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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

A mechanically compensated sapphire oscillator optimized for operation at 40 Kelvin

We present features for a second-generation thermomechanically compensated sapphire resonator. The new design shares the short thermal time constants characteristic of previously developed 10K and 77K CSO resonators. This, together with a thermal ballast methodology, allows effective compensation of temperature fluctuations over a wide range of time scales.

sapphire oscillator↗
NASA NTRS1996

Frequency Stability of 1x10(sup -13) in a Compensated Sapphire Oscillator Operating Above 77K

We report on the design and test of a whispering gallery sapphire resonator for which the dominant (WGH (sub n11) ) microwave mode family shows frequency-stable, compensated operation for temperatures above 77 kelvin. The resonator makes possible a new ultra-stable oscillator (USO) capability that promises performance improvements over the best available crystal quartz oscillators in a compact cryogenic package.

Compensated Sapphire Oscillator Oscillators↗
DOE OSTI2026

Machining-inducted residual strain and ductile-brittle transition in sapphire revealed by X-ray nanoprobe diffraction microscopy

Hard X-ray nanoprobe diffraction microscopy is employed to investigate machining-induced residual lattice strain in single-crystal sapphire following ultra-precision orthogonal plunge cutting. In this study, tilt-series and single-angle acquisition strategies are systematically compared to evaluate their capability for resolving lattice variations associated with the machining process. An analytical framework is developed to enable the efficient and reliable extraction of strains, which serve as strain-based indicators of changes in the dominant deformation mechanism. The measured high-dimensional strain exhibits spatial heterogeneity and systematic evolution along the cutting path, consistent with deformation-regime changes from ductile response to crack-prone behavior.

Liang, Rui↗
DOE OSTI2023

Radiation-induced negative optical nonlinearities in fused silica, sapphire, and borosilicate glass

Here, negative nonlinear absorption is reported in neutron- and gamma-irradiated high-OH content fused silica, low-OH content fused silica, sapphire, borosilicate glass, and radiation-resistant borosilicate glass irradiated to total neutron fluences of 3.4 × 10 16 n ∙ cm –2 (42 Mrad γ), 1.7 × 10 17 n ∙ cm –2 (211 Mrad γ), and 3.6 × 10 17 n ∙ cm –2 (433 Mrad γ). Nonlinear absorption coefficients were measured via Z-scan and are on the order of – (10 –14 –10 –10 ) m∙W –1 . The Z-scan also reveals a negative nonlinear index of refraction in neutron- and gamma-irradiated radiation-resistant borosilicate glass on the order of –10 –19 m 2 ∙ W –1 . Thermal annealing at temperatures up to 800 °C is shown to restore these nonlinearities to their positive unirradiated values in all four materials. All Z-scan measurements were performed at 532 nm with a nanosecond pulsed laser. The occurrence of negative nonlinearities may be attributed to the presence of metallic impurities and the resulting saturable absorption. A limited effect of photobleaching is observed in measurements and is quantified in multiple Z-scans.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Exploring the interfacial structure and crystallinity for direct growth of Mn 3 Sn(0001) on sapphire (0001) by molecular beam epitaxy

The Kagome antiferromagnet Mn 3 Sn has garnered a lot of attention due to the presence of interesting properties such as anomalous Hall effects and Nernst effects. Until now, few papers have been reported to grow using molecular beam epitaxy with a buffer layer or on other substrates. In this paper, we discuss the synthesis of crystalline Mn 3 Sn layers, prepared on Al 2 O 3 (0001) without a buffer layer using molecular beam epitaxy. The growth is monitored in-situ using reflection high energy electron diffraction and measured ex-situ using X-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. The samples were deposited at 524 ± 5 °C, with an Mn: Sn atomic flux ratio of 3.2:1 for 90 minutes. Orientation relationships between the Mn 3 Sn films and the sapphire substrates are determined from in-plane and out-of-plane measurements. Our analysis indicates that the resulting film is predominantly c−plane oriented. Lastly, the samples prepared in this way were found to be discontiguous, showing a 3-dimensional morphology. According to first-principles calculations, the Mn 3 Sn exhibits a displaced Kagome structure in the very first stages of growth, for 2ML and 4ML growth on Al 2 O 3 (0001). This result is corroborated by calculating the surface formation energies and explains the observed RHEED patterns.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Chemistry and Interfacial Structure Promoting Quasi-van der Waals Epitaxial Growth of WS 2 Nanosheets on Sapphire for Prospective Application in Field-Effect Transistors

How do chemical and structural modifications to the supporting crystal surface affect the subsequent van der Waals (vdW) or quasi(Q)-vdW epitaxial growth of 2D nanocrystals? Developing an atomic-scale picture of such an interfacial system is crucial for understanding its impact on the physical and chemical properties of the supported 2D materials. The elucidation of the interfacial structure and chemistry needed to promote the Q-vdW epitaxial growth of 2D tungsten disulfide (WS 2 ) nanocrystals contributes to the growth mechanism understanding, thus pushing forward the integration of such atomically thin semiconductors toward real field-effect transistor applications. In addition to an atomic-force microscopy top view, we showcase a combination of X-ray techniques for a top-to-bottom investigation of the complexities of the buried interface structures. Furthermore, this approach uses X-ray photoelectron spectroscopy, X-ray standing wave excited X-ray fluorescence, and crystal truncation rod scattering to produce a highly resolved chemical-state-specific 3D atomic map for the extended interface structure of WS 2 /α-Al 2 O 3 (001). Employing these detailed analysis methods, along with density functional theory to further refine the picoscale structure, we demonstrate how two different types of interface engineering during the pregrowth stage lead to significant differences in the chemical and structural modifications to the terminal surface of c-face sapphire, which in turn leads to substantial differences in the submonolayer growth of supported WS 2 2D nanocrystals in terms of lateral domain sizes, epitaxial registry, vdW gaps, and stability.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Atomic Magnetometry Using a Metasurface Polarizing Beamsplitter in Silicon-on-Sapphire

