Effects of electron irradiation on n on p silicon solar cells.
Electron irradiation effects upon physical, electrical, optical and thermal characteristics of n on p silicon solar cell
ELECTRON RADIATION↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Interaction of lithium with impurities and defects in silicon.
Defects in silicon p-n solar cells with Li diffused N region produced by electron irradiation and spontaneously annealed at room temperature interpreted as Li ions
RADIATION EFFECT↗
Capabilities of the Natural Environments Branch at NASA's Marshall Space Flight Center
The Natural Environment Branch at NASA s Marshall Space Flight Center (MSFC) has the responsibility to provide engineering support to programs and projects in natural environments. The Natural Environments Branch (EV13) is responsible for natural environments definitions, modelling, database development and effects assessments. EV13 personnel develop requirements for flight projects and provide operational support for space and launch vehicle systems. To accomplish these responsibilities, Branch . personnel have developed modelling and analytical tools which include planetary atmospheres, meteoroids, ionizing radiation, plasmas and ionospheres, magnetic and gravitational fields, spacecraft charging modelling, and radiation effects on electronic parts. NASA s Meteoroid Environment Office is operated within the EV13 and provides meteoroid engineering models and shower forecasts to spacecraft designers and operators. This paper will describe the capabilities within the Natural Environments Effects Branch including; examples of natural environment definitions, radiation transport, output from the Global Reference Atmosphere Models for Earth, Venus, Mars, Titan, and Neptune), recent NASCAP 2K results from solar sail modelling, and meteor stream models
Edwards, David L.↗
Analysis of long-term ionizing radiation effects in bipolar transistors
The ionizing radiation effects of electrons on bipolar transistors have been analyzed using the data base from the Voyager project. The data were subjected to statistical analysis, leading to a quantitative characterization of the product and to data on confidence limits which will be useful for circuit design purposes. These newly-developed methods may form the basis for a radiation hardness assurance system. In addition, an attempt was made to identify the causes of the large variations in the sensitivity observed on different product lines. This included a limited construction analysis and a determination of significant design and processes variables, as well as suggested remedies for improving the tolerance of the devices to radiation.
Stanley, A. G.↗
Direct comparison of gamma, electron beam and X-ray radiation effects on the polymers of a pulsed lavage device
Gamma radiation used for sterilization of medical devices is challenged by cobalt-60 supply and commercial capacity. To maintain a robust radiation sterilization marketplace for the rapidly growing single-use medical device industry, investigation of potential alternatives to gamma technology, such as electron beam (e-beam) and X-ray technology, is critical. In this work, we directly compare the effects of radiation source and absorbed dose level on the polymeric materials and function of a commercial pulsed lavage device used for wound care. Product functionality, polymer mechanical, and polymer optical properties were evaluated using standard methods and input from the device manufacturer. Test results show that functionality of the product was not inhibited by radiation although the battery in the device exposed to X-ray exhibited greater voltage loss compared to batteries in products exposed to gamma or e-beam. Statistically significant differences between gamma and e-beam exposure and between gamma and X-ray exposure were also observed for product appearance in terms of yellowness index of several of the polymers considered. Overall, the results of this study support the viability of e-beam and X-ray radiation technologies as alternatives to cobalt-60 gamma technology for sterilization of the single-use pulsed lavage medical device investigated.
Electron beam↗
On the use of Lineal Energy Measurements to Estimate Linear Energy Transfer Spectra
This paper examines the error resulting from using a lineal energy spectrum to represent a linear energy transfer spectrum for applications in the space radiation environment. Lineal energy and linear energy transfer spectra are compared in three diverse but typical space radiation environments. Different detector geometries are also studied to determine how they affect the error. LET spectra are typically used to compute dose equivalent for radiation hazard estimation and single event effect rates to estimate radiation effects on electronics. The errors in the estimations of dose equivalent and single event rates that result from substituting lineal energy spectra for linear energy spectra are examined. It is found that this substitution has little effect on dose equivalent estimates in interplanetary quiet-time environment regardless of detector shape. The substitution has more of an effect when the environment is dominated by solar energetic particles or trapped radiation, but even then the errors are minor especially if a spherical detector is used. For single event estimation, the effect of the substitution can be large if the threshold for the single event effect is near where the linear energy spectrum drops suddenly. It is judged that single event rate estimates made from lineal energy spectra are unreliable and the use of lineal energy spectra for single event rate estimation should be avoided.
