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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

The Impact of Back-Sputtered Carbon on the Accelerator Grid Wear Rates of the NEXT and NSTAR Ion Thrusters

A study was conducted to quantify the impact of back-sputtered carbon on the downstream accelerator grid erosion rates of the NEXT (NASA's Evolutionary Xenon Thruster) Long Duration Test (LDT1). A similar analysis that was conducted for the NSTAR (NASA's Solar Electric Propulsion Technology Applications Readiness Program) Life Demonstration Test (LDT2) was used as a foundation for the analysis developed herein. A new carbon surface coverage model was developed that accounted for multiple carbon adlayers before complete surface coverage is achieved. The resulting model requires knowledge of more model inputs, so they were conservatively estimated using the results of past thin film sputtering studies and particle reflection predictions. In addition, accelerator current densities across the grid were rigorously determined using an ion optics code to determine accelerator current distributions and an algorithm to determine beam current densities along a grid using downstream measurements. The improved analysis was applied to the NSTAR test results for evaluation. The improved analysis demonstrated that the impact of back-sputtered carbon on pit and groove wear rate for the NSTAR LDT2 was negligible throughout most of eroded grid radius. The improved analysis also predicted the accelerator current density for transition from net erosion to net deposition considerably more accurately than the original analysis. The improved analysis was used to estimate the impact of back-sputtered carbon on the accelerator grid pit and groove wear rate of the NEXT Long Duration Test (LDT1). Unlike the NSTAR analysis, the NEXT analysis was more challenging because the thruster was operated for extended durations at various operating conditions and was unavailable for measurements because the test is ongoing. As a result, the NEXT LDT1 estimates presented herein are considered preliminary until the results of future posttest analyses are incorporated. The worst-case impact of carbon back-sputtering was determined to be the full power operating condition, but the maximum impact of back-sputtered carbon was only a four percent reduction in wear rate. As a result, back-sputtered carbon is estimated to have an insignificant impact on the first failure mode of the NEXT LDT at all operating conditions.

Soulas, George C.↗
NASA NTRS2013

The Impact of Back-Sputtered Carbon on the Accelerator Grid Wear Rates of the NEXT and NSTAR Ion Thrusters

A study was conducted to quantify the impact of back-sputtered carbon on the downstream accelerator grid erosion rates of the NASA's Evolutionary Xenon Thruster (NEXT) Long Duration Test (LDT1). A similar analysis that was conducted for the NASA's Solar Electric Propulsion Technology Applications Readiness Program (NSTAR) Life Demonstration Test (LDT2) was used as a foundation for the analysis developed herein. A new carbon surface coverage model was developed that accounted for multiple carbon adlayers before complete surface coverage is achieved. The resulting model requires knowledge of more model inputs, so they were conservatively estimated using the results of past thin film sputtering studies and particle reflection predictions. In addition, accelerator current densities across the grid were rigorously determined using an ion optics code to determine accelerator current distributions and an algorithm to determine beam current densities along a grid using downstream measurements. The improved analysis was applied to the NSTAR test results for evaluation. The improved analysis demonstrated that the impact of back-sputtered carbon on pit and groove wear rate for the NSTAR LDT2 was negligible throughout most of eroded grid radius. The improved analysis also predicted the accelerator current density for transition from net erosion to net deposition considerably more accurately than the original analysis. The improved analysis was used to estimate the impact of back-sputtered carbon on the accelerator grid pit and groove wear rate of the NEXT Long Duration Test (LDT1). Unlike the NSTAR analysis, the NEXT analysis was more challenging because the thruster was operated for extended durations at various operating conditions and was unavailable for measurements because the test is ongoing. As a result, the NEXT LDT1 estimates presented herein are considered preliminary until the results of future post-test analyses are incorporated. The worst-case impact of carbon back-sputtering was determined to be the full power operating condition, but the maximum impact of back-sputtered carbon was only a 4 percent reduction in wear rate. As a result, back-sputtered carbon is estimated to have an insignificant impact on the first failure mode of the NEXT LDT1 at all operating conditions.

