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At least 127 records · Page 7

Protective role of silicon in the high-temperature oxidation of titanium

We investigated the oxidation of pure titanium and Ti-0.8 at.% Si at 800 ° C in Ar-O 2 and O 2 to clarify how dilute silicon additions enhance the oxidation resistance of titanium. The effect of silicon stemmed from differences in oxide growth rather than oxygen dissolution in the metal. Initially, silicon reduced outward oxide growth and completely eliminated inward growth, which we attributed to the continuous Ti 5 Si 3 layer formed at the oxide-metal interface. Furthermore, after breakdown of the Ti 5 Si 3 layer, the oxide — containing silicon — became lamellar but remained more compact and possibly slower growing than the oxide on pure titanium.

36 MATERIALS SCIENCE↗

Comparison of unirradiated and irradiated AGR-2 TRISO fuel particle oxidation response

The silicon carbide (SiC) coating in a tristructural isotropic (TRISO) particle acts as a barrier to fission product release during reactor operation and accident scenarios. Oxidation and subsequent failure of the SiC layer during a rare air ingress event is a proposed mechanism for fission product release in a high-temperature gas-cooled reactor (HTGR). Although previous oxidation studies have analyzed unirradiated TRISO particle response, this study compared the oxidation behavior of irradiated and unirradiated TRISO particles from the second Advanced Gas Reactor Fuel Development and Qualification Program irradiation experiment (AGR-2). Particles with exposed SiC were subjected to six varying oxidizing tests in the Furnace for Irradiated TRISO Testing (FITT), examined for failure fraction with the Irradiated Microsphere Gamma Analyzer (IMGA) and characterized with focused ion beam and scanning/transmission electron microscopy techniques to analyze the oxide layer. Uncorrelated unirradiated particle failures throughout the series of exposures suggests that external factors inherent to the experiment increased particle failure sensitivity. However, irradiated particle observations indicated an increased failure response at 400 h 1400 °C in both 2% and 21% O 2 atmospheres above failure associated with external factors. Oxide thickness measurements after 400 h at 1400 °C revealed a greater oxidation rate than predicted by parabolic growth, which was attributed to the increased complexity of the oxide structure at longer exposure times. Altering the atmosphere from 21% to 2% O 2 reduced the average oxide thickness by approximately 12%–14% in both irradiated and unirradiated particles at 400 h 1400 °C. Altogether, the minor variations observed between irradiated and unirradiated particles in this study led to the conclusion that unirradiated TRISO particles can be used to approximate irradiated TRISO oxidation kinetics.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Nano-engineering the material structure of preferentially oriented nano-graphitic carbon for making high-performance electrochemical micro-sensors

Direct synthesis of thin-film carbon nanomaterials on oxide-coated silicon substrates provides a viable pathway for building a dense array of miniaturized (micron-scale) electrochemical sensors with high performance. However, material synthesis generally involves many parameters, making material engineering based on trial and error highly inefficient. Here, we report a two-pronged strategy for producing engineered thin-film carbon nanomaterials that have a nano-graphitic structure. First, we introduce a variant of the metal-induced graphitization technique that generates micron-scale islands of nano-graphitic carbon materials directly on oxide-coated silicon substrates. A novel feature of our material synthesis is that, through substrate engineering, the orientation of graphitic planes within the film aligns preferentially with the silicon substrate. This feature allows us to use the Raman spectroscopy for quantifying structural properties of the sensor surface, where the electrochemical processes occur. Second, we find phenomenological models for predicting the amplitudes of the redox current and the sensor capacitance from the material structure, quantified by Raman. Our results indicate that the key to achieving high-performance micro-sensors from nano-graphitic carbon is to increase both the density of point defects and the size of the graphitic crystallites. Our study offers a viable strategy for building planar electrochemical micro-sensors with high-performance.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Synthesis, characterization, and thermodynamic study of selected K-based zeolites

