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At least 127 records · Page 7

Differentiating Between H and F or H and CN on C(III) or Si(III) Surfaces

A Sc tipped probe molecule yields a larger difference for the probe-H vs probe-F interaction energies than our previously studied, electron-rich pyridine (C5H5N) and (CH3)3PO probes. However, the electron-deficient Sc tipped probe does not eliminate the probe-nearest data neighbor interaction problem associated with the C(III) surface. The difference in the probe-H and probe-F interaction energies is smaller for Si(III) than C(III), making it more difficult to differentiate between these two atoms on Si(III). The larger lattice constant for Si(III) significantly reduces the data atom-data atom interaction energy as well as the probe-neighbor interaction energies. This means that the H/CN system which is not practical for C(III) due to the CN-CN repulsion, is possible for Si(III). The difference in the probe-H and probe-CN interaction energies is very large for the H/CN data storage system, making this the best system studied to date. This system could be used on C(III) if a hydrogen 'fence' is built around each data site, which corresponds to using only one quarter of the surface sites for data storage.

Bauschlicher, Charles W.↗

The Stellar Imager (SI)"Vision Mission"

The Stellar Imager (SI) is a "Vision" mission in the Sun-Earth Connection (SEC) Roadmap, conceived for the purpose of understanding the effects of stellar magnetic fields, the dynamos that generate them, and the internal structure and dynamics of the stars in which they exist. The ultimate goal is to achieve the best possible forecasting of solar/stellar magnetic activity and its impact on life in the Universe. The science goals of SI require an ultra-high angular resolution, at ultraviolet wavelengths, on the order of 100 micro-arcsec and thus baselines on the order of 0.5 km. These requirements call for a large, multi-spacecraft (less than 20) imaging interferometer, utilizing precision formation flying in a stable environment, such as in a Lissajous orbit around the Sun-Earth L2 point. SI's resolution will make it an invaluable resource for many other areas of astrophysics, including studies of AGN s, supernovae, cataclysmic variables, young stellar objects, QSO's, and stellar black holes. ongoing mission concept and technology development studies for SI. These studies are designed to refine the mission requirements for the science goals, define a Design Reference Mission, perform trade studies of selected major technical and architectural issues, improve the existing technology roadmap, and explore the details of deployment and operations, as well as the possible roles of astronauts and/or robots in construction and servicing of the facility.

Carpenter, Ken↗

SI: The Stellar Imager

The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

Carpenter, Kenneth G.↗

Commercialization of LARC (TradeMark) -SI Polyimide Technology

LARC(TradeMark)-SI, Langley Research Center- Soluble Imide, was developed in 1992, with the first patent issuing in 1997, and then subsequent patents issued in 1998 and 2000. Currently, this polymer has been successfully licensed by NASA, and has generated revenues, at the time of this reporting, in excess of $1.4 million. The success of this particular polymer has been due to many factors and many lessons learned to the point that the invention, while important, is the least significant part in the commercialization of this material. Commercial LARC(TradeMark)-SI is a polyimide composed of two molar equivalents of dianhydrides: 4,4 -oxydiphthalic anhydride (ODPA), and 3,3 ,4,4 -biphenyltetracarboxylic dianhydride (BPDA) and 3,4 -oxydianiline (3,4 -ODA) as the diamine. The unique feature of this aromatic polyimide is that it remains soluble after solution imidization in high-boiling, polar aprotic solvents, even at solids contents of 50-percent by weight. However, once isolated and heated above its T(sub g) of 240 C, it becomes insoluble and exhibits high-temperature thermoplastic melt-flow behavior. With these unique structure property characteristics, it was thought this would be an advantage to have an aromatic polyimide that is both solution and melt processable in the imide form. This could potentially lead to lower cost production as it was not as equipment- or labor-intensive as other high-performance polyimide materials that either precipitate or are intractable. This unique combination of properties allowed patents with broad claim coverage and potential commercialization. After the U.S. Patent applications were filed, a Small Business Innovation Research (SBIR) contract was awarded to Imtec, Inc. to develop and supply the polyimide to NASA and the general public. Some examples of demonstration parts made with LARC(TradeMark)-SI ranged from aircraft wire and multilayer printed-circuit boards, to gears, composite panels, supported adhesive tape, composite coatings, cookware, and polyimide foam. Even with its unique processing characteristics, the thermal and mechanical properties were not drastically different from other solution or meltprocessable polyimides developed by NASA. LARC(TradeMark)-SI risked becoming another interesting, but costly, high-performance material.

