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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Generation of high-power nanosecond pulses from laser diode-pumped Nd:YAG lasers

Simulation results are used to compare the pulse energy levels and pulse energy widths that can be achieved with LD-pumped Nd:YAG lasers for both the pulse-transmission mode (PTM) and pulse-reflection mode (PRM) Q-switching methods for pulse energy levels up to hundreds of microjoules and pulse widths as short as 1 ns. It is shown that high-power pulses with pulse widths as short as 1 ns can be generated with PTM Q-switched in LD-pumped Nd:YAG lasers. With the PRM Q-switching method, pulse widths as short as 2 ns and pulse energy at the level of a few hundred microjoules can also be achieved but require pumping with 8-10-mJ AlGaAs laser diode arrays.

Chan, Kinpui↗
NASA NTRS1996

Electronic-To-Optical-To-Electronic Packet-Data Conversion

Space-time multiplexer (STM) cell-based communication system designed to take advantage of both high throughput attainable in optical transmission links and flexibility and functionality of electronic processing, storage, and switching. Long packets segmented and transmitted optically by wavelength-division multiplexing. Performs optoelectronic and protocol conversion between electronic "store-and-forward" protocols and optical "hot-potato" protocols.

Monacos, Steve↗
DOE OSTI2020

Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)

Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via in-situ high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO2 was used as the model system, which is important for commercial DRAMs and as emerging NVMs (through work-function engineering). We observed (1) clear shifting and coalescing of domains within a single grain, and (2) dramatic changes of the atomic arrangements and crystalline phases—both at voltages above the critical voltage measured for AFE switching. Similar synergistic in-situ structural-electrical characterization can pave the way to understand and engineer microscopic mechanisms for retention, fatigue, variability, sub-coercive switching and analog states in ferroelectric and AFE-based memory devices.

Lombardo, Sarah↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
DOE OSTI2024

What next: Further implosion space exploration on the path to NIF extended yield capability

We present quantitative motivations and assessments of various proposed and ongoing directions to further improving yields and target gain of igniting indirect-drive implosions at the National Ignition Facility (NIF). These include increasing compression and confinement time, improving hohlraum and ablator efficiency, and further increasing peak power and laser energy. 1D hydroscaled simulations, augmented by analytic 1D theory, have been used to project yield improvements for each of these implosion optimization tracks, normalized to the best current performing 4 MJ shot. At current NIF capabilities of 2.2 MJ, 450 TW, we project several paths could reach 15 MJ yield levels. We also expect several key implosion physics questions will be addressed in attempting to reach this yield level. These include demonstrating to what extent lower adiabat designs leading to higher compression will increase gain and efficiency, and whether we can reduce residual kinetic energy and ablator-fuel mix that is probably limiting the current burn-up fraction. For an envisaged NIF upgrade to EL = 3 MJ at fixed 450 TW peak power, scaling capsule size and fuel thicknesses faster than pure hydroscaling should allow for yields that could reach up to 60–80 MJ, depending on the efficiency gains realized in increasing deuterium-tritium fuel thickness, reducing hohlraum losses, and switching to lower Z ablators. The laser-plasma instability and beam transmission scaling in these larger hohlraums is shown to be favorable if the spot size is increased with hohlraum scale.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1981

A new method for focusing and imaging X-rays and gamma-rays with diffraction crystals

Bent diffraction crystals in which the intercrystalline-plane spacing is varied as a function of position in the crystal are used to focus monochromatic radiation from a point source or parallel beam down to a point image. Conversely, radiation from a point source can be focused into an outgoing parallel beam. The Bragg angle for diffraction of monochromatic radiation will now vary as a function of position in the crystal and this new degree of freedom is used to obtain focusing and imaging of the diffracted beam. This approach to focusing and imaging is applied to the design of a large-area, high resolution X-ray telescope that is also a high resolution monochromator with the unique feature that the width of the energy increment that is diffracted can be controlled and varied during the operation of the instrument. The field can be scanned with a wide energy increment and then switched to a narrow energy increment for the high resolution work. Both transmission and reflection type diffraction crystals can be used.

Smither, R. K.↗
NASA NTRS1994

Generating Submillimeter-Wave Frequencies From Laser Pulses

Semiconductor photoconductive switches generate electrical pulses containing submillimeter-wavelength carrier signals (frequency between 300 and 3,000 GHz) and harmonics thereof when illuminated with short-rise-time pulses from lasers. Device of this type used as local oscilator in heterodyne submillimeter-wave receiver. Electrical output of device coupled via transmission line, waveguide, or antenna to mixer circuitry of receiver. Phase delays between optically activated semiconductor switches determine output carrier frequencies. N electrical pulses generated by each laser pulse. Thus, fundamental output frequency is N times laser-pulse-repetition rate.