Potassium-rich zeolites often occur in cementitious systems, as K{sup +} is widespread in various cementitious materials, such as Portland, blended and alkali-activated cements. The knowledge of their stability and of thermodynamic models for solid solutions with Na{sup +} and Ca{sup 2+} are critical to understand long-term development and durability in such cements. Completing previous studies on Na- and Ca-based zeolites, the current work aims to determine the thermodynamic data of 14 types of K-based zeolites, which could possibly form in cementitious systems. The zeolites were synthesized hydrothermally, exchanged with K{sup +}, and characterized thoroughly with respect to framework structures, elemental compositions, water contents, and bond variations. Their thermodynamic properties were derived from the experimental solubility data, which allowed establishing predominance diagrams in the K{sub 2}O-SiO{sub 2}-Al{sub 2}O{sub 3}-H{sub 2}O system. The K-based zeolites typically showed the lowest solubility between 0 and 100 °C, with the notable exception of Ca-gismondine and two Na-based zeolites: natrolite and Na-mordenite.

36 MATERIALS SCIENCE↗

Enhanced stability of silicon for photoelectrochemical water oxidation through self-healing enabled by an alkaline protective electrolyte

Alkaline electrolytes impede the corrosion of Si photoanodes under positive potentials and/or illumination, due to the formation of a SiO x layer that etches 2–3 orders of magnitude more slowly than Si. Hence during water oxidation under illumination, pinholes in protection layers on Si photoanodes result in the local formation of a protective, stabilizing passive oxide on the Si surface. However, operation under natural diurnal insolation cycles additionally requires protection strategies that minimize the dark corrosive etching rate of Si at pinholes. We show herein that addition of [Fe(CN) 6 ] 3- to 1.0 M KOH(aq) results in a self-healing process that extends the lifetime to >280 h of an np + -Si(100) photoanode patterned with an array of Ni catalyst islands operated under simulated day/night cycles. The self-healing [Fe(CN) 6 ] 3- additive caused the exposed Si(100) surface to etch >180 times slower than the Si etch rate in 1.0 M KOH(aq) alone. No appreciable difference in etch rate or facet preference was observed between Si(100) and Si(111) surfaces in 1.0 M KOH(aq) with [Fe(CN) 6 ] 3- , indicating that the surface conformally oxidized before Si dissolved. The presence of [Fe(CN) 6 ] 3- minimally impacted the faradaic efficiency or overpotential of p + -Si/Ni electrodes for the oxygen-evolution reaction.

25 ENERGY STORAGE↗

Effect of Silicon on High Temperature Oxidation of Fe-Cr-Si Alloys in Carbon Dioxide Environments

Supercritical carbon dioxide offers the potential for efficient and sustainable power generation. Identifying materials that can be used to construct the high temperature portions of the cycle is a barrier to developing this technology. Various Fe-Cr alloys have been identified as promising construction materials due to a favorable combination of high temperature strength, commercial availability, and cost. The effect of minor alloying elements, particularly Si, has been shown to significantly impact the oxidation and carburization processes for these alloys after relatively short duration exposures in hot carbon dioxide. The long-term impact is less understood, making it challenging to predict performance of real components that will be in service for many years. The objectives in this project are to better understand the long-term oxidation and carburization behavior of Fe-Cr alloys and the important role of Si; to enhance the existing body of literature on the long-term exposure of alloys to hot carbon dioxide; and enable lifetime predictions for future supercritical carbon dioxide power cycle components.

Menna, Valerie↗

Elucidating the role of oxidation in two-dimensional silicon nanosheets

We report a synthetic protocol that yields hydrogen-terminated 2D silicon nanosheets with greatly reduced siloxane (e.g., Si–O–Si, O x Si) content. These nanosheets displayed weak, broad photoluminescence centered near 610 nm with a low absolute photoluminescence quantum yield (as low as 0.2%). By intentionally oxidizing the nanosheets, the photoluminescence peak emission wavelength blueshifted to 510 nm, and the quantum yield increased by more than an order of magnitude to 8.5%. These results demonstrate that oxidation of 2D silicon nanosheets modulates the material's bandgap and suggests that previously reported photoluminescence properties for this material resulted, in part, from oxidation.

