Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “TDS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

Prognostic Implications of MRI-Detected EMVI and Tumor Deposits and Their Response to Neoadjuvant Therapy in cT3 and cT4 Rectal Cancer

Magnetic resonance imaging–detected extramural venous invasion (mrEMVI) and tumor deposits (TDs) are risk factors for the development of local recurrence and distant metastases (DMs) in rectal cancer. However, little is known about their response to neoadjuvant treatment and its relation to oncologic outcomes. This study evaluated the incidence and features of mrEMVI and TDs before and after neoadjuvant treatment in relation to the development of local recurrence and DMs.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

Effect of rhenium addition on deuterium retention in neutron-irradiated tungsten

In this work, the effects of rhenium (Re) addition on deuterium (D) retention in neutron-irradiated tungsten (W) were investigated. Pure W and W-5Re (5 at.%) alloy samples were irradiated with neutrons at High Flux Isotope Reactor using MFE-RB-19 J capsule. The sample temperature and the damage level were 864 K and 0.35 dpa for pure W and 792 K and 0.26 dpa for W-5Re alloy. A portion of the samples was exposed to D plasma at Tritium Plasma Experiment at Idaho National Laboratory at 823 K to a fluence of 5 × 1025 m -2 . Vacancy-type defects in neutron-irradiated samples were examined using positron annihilation spectroscopy (PAS); D retention after plasma exposure was evaluated by thermal desorption spectrometry (TDS). TDS measurements revealed that D retention in the neutron-irradiated W-5Re alloy was similar to that in the unirradiated W sample, whereas a significant increase in D retention was observed in neutron-irradiated W. Thus, Re addition significantly suppressed the increase in D retention after neutron irradiation. This effect was attributed to the suppression of vacancy-type defect formation, as confirmed by PAS.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Phase stability and microstructure of neutron-irradiated substoichiometric yttrium dihydrides

The impact of the neutron-displacement damage on phase stability and microstructure of substoichiometric yttrium dihydrides (YH x , x <2) were investigated to assess their use as solid moderator in high-temperature nuclear reactors. YH x specimens were, thus, subjected to neutron irradiations in the range of 0.1–2 displacements per yttrium atom (dpa-Y) in the temperature range of 536–878°C at the Oak Ridge National Laboratory's (ORNL's) High Flux Isotope Reactor (HFIR). YH x specimens were initially prepared at stoichiometry (H/Y) ratios of 1.69 and 1.83. HFIR-irradiated specimens were characterized by variety of techniques to investigate H retention characteristics including dimensional analysis, optical microscopy, scanning electron microscopy electron back scatter diffraction (EBSD), transmission electron microscopy, thermal desorption spectroscopy (TDS), and high-energy x-ray diffraction (HE-XRD) characterizations. Overall, YH x exhibited notable structural and phase stability under short-term neutron-irradiation, except for the samples with significant silicon carbide (SiC) interaction at high doses and temperatures. Basic dimensional and mass measurements were misleading for accurate assessment of H retention, as confirmed by EBSD phase maps, XRD line profiles, and TDS signals. Thus, it was discussed that a robust H retention metric is needed to assess irradiated hydrides. Further, nanoscale cavities were observed as a result of the neutron irradiation in all samples. Although no clear impact of dose and irradiation temperature was determined, the initial H/Y ratio had an impact on the cavity number density where low H/Y specimens had high-resistance to cavity formation. The Y-vacancy cluster formation at the collision stage of the displacement cascade and their stabilization by H were considered to be the likely underlying mechanisms for the observed cavity microstructure.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

The evolution of orientation relationships during the transformation of a twin-free T-particle to tenfold T-twins in an Al alloy during homogenisation