Soulas, George C.↗
NASA NTRS2022

Solar Wind Ion Sputtering of Sodium from Silicates Using Molecular Dynamics Calculations of Surface Binding Energies

For nearly 40 yr, studies of exosphere formation on airless bodies have been hindered by uncertainties in our understanding of the underlying ion collisional sputtering by the solar wind (SW). These ion impacts on airless bodies play an important role in altering their surface properties and surrounding environment. Much of the collisional sputtering data needed for exosphere studies come from binary collision approximation (BCA) sputtering models. These depend on the surface binding energy (SBE) for the atoms sputtered from the impacted material. However, the SBE is not reliably known for many materials important for planetary science, such as plagioclase feldspars and sodium pyroxenes. BCA models typically approximate the SBE using the cohesive energy for a monoelemental solid. We use molecular dynamics (MD) to provide the first accurate SBE data we are aware of for Na sputtered from the above silicate minerals, which are expected to be important for exospheric formation at Mercury and the Moon. The MD SBE values are ∼8 times larger than the Na monoelemental cohesive energy. This has a significant effect on the predicted SW ion sputtering yield and energy distribution of Na and the formation of the corresponding Na exosphere. We also find that the SBE is correlated with the coordination number of the Na atoms within the substrate and with the cohesive energy of the Na-bearing silicate. Our MD SBE results will enable more accurate BCA predictions for the SW ion sputtering contribution to the Na exosphere of Mercury and the Moon.

Lunar surface↗
DOE OSTI2013

Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering

Highlights: ► High-quality ZnO thin films were deposited at room temperature. ► Effect of O{sub 2} flow and RF sputtering voltages on properties of ZnO films were studied. ► O{sub 2}/Ar ratios played a key role in controlling optical properties of ZnO films. ► Photoluminescence intensity of the ZnO films strongly depended on O{sub 2}/Ar ratios. ► Crystallite size, stress and strain strongly depended on O{sub 2}/Ar ratios. - Abstract: ZnO thin films were deposited onto quartz substrates by radio frequency (RF) reactive magnetron sputtering using a Zn target. The structural and optical properties of the ZnO thin films were investigated comprehensively by X-ray diffraction (XRD), ultraviolet–visible and photoluminescence (PL) measurements. The effects of the oxygen content of the total oxygen–argon mixture and sputtering voltage in the sputtering process on the structural and optical properties of the ZnO films were studied systemically. The microstructural parameters, such as the lattice constant, crystallite size, stress and strain, were also calculated and correlated with the structural and optical properties of the ZnO films. In addition, the results showed that the crystalline quality of ZnO thin films improved with increasing O{sub 2}/Ar gas flow ratio from 2:8 to 8:2. XRD and PL spectroscopy revealed 800 V to be the most appropriate sputtering voltage for ZnO thin film growth. High-quality ZnO films with a good crystalline structure, tunable optical band gap as well as high transmittance could be fabricated easily by RF reactive magnetron sputtering, paving the way to obtaining cost-effective ZnO thin films transparent conducting oxides for optoelectronics applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Atomic insight into concurrent He, D, and T sputtering and near-surface implantation of 3C-SiC crystallographic surfaces

We present results from atomistic simulations of sputtering and near-surface implantation of concurrent He, D, and T bombardment of cubic silicon carbide (3C-SiC). This is achieved by first establishing a many-body interatomic potential parameter set to treat interactions of He and hydrogenic species in 3C-SiC informed by ab-initio calculations. To obtain sputtering yields we perform both classical molecular dynamics and binary collision approximation simulations for normal incident particles having energies ranging from 25 to 800 eV. We find that due to differences in species surface binding energy of various crystallographic surfaces in 3C-SiC, the sputtering yield of Si is significantly less than that of C, but sputtering yields show limited sensitivity to crystallographic surface orientation. An exception to this occurs when the terminating crystallographic surface plane is more rich in Si rather than C, resulting in comparable sputtering yields of Si and C. The influence of temperature on sputtering is explored and shows limited effect. Finally, the nature of implanted He, D, and T within 3C-SiC surfaces is investigated to understand implantation profiles and stability of defects.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Development of long-lived thick carbon stripper foils for high energy heavy ion accelerators by a heavy ion beam sputtering method