Essner, Jeremy B. [Iowa State Univ., Ames, IA (Uni↗

Bias-Modulated ALD of ZnO: Insights into Precursor-Surface Interactions for ZnO Films

Atomic layer deposition (ALD) is widely used to deposit conformal thin films but is often limited in the tunability of the resulting material’s properties. Substrate bias and electric fields alter precursor-surface interactions and provide means to tune material properties. To explore this, we performed zinc oxide (ZnO) ALD using diethylzinc (DEZ) and water on silicon native oxide substrates at 150 °C in a sample holder designed to create a static electrical field by biasing one plate of a parallel plate capacitor-style sample holder during deposition. ZnO films prepared in an electric field/on a biased sample holder were thinner, changed relative crystalline composition, and contained more carbon compared to samples grown in identical sample holders without bias. The thickness was independent of the magnitude of the eletric field between plates, indicating that the primary driver for the change was substrate biasing not the electric field between plates of the parallel plate capacitor-style sample holder. Density functional theory calculations showed enhanced electron migration between dissociatively adsorbed DEZ molecules and the ZnO (002) facet with increasing force from an electric field at the substrate surface, which strengthens the electronic interactions between the surface and the adsorbate. These models offer a compelling explanation for the inhibited growth, changes in the crystallinity, and increase in carbon content of films grown in an electric field/on biased plates.

Jones, Jessica C. (ORCID:0000000174754620)↗

Producing cement clinker assemblages in the system: CaO-SiO2-Al2O3-SO3-CaCl2-MgO

Highlights: • Alinite formation conditions are optimised. • Ye'elimite and alinite cannot be simultaneously produced. • Ternesite and chlormayenite are compatible at 1150 °C. • Alite is formed at a reduced temperature of 1300 °C. • Wadalite and chlorellestadite can incorporate chloride in cement clinker assemblages. The cement industry is carbon-intensive, and the valorisation of industrial side-streams/residuals for use as alternative raw materials can enable the cement industry to reduce its carbon footprint as well as promote resource efficiency. Apart from key clinker ingredients such as CaO, Al{sub 2}O{sub 3}, and SiO{sub 2}, industrial residues can also contain MgO, CaCl{sub 2}, and SO{sub 3}. Therefore, this study investigates the formation of cement clinker assemblages in the system CaO-SiO{sub 2}-Al{sub 2}O{sub 3}-SO{sub 3}-CaCl{sub 2}-MgO at temperatures ranging between 1100 and 1300 °C. The production of a clinker composed mainly of alinite and ye'elimite is first attempted; it is found that these phases cannot be simultaneously produced. Ternesite is also not compatible with alinite under the conditions studied. Wadalite is compatible with both ye'elimite and ternesite, while ternesite is also compatible with chlormayenite at 1150 °C. Additionally, the low-temperature formation of alite was also observed with the presence of CaCl{sub 2} in the raw-material mix.

36 MATERIALS SCIENCE↗

Surface SiO 2 Thickness Controls Uniform-to-Localized Transition in Lithiation of Silicon Anodes for Lithium-Ion Batteries

