs. This R&D program will demonstrate the feasibility and impacts of introducing doped LAr into current and future neutrino detectors at the kTon scale including the Xenon + photosensitive doping strategy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Materials Data on BaP2(XeF5)4 by Materials Project

BaP2(XeF5)4 crystallizes in the triclinic P-1 space group. The structure is two-dimensional and consists of two BaP2(XeF5)4 sheets oriented in the (0, 0, 1) direction. there are eight inequivalent Xe sites. In the first Xe site, Xe is bonded in a linear geometry to two F atoms. There are one shorter (2.07 Å) and one longer (2.09 Å) Xe–F bond lengths. In the second Xe site, Xe is bonded in a linear geometry to two F atoms. There are one shorter (2.07 Å) and one longer (2.08 Å) Xe–F bond lengths. In the third Xe site, Xe is bonded in a linear geometry to two F atoms. There are one shorter (2.07 Å) and one longer (2.08 Å) Xe–F bond lengths. In the fourth Xe site, Xe is bonded in a linear geometry to two F atoms. There are one shorter (2.06 Å) and one longer (2.10 Å) Xe–F bond lengths. In the fifth Xe site, Xe is bonded in a linear geometry to two F atoms. There are one shorter (2.06 Å) and one longer (2.11 Å) Xe–F bond lengths. In the sixth Xe site, Xe is bonded in a linear geometry to two F atoms. There are one shorter (2.07 Å) and one longer (2.09 Å) Xe–F bond lengths. In the seventh Xe site, Xe is bonded in a linear geometry to two F atoms. There are one shorter (2.07 Å) and one longer (2.08 Å) Xe–F bond lengths. In the eighth Xe site, Xe is bonded in a linear geometry to two F atoms. Both Xe–F bond lengths are 2.08 Å. There are two inequivalent Ba sites. In the first Ba site, Ba is bonded in a 10-coordinate geometry to ten F atoms. There are a spread of Ba–F bond distances ranging from 2.67–3.22 Å. In the second Ba site, Ba is bonded to twelve F atoms to form distorted BaF12 cuboctahedra that share a cornercorner with one PF6 octahedra and a faceface with one PF6 octahedra. The corner-sharing octahedral tilt angles are 22°. There are a spread of Ba–F bond distances ranging from 2.76–3.05 Å. There are four inequivalent P sites. In the first P site, P is bonded to six F atoms to form PF6 octahedra that share a cornercorner with one BaF12 cuboctahedra. There are a spread of P–F bond distances ranging from 1.62–1.67 Å. In the second P site, P is bonded to six F atoms to form PF6 octahedra that share a faceface with one BaF12 cuboctahedra. There are a spread of P–F bond distances ranging from 1.61–1.67 Å. In the third P site, P is bonded in an octahedral geometry to six F atoms. There are a spread of P–F bond distances ranging from 1.62–1.67 Å. In the fourth P site, P is bonded in an octahedral geometry to six F atoms. There are a spread of P–F bond distances ranging from 1.63–1.69 Å. There are forty inequivalent F sites. In the first F site, F is bonded in a single-bond geometry to one Xe atom. In the second F site, F is bonded in a single-bond geometry to one P atom. In the third F site, F is bonded in a single-bond geometry to one Ba and one P atom. In the fourth F site, F is bonded in a single-bond geometry to one Ba and one P atom. In the fifth F site, F is bonded in a single-bond geometry to one P atom. In the sixth F site, F is bonded in a distorted single-bond geometry to one Ba and one P atom. In the seventh F site, F is bonded in a bent 150 degrees geometry to one Xe and one Ba atom. In the eighth F site, F is bonded in a single-bond geometry to one Xe atom. In the ninth F site, F is bonded in a distorted bent 150 degrees geometry to one Xe and one Ba atom. In the tenth F site, F is bonded in a single-bond geometry to one P atom. In the eleventh F site, F is bonded in a single-bond geometry to one Ba and one P atom. In the twelfth F site, F is bonded in a single-bond geometry to one P atom. In the thirteenth F site, F is bonded in a distorted bent 120 degrees geometry to one Xe and one Ba atom. In the fourteenth F site, F is bonded in a single-bond geometry to one P atom. In the fifteenth F site, F is bonded in a linear geometry to one Xe and one Ba atom. In the sixteenth F site, F is bonded in a single-bond geometry to one Ba and one P atom. In the seventeenth F site, F is bonded in a distorted bent 120 degrees geometry to one Xe and one Ba atom. In the eighteenth F site, F is bonded in a distorted bent 150 degrees geometry to one Xe and one Ba atom. In the nineteenth F site, F is bonded in a single-bond geometry to one P atom. In the twentieth F site, F is bonded in a single-bond geometry to one P atom. In the twenty-first F site, F is bonded in a bent 150 degrees geometry to one Xe and one Ba atom. In the twenty-second F site, F is bonded in a single-bond geometry to one Ba and one P atom. In the twenty-third F site, F is bonded in a single-bond geometry to one Ba and one P atom. In the twenty-fourth F site, F is bonded in a single-bond geometry to one P atom. In the twenty-fifth F site, F is bonded in a distorted bent 150 degrees geometry to one Xe and one Ba atom. In the twenty-sixth F site, F is bonded in a distorted bent 150 degrees geometry to one Xe and one Ba atom. In the twenty-seventh F site, F is bonded in a single-bond geometry to one P atom. In the twenty-eighth F site, F is bonded in a single-bond geometry to one P atom. In the twenty-ninth F site, F is bonded in a distorted bent 150 degrees geometry to one Xe and one Ba atom. In the thirtieth F site, F is bonded in a single-bond geometry to one P atom. In the thirty-first F site, F is bonded in a single-bond geometry to one P atom. In the thirty-second F site, F is bonded in a single-bond geometry to one P atom. In the thirty-third F site, F is bonded in a distorted bent 150 degrees geometry to one Xe and one Ba atom. In the thirty-fourth F site, F is bonded in a 2-coordinate geometry to one Xe and one Ba atom. In the thirty-fifth F site, F is bonded in a single-bond geometry to one P atom. In the thirty-sixth F site, F is bonded in a single-bond geometry to one P atom. In the thirty-seventh F site, F is bonded in a distorted bent 150 degrees geometry to one Xe and one Ba atom. In the thirty-eighth F site, F is bonded in a single-bond geometry to one P atom. In the thirty-ninth F site, F is bonded in a bent 150 degrees geometry to one Xe and one Ba atom. In the fortieth F site, F is bonded in a distorted single-bond geometry to one Ba and one P atom.