Here, we demonstrate atomic magnetometry using a metasurface polarizing beamsplitter fabricated on a silicon-on-sapphire (SOS) platform. The metasurface splits a beam that is near-resonant with the rubidium atoms (795 nm) into orthogonal linear polarizations, enabling the measurement of magnetically sensitive circular birefringence in rubidium vapor through balanced polarimetry. We incorporated the metasurface into an atomic magnetometer based on nonlinear magneto-optical rotation and measured subnanotesla sensitivity, which is limited by low-frequency technical noise and transmission loss through the metasurface. To our knowledge, this work represents the first demonstration of SOS nanophotonics for atom-based sensing and paves the way for highly integrated, miniaturized atomic sensors with enhanced sensitivity and portability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Silicon-On-Sapphire Metasurfaces Generate Arrays of Dark and Bright Traps for Neutral Atoms

We demonstrated crystalline silicon-on-sapphire (c-SOS) metasurfaces that convert a Gaussian beam into arrays of complex optical traps, including arrays of optical bottle beams that trap atoms in dark regions interleaved with bright tweezer arrays. The high refractive index and indirect band gap of crystalline silicon make it possible to design high-resolution near-infrared (λ > 700 nm) metasurfaces that can be manufactured at scale using CMOS-compatible processes. Compared with active components like spatial light modulators (SLMs) that have become widely used to generate trap arrays, metasurfaces provide an indefinitely scalable number of pixels, enabling large arrays of complex traps in a very small form factor, as well as reduced dynamic noise. To design metasurfaces that can generate three-dimensional bottle beams to serve as dark traps, we modified the Gerchberg-Saxton algorithm to enforce complex-amplitude profiles at the focal plane of the metasurface and to optimize the uniformity of the traps across the array. We fabricated and measured c-SOS metasurfaces that convert a Gaussian laser beam into arrays of bright traps, dark traps, and interleaved bright/dark traps.

Gerchberg-Saxton↗
DOE OSTI2019

Strain-stress study of Al x Ga 1–x N/AlN heterostructures on c-plane sapphire and related optical properties

This work presents a systematic study of stress and strain of Al x Ga 1-x N/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the Al x Ga 1-x N epitaxial layers exhibits compressive strain, while the alpha-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the Al x Ga 1-x N and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the Al x Ga 1-x N composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of Al x Ga 1-x N on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the alpha-axis compared to the compressive strain on the c-axis. Raman characteristics of the Al x Ga 1-x N samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain on the optical phonon energies of the epitaxial layers is also discussed

36 MATERIALS SCIENCE↗
DOE OSTI2019

Growth of 2H stacked WSe 2 bilayers on sapphire

Bilayer WSe 2 nuclei were initially grown along the atomic steps of a sapphire substrate, resembling a “graphoepitaxial mechanism” and gradually formed into overlapped 2H stacked WSe 2 bilayers.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal transport across nanoscale damage profile in sapphire irradiated by swift heavy ions

In this work, we studied the degradation of thermal conductivity in single crystal sapphire (α-Al 2 O 3 ) irradiated by 167 MeV Xe swift heavy ions (SHIs) over the multiple fluences in the range of 10 12 –10 14 ions/cm 2 . Thermal conductivity was measured primarily in the cross-plane direction using a noncontact ultrafast optical pump-probe technique called picosecond time domain thermoreflectance (TDTR). Multiple samples with variable ion fluences allowed us to probe distinct regions resulting from different regimes of microstructure evolution caused by electronic energy loss. By tuning the penetration depth of the thermal waves using different modulation frequencies, two regions with distinct conductivities were identified and the values of which were found to be consistent with phonon-mediated thermal transport models while the microstructure was confirmed by electron microscopy characterization. These damaged regions were determined to be a several micrometer thick ion track region and several tens of nanometer-thick amorphous layer present only above 5.0 × 10 13 ions/cm 2 . These results demonstrate the applicability of TDTR to resolve thermal transport behavior in SHI irradiated oxides having nonhomogeneous damage profile on a nanometer scale. The presented approach facilitates future studies aiming at resolving the impact of distinct damage resulting from electronic and nuclear stopping regimes under irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films

The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a baking and plasma pretreatment of the substrate prior to the GaN plasma-enhanced atomic layer deposition (PE-ALD). In this work, it is found that such pretreatment makes the GaN films grow coherently on sapphire substrates, following a layer-by-layer growth mechanism. The deposited GaN film shows high crystalline quality, a sharp GaN/sapphire interface, and a flat surface. The possibility of growing high-quality GaN epilayers in this way broadens the range of applications for PE-ALD in GaN-based devices.

36 MATERIALS SCIENCE↗