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Parallel lasers interact in shared space to alter output wavelength. New device consists of two stripe lasers in aluminum gallium arsenide chip. Parallel stripes close enough so light from lower laser coupled into upper laser and vice versa. Lasers operated by low-duty-cycle current pulses. Lasing threshold of each about 100 mA. Currents controlled independently. Useful in optical communications systems employing wavelength-division multiplexing.
Earlier studies of fundamental radiative properties of cirrus clouds suggest the presence of a significant radiative effect produced by small ice crystals of sizes below the detection thresholds of currently available in situ probes. This paper examines visible versus IR radiation relationships to explain the nature and implications of the cirrus small-particle radiative anomaly. It is concluded that the apparent phenomenon of cirrus small particle radiative anomaly is likely due to the approximate treatment of the radiative properties of actual cirrus particles.
Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.
The neutral hydrogen and the ionized helium absorption in the spectra of high-redshift quasi-stellar objects (QSOs) are unique probes of structure in the universe at epochs intermediate between the earliest density fluctuations seen in the cosmic background radiation and the distribution of galaxies visible today. We present Far-Ultraviolet Spectroscopic Explorer (FUSE) observations of the line of sight to the QSO HE2347-4342 in the 1000-1187 angstrom band at a resolving power of 15,000. Above redshift z = 2.7, the IGM is largely opaque in He II Ly-alpha (304 angstroms). At lower redshifts, the optical depth gradually decreases to a mean value tau = 1 at z = 2.4. We resolve the He II Ly-alpha absorption as a discrete forest of absorption lines in the z = 2.3 - 2.7 redshift range. Approximately 50% of these spectral features have H I counterparts with column densities N(sub HI) > 10(exp 12.3)/sq cm visible in a Keck spectrum. These account for most of the observed opacity in He II Ly-alpha. The remainder have N(sub HI) < 10(exp 12.3)/sq cm, below the threshold for current observations. A short extrapolation of the power-law distribution of H I column densities to lower values can account for these new absorbers. The He II to H I column density ratio eta averages approximately 80, consistent with photoionization of the IGM by a hard ionizing spectrum resulting from the integrated light of quasars at high redshift, but there is considerable scatter. Values of eta > 100 in many locations indicate that there may be localized contributions from starbursts or heavily filtered QSO radiation.
Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.
Sectors may combine or split within areas of specialization in response to changing traffic patterns. This method of managing capacity and controller workload could be made more flexible by dynamically modifying sector boundaries. Much work has been done on methods for dynamically creating new sector boundaries [1-5]. Many assessments of dynamic configuration methods assume the current day baseline configuration remains fixed [6-7]. A challenging question is how to select a dynamic configuration baseline to assess potential benefits of proposed dynamic configuration concepts. Bloem used operational sector reconfigurations as a baseline [8]. The main difficulty is that operational reconfiguration data is noisy. Reconfigurations often occur frequently to accommodate staff training or breaks, or to complete a more complicated reconfiguration through a rapid sequence of simpler reconfigurations. Gupta quantified a few aspects of airspace boundary changes from this data [9]. Most of these metrics are unique to sector combining operations and not applicable to more flexible dynamic configuration concepts. To better understand what sort of reconfigurations are acceptable or beneficial, more configuration change metrics should be developed and their distribution in current practice should be computed. This paper proposes a method to select a simple sequence of configurations among operational configurations to serve as a dynamic configuration baseline for future dynamic configuration concept assessments. New configuration change metrics are applied to the operational data to establish current day thresholds for these metrics. These thresholds are then corroborated, refined, or dismissed based on airspace practitioner feedback. The dynamic configuration baseline selection method uses a k-means clustering algorithm to select the sequence of configurations and trigger times from a given day of operational sector combination data. The clustering algorithm selects a simplified schedule containing k configurations based on stability score of the sector combinations among the raw operational configurations. In addition, the number of the selected configurations is determined based on balance between accuracy and assessment complexity.
We develop an empirical model capable of simulating the mean echo power cross product of CryoSat-2 SAR and SAR In mode waveforms over sea ice covered regions. The model simulations are used to show the importance of variations in the radar backscatter coefficient with incidence angle and surface roughness for the retrieval of surfaceelevation of both sea ice floes and leads. The numerical model is used to fit CryoSat-2 waveforms to enable retrieval of surface elevation through the use of look-up tables and a bounded trust region Newton least squares fitting approach. The use of a model to fit returns from sea ice regions offers advantages over currently used threshold retrackingmethods which are here shown to be sensitive to the combined effect of bandwidth limited range resolution and surface roughness variations. Laxon et al. (2013) have compared ice thickness results from CryoSat-2 and IceBridge, and found good agreement, however consistent assumptions about the snow depth and density of sea ice werenot used in the comparisons. To address this issue, we directly compare ice freeboard and thickness retrievals from the waveform fitting and threshold tracker methods of CryoSat-2 to Operation IceBridge data using a consistent set of parameterizations. For three IceBridge campaign periods from March 20112013, mean differences (CryoSat-2 IceBridge) of 0.144m and 1.351m are respectively found between the freeboard and thickness retrievals using a 50 sea ice floe threshold retracker, while mean differences of 0.019m and 0.182m are found when using the waveform fitting method. This suggests the waveform fitting technique is capable of better reconciling the seaice thickness data record from laser and radar altimetry data sets through the usage of consistent physical assumptions.
