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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

A Modified Model Dielectric Function for Analyzing Optical Spectra of InGaN Nanofilms on Sapphire Substrates

Due to a lower InN bandgap energy Eg~0.7 eV, InxGa1−xN/Sapphire epifilms are considered valuable in the development of low-dimensional heterostructure-based photonic devices. Adjusting the composition x and thickness d in epitaxially grown films has offered many possibilities of light emission across a wide spectral range, from ultraviolet through visible into near-infrared regions. Optical properties have played important roles in making semiconductor materials useful in electro-optic applications. Despite the efforts to grow InxGa1−xN/Sapphire samples, no x- and d-dependent optical studies exist for ultrathin films. Many researchers have used computationally intensive methods to study the electronic band structures Ejk→, and subsequently derive optical properties. By including inter-band transitions at critical points from Ejk→, we have developed a semiempirical approach to comprehend the optical characteristics of InN, GaN and InxGa1−xN. Refractive indices of InxGa1−xN and sapphire substrate are meticulously integrated into a transfer matrix method to simulate d- and x-dependent reflectivity RE and transmission TE spectra of nanostructured InxGa1−xN/Sapphire epifilms. Analyses of RE and TE have offered accurate x-dependent shifts of energy gaps for InxGa1−xN (x = 0.5, 0.7) in excellent agreement with the experimental data.

Talwar, Devki N. (ORCID:0000000202723195)↗
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2020

Image-enhanced bipolaron formation at organic semiconductor/electrode interfaces

We explore the image charge interaction for organic semiconductor bipolarons near a conducting interface and find that the cross term between one of the constituent charges and the image of its neighbor stabilizes the bipolaron by up to ~0.3 eV, dramatically increasing the concentration of this species near the interface. Using density functional theory calculations for the common hole transport molecule N,N'-bis(3-methylphenyl)- N,N'-diphenylbenzidine, we validate a simple point charge description of this effect and incorporate it within an interface energy level alignment model to predict the density of polarons and bipolarons near the interface. We find that the image effect greatly enhances bipolaron formation in the first few monolayers, leading to the expectation that bipolarons account for more than 1% of the total interface charge in many cases of practical interest. Furthermore, this result reinforces the notion that bipolarons are robust near the contacts of many organic semiconductor devices and thus helps to rationalize their involvement in the phenomenon of unipolar organic magnetoresistance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Charge transport in amorphous semiconductors is considerably more complicated than the process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveiling electronic properties. Here, we report gigahertz conductivity mapping in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by microwave impedance microscopy (MIM), which probes conductivity without Schottky barrier’s influence. The difference between the dc and microwave conductivities reflects the efficacy of the injection barrier in an accumulation-mode transistor. The conductivity exhibits significant nanoscale inhomogeneity in the subthreshold regime, presumably due to trapping and release from localized states. The characteristic length scale of local fluctuations, as determined by the autocorrelation analysis, is about 200 nm. Using a random-barrier model, we can simulate the spatial variation of the potential landscape, which underlies the mesoscopic conductivity distribution. Furthermore, our work provides an intuitive way to understand the charge transport mechanism in amorphous semiconductors at the microscopic level.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dielectric Screening Modulates Semiconductor Nanoplatelet Excitons

The influence of external dielectric environments is well understood for 2D semiconductor materials but overlooked for colloidally grown II–VI nanoplatelets (NPLs). In this work, we synthesize MX (M = Cd, Hg; X = Se, Te) NPLs of varying thicknesses and apply the Elliott model to extract exciton binding energies—reporting values in good agreement with prior methods and extending to less studied cadmium telluride and mercury chalcogenide NPLs. Here, we find that the exciton binding energy is modulated both by the relative effect of internal vs external dielectric and by the thickness of the semiconductor material. An analytical model shows dielectric screening increases the exciton binding energy relative to the bulk by distorting the Coulombic potential across the NPL surface. We further confirm this effect by decreasing and recovering the exciton binding energy of HgTe NPLs through washing in polarizable solvents. Our results illustrate NPLs are colloidal analogues of van der Waals 2D semiconductors and point to surface modification as an approach to control photophysics and device properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Infrared-Transparent Semiconductor Membranes for Electromagnetic Interference Shielding of Millimeter Waves