Highlights: • The ORs of T-phase change continuously during its transformation to tenfold twins. • The changes in ORs are achieved by lattice rotations of T-phase about [010]{sub T} axis. • The OR change of T-phase exhibits a relationship with its cross-section shape. • The OR change of T-phase reduce the interface misfit increased by newly-formed twins. • Rotation of T-particle requires coordinate deformation at the near-interface region. - Abstract: The crystallographic and morphological analysis of T-phase formation in Al alloys was investigated using high-resolution electron microscopy (HRTEM) and selected-area electron diffraction pattern (SAEDP). The results show that the orientation relationships (ORs) of the T-phase change continuously from its original ORs during the transformation of a twin-free T-particle to the tenfold T-twins. These OR changes were achieved by lattice rotations of T-twin domains (T-TDs) about the [010]{sub T}//[010]{sub Al} axis by an angle ranging from 0° to 9°, and this exhibits a relationship with the shape of the cross-sections of the T-phase (T-CSs). The changes in ORs of the T-phase can reduce the increase in interface misfit between the newly-formed T-TDs and the Al matrix. The matrix could only accommodate the rotation of a T-particle at the near-interface region at relatively high temperatures.

36 MATERIALS SCIENCE↗

Hydrogen isotope trapping in Al-Cu binary alloys

In this study, the trapping mechanisms for hydrogen isotopes in Al–X Cu (0.0 at. % < X < 3.5 at. %) alloys were investigated using thermal desorption spectroscopy (TDS), electrical conductivity, and differential scanning calorimetry. Constant heating rate TDS was used to determine microstructural trap energies and occupancies. In addition to the trapping states in pure Al reported in the literature (interstitial lattice sites, dislocations, and vacancies), a trap site due to Al–Cu intermetallic precipitates is observed. The binding energy of this precipitate trap is (18 ± 3) kJ•mol –1 (0.19 ± 0.03 eV). Typical occupancy of this trap is high; for Al–2.6 at. % Cu (a Cu composition comparable to that in AA2219) charged at 200 °C with 130 MPa D 2 for 68 days, there is ca. there is 3.15×10 –7 mol D bound to the precipitate trap per mol of Al, accounting for a third of the D in the charged sample.

36 MATERIALS SCIENCE↗

Microstructure, stored energy, and stability of H/He-filled nanocavities in low temperature irradiated Inconel 718

The microstructure, trapped transmutation gases, stored energy, and mechanical behavior of samples from an irradiated Inconel 718 proton beam window were characterized using transmission electron microcopy, thermal desorption spectrometry (TDS), differential scanning calorimetry (DSC), and tensile testing. In the as-irradiated condition the microstructure contained a high number density of 1–3 nm gas-filled nanocavities. Emissions of trapped gases, H and He, during TDS correlated with peaks of the energy release curves from DSC examinations, which suggest these gases were likely stored in highly stable defect traps. The stored energy from radiation damage saturated at doses of a few dpa and did not increase with increasing radiation dose, but the amount of stored H and He increased with increasing dose. Effects of post-irradiation annealing were studied as well. After exposure to 700 °C, the nanocavities grew only slightly to 2–4 nm in diameter, but after exposure to 900 °C, the cavities grew to 10–20 nm in diameter and electron energy-loss spectroscopy showed these cavities contained a core of He surrounded by a shell of H. Further, this study demonstrated that the irradiation defect structures containing H and He were remarkably stable during irradiation and after exposure up to 700 °C. The effect of the irradiation temperature, defect mobility, and interaction of H, He, and irradiation defects on mechanical behavior provides insight into the processes responsible for the unusual recovery in ductility with increasing radiation dose observed in Inconel 718 after high energy proton and spallation neutron irradiation.

36 MATERIALS SCIENCE↗

Molecular thermodynamics for scaling prediction: Case of membrane distillation

Membrane distillation (MD) for water treatment is significantly impaired by the scaling of dissolved minerals. The type and content of minerals generally measured as total dissolved solids (TDS) in hypersaline brines not only reduce the MD flux but also control the scaling behavior on the membrane surface. The scaling-induced pore blockage further reduces water flux and eventually leads to membrane wetting. The scaling problem is even more pronounced in the treatment of produced water (PW) as it contains 3–7 times higher TDS concentrations, compared to seawater. Theoretically, the necessary conditions for a salt to precipitate can be traced from its solubility product constant and activity of the constituents within the solution. Therefore, a comprehensive thermodynamic model is necessary to represent the electrolyte behavior and to predict the precipitation of different salts in a complex solution like PW. We pursued electrolyte Nonrandom Two Liquid Theory (eNRTL), a state-of-the-art electrolyte model, to address the PW fluid phase equilibria. With a fully parameterized eNRTL model, we predicted salt precipitations in two different PW samples and compared the results against the experimental findings. Furthermore, here we forecast the precipitation of salts in response to the change in PW concentration and temperature in the MD operation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Low-cost desalination of seawater and hypersaline brine using nanophotonics enhanced solar energy membrane distillation