Adams, David A.↗
A simple model of space radiation damage in GaAs solar cells
A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.
Wilson, J. W.↗
Analysis and Simulations of Space Radiation Induced Single Event Effects and Transients
Spacecraft electronic are affected by the space radiation environment. Among the different types of radiation effects that can affect spacecraft electronics is the single event transient (SET). The space environment is responsible for many of the single event transients which can upset the performance of the spacecraft avionics hardware. In this chapter we first explore the origins of single event transients, then explore the modeling of a single event transient in digital and analog circuit. The chapter also addresses the concept of crosstalk that could develop among digital circuits in the present of a SET event. The chapter also provides a discussion of SET hardening. We then provide a discussion concerning propagation of a single event transient event at the local, subsystem, and system level in a spacecraft using two different models, one of the models developed by the author, known as the state transition model. The final goal of the chapter is to provide a qualitatively methodology for assessing single event transients and its effects so that spacecraft avionics engineers can develop either hardware or software countermeasures in their designs. SET is not a form of electromagnetic interference (EMI) in its origin, but semantically SET is very similar to EMI because they are both caused a current source not previously accounted for. SET has the same effects as EMI and it can cause interference problems in electronic circuits via multiple coupling mechanisms similar to EMI, and therefore makes such circuits incompatible.
Perez, Reinaldo J.↗
Effects of Electrons, Protons, and Ultraviolet Radiation on Thermophysical Properties of Polymeric Films
The response of coated thin polymer films to ultraviolet (UV), electron and proton radiation simultaneously has been evaluated, with selected measurements in situ. Exposure was intended to simulate the electron and proton radiation environment near the Earth-Sun Lagrangian points (LI and L2) for five years and approximately 1000 equivalent solar hours (ESH) UV. These orbital environments are relevant to several potential missions such as the Next Generation Space Telescope and Geomagnetic Storm Warning, both of which may use thin film based structures for a sunshade and solar sail, respectively. The thin film candidates (12.5 micrometers thick) consisted of commercially available materials (Kapton(R) E, HN, Upilex(R) S, CP-1, CP-2, TOR-RC, and TOR-LMBP) that were metalized on one side with vapor deposited aluminum. All of the films are aromatic polyimides, with the exception of TORLMBP, which is a copoly(arylene ether benzimidazole). The films were exposed as second surface mirrors and the effects of the exposure on solar absorptance, thermal emittance, and tensile properties were determined. The in situ changes in solar absorptance from Kapton(R) and Upilex(R) were less than 0. 1, whereas the solar absorptance of TOR and CP films increased by more than 0.3 without saturating. The thermal emittance measurements also showed that the Kapton(R) and Upilex(R) materials increased only 1-2%, but the remaining materials increased 5-8%. Based on tensile property measurements made in air following the test, the failure stress of every type of polymer film decreased as a result of irradiation. The polymers most stable in reflectance, namely Upilex(R) and Kapton(R), were also the strongest in tension before irradiation, and they retained the greatest percentage of tensile strength. The films less stable in reflectance were also weaker in tension, and lost more tensile strength as a result of irradiation. The apparent failure strain (as a percent of original gage length) of every type of polymer film except TOR-RC, decreased as a result of irradiation.