Here, it is demonstrated that single-crystalline and highly doped GaAs membranes are excellent candidates for realizing infrared-transparent shields of electromagnetic interference at millimeter frequencies. Measured optical transmittance spectra for the semiconductor membranes show resonant features between 750 and 2500 nm, with a 100% maximum transmittance. The shielding effectiveness of the membranes is extracted from measured scattering parameters between 65 and 85 GHz. Selected GaAs membranes and membranes/polyamide films exhibit shielding effectiveness ranging from 22 to 40 dB, which are suitable values to ensure the safe operation of infrared devices for commercial applications. Theoretical calculations based on a plane wave model show that the interplay of primary reflection and multiple internal reflections of the radio-frequency waves results in broadband shielding capabilities of the membrane between 10 and 300 GHz.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Coherent Spins in van der Waals Semiconductor GeS 2 at Ambient Conditions

Optically active spin defects in van der Waals (vdW) materials have emerged as versatile quantum sensors, enabling applications for a wide range of quantum phenomena in condensed matter systems. Their ease of exfoliation and compatibility with device integration make them promising candidates for future quantum technologies. Here we report the observation and room-temperature coherent control of ensemble spin defects in the high-temperature crystalline phase of germanium disulfide (β-GeS 2 ), a two-dimensional (2D) semiconductor with low nuclear spin density. The defects exhibit spin-1/2 behavior, and their dynamics can be explained by a weakly coupled spin-pair model. We implement dynamical decoupling techniques to extend the coherence time (T 2 ) by a factor of 20. Finally, we use density functional theory (DFT) calculations to estimate the structures and spin densities of two possible spin defect candidates. This work will help to expand the field of quantum sensing with spin defects in 2D materials.

2D materials↗
DOE OSTI2020

Analytic model of electron transport through and over non-linear barriers

Tunneling barriers are an essential component of electron sources, sensors, detectors, and vacuum nanoelectronics, and a pivotal factor in their performance, but the barriers themselves routinely depart from the analytic models used to model their behavior. Here, a new formalism is developed to analytically and accurately model emission through and over barriers associated with depletion layers, nanotip barriers, and MIM structures. The transmission probability for depletion layer and metal-insulator-metal (MIM) and metaloxide-semiconductor (MOS) barriers is accurately modeled as the electron energy exceeds the barrier height using approaches designed for rapid implementation demanded by simulation codes, and extensible to general barriers. The models supersede conventional thermal and field models in depletion and MIM/MOS barrier studies. Thermal-field methods are used to treat the transmission probability, and shape factor methods to treat the tunneling factor. Analytic formulae for current density are obtained. The methods ease device simulation and characterization of current-voltage relations for emerging technologically interesting barriers with better accuracy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Design principles of tandem cascade photoelectrochemical devices