Spencer, Michael G.↗
NASA NTRS1979

Preliminary study, analysis and design for a power switch for digital engine actuators

Innovative control configurations using high temperature switches to operate actuator driving solenoids were studied. The impact on engine control system life cycle costs and reliability of electronic control and (ECU) heat dissipation due to power conditioning and interface drivers were addressed. Various power supply and actuation schemes were investigated, including optical signal transmission and electronics on the actuator, engine driven alternator, and inside the ECU. The use of a switching shunt power conditioner results in the most significant decrease in heat dissipation within the ECU. No overall control system reliability improvement is projected by the use of remote high temperature switches for solenoid drivers.

Beattie, E. C.↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
NASA NTRS1989

Mixture block coding with progressive transmission in packet video. Appendix 1: Item 2

Video transmission will become an important part of future multimedia communication because of dramatically increasing user demand for video, and rapid evolution of coding algorithm and VLSI technology. Video transmission will be part of the broadband-integrated services digital network (B-ISDN). Asynchronous transfer mode (ATM) is a viable candidate for implementation of B-ISDN due to its inherent flexibility, service independency, and high performance. According to the characteristics of ATM, the information has to be coded into discrete cells which travel independently in the packet switching network. A practical realization of an ATM video codec called Mixture Block Coding with Progressive Transmission (MBCPT) is presented. This variable bit rate coding algorithm shows how a constant quality performance can be obtained according to user demand. Interactions between codec and network are emphasized including packetization, service synchronization, flow control, and error recovery. Finally, some simulation results based on MBCPT coding with error recovery are presented.

Chen, Yun-Chung↗
NASA NTRS1991

Optical shutter switching matrix

The interface switching systems are discussed which are related to those used in the Space Shuttle ground control system, transmission systems, communications systems, and airborne radar electronic countermeasure systems. The main goal is to identify a need that exists throughout the comprehensive information processing and communications disciplines supporting the Space Shuttle and Space Station programs, and introduce one viable approach to satisfy that need. The proposed device, described in NASA patent entitled 'Optical Shutter Switch Matrix', is discussed.

Grove, Charles H.↗
NASA NTRS1990

Electro-optic network analyzer

The bandwidth of frequency domain measurement methods of electrical signals has usually been far greater than the bandwidth of time domain methods. The primary limits of the time domain approach have been the 20 to 30 GHz bandwidth limit for electronic waveform acquisition instrumentation, and the lack of usable electrical pulse generators for excitation of a test device. The bandwidth of frequency domain network analysis appears to have reached a plateau of between 100 to 200 GHz, while time domain measurement have improved markedly in both bandwidth and sensitivity with the introduction of the pulsed laser based electro-optic sampling approach. Network analysis or the measurement of device scattering parameters provides information necessary to the design of electronic network such as high frequency amplifiers, mixers, and phase shifter. The bandwidth of frequency domain network analysis is currently being exceeded by the next generations of high frequency transistors and devices. Thus the electro-optic approach is a natural means of extending network analysis into the range above 100 GHz by employing time domain methods. In this approach, a suitable electrical excitation pulse is generated and propagated along a transmission line toward a test device. In the picosecond domain, laser driven photoconductive switches provide a unique method of generating electrical transients. Several materials were studied for generating short electrical pulses using photoconductive switches. The various semiconductive materials tested for photoconductive switching, and the electro-optic measurement technique used to characterize the material performance are described.

Jackson, Todd A.↗
DOE OSTI2021

A transmission hologram for slitless spectrophotometry on a convergent telescope beam. 1. Focus and resolution