In the past decade, we have developed extremely long-lived carbon stripper foils of 1-50 {mu}g/cm{sup 2} thickness prepared by a heavy ion beam sputtering method. These foils were mainly used for low energy heavy ion beams. Recently, high energy negative Hydrogen and heavy ion accelerators have started to use carbon stripper foils of over 100 {mu}g/cm{sup 2} in thickness. However, the heavy ion beam sputtering method was unsuccessful in production of foils thicker than about 50 {mu}g/cm{sup 2} because of the collapse of carbon particle build-up from substrates during the sputtering process. The reproduction probability of the foils was less than 25%, and most of them had surface defects. However, these defects were successfully eliminated by introducing higher beam energies of sputtering ions and a substrate heater during the sputtering process. In this report we describe a highly reproducible method for making thick carbon stripper foils by a heavy ion beam sputtering with a Krypton ion beam.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Time-resolved temperature study in a high-power impulse magnetron sputtering discharge

The gas heating dynamics is studied in a high-power impulse magnetron sputtering discharge operating in Ar-N{sub 2} gas mixtures. The time-resolved rotational temperature analysis based on the spectral transition between the B{sup 2}{Sigma}{sub u}{sup +}-X{sup 2}{Sigma}{sub g}{sup +} energy levels in molecular nitrogen ion (N{sub 2}{sup +} First Negative Band) is undertaken for this purpose. The rotational temperature in the discharge is found to increase linearly during the plasma pulse being roughly independent on the nitrogen content in the examined range. Such a temperature increase is attributed to the bulk gas heating which is the result of collisions with the sputtered species. Two sputtered materials, Ti and W, are examined during the study. In the case of W sputtering, the gas heating is found to be more pronounced than in the Ti case, which is explained by more efficient energy exchange between the sputtered W atoms and the bulk gas atoms during the plasma on-time. The obtained temperature data are compared to the laser-induced fluorescence study of Ar metastable atoms performed recently in the same discharge in our group. The particularities related to gas thermalization as well as to validity of the utilized approach for characterization of the pulsed sputtering discharges are discussed.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2013

An (ultra) high-vacuum compatible sputter source for oxide thin film growth

A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

36 MATERIALS SCIENCE↗
DOE OSTI2011

SPUTTERING FROM A POROUS MATERIAL BY PENETRATING IONS

Porous materials are ubiquitous in the universe and weathering of porous surfaces plays an important role in the evolution of planetary and interstellar materials. Sputtering of porous solids in particular can influence atmosphere formation, surface reflectivity, and the production of the ambient gas around materials in space. Several previous studies and models have shown a large reduction in the sputtering of a porous solid compared to the sputtering of the non-porous solid. Using molecular dynamics simulations we study the sputtering of a nanoporous solid with 55% of the solid density. We calculate the electronic sputtering induced by a fast, penetrating ion, using a thermal spike representation of the deposited energy. We find that sputtering for this porous solid is, surprisingly, the same as that for a full-density solid, even though the sticking coefficient is high.

36 MATERIALS SCIENCE↗
DOE OSTI2012

High power impulse magnetron sputtering discharge

The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Improvement of electrical and optical properties of molybdenum oxide thin films by ultralow pressure sputtering method

In this work, we investigated the structural, electrical and optical properties of molybdenum oxide thin films deposited by the reactive dc magnetron sputtering method. The molybdenum oxide films were prepared at sputtering pressures ranging from 6.7 x 10{sup -1} to 6.7 x 10{sup -2} Pa. In order to promote their electrical conductivity, all the deposited MoO{sub x} films were annealed in Ar ambient at 450 deg. C for 8 h. The resistivity of the MoO{sub x} films varied from 10{sup -4} to 10{sup -2}{Omega} cm depending on the O{sub 2} content in the sputtering ambient. The lowering of the resistivity of the MoO{sub 2} films was mainly attributed to the formation of a monoclinic MoO{sub 2} polycrystalline phase. As the sputtering pressure decreased, the content of monoclinic polycrystalline MoO{sub 2} phase increased, resulting in low resistivity films. The formation of the dominant MoO{sub 2} phase at lower sputtering pressures was attributed to the stress induced crystallization. The post-deposition annealed (PDA) MoO{sub x} film, deposited at an ultralow sputtering pressure (6.7 x 10{sup -2} Pa) and O{sub 2} content of 40%, had an atomic ratio of O to Mo {approx_equal} 2.85 and was highly transparent and conductive: the transmittance in the visible wavelength range of 400-500 nm was about 73% and the resistivity was 1.05 x 10{sup -3}{Omega} cm. This result is superior to those of MoO{sub x} films epitaxially grown by the pulse laser deposition method.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Sputtering of silicon and glass substrates with polyatomic molecular ion beams generated from ionic liquids