Bryant, Robert G.↗

Cross-calibration of Imaging Sensors using Model-based, SI-traceable Predictions of At-sensor Radiance

Many inter-consistency efforts force empirical agreement between sensors viewing a source nearly coincident in time and geometry that ensures consistency between sensors rather than obtain an SI-traceable calibration with documented error budgets. The method described here provides interconsistency via absolute radiometric calibration with defensible error budget avoiding systematic errors through prediction of at-sensor radiance for a site viewed by multiple sensors but not necessarily viewed at coincident times. The method predicts spectral radiance over a given surface site for arbitrary view and illumination angles and for any date dominated by clear-sky conditions. The foundation is a model-based, SI-traceable prediction of at-sensor radiance over selected sites based on physical understanding of the surface and atmosphere. The calibration of the ground site will include spatial, spectral, and sunview geometric effects based on satellite and ground-based data. The result is an interconsistency of hyperspectral and multispectral sensors spanning spatial resolutions from meters to kilometers all relative to the surface site rather than a single sensor. The source-centric philosophy of calibrating the site inherently accounts for footprint size mismatch, spectral band mismatch, and temporal and spatial sampling effects. The method for characterizing the test site allows its use for SI-traceable calibration of any sensor that can view the calibrated test site. Interconsistency is obtained through the traceability and error budget rather than coincident views. Such an approach to inter-consistency provides better understanding of biases between sensors as well producing more accurate results with documented SI-traceability that reduces the need for overlapping data sets.

Thome, Kurtis↗

Electrolytes with Improved Safety Developed for High Specific Energy Li-Ion Cells with Si-Based Anodes

A number of electrolyte formulations that have improved safety characteristics have been developed for use with high capacity silicon-based anodes. To improve the compatibility with Si-based anodes, a number of technical approaches have been employed, including: (1) the use of mono-fluoroethylene carbonate (FEC) in conjunction with, or in lieu of, ethylene carbonate (EC), (2) the use of high proportions of fluorinated co-solvents, (3) the use of vinylene carbonate (VC) to stabilize the Si/C electrode, and (4) the use of lithium bis(oxalato)borate (LiBOB) to improve the compatibility of the electrolyte when Si/C electrodes are used in conjunction with high voltage cathodes. Candidate electrolytes were studied in Li/Si-C and Si-C/ Li(MnNiCo)O2 (NMC) coin cells, as well as in larger Si-C/NMC three-electrode cells equipped with lithium reference electrodes. In summary, many electrolytes that contain triphenyl phosphate (TPP), which is used as a flame retardant additive up to concentrations of 15 volume percent, and possess FEC as a co-solvent have been demonstrated to outperform the all-carbonate baseline electrolytes when evaluated in Si-C/ Li(MnNiCo)O2 cells.

Silicon-Based Anode↗

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Sieg, R. M.↗

Effect of Silicon on Activity Coefficients of P, Bl, CD, SN, and AG in Liquid Fe-Si, and Implications for Differentiation and Core Formation

Cores of differentiated bodies (Earth, Mars, Mercury, Moon, Vesta) contain light elements such as S, C, Si, and O. We have previously measured small effects of Si on metal-silicate partitioning of Ni and Co [1,2], and larger effects for Mo, Ge, Sb, As [2]. The effect of Si on many siderophile elements could be an important, and as yet unquantified, influence on the core-mantle partitioning of SE. Here we report new experiments designed to quantify the effect of Si on the partitioning of Bi, Cd, Sn, Ag, and P between metal and silicate melt. The results will be applied to Earth, Mars, Mercury, Moon, and Vesta, for which we have excellent constraints on the mantle Bi, Cd, Sn, Ag, and P concentrations from mantle and/or basalt samples.

Righter, K.↗

Effect of Silicon on Activity Coefficients of P, Bi, Cd, Sn, and Ag in Liquid Fe-Si, and Implications for Core Formation

Cores of differentiated bodies (Earth, Mars, Mercury, Moon, Vesta) contain light elements such as S, C, Si, and O. We have previously measured small effects of Si on Ni and Co, and larger effects on Mo, Ge, Sb, As metal/silicate partitioning. The effect of Si on metal-silicate partitioning has been quantified for many siderophile elements, but there are a few key elements for which the effects are not yet quantified. Here we report new experiments designed to quantify the effect of Si on the partitioning of Bi, Cd, Sn, Ag, and P between metal and silicate melt. The results will be applied to Earth, Mars, Moon, and Vesta, for which we have good constraints on the mantle Bi, Cd, Sn, Ag, and P concentrations from mantle and/or basalt samples.