A stand-alone small-scale nanophotonics enhanced solar membrane distillation (NESMD) testbed was designed, developed, and tested for desalinating seawater and high salinity feedwaters. This NESMD system can take almost any source water and turn it into clean water with sunlight as the only energy source. The NESMD technology applies nanophotonic coating materials on a commercial hydrophobic polypropylene support of a polytetrafluoroethylene (PTFE) membrane surface. The photothermal coating serves as a solar thermal collector, absorbs solar energy, and generates highly localized heat on the membrane, while the rest of the membrane performs membrane distillation functions. The presented NESMD system is equipped with an internal heat recovery system with no need for external electricity and no additional water for cooling. The NESMD testbed is installed and tested at Rice University campus (29.7174° N, 95.4018° W). In this study, real seawater from Galveston Bay, Texas, U.S. and high salinity simulated feedwaters (total dissolved solids (TDS) of 113 200–200 000 PPM) have been tested for long-term testing under the weather conditions of Houston, Texas. Here, the field testing results showed stable desalination performance in consecutive 5–8 hour operation cycles, with a TDS removal of ≥99.5% in all experiments. An average daily membrane flux of ≥0.75 L m –2 h –1 was achieved at a solar intensity close to 1 kW m –2 without an external heat exchanger. Further investigations and improvements are required to enhance the performance of the reactor since it is still a new promising technology.

14 SOLAR ENERGY↗

Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy

We demonstrated a novel and widely accessible method for determining the electron effective mass and scattering time of ZnO films with different carrier concentrations by combining terahertz time-domain spectroscopy with Hall measurement. The terahertz time domain spectroscopy (THz-TDS) transmission spectra (0.1–2THz) were well described by Drude model. It is found that electron effective mass varied from 0.23m{sub 0} to 0.26m{sub 0} as the electron concentration changes from 5.9 × 10{sup 17} cm{sup −3} to 4.0 × 10{sup 19} cm{sup −3}. The carrier concentration dependent characteristic is ascribed to the non-parabolicity of conduction band. Free carrier localization mechanism explained the discrepancy in mobilities obtained from THz-TDS and Hall measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Film growth, adsorption and desorption kinetics of indigo on SiO{sub 2}

Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation of dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer desorption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Desorption of oxygen from alloyed Ag/Pt(111)

We have investigated the interaction of oxygen with the Ag/Pt(111) surface alloy by thermal desorption spectroscopy (TDS). The surface alloy was formed during the deposition of sub-monolayer amounts of silver on Pt(111) at 800 K and subsequent cooling to 300 K. The low-temperature phase of the surface alloy is composed of nanometer-sized silver rich stripes, embedded within platinum-rich domains, which were characterized with spot profile analysis low energy electron diffraction. The TDS measurements show that oxygen adsorption is blocked on Ag sites: the saturation coverage of oxygen decreases with increasing Ag coverage. Also, the activation energy for desorption (E{sub des}) decreases with Ag coverage. The analysis of the desorption spectra from clean Pt(111) shows a linear decay of E{sub des} with oxygen coverage, which indicates repulsive interactions between the adsorbed oxygen atoms. In contrast, adsorption on alloyed Ag/Pt(111) leads to an attractive interaction between adsorbed oxygen atoms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