Cascade photoelectrocatalysis (PEC) is a possible method to improve the selectivity of solar-driven CO 2 reduction (CO 2 R). This concept can be realized by coupling different CO 2 R catalysts to different subcells in a multijunction photovoltaic (PV) stack. Efficient implementation will require careful tuning of the photocurrents and design of the photovoltages provided by the subcells to the CO 2 R catalysts in such a way as to facilitate the target reaction. Here, we outline the design principles of the tandem PEC approach using two-step conversion of CO 2 to ethylene in aqueous electrolyte, via a CO intermediate, as a model system. To perform this reaction, the first coupled PV-catalyst component should provide 4 electrons to reduce 2 molecules of CO 2 to CO; the second component should provide 8 electrons to reduce 2 CO molecules to C 2 H 4 . Based on known CO 2 R catalysts, the overpotential required to produce CO can be less than that required to reduce it to ethylene, creating the opportunity for improved efficiency. Cascade PEC can be realized in a three-terminal tandem (3TT) configuration using III–V-semiconductor based subcells coupled to Au (produces CO intermediate) and Cu (converts CO to ethylene). The current to each catalyst can be controlled by the area of the subcell exposed to the electrolyte, and the photovoltage is determined by the materials selected and device configuration. Operating conditions are found by simulating the coupled system using the open-source circuit simulator SPICE (Simulation Program with Integrated Circuits Emphasis). We identify conditions under which a 3TT configuration can have a higher solar to chemical conversion efficiency compared to a two-terminal two-junction tandem (2T 2J) with the same absorbers and a Cu catalyst only. We also show that 3TT PEC devices can be less sensitive to variations in catalyst activity compared to 2T devices. Lastly, we discuss the applications of cascade PEC to CO 2 reduction, using different intermediates, and to other chemical networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

High-bandwidth density silicon photonic resonators for energy-efficient optical interconnects

The growth of artificial intelligence applications demands ever larger and more complex deep learning models, dominating today's—and tomorrow's—data center and high-performance computing systems. While traditional electronics are failing to keep pace with application demands, silicon photonic (SiPh) interconnects have emerged as a necessary technology to support these systems. SiPh-driven wavelength-division multiplexing (WDM) offers a particularly promising path toward supporting incredibly high-aggregate link bandwidth in a compact and efficient form factor. One of the basic building blocks of these integrated WDM interconnects is the SiPh resonator. Their inherent wavelength selectivity and compact footprint allow for efficient data transmission multiplexed across dozens of carrier wavelengths. Used as add-drop (AD) filters, SiPh resonators are critical to constructing integrated tunable wavelength-selective optical circuit switches as well as for demultiplexing the different carrier wavelengths toward independent wavelength-insensitive photodiodes in a dense wavelength-division multiplexing receiver. Resonators in the all-pass (AP) configuration are widespread as well, allowing for wavelength-selective modulation to drive aggregate link bandwidths far beyond the individual channel data rate. Unlike SiPh Mach–Zehnder modulators (MZM), resonant modulators can be driven using low, complementary metal-oxide-semiconductor drive voltages, allowing for tight co-integration between photonic integrated circuits, fabricated with larger process node technologies, and electronic integrated circuits, designed to exploit the advantages of the latest node. To push toward practical peta-scale interconnects, a comprehensive review of SiPh resonators is required, addressing bottlenecks and design constraints at both the architecture and device levels. We first describe the predominant integrated link architectures and identify their limits. We then discuss the device-level design considerations that can be made for both AD and AP configuration resonators to overcome the system level limits with novel resonator device designs. Analytical models and numerical simulation of resonators are validated by experimental measurement of devices fabricated in a commercial 300-mm foundry, showing a clear path toward volume manufacturing. The demonstrated resonant modulators and filters support the feasibility of increasing the aggregate bandwidth of resonator-driven SiPh interconnects into the peta-scale regime.

42 ENGINEERING↗
DOE OSTI2019

Gas Ingress and Egress of MEMS Multi-Chip Modules and MEMS Devices

Hermetic microcircuit packaging was the dominant method of protecting semiconductor devices in the 1960s and 1970s. After losing majority market sectors to plastic encapsulated microelectronics over the last a few decades, hermetic packaging remains the preferred method of protecting semiconductor devices for critical applications such as in military, space, and medical fields, where components and systems are required to serve for several decades. MEMS devices impose additional challenges to packaging by requiring specific internal cavity pressures to function properly or deliver the needed quality (Q) factors. In MEMS multichip modules, internal pressure requirement conflicts arise when different MEMS devices require different internal gases and pressures. The authors developed a closed-formed equation to model pressure changes of hermetic enclosures due to gas ingression. This article expands the authors mathematical model to calculate gas pressure of a MEMS multichip module package as well as those of MEMS devices inside the multichip module package. These equations are not only capable of calculating service lifetimes of MEMS devices and multi-chip modules but can also help develop MEMS device packaging strategies to extend the service life of MEMS multi-chip modules.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Unraveling radiation damage and healing mechanisms in halide perovskites using energy-tuned dual irradiation dosing

