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At least 127 records · Page 7

System and method for work function reduction and thermionic energy conversion

A thermionic energy converter, preferably including an anode and a cathode. An anode of a thermionic energy converter, preferably including an n-type semiconductor, one or more supplemental layers, and an electrical contact. A method for work function reduction and/or thermionic energy conversion, preferably including inputting thermal energy to a thermionic energy converter, illuminating an anode of the thermionic energy converter, thereby preferably reducing a work function of the anode, and extracting electrical power from the system.

Schwede, Jared William↗

System and method for work function reduction and thermionic energy conversion

A thermionic energy converter, preferably including an anode and a cathode. An anode of a thermionic energy converter, preferably including an n-type semiconductor, one or more supplemental layers, and an electrical contact. A method for work function reduction and/or thermionic energy conversion, preferably including inputting thermal energy to a thermionic energy converter, illuminating an anode of the thermionic energy converter, thereby preferably reducing a work function of the anode, and extracting electrical power from the system.

30 DIRECT ENERGY CONVERSION↗

System and method for work function reduction and thermionic energy conversion

A thermionic energy converter, preferably including an anode and a cathode. An anode of a thermionic energy converter, preferably including an n-type semiconductor, one or more supplemental layers, and an electrical contact. A method for work function reduction and/or thermionic energy conversion, preferably including inputting thermal energy to a thermionic energy converter, illuminating an anode of the thermionic energy converter, thereby preferably reducing a work function of the anode, and extracting electrical power from the system.

Schwede, Jared William↗

Strain-stabilized interfacial polarization tunes work function over 1 eV in RuO 2 /TiO 2 heterostructures

Interfacial polarization – charge accumulation at the heterointerface – is a well-established tool in semiconductors, but its influence in metals remains unexplored. Here, we demonstrate that interfacial polarization can robustly modulate surface work function in metallic rutile RuO 2 layers in epitaxial RuO 2 /TiO 2 heterostructures grown by hybrid molecular beam epitaxy. Using multislice electron ptychography, we directly visualize polar displacements of transition metal ions relative to oxygen octahedra near the interface, despite the conductive nature of RuO 2 . This interfacial polarization enables over 1 eV modulation of the RuO 2 work function, controlled by small thickness variations (2-3 nm), as measured by Kelvin probe force microscopy, with a critical thickness of ~4 nm – corresponding to the transition from fully-strained to relaxed film. These results establish interfacial polarization as a powerful route to control electronic properties in metals and have implications for designing tunable electronic, catalytic, and quantum devices through interfacial control in polar metallic systems.

Electronic properties and materials↗

Note: Work function change measurement via improved Anderson method

We propose the modification to the Anderson method of work function change (Δϕ) measurements. In this technique, the kinetic energy of the probing electrons is already low enough for non-destructive investigation of delicate molecular systems. However, in our implementation, all electrodes including filament of the electron gun are polarized positively. As a consequence, electron bombardment of any elements of experimental system is eliminated. Our modification improves cleanliness of the ultra-high vacuum system. As an illustration of the solution capabilities, we present Δϕ of the Ag(100) surface induced by cobalt phthalocyanine layers.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Effects of work function on thermal sensitivity of electrode potential

In recently developed thermally chargeable supercapacitors, temperature dependent capacitive effect is employed to harvest and store low-grade heat as electric energy, for which a key factor dominating the system performance is the thermal sensitivity of electrode potential (dV/dT). In the current study, the influence of electrode material properties, particularly the work function, is analyzed through a set of thermal-to-electric energy conversion experiments. The testing data suggest that dV/dT increases monotonously with the work function. This finding sheds light on electrode materials selection.

Lim, Hyuck↗

Comparison of CsBr and KBr coated Cu photocathodes. Effects of laser irradiation and work function changes

Thin films (7 nm layers) of CsBr and KBr were deposited on Cu(100) to investigate photoemission properties of these potential photocathode materials. After thin film deposition and prolonged laser ultraviolet (UV) irradiation (266 nm picosecond laser) photoemission quantum efficiency increases by factors of 26 and 77 for KBr/Cu(100) and CsBr/Cu(100) photocathodes, respectively. Immediately following thin film deposition, a decrease in work function is observed, compared to bare Cu, in both cases. Quantum efficiency enhancements are attributed to the decrease in photocathode work function, due to the deposition of alkali halide thin films, and photo-induced processes, that introduce defect states into the alkali halide bandgap, induced by UV laser irradiation. It is possible that alkali metal formation occurs during UV irradiation and that this further contributes to photoemission enhancement. Our results suggest that KBr, a relatively stable alkali-halide, has potential for photocathode applications.

14 SOLAR ENERGY↗

Strain effects on the work function of an organic semiconductor

Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ~0.05% tensile strain along the rubrene π-stacking direction. Lastly, the results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.

36 MATERIALS SCIENCE↗