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At least 127 records · Page 7

Early results of the ATS-6 solar cell flight experiment

This paper presents preliminary ATS-6 solar-cell flight-experiment data through the first 247 days in synchronous orbit. The experiment is transmitting data on forty 2 x 2-cm solar cells representing 16 solar-cell configurations. The experiment is designed to study the effect of this orbit on select solar cells and cover-glass parameters such as solar-cell thickness and base resistivity, cover-glass thickness variation, new cover processes, and materials such as 7940 and 7070 integral covers as well as the FEP covers, the COMSAT 'violet' cell, and backside irradiation effects. The in-space solar-cell data indicate short-circuit currents are running higher by 1% to 8% than in measurements made with solar simulations; maximum power varied between -1% and +6%. Degradation of short-circuit current due to ultraviolet effects was determined to be about 2% after 50 days in orbit. All cells performed well through 247 days in orbit except the FEP-covered cells, which appear to have increased their rate of degradation during the eclipse season.

Goldhammer, L. J.↗

ATS-6 - Solar cell flight experiment after 325 days in synchronous orbit

Preliminary results of the Applications Technology Satellite-6 (ATS-6) solar cell flight experiment to isolate and identify solar cell degradation mechanisms resulting from particulate radiation and to obtain specific design data applicable to extended synchronous spacecraft missions are presented. The experiment includes 80 individual cells representing 16 different solar cell/cover glass configurations. Most of the cells are 0.030 cm thick boron doped n/p cells with 10 ohm cm resistivity and solder-coated AgTi contacts. The voltage-current characteristics were measured regularly. The data for the first 325 days of flight show short circuit currents 1-8% higher than measurements made with solar simulations. Maximum power varied between -1 and +6%. After 50 days in orbit the degradation of short circuit current due to ultraviolet effects was determined to be about 2%. All cells except those with fluorinated ethylene propylene covers performed well after 325 days.

Goldhammer, L. J.↗

Surface and allied studies in silicon solar cells

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Lindholm, F. A.↗

NASA Tech Briefs, December 2008

Topics covered include: Crew Activity Analyzer; Distributing Data to Hand-Held Devices in a Wireless Network; Reducing Surface Clutter in Cloud Profiling Radar Data; MODIS Atmospheric Data Handler; Multibeam Altimeter Navigation Update Using Faceted Shape Model; Spaceborne Hybrid-FPGA System for Processing FTIR Data; FPGA Coprocessor for Accelerated Classification of Images; SiC JFET Transistor Circuit Model for Extreme Temperature Range; TDR Using Autocorrelation and Varying-Duration Pulses; Update on Development of SiC Multi-Chip Power Modules; Radio Ranging System for Guidance of Approaching Spacecraft; Electromagnetically Clean Solar Arrays; Improved Short-Circuit Protection for Power Cells in Series; Electromagnetically Clean Solar Arrays; Logic Gates Made of N-Channel JFETs and Epitaxial Resistors; Improved Short-Circuit Protection for Power Cells in Series; Communication Limits Due to Photon-Detector Jitter; System for Removing Pollutants from Incinerator Exhaust; Sealing and External Sterilization of a Sample Container; Converting EOS Data from HDF-EOS to netCDF; HDF-EOS 2 and HDF-EOS 5 Compatibility Library; HDF-EOS Web Server; HDF-EOS 5 Validator; XML DTD and Schemas for HDF-EOS; Converting from XML to HDF-EOS; Simulating Attitudes and Trajectories of Multiple Spacecraft; Specialized Color Function for Display of Signed Data; Delivering Alert Messages to Members of a Work Force; Delivering Images for Mars Rover Science Planning; Oxide Fiber Cathode Materials for Rechargeable Lithium Cells; Electrocatalytic Reduction of Carbon Dioxide to Methane; Heterogeneous Superconducting Low-Noise Sensing Coils; Progress toward Making Epoxy/Carbon-Nanotube Composites; Predicting Properties of Unidirectional-Nanofiber Composites; Deployable Crew Quarters; Nonventing, Regenerable, Lightweight Heat Absorber; Miniature High-Force, Long-Stroke SMA Linear Actuators; "Bootstrap" Configuration for Multistage Pulse-Tube Coolers; Reducing Liquid Loss during Ullage Venting in Microgravity; Ka-Band Transponder for Deep-Space Radio Science; Replication of Space-Shuttle Computers in FPGAs and ASICs; Demisable Reaction-Wheel Assembly; Spatial and Temporal Low-Dimensional Models for Fluid Flow; Advanced Land Imager Assessment System; Range Imaging without Moving Parts.