Perovskite photovoltaics have been shown to recover, or heal, after radiation damage. Here, we deconvolve the effects of radiation based on different energy loss mechanisms from incident protons which induce defects or can promote efficiency recovery. We design a dual dose experiment first exposing devices to low-energy protons efficient in creating atomic displacements. Devices are then irradiated with high-energy protons that interact differently. Correlated with modeling, high-energy protons (with increased ionizing energy loss component) effectively anneal the initial radiation damage, and recover the device efficiency, thus directly detailing the different interactions of irradiation. We relate these differences to the energy loss (ionization or non-ionization) using simulation. Dual dose experiments provide insight into understanding the radiation response of perovskite solar cells and highlight that radiation-matter interactions in soft lattice materials are distinct from conventional semiconductors. These results present electronic ionization as a unique handle to remedying defects and trap states in perovskites.

14 SOLAR ENERGY↗
DOE OSTI2025

Heating of Cs2Te photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown

The occurrence of radiofrequency (RF) breakdown limits operational electromagnetic gradients in accelerator structures. Experimental evidence often suggests that breakdown events are associated with temperature and dark current spikes on the surface of RF devices. In the past decade, there has been increased interest in unveiling the mechanism behind breakdown initiation in metal copper and copper alloys; however, efforts regarding a breakdown phenomenon in photocathode-relevant semiconductors have been more limited. In this work, we explore field-emission-assisted heating via Nottingham and Joule processes, as a possible candidate for breakdown initiation. For this, field emission from an intrinsic Cs2Te ultrathin film coated on a copper substrate was modeled within the Stratton–Baskin–Lvov–Fursey formalism, describing the processes and effects in the bulk and on the surface of a photocathode exposed to high RF electromagnetic fields. It is shown that a field-emission characteristic deviates significantly from the classical Fowler–Nordheim (FN) theory, whereby predicting that dark current is orders of magnitude lower than the one expected by FN law. Conventional pulsed heating was also found to impose negligible heating to the photocathode. Both conclusions suggest that a Cs2Te photocathode coated on a metal substrate would be insensitive to catastrophic thermal-material runaway breakdown, unlike what is observed for metal surfaces. Finally, a few unconventional breakdown candidate scenarios are identified and discussed, including thermoelastic deformation and avalanche breakdown.

Shinohara, Ryo (ORCID:0000000276995732)↗
DOE OSTI2022

Lewis acid–base pair doping of p-type organic semiconductors

Doping is required to increase the electrical conductivity of organic semiconductors for uses in electronic and energy conversion devices. The limited number of commonly used p-type dopants suggests that new dopants or doping mechanisms could improve the efficiency of doping and provide new means for processing doped polymers. Drawing on Lewis acid–base pair chemistry, we combined Lewis acid dopant B(C 6 F 5 ) 3 (BCF) with the weak Lewis base benzoyl peroxide (BPO). The detailed behavior of p-type doping of the model polymer poly(3-hexylthiophene) (P3HT) with this Lewis acid–base pair in solution was examined. Solution 19F-NMR spectra confirmed the formation of the expected counterion, as well as side products from reactions with solvent. BCF : BPO was also found to efficiently dope a range of semiconducting polymers with varying chemical structures demonstrating that the BCF : BPO combination has an effective electron affinity of at least 5.3 eV. In thin films of regioregular P3HT cast from the doped solutions, delocalized polarons formed due to the large counterions leading to a large polaron-counterion distance. At and above 0.2 eq. BCF : BPO doping, amorphous areas of the film became doped, disrupting the structural order of the films. Despite the change in structural order, thin films of regioregular P3HT doped with 0.2 eq. BCF : BPO had a conductivity of 25 S cm -1 . This study demonstrates the effectiveness of a two-component Lewis acid–base doping mechanism and suggests additional two-component Lewis acid–base chemistries should be explored.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Multiscale Electrothermal Design of a Modular Multilevel Converter for Medium-Voltage Grid-Tied Applications