The Main Control Room of the Fermilab accelerator complex continuously gathers extensive time-series data from thousands of sensors monitoring the beam. However, unplanned events such as trips or voltage fluctuations often result in beam outages, causing operational downtime. This downtime not only consumes operator effort in diagnosing and addressing the issue but also leads to unnecessary energy consumption by idle machines awaiting beam restoration. The current threshold-based alarm system is reactive and faces challenges including frequent false alarms and inconsistent outage-cause labeling. To address these limitations, we propose an AI-enabled framework that leverages predictive analytics and automated labeling. Using data from $2,703$ Linac devices and $80$ operator-labeled outages, we evaluate state-of-the-art deep learning architectures, including recurrent, attention-based, and linear models, for beam outage prediction. Additionally, we assess a Random Forest-based labeling system for providing consistent, confidence-scored outage annotations. Our findings highlight the strengths and weaknesses of these architectures for beam outage prediction and identify critical gaps that must be addressed to fully harness AI for transitioning downtime handling from reactive to predictive, ultimately reducing downtime and improving decision-making in accelerator management.
The temporal evolution of the voltage-current characteristic of a spherical Langmuir probe in the near-wake region of a conducting body is investigated in a pulsed plasma device. Measurements of the current collected by a sphere placed on axis behind a conducting disk are presented as a function of the bias voltage and time. The bias voltage on the collecting sphere is large enough, ranging from +500 to -3000 V, to attract ions or electrons across the wake region. In addition, plasma potential profiles as a function of sphere bias voltage and time throughout the nearwake and midwake region are presented. It is found that for a negative sphere bias a threshold voltage exists for current collection. This threshold voltage decreases during the formation of the wake behind the conducting disk. Potential measurements indicate that the sheath region around the negatively biased sphere contracts as the wake region establishes itself. This contraction of the sheath region increases the electric field attracting ions to the sphere and decreases the threshold voltage for current collection. For positive sphere bias voltage the current collected by the sphere does not exhibit a threshold voltage but is monotonically increasing.
Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.
The Hall current electrojet instability was studied to determine if it generates VLF hiss in the auroral zone of magnetic substorms. Using the kinetic equations with particle conserving Krook collision operator for electrons and ions, and Poisson's equation, it is shown that in the low frequency region, the range of frequency of unstable modes increases as the electron density increases, and that the high frequency component must be taken into account in calculations of turbulent saturation of the Hall current instability driven beyond threshold. It is concluded that Hall currents can generate waves in the VLF hiss frequency band which are related to local auroral electrojet activity.
A coupled magnetospheric-ionospheric (M-I) magnetohydrodynamic (MHD) model has been used to simulate the formation of Sun-aligned polar cap arcs for a variety of interplanetary magnetic field (IMF) dependent polar cap convection fields. The formation process involves launching an Alfven shear wave from the magnetosphere to the ionosphere where the ionospheric conductance can react self-consistently to changes in the upward currents. We assume that the initial Alfven shear wave is the result of solar wind-magnetosphere interactions. The simulations show how the E region density is affected by the changes in the electron precipitation that are associated with the upward currents. These changes in conductance lead to both a modified Alfven wave reflection at the ionosphere and the generation of secondary Alfven waves in the ionosphere. The ensuing bouncing of the Alfven waves between the ionosphere and magnetosphere is followed until an asymptotic solution is obtained. At the magnetosphere the Alfven waves reflect at a fixed boundary. The coupled M-I Sun-aligned polar cap arc model of Zhu et al.(1993a) is used to carry out the simulations. This study focuses on the dependence of the polar cap arc formation on the background (global) convection pattern. Since the polar cap arcs occur for northward and strong B(sub y) IMF conditions, a variety of background convection patterns can exist when the arcs are present. The study shows that polar cap arcs can be formed for all these convection patterns; however, the arc features are dramatically different for the different patterns. For weak sunward convection a relatively confined single pair of current sheets is associated with the imposed Alfven shear wave structure. However, when the electric field exceeds a threshold, the arc structure intensifies, and the conductance increases as does the local Joule heating rate. These increases are faster than a linear dependence on the background electric field strength. Furthermore, above the threshold, the single current sheet pair splits into multiple current sheet pairs. For the fixed initial ionospheric and magnetospheric conditions used in this study, the separation distance between the current pairs was found to be almost independent of the background electric field strength. For either three-cell or distorted two-cell background convection patterns the arc formation favored the positive B(sub y) case in the northern hemisphere.
A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.
With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.
Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.
This Letter presents measurements of single-differential cross sections of $ν_μ$-induced charged-current 1 $π^{+}$ production on scintillator using the MINERvA detector at Fermilab. These measurements use traditional track-based pion reconstruction as well as pions identified solely via Michel electron decays, allowing measurement of kinetic energies from 0 to 350 MeV. In total, 91,843 events were selected with $W_{exp}$$<$ 1.4 GeV/c. Differential cross sections as a function of pion and muon kinematic variables are presented and compared with the predictions of several neutrino event generators. Overall, modern pion production models tend to agree with data at the ends of the kinematic regions probed, but are discrepant with the main regions of the phase space probed by up to 15% in muon observables and up to 20% in pion observables. No model describes any of the variables well, and this result highlights model areas that require improvement for the next generation of neutrino oscillation experiments.
Five different types of solar arrays have been tested in large vacuum chamber. Arc inception voltages, arc rates, and current collections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness does not improve measured array parameters. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 pm coverglass thickness and 60 V for the sample with 150 urn coverglass thickness.
Six different types of solar arrays have been tested in large vacuum chambers. The low earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current selections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness cases the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 micron coverglass thickness and 60 V for the sample with 150 micron coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.