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Environmental Influence of Gravity and Pressure on Arc Tracking of Insulated Wires Investigated

Momentary short-circuit arcs between a defective polyimide-insulated wire and another conductor may thermally char (pyrolize) the insulating material. The charred polyimide, being conductive, can sustain the short-circuit arc, which may propagate along the wire through continuous pyrolization of the polyimide insulation (arc tracking). If the arcing wire is part of a multiple-wire bundle, the polyimide insulation of other wires within the bundle may become thermally charred and start arc tracking also (flash over). Such arc tracking can lead to complete failure of an entire wire bundle, causing other critical spacecraft or aircraft failures. Unfortunately, all tested candidate wire insulations for aerospace vehicles were susceptible to arc tracking. Therefore, a test procedure was designed at the NASA Lewis Research Center to select the insulation type least susceptible to arc tracking. This test procedure addresses the following three areas of concern: (1) probability of initiation, (2) probability of reinitiation (restrike), and (3) extent of arc tracking damage (propagation rate). Item 2 (restrike probability) is an issue if power can be terminated from and reapplied to the arcing wire (by a switch, fuse, or resettable circuit breaker). The degree of damage from an arcing event (item 3) refers to how easily the arc chars nearby insulation and propagates along the wire pair. Ease of nearby insulation charring can be determined by measuring the rate of arc propagation. Insulation that chars easily will propagate the arc faster than insulation that does not char very easily. A popular polyimide insulated wire for aerospace vehicles, MIL-W-81381, was tested to determine a degree of damage from an arcing event (item 3) in the following three environments: (1) microgravity with air at 1-atm pressure, (2) 1g with air at 1 atm, and (3) 1g within a 10^-6 Torr vacuum. The microgravity 1-atm air was the harshest environment, with respect to the rate of damage of arc tracking, for the 20 AWG (American Wiring Gauge) MIL-W-81381 wire insulation type . The vacuum environment resulted in the least damage. Further testing is planned to determine if the environmental results are consistent between insulation types and to evaluate the other two parameters associated with arc tracking susceptibility.

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Atomic Oxygen Fluence Monitor

This innovation enables a means for actively measuring atomic oxygen fluence (accumulated atoms of atomic oxygen per area) that has impinged upon spacecraft surfaces. Telemetered data from the device provides spacecraft designers, researchers, and mission managers with real-time measurement of atomic oxygen fluence, which is useful for prediction of the durability of spacecraft materials and components. The innovation is a compact fluence measuring device that allows in-space measurement and transmittance of measured atomic oxygen fluence as a function of time based on atomic oxygen erosion yields (the erosion yield of a material is the volume of material that is oxidized per incident oxygen atom) of materials that have been measured in low Earth orbit. It has a linear electrical response to atomic oxygen fluence, and is capable of measuring high atomic oxygen fluences (up to >10(exp 22) atoms/sq cm), which are representative of multi-year low-Earth orbital missions (such as the International Space Station). The durability or remaining structural lifetime of solar arrays that consist of polymer blankets on which the solar cells are attached can be predicted if one knows the atomic oxygen fluence that the solar array blanket has been exposed to. In addition, numerous organizations that launch space experiments into low-Earth orbit want to know the accumulated atomic oxygen fluence that their materials or components have been exposed to. The device is based on the erosion yield of pyrolytic graphite. It uses two 12deg inclined wedges of graphite that are over a grit-blasted fused silica window covering a photodiode. As the wedges erode, a greater area of solar illumination reaches the photodiode. A reference photodiode is also used that receives unobstructed solar illumination and is oriented in the same direction as the pyrolytic graphite covered photodiode. The short-circuit current from the photodiodes is measured and either sent to an onboard data logger, or transmitted to a receiving station on Earth. By comparison of the short-circuit currents from the fluence-measuring photodiode and the reference photodiode, one can compute the accumulated atomic oxygen fluence arriving in the direction that the fluence monitor is pointing. The device produces a signal that is linear with atomic oxygen fluence using a material whose atomic oxygen erosion yield has been measured over a period of several years in low-Earth orbit.

Banks, Bruce A.↗

Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

Lindholm, Fredrik A.↗

The use of FEP Teflon in solar cell cover technology

FEP plastic film was used as a cover and as an adhesive to bond cover glasses to silicon solar cells. Various anti-reflective coatings were applied to cells and subsequently covered with FEP. Short-circuit currents were measured before and after application of the coating and of the FEP. FEP bonded to seven of the nine differently coated cells, with no change in the total short circuit current in four cases.