As a key feature of modular multilevel converters (MMCs), a large number of semiconductor devices are employed in the converter and distributed over a stack of submodules. Each submodule has a strict temperature limit that imposes constraints on the operating range of the converter. Different loading conditions/losses in the submodules lead to unavoidable temperature variations inside the MMC, which consequently affect the system-level performance and reliability. This paper is focused on the electrothermal analysis and design of a medium-voltage silicon carbide (SiC)-based MMC system, from submodule power semiconductors to the overall MMC system integration of multiple submodules, for grid-connected applications. Loss calculations are performed to estimate the cooling requirements and aid thermal design at different levels. The performance of a forced-air cooling approach is analyzed within a numerical modeling framework. Maximum temperature of the SiC power modules is predicted using numerical tools. Thermal design of the MMC cabinet with various arrangements of air inlet(s) and outlet(s) is investigated and compared from a cooling performance perspective. A fully resolved model of the arrangement that yields optimal results is developed to accurately predict the temperature profile of the essential components in the submodules.

computational fluid dynamics↗
DOE OSTI2022

Controlling the Phase Transition in CsPbI 3 Nanowires

Cesium lead iodide (CsPbI 3 ) is a promising semiconductor with a suitable band gap for optoelectronic devices. CsPbI 3 has a metastable perovskite phase that undergoes a phase transition into an unfavorable nonperovskite phase in an ambient environment. This phase transition changes the optoelectronic properties of CsPbI 3 and hinders its potential for device applications. Therefore, it is of central importance to understand the kinetics of such instability and develop strategies to control and stabilize the perovskite phase. Here, we use ultralong CsPbI 3 nanowires as a model platform to investigate the phase transition kinetics. Our results depict the role of environmental stressors (moisture and temperature) in controlling the phase transition dynamics of CsPbI 3 , which can serve as guiding principles for future phase transition studies and the design of related photovoltaics. Furthermore, we demonstrate the controllability of phase propagation on individual nanowires by varying the moisture level and temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Epitaxially integrated III–V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect-tolerant InAs quantum dot (QD)-based lasers. Despite being below the critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III–V layers and silicon and (2) mechanical hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed “misfit dislocation trapping layer,” we leverage these mechanical hardening effects to our advantage, displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Overall, our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Probing configurational disorder in ZnGeN 2 using cluster-based Monte Carlo

ZnGeN 2 is sought as a semiconductor with comparable lattice constant to GaN and tunable band gap for integration in optoelectronic devices. Configurational disorder on the cation sublattice of ZnGeN 2 can strongly modify the electronic structure compared to the ordered material, and both ordered and disordered forms of ZnGeN 2 are candidates for light-emitting diodes and other emitters. The nonisovalent character of the disordered species (Zn 2+ and Ge 4+ ) subjects the cation ordering to strong short-range order effects. To model these effects, we use Monte Carlo (MC) simulations utilizing a cluster expansion to approximate formation enthalpy. Representative disordered configurations in 1024-atom supercells are relaxed in density functional theory calculations. From the MC structures, we extract a short-range order parameter (the N-cation coordination motif), and two long-range order parameters (Bragg-Williams and stretching parameters), and examine their correlations. We perform a thermodynamic integration to determine the mixing entropy and free energy. ZnGeN 2 exhibits a first-order phase transition with pronounced discontinuities in enthalpy and entropy, as well as in the structural order parameters. We discuss the relationship between the effective temperature used in the MC simulation and the growth temperatures in experiment in relation to the crossover from the nonequilibrium to the equilibrium growth regime. This work expands on current models of site disorder in ZnGeN 2 and provides atomic structure models with a systematic variation of the degree of cation disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