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At least 127 records · Page 7

Design and development of solid state detector for SCADS

Solid state detector technology was applied to the fabrication and testing of cadmium sulfide and silicon narrow slit detector/preamplifier subassemblies. Fabrication of the silicon detector and the cadmium sulfide detectors was accomplished by utilizing cadmium sulfide cells and silicon cells. Fabrication of the preamplifiers for both silicon and cadmium sulfide slit type detectors was also carried out. The design of these preamplifiers was adjusted to ascertain that the limiting noise source of the detector/preamplifier subassembly is the detector and the input cable.

Source record↗

A solid state film transport

A solid state film transport utilizing piezoelectric motion was evaluated and found to have potential in film positioning applications. The concept is particularly useful in flight equipment where torque motors and conventional transport mechanisms are difficult to apply. A demonstration model utilizing 5-inch film was designed, tested, and evaluated. Three basic operating modes were investigated. Design goals for step size were achieved under controlled conditions. The continuous mode test results were marred by an inability to transfer efficiently the piezoceramic motion to the film itself. The design, test results, and problem areas are described.

Davis, C. M.↗

Logic controlled solid state switchgear

Logic controlled solid state circuit breakers and power transfer switches have been designed and built to demonstrate their use for 270 V dc power systems. This switchgear provides remote operation, automatic current level, and operates several orders of magnitude faster with much greater accuracy of response than conventional switchgear.

Buchanan, E.↗

Solid-state power controller

Compact, solid state, electric-power controller switches power on and off at remote load, limits current drawn by load, and shuts off (with 2- to 3- second trip time) in case of short circuit. Lightweight efficient hybrid unit operates at 28 volts dc and at maximum currents of from 3 to 2 amperes.

Fox, D. A.↗

Space-charge-limited solid-state triode

A solid-state triode is provided from a wafer of nearinstrinsic semiconductor material sliced into filaments of rectangular cross section. Before slicing, emitter and collector regions are formed on the narrow sides of the filaments, and after slicing gate regions are formed in arrow strips extending longitudinally along the midsections of the wide sides of the filaments. Contacts are then formed on the emitter, collector and gate regions of each filament individually for a single filament device, or in parallel for an array of filament devices to increase load current.

Shumka, A.↗

A new tunable solid-state laser

A tunable solid state laser system, chromium-activated forsterite (Cr3+: Mg2SiO4), which has the potential for tunability from 850-1400 nm, is introduced. The characteristics of the host crystal are examined. Laser experiments and measurements are presented, including the observation of pulsed laser action at room temperature. The possibilities of the system are also considered.

Gayen, S. K.↗

A non-Markovian model of avalanche gain statistics for a solid-state photomultiplier

A solid-state photomultiplier (SSPM) capable of continously detecting individual photons of wavelength between 0.4 and 28 microns has recently been disclosed (Petroff et al., 1987). The initial response of the SSPM to single photon is a fast, high-amplitude current pulse of between 10,000 and 100,000 electrons. A phenomenological model of the SSPM avalanche process is presented which successfully predicts the shape of the observed pulse-amplitude distribution by including small history-dependent effects on the carrier transport. The model clarifies the consequences of the electric field strength and the scattering of the electrons for the development of the avalanche in the SSPM.

Laviolette, Randall A.↗

Improved Solid-State Microanemometer

Improved solid-state microanemometer suitable for measuring flows in variety of biomedical, industrial, and other applications. Small size, unique design, and one-piece construction provides combination of short response time, structural rigidity, optimal dissipation of heat, and versatility in application. Device includes four integral sensing resistors exposed to flow measured and serves as hot-film anemometer subunits. Sensing resistors connected to external excitation-and-measurement circuits operating in any of standard hot-film-anemometer modes; constant input voltage, constant input current, or constant resistance with feedback.

Henderson, H. Thurman↗

Dual mode solid state power switch

A solid state amplifier has an output transistor stage and an input transistor stage interconnected as a Darlington circuit. An interstage transistor interconnecting the collectors of the two stages of the Darlington circuit is connected with the first stage transistor in a compound configuration. When the load current furnished by the amplifier is less than a predetermined value, the output stage operates as a simple saturated switch with its base drive current flowing through the emitter-base junction of the first stage which produces no collector current because the base-emitter junction of the interstage transistor is reverse-biased. When the load current exceeds said predetermined value, the interstage transistor begins to conduct allowing the input and output stages to operate as a Darlington amplifier and diverting a significant portion of the base drive current of the output transistor back into the load.

Maus, Louis C.↗

Method of producing ceramic distribution members for solid state electrolyte cells

A solid state electrolyte cells apparatus and method of producing is disclosed. The apparatus can be used for separating oxygen from an oxygen-containing feedstock or as a fuel cell for reacting fluids. Cells can be stacked so that fluids can be introduced and removed from the apparatus through ceramic distribution members having ports designed for distributing the fluids in parallel flow to and from each cell. The distribution members can also serve as electrodes to membranes or as membrane members between electrodes, The distribution member design does not contain any horizontal internal ports which allows the member to be thin. A method of tape casting in combination with an embossing method allows intricate radial ribs and bosses to be formed on each distribution member. The bosses serve as seals for the ports and allow the distribution members to be made without any horizontal internal ports.

Clark, Douglas J.↗

Solid state laser technology - A NASA perspective

NASA's program for developing solid-state laser technology and applying it to the Space Shuttle and Space Platform is discussed. Solid-state lasers are required to fulfill the Earth Observation System's requirements. The role of the Office of Aeronautics and Space Technology in developing a NASA tunable solid-state laser program is described. The major goals of the program involve developing a solid-state pump laser in the green, using AlGaAs array technology, pumping a Nd:YAG/SLAB crystal or glass, and fabricating a lidar system, with either a CO2 laser at 10.6 microns or a Nd:YAG laser at 1.06 microns, to measure tropospheric winds to an accuracy of + or - 1 m/s and a vertical resolution of 1 km. The procedures to be followed in order to visualize this technology plan include: (1) material development and characterization, (2) laser development, and (3) implementation of the lasers.

Allario, F.↗

Hydride-Based Interlayer for Solid-State Anode-Free Battery

Solid-state batteries (SSBs) are considered a promising approach to realizing an anode-free concept with high energy densities. However, the initial Coulombic efficiency (ICE) has remained insufficient for anode-free batteries using sulfide-based solid electrolytes (SEs). Herein, we incorporated a hydride-based interlayer, 3LiBH 4 -LiI (LBHI), between a typical sulfide SE, Li 6 PS 5 Cl, and the Cu current collector. Further, by investigating the Li plating and stripping behaviors and the (electro)chemical stability between SEs and plated Li, we demonstrated that LBHI can effectively improve interfacial stability, leading to an ICE exceeding 94% in anode-free half cells. This interlayer also improves Coulombic efficiencies and specific capacities in anode-free full cells. Furthermore, the utilization of LBHI enables one to study Li plating behaviors without interference from interfacial (electro)chemical instabilities. The analysis of stack pressure evolution during electrochemical cycling reveals that soft shorting in SSBs arises from both dendrite formation and deformation, offering insights into further optimizing solid-state anode-free batteries.

25 ENERGY STORAGE↗

X-Band, 17-Watt Solid-State Power Amplifier

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Mittskus, Anthony↗