Righter, K.↗

Theoretical Prediction of Thermal Expansion Anisotropy for Y 2 Si 2 O 7 Environmental Barrier Coatings Using a Deep Neural Network Potential and Comparison to Experiment

Environmental barrier coatings (EBCs) are an enabling technology for silicon carbide (SiC)-based ceramic matrix composites (CMCs) in extreme environments such as gas turbine engines. However, development of new coating systems is hindered by the large design space and difficulty in predicting properties for these materials. Density Functional Theory (DFT) has successfully been used to model and predict some thermodynamic and thermo-mechanical properties of high-temperature ceramics for EBCs, although these calculations are challenging due to their high computational costs. In this work, we use machine learning to train a deep neural network potential (DNP) for Y 2 Si 2 O 7 , which is then applied to calculate thermodynamic and thermo-mechanical properties at near-DFT accuracy much faster and using less computational resources than DFT. We use this DNP to predict phonon-based thermodynamic properties of Y 2 Si 2 O 7 with good agreement to DFT and experiments. We also utilize the DNP to calculate the anisotropic, lattice direction-dependent coefficients of thermal expansion (CTEs) for Y 2 Si 2 O 7 . Molecular dynamics trajectories using the DNP correctly demonstrate accurate prediction of the anisotropy of the CTE in good agreement with diffraction experiments. In the future, this DNP could be applied to accelerate additional property calculations for Y 2 Si 2 O 7 compared to DFT or experiments.

rare earth silicates↗

Ultraviolet solar identifications based on extended absorption series observed in the laboratory spectrum of Si I

The absorption spectrum of Si I in the wavelength region between 1500 and 1900 A has been photographed at high resolution. The silicon vapor was produced in a 122-cm-long King furnace at 1800 to 2300 C. Forty-two Rydberg series have been observed from the ground state terms 3p(2)3P and 1D to terms associated with the 3pns and 3pnd configurations. All of the series from these configurations with J less than 4 have been extended with the 3pnd 3D(3) levels reaching n = 56. Numerous perturbations have been observed. This laboratory work has provided the basis for extending the identification of silicon lines in the solar spectrum. Nearly all lines found in the laboratory spectrum are also found in rocket spectrograms of the solar chromosphere. More than 300 lines have been attributed to Si I. The excellent correlation between laboratory and solar Si I lines is illustrated.

Moore, C. E.↗

Interaction of metal layers with polycrystalline Si

Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

Nakamura, K.↗

A comparison of GaAs and Si hybrid solar power systems

Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

Heinbockel, J. H.↗

Effects of diffusion and mass flows on C IV and Si IV lines formed in the solar atmosphere

A model for the transition region is derived from an initial interpretation of EUV observations, assuming ionization equilibrium and constant elemental abundance with height. The effects of diffusion and mass flows are then included in the initial model and the emergent profiles of several C IV and Si IV lines are computed. It is found that diffusion and mass flows have a strong effect on both the emergent intensity and spectral shape of these lines. Diffusion acts to deplete the transition region of heavy ions to an extent which depends on the detailed temperature and density structure. The net effect is a weighting of the coronal emission relative to that in the transition. On the basis of the results, it is suggested that the downflows observed in the network in lines of C IV and Si IV could be due to gravitational settling of the ions following their injection, via diffusion, into the corona from spicules. When flows are superposed on the basic diffusion model, the rapid change in elemental abundance characteristic of the model is virtually eliminated and the coronal contribution to the emission in C IV and Si IV lines becomes negligible relative to that in the transition region. Flows have a strong effect on the computed line intensities and introduce large asymmetries into the line shapes.

Roussel-Dupre, R.↗

A classification system for O-B2 stars based on the Si IV and C IV resonance lines

Low-dispersion ultraviolet spectra from Skylab Experiment S-019 are used to explore the variations of Si IV and C IV line strengths with temperature and luminosity. These considerations lead to a classification system in which the Si/C ratio is used to discriminate luminosity among the O stars and temperature among the O9-B2 stars of lower luminosity. Stars falling in these two regimes may be distinguished either by the presence of C IV emission or on the basis of C IV absorption strength. The log(Si IV/C IV) vs C IV diagram is proposed as a primary tool in such a classification system. The rapid variation in the Si IV/C IV ratio from less than 1/10 at O9 to greater than 10 at B1.5 for luminosity class III-V stars appears to be an especially useful criterion for the temperature classification of stars in this spectral range.

Henize, K. G.↗

IUE observations of Si and C lines and comparison with non-LTE models

Classical model atmosphere techniques are applied to analyze IUE spectra, and to determine abundances, effective temperatures and gravities. Measurements of the equivalent widths and other properties of the line profiles of 24 photospheric lines of Si II, Si III, Si IV, C II, C III and C IV are presented in the range of 1175-1725 A for seven B and two O stars. Observed line profiles are compared with theoretical profiles computed using non-LTE theory and models, and using line-blanketed model atmospheres. Agreement is reasonably good, although strong lines are calculated to be systematically stronger than those observed, while the reverse occurs for weak lines, and empirical profiles have smaller wings than theoretical profiles. It is concluded that the present theory of line formation when used with solar abundances, represents fairly well observed UV photospheric lines of silicon and carbon ions in the atmospheres of main sequence stars of types B5-O9.

Kamp, L. W.↗

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Yeh, Y. C. M.↗