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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Thin Film Sensors for Fission Surface Power

Physical sensors fabricated with thin films could result a significant savings in space and weight with improved reliability for monitoring the long-term operation of fission surface power systems. Thin film sensors of 1 µm or less are attractive for FSP applications because they can be incorporated onto component surfaces with minimal machining and the additional weight to a system is minimal compared to thick film-, wire-, or foil-based sensors. The thin, surface fabrication of the sensors is also expected to make them less susceptible to deep dose effects that affect thicker sensors. An overview of thin film sensors using thermocouples and resistive elements designed, fabricated, and demonstrated at GRC for aerospace applications exceeding 900°C is presented.

Fission Surface Power↗
NASA NTRS1978

Moessbauer study in thin films of FeSi2 and FeSe systems

Thin films of FeSi2 and FeSe were studied using Moessbauer spectroscopy information regarding dangling bond configuration and nature of crystal structure in thin films was derived. A significant influence of crystalline aluminum substrate on film structure was observed.

Escue, W. J.↗
NASA NTRS1998

Analysis of Hard Thin Film Coating

Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Shen, Dashen↗
NASA NTRS2000

Thin-Film Photovoltaic Solar Array Parametric Assessment

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Hoffman, David J.↗
NASA NTRS1969

Oriented Te thin films.

Vapor deposited tellurium thin films orientation, noting effect of characteristic spiral chain structure along c-axis

Dutton, R. W.↗
NASA NTRS1974

Preparation and evaluation of thin-film sodium tungsten bronzes

Thin films of sodium tungsten bronze (NaxWO3) were investigated as reversible sodium ion electrodes for solid electrolytes. The films were made by electron beam evaporation of the three phases, W metal, Na2WO4, and WO3, followed by sintering. The substrates were sodium beta alumina disks and glass slides. X-ray diffraction analyses of the films showed that sintering in dry nitrogen with prior exposure to air lead to mixed phases. Sintering in vacuum with no air exposure produced tetragonal I bronze with a nominal composition of Na0.31WO3, single phase within the limits of X-ray diffraction detectability. The films were uniform and adherent on sodium beta alumina substrates. The ac and dc conductivities of the beta alumina were measured with the sodium tungsten bronze films as electrodes. These experiments indicated that the tetragonal I bronze electrodes were not completely reversible. This may have resulted from sodium ion blocking within the bronze film or at the bronze beta alumina interface. Methods for attempting to make more completely reversible electrodes are suggested.

Kautz, H. E.↗
NASA NTRS1974

Ovonic switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

Baxter, C. R.↗
NASA NTRS1975

Ovonic type switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.

Baxter, C. R.↗
NASA NTRS1989

Surface temperature measurements using a thin film thermal array

A thin film device was designed and fabricated to measure surface temperatures. An array of eight integrated thermal sensors are mounted on a 0.002 inch (0.05 mm) Kapton film and multiplexed to obtain an area thermal measurement. The device was tested on a flat plate airfoil and demonstrated a temperature variation of 0.55 C maximum and 0.05 C minimum compared to embedded thermocouples. Future improvements are also discussed.

Dillon-Townes, L. A.↗
NASA NTRS1989

Directions for further development of GaAs/CuInSe2 thin film tandem cells

Multijunction thin film solar cells utilizing GaAs and CuInSe2 as semiconductor absorbers are rapidly developing, becoming a viable technology for space power systems with an unparalleled combination of high efficiency, low mass, and high radiation tolerance. The prospect for evolutionary improvement of this type of cell towards efficiency of approximately equals 30 percent and specific power greater than 1 kW/kg while retaining the attribute of high radiation tolerance are good. Limitations of the present configuration and possible avenues for circumventing these problems are presented.

Stanbery, Billy J.↗
NASA NTRS1989

Theoretical and material studies of thin-film electroluminescent devices

Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

Summers, C. J.↗
NASA NTRS1993

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

Choi, S. W.↗
NASA NTRS1993

Continued improvment of large area, in situ sputter deposition of superconducting YBCO thin films

The deposition of thin films of superconducting YBa2Cu3O7-x onto substrates of up to 3-in diameter by an integrated off-axis sputtering is reported. The substrate is located above the center of an 8-in-diameter YBCO planar target, and, in conjunction with a negative ion shield, negative ion effects are avoided. A large radiant heater provides backside, noncontact heating of the bare substrates. YBCO films have been grown on polished 1-cm2 MgO and LaAlO3 substrates with Tc = 90 K or greater, Jc = 2.5 x 10 exp 6 A/sq cm or greater at 77 K, and microwave surface resistance Rs less than 0.4 micro-ohm at 77 K and 10 GHz. The films have a very smooth surface morphology. Uniformity data for LaAlO3 substrates are less than +/-5 percent in Rs. Thickness uniformity results for 3-in substrates indicate less than 10 percent variation. The growth of epitaxial insulating films for use with YBCO films and application of the YBCO films in microwave devices are briefly discussed.

Truman, J. K.↗
NASA NTRS1993

Cellulose triacetate, thin film dielectric capacitor

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

Yen, Shiao-Ping S.↗