The effect of irradiating 1-ethyl-3-methylimidazolium positive (EMIM{sup +}) or dicyanamide negative (DCA{sup –}) ion beams using an ionic liquid ion source was characterized concerning its sputtering properties for single crystalline Si(100) and nonalkaline borosilicate glass substrates. The irradiation of the DCA{sup –} ion beam onto the Si substrate at an acceleration voltage of 4 and 6 kV exhibited detectable sputtered depths greater than a couple of nanometers with an ion fluence of only 1 × 10{sup 15} ions/cm{sup 2}, while the EMIM{sup +} ion beam produced the same depths with an ion fluence 5 × 10{sup 15} ions/cm{sup 2}. The irradiation of a 4 kV DCA{sup –} ion beam at a fluence of 1 × 10{sup 16} ions/cm{sup 2} also yields large etching depths in Si substrates, corresponding to a sputtering yield of Si/DCA{sup – }= 10, and exhibits a smoothed surface roughness of 0.05 nm. The interaction between DCA{sup –} and Si likely causes a chemical reaction that relates to the high sputtering yield and forms an amorphous C-N capping layer that results in the smooth surface. Moreover, sputtering damage by the DCA{sup –} irradiation, which was estimated by Rutherford backscattering spectroscopy with the channeling technique, was minimal compared to Ar{sup +} irradiation at the same condition. In contrast, the glass substrates exhibited no apparent change in surface roughnesses when sputtered by the DCA{sup –} irradiation compared to the unirradiated glass substrates.

42 ENGINEERING↗
DOE OSTI2015

Anisotropy of sapphire single crystal sputtering

We have studied the spatial distribution of particles sputtered from the base (0001) plane of a sapphire single crystal with trigonal crystalline lattice (α-Al{sub 2}O{sub 3}) that can be considered a superposition of two hexagonal close packed (hcp) structures–the ideal sublattice of oxygen and a somewhat deformed sublattice of aluminum. It is established that the particles sputtered from the base plane of sapphire are predominantly deposited along the sides of an irregular hexagon with spots at its vertices. The patterns of spots have been also studied for sputtering of particles from the (0001) face of a zinc single crystal with the hcp lattice. The spots of sputtered Zn atoms are arranged at the vertices of concentric equilateral hexagons. In both cases, the observed anisotropy of sputtering is related to focused collisions (direct and assisted focusing) and the channeling process. The chemical composition of spots has been determined in various regions of sputtered sapphire deposition. The results are discussed in comparison to analogous earlier data for secondary ion emission from an α-Al{sub 2}O{sub 3} single crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Collision-spike sputtering of Au nanoparticles

Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For this specific case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31% of the impact energy remains in the nanoparticles after impact; the remainder is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80% of that of free nanoparticles due to the suppression of forward sputtering.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Variation in plutonium dioxide sputter yields for 1–5 keV Ar+ ions

An oxide layer with a known thickness and chemistry was grown on delta stabilized Pu and sputtered with 1–5 keV Ar+ ions over a range of incident ion angle between 22° and 72°. From the time required to remove the oxide layer, sputter yields of PuO2 were calculated. The sputter yields appear to increase with higher Ar+ ion beam energy in the range of 1–5 keV at an incident sputter ion angle of 42° and were found to increase with a decreasing angle of incidence up to 62°. The degree of oxide reduction induced during the sputter process was found to vary with the incident sputter ion angle.

Donald, Scott B.↗
NASA NTRS1972

Sputtering: A vacuum deposition method for coating material

The sputtering process is described in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and internal stresses. The strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched (cleaned) surface, and the submicroscopic particle size. An illustration is a sputtered solid film lubricant such as MoS2. Friction tests were conducted on a thin, 2000 A deg thick MoS2 film. These films are very dense and without observable pinholes, and the particle to particle cohesion is strong. Tolerances (film thickness) can be controlled to a millionth of a centimeter. Very adherent films of sputtered Teflon can be deposited in a single operation on any type of material (metal, glass, paper) and on any geometrical configuration with a dense adherent film.

Spalvins, T.↗
NASA NTRS1972

Sputtering - A vacuum deposition method for coating material.

The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

Spalvins, T.↗