We report in this paper the test of a plane holographic optical element to be used as an aberration-corrected grating for a slitless spectrograph, inserted in a convergent telescope beam. Our long-term objective is the optimization of a specific hologram to switch the auxiliary telescope imager of the Vera Rubin Observatory into an accurate slitless spectrograph, dedicated to the atmospheric transmission measurement. We present and discuss here the promising results of tests performed with prototype holograms at the CTIO $0.9\,$m telescope during a run of 17 nights in 2017 May–June. After their on-sky geometrical characterization, the performances of the holograms as aberration-balanced dispersive optical elements have been established by analysing spectra obtained from spectrophotometric standard stars and narrow-band emitter planetary nebulae. Thanks to their additional optical function, our holographic disperser prototypes allow us to produce significantly better focused spectra within the full visible wavelength domain $[370,1050]\,$nm than a regular grating, which suffers from strong defocusing and aberrations when used in similar conditions. We show that the resolution of our slitless on-axis spectrograph equipped with the hologram approaches its theoretical performance. While estimating the benefits of a hologram for the spectrum resolution, the roadmap to produce a competitive holographic element for the Vera Rubin Observatory auxiliary telescope has been established.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Smart-DS: Synthetic Models for Advanced, Realistic Testing: Distribution Systems and Scenarios

The explosion of new ideas for distributed energy resources and advanced distribution grid algorithms faces a critical challenge: how can one effectively develop and evaluate these breakthrough technologies without an adequate set of power systems network, load, and resource data to test against? Today's open test systems, particularly for distribution systems, are tiny and incomplete; and though with enough effort, obtaining utility data under NDA can overcome scale challenges, the results can't be openly shared, preventing fair comparison. The Smart-DS project-led by NREL in partnership with MIT, Universidad Pontificia Comillas, CYME, and EDD-is working to overcome this gap by generating multiple large-scale, open, synthetic, distribution systems that are realistic but not real. These datasets go beyond a single medium voltage feeder (~1000 customers) to cover entire metropolitan areas and their surrounds with up to hundreds of feeders and millions of customers, complete with low voltage customer connections and high voltage sub-transmission. This scale allows adequate testing and analysis of not just local controls and advanced DERs, but also multiple substation interactions, optimized switching, full-scale distribution-OPF, and more. To accompany these datasets, the project is also building a rich set of scenario generation tools that can be used for distribution and transmission systems alike. This includes automated, spatially aware access to world-class, high-resolution solar, wind, and weather data: forward looking generation mixes: and highly configurable DER, load, climate, outage, control-scheme, and other scenarios. We will also highlight DiTTo, an exciting open-source, multi-way distribution dataset transformation tool for many-to-many format translation with scenario, merge/split, and many other manipulation capabilities.

DERs↗
DOE OSTI2020

High-Frequency Signature-Based Fault Detection for Future MV Distribution Grids: Preprint

Increased deployment of Distributed Energy Resources (DERs) and microgrids are significantly changing the operation of distribution grid. Increasing penetration of power electronics based DERs also raise several operational problems such as protection coordination issues, voltage raise, recloser synchronization, stability, and frequency control. Legacy systems are designed for unidirectional power flow. Bidirectional power flows, and varying short circuit levels are some of the major challenges in implementing these legacy protection schemes for future power grid with high penetration of power electronics based DERs. Inverter based DER’s can contribute to a maximum of 2 p.u. fault current. Interconnection standards might require even lower fault current contribution. If these protection related challenges are not addressed, it will result in limiting the penetration of DERs in distribution feeders. In this paper, the feasibility of high frequency signature generated by transients is evaluated to identify and locate faults in a distribution system. The paper will discuss the need for an accurate line modeling approach to accurately capture the high frequency signatures. These high frequency signatures are naturally occurring electromagnetic transients for events such as switching events in the network, faults events, etc. This is different than that implemented in transmission systems as the proposed approach utilizes advanced signal processing techniques to retrieve valuable information from the high frequency signatures generated during faults and does not just rely on time delay measurements between reflections of the high frequency signals. In the full paper, information of a modified IEEE distribution feeder test system to accurately model the high frequency signatures will be provided. The distribution lines will be modeled using universal line modeling (ULM) technique in an electromagnetic transients program (EMTP) modeling platform. Different test cases will be simulated and these test cases will include different fault types, multiple fault locations, capacitor bank switching, etc. The feeder system modeled for these simulations will also include power electronics based DERs. Additionally, experimental results demonstrating the high frequency signatures generated due to a transient event in a medium voltage (13.8 kV) distribution line will also be presented in the full paper. Furthermore, the analysis combined with simulation and experimental results in the full paper will help demonstrate the feasibility and efficacy of the proposed protection scheme. The developed protection scheme will not just help solve problems generated by bidirectional current flow, varying short-circuit current capacity, but also help in proliferation of DERs in distribution systems.

41 EE - Solar Energy Technologies Office (EE-4S)↗
NASA NTRS1965

Molecules and memory.

Molecules and memory, discussing role of RNA as switching element in memory processes

NEURON TRANSMISSION↗