36 MATERIALS SCIENCE↗

Materials Data on SbXeO2F7 by Materials Project

XeSbO2F7 is alpha Po structured and crystallizes in the triclinic P1 space group. The structure is zero-dimensional and consists of one XeSbO2F7 cluster. there are four inequivalent Xe sites. In the first Xe site, Xe is bonded in a 6-coordinate geometry to two O and four F atoms. There is one shorter (1.84 Å) and one longer (1.85 Å) Xe–O bond length. There are a spread of Xe–F bond distances ranging from 2.03–2.65 Å. In the second Xe site, Xe is bonded in a 6-coordinate geometry to two O and four F atoms. Both Xe–O bond lengths are 1.84 Å. There are a spread of Xe–F bond distances ranging from 2.03–2.64 Å. In the third Xe site, Xe is bonded in a 6-coordinate geometry to two O and four F atoms. Both Xe–O bond lengths are 1.84 Å. There are a spread of Xe–F bond distances ranging from 2.03–2.66 Å. In the fourth Xe site, Xe is bonded in a 6-coordinate geometry to two O and four F atoms. Both Xe–O bond lengths are 1.84 Å. There are a spread of Xe–F bond distances ranging from 2.04–2.67 Å. There are four inequivalent Sb sites. In the first Sb site, Sb is bonded in an octahedral geometry to six F atoms. There is three shorter (1.90 Å) and three longer (1.96 Å) Sb–F bond length. In the second Sb site, Sb is bonded in an octahedral geometry to six F atoms. There are a spread of Sb–F bond distances ranging from 1.89–1.98 Å. In the third Sb site, Sb is bonded in an octahedral geometry to six F atoms. There are a spread of Sb–F bond distances ranging from 1.89–1.98 Å. In the fourth Sb site, Sb is bonded in an octahedral geometry to six F atoms. There are a spread of Sb–F bond distances ranging from 1.89–1.98 Å. There are eight inequivalent O sites. In the first O site, O is bonded in a single-bond geometry to one Xe atom. In the second O site, O is bonded in a single-bond geometry to one Xe atom. In the third O site, O is bonded in a single-bond geometry to one Xe atom. In the fourth O site, O is bonded in a single-bond geometry to one Xe atom. In the fifth O site, O is bonded in a single-bond geometry to one Xe atom. In the sixth O site, O is bonded in a single-bond geometry to one Xe atom. In the seventh O site, O is bonded in a single-bond geometry to one Xe atom. In the eighth O site, O is bonded in a single-bond geometry to one Xe atom. There are twenty-eight inequivalent F sites. In the first F site, F is bonded in a distorted linear geometry to one Xe and one Sb atom. In the second F site, F is bonded in a single-bond geometry to one Xe and one Sb atom. In the third F site, F is bonded in a single-bond geometry to one Xe and one Sb atom. In the fourth F site, F is bonded in a single-bond geometry to one Sb atom. In the fifth F site, F is bonded in a single-bond geometry to one Sb atom. In the sixth F site, F is bonded in a single-bond geometry to one Sb atom. In the seventh F site, F is bonded in a single-bond geometry to one Xe and one Sb atom. In the eighth F site, F is bonded in a single-bond geometry to one Xe and one Sb atom. In the ninth F site, F is bonded in a single-bond geometry to one Xe and one Sb atom. In the tenth F site, F is bonded in a single-bond geometry to one Sb atom. In the eleventh F site, F is bonded in a single-bond geometry to one Sb atom. In the twelfth F site, F is bonded in a single-bond geometry to one Sb atom. In the thirteenth F site, F is bonded in a single-bond geometry to one Sb atom. In the fourteenth F site, F is bonded in a single-bond geometry to one Sb atom. In the fifteenth F site, F is bonded in a single-bond geometry to one Sb atom. In the sixteenth F site, F is bonded in a single-bond geometry to one Sb atom. In the seventeenth F site, F is bonded in a single-bond geometry to one Sb atom. In the eighteenth F site, F is bonded in a single-bond geometry to one Sb atom. In the nineteenth F site, F is bonded in a single-bond geometry to one Xe and one Sb atom. In the twentieth F site, F is bonded in a single-bond geometry to one Xe and one Sb atom. In the twenty-first F site, F is bonded in a single-bond geometry to one Xe and one Sb atom. In the twenty-second F site, F is bonded in a distorted single-bond geometry to one Xe and one Sb atom. In the twenty-third F site, F is bonded in a distorted linear geometry to one Xe and one Sb atom. In the twenty-fourth F site, F is bonded in a distorted linear geometry to one Xe and one Sb atom. In the twenty-fifth F site, F is bonded in a single-bond geometry to one Xe atom. In the twenty-sixth F site, F is bonded in a single-bond geometry to one Xe atom. In the twenty-seventh F site, F is bonded in a single-bond geometry to one Xe atom. In the twenty-eighth F site, F is bonded in a single-bond geometry to one Xe atom.

36 MATERIALS SCIENCE↗