Broder, J. D.↗

The use of FEP Teflon in solar cell cover technology

FEP plastic film was used as a cover and as an adhesive to bond cover glasses to silicon solar cells. Various anti-reflective coatings were applied to cells and subsequently covered with FEP. Short circuit currents were measured before and after application of the coating and of the FEP. FEP was bonded to seven of the nine differently coated cells, with no change in the total short circuit current in four cases.

Broder, J. D.↗

Annealing of GaAs solar cells damaged by electron irradiation

Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.

Walker, G. H.↗

Photomultiplier circuit including means for rapidly reducing the sensitivity thereof

A simple, reliable and inexpensive control circuit is described for rapidly reducing the bias voltage across one or more of the dynode stages of a photomultiplier, to substantially decrease its sensitivity to incoming light at those times where excess light intensity might damage the tube. The control circuit comprises a switching device, such as a silicon controlled rectifier (SCR), coupled between a pair of the electrodes in the tube, preferably the cathode and first dynode, or the first and second dynodes, the switching device operating in response to a trigger pulse applied to its gate to short circuit the two electrodes. To insure the desired reduction in sensitivity, two switching stages, the devices be employed between two of the electrode stages, the devices being operated simultaneously to short circuit both stages.

Mcclenahan, J. O.↗

Development and pilot line production of lithium doped silicon solar cells

The work performed over the period of September 1971 to August 1972 to develop production processes for fabrication of lithium doped P/N cells is described. The BCl3 diffusion without 02 was selected as the optimum diffusion process for fabrication of lithium doped cells. An 8-2-7 (warm up - deposition - drive-in time in minutes) diffusion schedule at 1055 C was used for the first two lots (300 cells each) delivered to JPL. Cell efficiencies ranged from 11.0 to 13.7% based on an AMO of 135.3 mW/sq cm. These high efficiencies were obtained using from 10 to 40 cells per boron diffusion; increasing the quantity beyond 40 resulted in lower outputs. At this point, the emphasis was placed on investigation of a BCl3 with 02 diffusion. Through evaluation of the effects of diffusion time and temperature, gas flow rates, and desposition plus drive-in vs. continuous deposition and no drive-in cycles, diffusion parameters were determined which produced short circuit currents of 136 + or - 4 mA for ten cells spaced along 12 in. of the diffusion boat. The quantity was increased to 60, 100, and 150 cell diffusions with no more variation in cell short circuit current than observed with 10 cells.

Payne, P. A.↗

A Discussion of the Failure of a Quad Diode Module and Efforts to Assure the Flight Spares

In 2019 the International Space Station (ISS) experienced an on on-orbit failure that affected 1 of 28 Battery Charge Discharge Units (BCDUs). Telemetry pointed to a short circuit failure of a Power Rectifier Quad Diode Module. Astronauts removed the failed unit from service which was then returned to Earth for failure analysis. The failure analysis confirmed that the quad diode module had failed short circuit. The investigation identified silver dendrites had grown on the insulated, sloped edge of the mesa semiconductor die of the failed diode and also a 2nd diode in the same quad diode module. Voids between the diode’s protective encapsulating ring and the die provided space within which dendrites were able to form and cause catastrophic failure. The NASA Engineering & Safety Center (NESC) convened a EEE Parts Sub-Team to investigate root cause and to assist with risk assessment for all of the flight diode modules (4 distinct production lots) and the flight spares (from a 5th lot). Analysis of the original diode manufacturer’s read and record screening test data identified some lots which contained diodes with parametric instabilities that could signal conditions suited for silver dendrite formation. Computed Tomography (CT) X-ray screening inspection was performed on flight spare modules to identify diodes that do not exhibit voids between the edge of die and encapsulating ring as a mitigation against dendrite formation.

Jay Brusse↗

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗

Manufacture and evaluation of Li/BCX DD cells

This project is divided into four main tasks: cell manufacture, acceptance, and lot certification of cells, performance testing of cells, and abuse testing of cells. Lithium/bromine chloride in thionyl chloride (Li/BCX) 149 DD cells (PN 3B2085-XA) were built according to the provisions of Electrochem Industries Quality Plan 17096. Acceptance and lot certification testing was performed according to NASA JSC Document EP5-83-025, Revision B. Acceptance testing included open circuit and load voltage check, visual examination, size and weight measurements, and high temperature exposure. Lot certification tests were performed for capacity performance and for performance under conditions of thermal and electrical abuse. These tests included 149 C exposure, capacity discharge, fuse check, high temperature exposure, high rate discharge, short circuit, vibration, and overdischarge testing. A quantity of 200 cells was delivered to Johnson Space Center for life test evaluation. A parametric evaluation of the capacity discharge of Li/BCX DD cells was performed over a variety of temperatures and discharge rates. This testing served to map the performance capability of the cell. Tests were also performed over a variety of electrical and thermal abuse conditions. Abuse tests included short circuit, charging, overdischarge, high temperature exposure, shock, and vibration.