THz time-domain spectroscopy for tokamak plasma diagnostics

The technology is now becoming mature for diagnostics using large portions of the electromagnetic spectrum simultaneously, in the form of THz pulses. THz radiation-based techniques have become feasible for a variety of applications, e.g., spectroscopy, imaging for security, medicine and pharmaceutical industry. In particular, time-domain spectroscopy (TDS) is now being used also for plasma diagnostics in various fields of application. This technique is promising also for plasmas for fusion applications, where plasma characteristics are non-uniform and/or evolve during the discharge This is because THz pulses produced with femtosecond mode-locked lasers conveniently span the spectrum above and below the plasma frequency and, thus, can be used as very sensitive and versatile probes of widely varying plasma parameters. The short pulse duration permits time resolving plasma characteristics while the large frequency span permits a large dynamic range. The focus of this work is to present preliminary experimental and simulation results demonstrating that THz TDS can be realistically adapted as a versatile tokamak plasma diagnostic technique.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Bulk crystal growth and electronic characterization of the 3D Dirac semimetal Na{sub 3}Bi

High quality hexagon plate-like Na{sub 3}Bi crystals with large (001) plane surfaces were grown from a molten Na flux. The freshly cleaved crystals were analyzed by low temperature scanning tunneling microscopy and angle-resolved photoemission spectroscopy, allowing for the characterization of the three-dimensional (3D) Dirac semimetal (TDS) behavior and the observation of the topological surface states. Landau levels were observed, and the energy-momentum relations exhibited a linear dispersion relationship, characteristic of the 3D TDS nature of Na{sub 3}Bi. In transport measurements on Na{sub 3}Bi crystals, the linear magnetoresistance and Shubnikov-de Haas quantum oscillations are observed for the first time.

36 MATERIALS SCIENCE↗

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

We systematically investigated the influence of nanoscale V-pits on the internal quantum efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying superlattices (SLS). The analysis indicated that high barrier energy of sidewall MQWs on V-pits and long diffusion distance between the threading dislocation (TD) center and V-pit boundary were crucial to effectively passivate the non-radiative centers of TDs. For a larger V-pit, the thicker sidewall MQW on V-pit would decrease the barrier energy. On the contrary, a shorter distance between the TD center and V-pit boundary would be observed in a smaller V-pit, which could increase the carrier capturing capability of TDs. An optimized V-pit size of approximately 200–250 nm in our experiment could be concluded for MQWs with 15 pairs SLS, which exhibited an IQE value of 70%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Softening of infrared-active mode of perovskite BaZrO{sub 3} proved by terahertz time-domain spectroscopy

The low-frequency infrared-active optical modes were studied in a barium zirconate, BaZrO{sub 3}, single crystal with the perovskite structure using terahertz (THz) time-domain spectroscopy (TDS). The real and imaginary parts of the dielectric constants were accurately determined in the frequency range between 0.2 and 2.7 THz. Upon cooling from room temperature to 8 K, the lowest-frequency TO1 mode at 2.32 THz showed a pronounced softening to 1.94 THz. The real part of the dielectric constant at 0.5 THz determined by THz-TDS obeys Barrett's relation, and the existence of a plateau confirms that the quantum effects lead to saturation of the soft mode frequencies of the TO1 and TO2 modes below ≈20 K. This is reminiscent of incipient ferroelectrics with the perovskite structure such as CaTiO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin reorientation transition in Sm{sub 0.5}Tb{sub 0.5}FeO{sub 3} orthoferrite single crystal

Single crystal of Sm{sub 0.5}Tb{sub 0.5}FeO{sub 3} was grown by an optical floating zone method. The spin reorientation transition behavior (Γ{sub 2} → Γ{sub 24} → Γ{sub 4}) is observed in the temperature range from 150 to 250 K. The dynamics of spin reorientation transition is studied by terahertz time-domain spectroscopy (THz-TDS). FM mode was only discovered when temperature is below 55 K. And the FM mode resonant frequency increases from 0.216 THz to 0.268 THz with temperature deceasing from 55 K to 39 K. The AFM mode resonant frequency is fixed at 0.542 THz except in the very low temperature range. Our results demonstrate that THz-TDS is an effective means to study the dynamical iron ions SRT in RFeO{sub 3}.

36 MATERIALS SCIENCE↗