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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

reliability↗
DOE OSTI2017

High Voltage LiNi 0.5 Mn 0.3 Co 0.2 O 2 /Graphite Cell Cycled at 4.6 V with a FEC/HFDEC-Based Electrolyte

A high voltage LiNi0.5Mn0.3Co0.2O2/graphite cell with a fluorinated electrolyte formulation 1.0 m LiPF6 fluoroethylene carbonate/bis(2,2,2-trifluoroethyl) carbonate is reported and its electrochemical performance is evaluated at cell voltage of 4.6 V. Comparing with its nonfluorinated electrolyte counterpart, the reported fluorinated one shows much improved Coulombic efficiency and capacity retention when a higher cut-off voltage (4.6 V) is applied. Scanning electron microscopy/energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy data clearly demonstrate the superior oxidative stability of the new electrolyte. The structural stability of the bulk cathode materials cycled with different electrolytes is extensively studied by X-ray absorption near edge structure and X-ray diffraction.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2015

Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Separating inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from the spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, the inversion of the spin injection direction changes the ISHE voltage signal, while the SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range and has the flexibility of sample preparation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO{sub 2}) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO{sub 2}. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO{sub 2} can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Alternative Vector PWM for CSI Common-Mode Voltage Reduction During Voltage-Boost Operation with Low Modulation Index

This paper proposes a new pulse-width modulation (PWM) scheme named alternative vector PWM (AVM) algorithm that reduces the common-mode voltage (vCM) generated by a 3-phase current source inverter (CSI) during operation within a portion of its voltage-boost regime when the CSI’s modulation index is below 1/3–√(=0.5774). Three different active current vector pairs (one conventional pair with adjacent active current vectors and two proposed pairs with non-adjacent active current vectors) are used to reduce vCM based on the CSI’s output voltage conditions. Experimental results confirm significant reductions in major vCM spectral components by up to approx. 85% between the 3rd harmonic of the fundamental frequency and the CSI’s PWM frequency, validating the advantages of the proposed AVM algorithm over the conventional PWM.

42 ENGINEERING↗
DOE OSTI2024

Multiterminal High-Voltage dc Systems with Series-Parallel Valve Group-Based High-Voltage dc Substations

To transfer large amount of power over long distances, multiterminal direct current (MTdc) system based on bipole high-voltage direct current (HVdc) technology is a viable option. However, such system results in large dc transmission loss. The same can be reduced by increasing the dc voltage level. This paper introduces a new MTdc system architecture comprising of series (for increasing dc voltage level) and parallel (for increasing dc current capability) connected HVdc converters. The new architecture is compared with the bipole MTdc architecture in terms of equipment needed and dc transmission loss. The control modifications needed for the MTdc system are identified and the performance of the developed control is verified through electromagnetic transient (EMT) simulations.

Jaldanki, Sreenivasa↗
DOE OSTI2016

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

The forward-pulse isothermal current–voltage characteristics of 4H-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from–80 to +90°C (193–363 K) up to current densities j of ~5600 A/cm{sup 2} at–80°C and 3000 A/cm{sup 2} at +90°C. In these measurements, the overheating of the structures relative to the ambient temperature, ΔT, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an S-type differential resistance. The pulsed isothermal current–voltage characteristics are also measured at a temperature of 77 K.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

36 MATERIALS SCIENCE↗
DOE OSTI2026

Short Circuit Detection and Voltage Sense for High Voltage Ionization Tube Power Supplies

Fermilab's PIP-II upgrade requires new rack-mounted power supplies for Beam Loss Monitor (BLM) ionization tubes compatible with the microTCA 4.1 standard, supporting high-side current measurement for short circuit detection, voltage sense telemetry, and low-side current measurement for beam loss readout. This work presents the design and preliminary schematic of such a supply. A resistive current sensing approach was chosen over inductive, optical, and Hall-effect alternatives for its independence from cable length and component availability. A 500 mΩ inline shunt steps the 2 kV common mode voltage down to roughly 70 V, producing a ~27 μV pulse during a short, which is amplified 500x, compared against a 14-bit DAC threshold, and latched to drive a fault line. Voltage sense steps the 2 kV output down at a 1V/1000V ratio, buffers it with a low bias current amplifier, and digitizes it via a 24-bit ADC over SPI. Onboard power is regulated from 12 V down to isolated 5 V and 3.3 V rails, with capacitive isolation on FPGA communication lines. Lumped parameter models were developed for the ionization tube (0.327 nF, 20 to 200 GΩ dynamic resistance) and the RG-58 coaxial cable to support the design. Component selection is complete and a preliminary schematic has been drawn in Altium Designer, forming the foundation for future prototyping and validation.

Yu, Kellen [Cornell U.]↗
NASA NTRS1968

Solid state high-voltage pulser operates with low supply voltage

High speed klystron cathode pulser requires low voltage to generate high-voltage pulses. Broadband video transformers are wound in two configurations - /1/ transmission line, multifilar toroids and /2/ loop coupling toroids. The circuit adapts to generate high-speed, high-voltage, high-stability power pulses at megawatt levels.

Milberger, W. E.↗
NASA NTRS1985

Surface voltage gradient role in high voltage solar array-plasma interaction: Center Director's discretionary fund

A large amount of experimental and analytical effort has been directed toward understanding the plasma sheath growth and discharge phenomena which lead to high voltage solar array-space plasma interactions. An important question which has not been addressed is how the surface voltage gradient on such an array may affect these interactions. The results of this study indicate that under certain conditions, the voltage gradient should be taken into account when evaluating the effect on a solar array operating in a plasma environment.

Carruth, M. R., Jr.↗
DOE OSTI2016

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2017

Unravelling the origin of irreversible capacity loss in NaNiO 2 for high voltage sodium ion batteries

Layered transition metal compounds have attracted much attention due to their high theoretical capacity and energy density for sodium ion batteries. However, this kind of material suffers from serious irreversible capacity decay during the charge and discharge process. Here, using synchrotron-based operando transmission X-ray microscopy and high-energy X-ray diffraction combined with electrochemical measurements, the visualization of the dissymmetric phase transformation and structure evolution mechanism of layered NaNiO2 material during initial charge and discharge cycles are clarified. Phase transformation and deformation of NaNiO2 during the voltage range of below 3.0 V and over 4.0 V are responsible for the irreversible capacity loss during the first cycling, which is also confirmed by the evolution of reaction kinetics behavior obtained by the galvanostatic intermittent titration technique. These findings reveal the origin of the irreversibility of NaNiO2 and offer valuable insight into the phase transformation mechanism, which will provide underlying guidance for further development of high-performance sodium ion batteries.

high voltage↗