Meyer, S.↗

Effects of Conformal Coat on Tin Whisker Growth

A whisker from a tin plated part was blamed for the loss of a commercial spacecraft in 1998. Although pure tin finishes are prohibited by NASA, tin plated parts, such as hybrids, relays and commercial off the shelf (COTS) parts, are something discovered to have been installed in NASA spacecraft. Invariably, the assumption is that a conformal coat will prevent the growth of, or short circuits caused by, tin whiskers. This study measures the effect a Uralane coating has on the initiation and growth of tin whiskers, on the ability of this coating to prevent a tin whisker from emerging from the coating, and on the ability to prevent shorting. A sample of fourteen brass substrates (1 inch by 4 inches by 1/16 inch) were plated by two separate processes: half of the specimens were 'bright' tin plated directly over the brass substrate and half received a copper flash over the brass substrate prior to 'bright' tin plating. Each specimen was coated on one half of the substrate with three bi-directional sprays of Uralane 5750 to a nominal thickness of 25 to 75 micrometers (1 to 3 mils). Several specimens of both types, Cu and non-Cu flashed, were placed in an oven maintained at 50 C as others' work suggests that this is the optimal temperature for whisker formation. The remaining specimens were maintained at room ambient conditions. The surfaces of each specimen have been regularly inspected using both optical (15 to 400x power) and Scanning Electronic Microscopy (SEM). Many types of growths, including needle-like whiskers, first appeared approximately three months after plating on the non-conformally coated sides of all specimens. At four months, 4 to 5 times more growth sites were observed on the coated side; however, the density of growth sites on the non-conformally coated side has since increased rapidly, and now, at one year, is about the same for both sides. The density of growth sites is estimated at 90/sq mm with 30 percent of the sites growing whiskers (needle-like forms) with the potential to cause short circuit bridging. The average growth rate of the needle-like whiskers on the non-conformally coated areas is about 130 micrometers per year with some outliers reaching 800 micrometers after one year. It is more difficult to make growth measurements under the conformal coat. As yet no whiskers have been observed to penetrate through the coating surface, however, a number of tin nodules appear on the verge of breaking through the thinner regions of the coating surface. These domes are developing sharper and sharper tips, as if a growing whisker is about to push its way through a tough skin. Our observations are that the specimens with copper flash show a much lower density of nucleation sites and significantly slower whisker growth compared to the specimens that have only bright tin plating over brass. The specimens kept at room temperature have a higher whisker density than those stored at 50 C. This is an unexpected result and does not agree with the published findings of others. All of the whiskers originate from small surface defects (thin, tiny scratches) that appear over the entire surface of each specimen.

Kadesch, Jong S.↗

Hypervelocity gun

A velocity amplifier system which uses both electric and chemical energy for projectile propulsion is provided in a compact hypervelocity gun suitable for laboratory use. A relatively heavy layer of a tamping material such as concrete encloses a loop of an electrically conductive material. An explosive charge at least partially surrounding the loop is adapted to collapse the loop upon detonation of the charge. A source of electricity charges the loop through two leads, and an electric switch which is activated by the charge explosive charge, disconnects the leads from the source of electricity and short circuits them. An opening in the tamping material extends to the loop and forms a barrel. The loop, necked down in the opening, forms the sabot on which the projectile is located. When the loop is electrically charged and the explosive detonated, the loop is short circuited and collapsed thus building up a magnetic field which acts as a sabot catcher. The sabot is detached from the loop and the sabot and projectile are accelerated to hypervelocity.

Ford, F. C.↗

Analysis of the electron-beam-induced current of a polycrystalline p-n junction when the diffusion lengths of the material on either side of a grain boundary differ

The short circuit current generated by the electron beam of a scanning electron microscope in p-n junctions is reduced by enhanced recombination at grain boundaries in polycrystalline material. Frequently, grain boundaries separate the semiconductor into regions possessing different minority carrier life times. This markedly affects the short circuit current I(sc) as a function of scanning distance from the grain boundary. It will be shown theoretically that (1) the minimum of the I(sc) in crossing the grain boundary with the scanning electron beam is shifted away from the grain boundary toward the region with smaller life time (shorter diffusion length), (2) the magnitude of the minimum differs markedly from those calculated under the assumption of equal diffusion lengths on either side of the grain boundary, and (3) the minimum disappears altogether for small surface recombination velocities (s less than 10,000 cm/s). These effects become negligible, however, for large recombination velocities s at grain boundaries. For p-type silicon this happens for s not less than 100,000 cm/s.

Von Roos, O.↗