Silicon is a promising anode material for lithium-ion batteries because of its high capacity, but its widespread adoption has been hampered by a low cycle life arising from mechanical failure and the absence of a stable solid–electrolyte interphase (SEI). Understanding SEI formation and its impact on cycle life is made more complex by the oxidation of silicon materials in air or during synthesis, which leads to SiO x coatings of varying thicknesses that form the true surface of the electrode. Here, the lithiation of SiO 2 -coated Si is studied in a controlled manner using SiO 2 coatings of different thicknesses grown on Si wafers via thermal oxidation. SiO 2 thickness has a profound effect on lithiation: below 2 nm, SEI formation followed by uniform lithiation occurs at positive voltages versus Li/Li + . Si lithiation is reversible, and SiO 2 lithiation is largely irreversible. Above 2 nm SiO 2 , voltammetric currents decrease exponentially with SiO 2 thickness. For 2–3 nm SiO 2 , SEI formation above 0.1 V is suppressed, but a hold at low or negative voltages can initiate charge transfer whereupon SEI formation and uniform lithiation occur. Cycling of Si anodes with an SiO 2 coating thinner than 3 nm occurs at high Coulombic efficiency (CE). If an SiO 2 coating is thicker than 3–4 nm, the behavior is totally different: lithiation at positive voltages is strongly inhibited, and lithiation occurs at poor CE and is highly localized at pinholes which grow over time. As they grow, lithiation becomes more facile and the CE increases. Pinhole growth is proposed to occur via rapid transport of Li along the SiO 2 /Si interface radially outward from an existing pinhole, followed by the lithiation of SiO 2 from the interface outward.

25 ENERGY STORAGE↗

The Stability of SiO{sub 2} Fe{sub 3}O{sub 4} Nanoparticles for Uranium Extraction in Acidic Media - 20189

This comprehensive study has shown that the proposed strategy of SiO{sub 2} coating of Fe{sub 3}O{sub 4} nanoparticles (NPs) for the use of uranium (U) extraction in acidic media was successful. The breakdown of Fe{sub 3}O{sub 4} in acidic media has proven to be a challenge when applying to a nuclear waste removal scenario, leading to the dissolution of Fe{sub 3}O{sub 4} and preventing uptake of U ions in the waste. To overcome this a SiO{sub 2} passivating layer was grafted to the Fe{sub 3}O{sub 4} NPs, to which an acid stability test was conducted between pH 3 and pH 4. It has been shown via Transmission Electron Microscopy (TEM) and zeta potential measurements that the uncoated Fe{sub 3}O{sub 4} NPs exhibit rapid coagulation when exposed to acidic conditions, moving from a stable zeta potential of -44 mV to an unstable zeta potential of +6 mV. SiO{sub 2} coated Fe{sub 3}O{sub 4} on the other hand can remain stable for several hours and continue to be stable beyond that. Throughout acid exposure the zeta potential of these NPs remained at ∼ -38 mV, showing great stability. As a functionality is needed on the surface of the NPs for separation and extraction, the phosphate complex used was also tested for its acid stability. It was determined that with a constant zeta potential of ∼ -20 mV, the phosphate functionality was able to remain stable in the acidic conditions simulating the environment of certain nuclear wastes. Overall SiO{sub 2} coated (PO)x-Fe{sub 3}O{sub 4} NPs show great promise for application in separation and removal of U in acid media. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

In this work, tunneling aluminum oxide (Al 2 O 3 ) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron-doped surface. Here, these very thin Al 2 O 3 films (1.5-3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110-115 Ω –1 ) hydrophilic surfaces operating as metal-insulator-semiconductor (MIS) contacts. Emitter saturation current density values of approximately ≈57 fA cm 2 are achieved for Al 2 O 3 film thicknesses of 2 nm before metallization. At this same thickness, contact resistivity values of 33 mΩ cm 2 are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al 2 O 3 used to create these MIS structures were all performed with industrially relevant equipment on Cz wafers.

14 SOLAR ENERGY↗

Predicting CaO-(MgO)-Al2O3-SiO2 glass reactivity in alkaline environments from force field molecular dynamics simulations

In this investigation, force field-based molecular dynamics (MD) simulations have been employed to generate detailed structural representations for a range of amorphous quaternary CaO-MgO-Al{sub 2}O{sub 3}-SiO{sub 2} (CMAS) and ternary CaO-Al{sub 2}O{sub 3}-SiO{sub 2} (CAS) glasses. Comparison of the simulation results with select experimental X-ray and neutron total scattering and literature data reveals that the MD-generated structures have captured the key structural features of these CMAS and CAS glasses. Based on the MD-generated structural representations, we have developed two structural descriptors, specifically (i) average metal oxide dissociation energy (AMODE) and (ii) average self-diffusion coefficient (ASDC) of all the atoms at melting. Both structural descriptors are seen to more accurately predict the relative glass reactivity than the commonly used degree of depolymerization parameter, especially for the eight synthetic CAS glasses that span a wide compositional range. Hence these descriptors hold great promise for predicting CMAS and CAS glass reactivity in alkaline environments from compositional information.

36 MATERIALS SCIENCE↗

Investigations on the effect of current density on SiO/Si composite electrodes

An oxide layer on the surface of silicon particles is inevitable and is necessary for their application as anode materials for lithium ion batteries with high capacity and durability. However, a thick surficial oxide layer could significantly reduce the capacity of a Si anode. Here, Si nanoparticles with a thick surficial oxide layer of ~20 nm (Si@SiO x ) were fabricated through thermal oxidation and investigated electrochemically. The results revealed that very low current density is needed to activate Si@SiO x anodes during the first formation cycle. Once activated, the Si@SiO x anode can deliver reversible capacity as high as ~1000 mAh/g with low current density. Then, the Si@SiO x can be cycled at higher current densities of >700 mAh/g. Electrochemical impedance spectroscopy (EIS) shows that the lower current density results in lower charge-transfer resistance of the Si@SiO x anode, suggesting a higher degree of lithiation of the surficial oxide layer during low-current activation. EIS analysis also reveals that the lithiation of the surficial oxide is irreversible. We believe that the surface silicon oxide layer is lithiated and forms lithium silicate during the initial activation process. Lithium silicate has high conductivity and allows the lithiation/delithiation of Si core under the oxide layer during following charge and discharge.

25 ENERGY STORAGE↗

Direct Synthesis of Highly Siliceous ZnO-FAU Zeolite with Enhanced Performance in Hydrocarbon Cracking Reactions

The hydrothermal stability and catalytic activity of zeolite Y (faujasite, FAU) is highly dependent on its composition. High silicon content is often desirable for catalytic applications; however, direct synthesis of faujasite with high silicon content (Si/Al > 2.5) is nontrivial. Here, we present an organic-free synthesis of FAU-type zeolite with Si/Al = 3.4 using zinc oxide as a modifier. A combination of spectroscopy and microscopy confirm that ZnO is well-distributed within zeolite pores as extra-framework species, and the nature of these species differs from bulk ZnO and framework zinc in Zn-FAU crystals. We demonstrate that the increased Si/Al ratio leads to improved hydrothermal stability, while catalytic cracking of 1-hexene and cumene show that ZnO-FAU exhibits significantly longer lifetime compared to in-house and commercial zeolite Y. Collectively, this study presents a facile and efficient method to prepare more siliceous FAU with enhanced catalytic performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. In this report we describe the design of a nanoelectronic device, where a single nuclear spin is coherently controlled via nuclear acoustic resonance (NAR) through the local application of dynamical strain. The strain drives spin transitions by modulating the nuclear quadrupole interaction. We adopt an AlN piezoelectric actuator compatible with standard silicon metal–oxide–semiconductor processing and optimize the device layout to maximize the NAR drive. We predict NAR Rabi frequencies of order 200 Hz for a single 123Sb nucleus in a wide region of the device. Spin transitions driven directly by electric fields are suppressed in the center of the device, allowing the observation of pure NAR. Using electric field gradient-elastic tensors calculated by the density-functional theory, we extend our predictions to other high-spin group-V donors in silicon and to the isoelectronic 73Ge atom.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