Russell, Dennis A.↗
Spectral Analyses and Radiation Exposures from Several Ground-Level Enhancement (GLE) Solar Proton Events: A Comparison of Methodologies
Several methods for analyzing the particle spectra from extremely large solar proton events, called Ground-Level Enhancements (GLEs), have been developed and utilized by the scientific community to describe the solar proton energy spectra and have been further applied to ascertain the radiation exposures to humans and radio-sensitive systems, namely electronics. In this paper 12 GLEs dating back to 1956 are discussed, and the three methods for describing the solar proton energy spectra are reviewed. The three spectral fitting methodologies are EXP [an exponential in proton rigidity (R)], WEIB [Weibull fit: an exponential in proton energy], and the Band function (BAND) [a double power law in proton rigidity]. The EXP and WEIB methods use low energy (MeV) GLE solar proton data and make extrapolations out to approx.1 GeV. On the other hand, the BAND method utilizes low- and medium-energy satellite solar proton data combined with high-energy solar proton data deduced from high-latitude neutron monitoring stations. Thus, the BAND method completely describes the entire proton energy spectrum based on actual solar proton observations out to ~10 GeV. Using the differential spectra produced from each of the 12 selected GLEs for each of the three methods, radiation exposures are presented and discussed in detail. These radiation exposures are then compared with the current 30-day and annual crew exposure limits and the radiation effects to electronics.
Atwell, William↗
Electron irradiation effects on the optical properties of Hf- and Zn-doped β -Ga 2 O 3
Optical and electrical properties of Hf- and Zn-doped β-Ga 2 O 3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga 2 O 3 :Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr 3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga 2 O 3 :Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga 2 O 3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies.
36 MATERIALS SCIENCE↗
Computationally guided experimental validation of divacancy defect formation in 4H-SiC
Recent research into solid-state qubits for quantum information science has focused on optically addressable spin defects such as the negatively charged nitrogen-vacancy center in diamond and the neutrally charged divacancy (VV) in 4H-SiC as scalable quantum sensors and networking qubits. Within this context, direct investigations of the structural origin and defect formation dynamics of a sub-set of the VV center in 4H-SiC remain lacking. Here, we take a systematic experimental approach guided by predictions from first-principles simulations to gain a thorough mechanistic understanding of the VV defect formation and control in 4H-SiC. We study the effect of annealing time and temperature on VV formation in high-purity semi-insulating 4H-SiC samples following electron irradiation. Three different temperatures (1123, 1273, and 1473 K) and annealing duration (from 0.5 to 72 h) are chosen to explore VV formation in different regions. We find that samples annealed at 1273 K give the highest VV-related photoluminescence (PL) intensities, in agreement with the prediction from first-principles calculations. Furthermore, the logarithmic dependence of VV-related PL intensities on the annealing duration at 1273 K indicates that 1273 K provides sufficient thermal energy for silicon vacancy migration but not for VV migration. Together, these results suggest that efficient VV formation occurs above the V Si migration temperature and below the VV migration threshold.
74 ATOMIC AND MOLECULAR PHYSICS↗
Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing
Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons in the dose range of 10 12 –10 16 cm -2 and annealed at different temperatures up to 1450°C. Lifetimes and diffusion coefficients are extracted using two pump–probe techniques based on free-carrier absorption and transient-grating principles and then correlated with the corresponding defect evolution from spectroscopic measurements. Furthermore, the neutral monovacancy is revealed as the main carrier recombination center in the as-irradiated diamond, providing bipolar carrier lifetimes of a few nanoseconds at the highest irradiation dose. Carrier-capture cross sections are reduced during annealing as vacancies aggregate into divacancies at ≤1000°C and extended vacancy clusters at 1450°C.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Charged particle radiation damage in semi- conductors, x. the energy dependence of electron damage in silicon
Energy dependence of electron radiation damage in silicon solar cells
SOLAR CELL↗
Correlation of electrical conductivity and radiation-induced free radical concentration in poly/ethylene terephthalate/ and related compounds
Gamma and ultraviolet radiation effects on electronic properties of polyethylene terephthalate and related compounds
Ballard, L. F.↗
Space radiation studies at the White Sands Missile Range Fast Burst Reactor
The operation of the White Sands Missile Range Fast Burst Reactor is discussed. Space radiation studies in radiobiology, dosimetry, and transient radiation effects on electronic systems and components are described. Proposed modifications to increase the capability of the facility are discussed.
Delapaz, A.↗
A survey of space radiation effects
The effects of space radiation and its significance for space missions, as they increase in scope, duration, and complexity are discussed. Type of radiation hazard may depend on location or on special equipment used. It is emphasized that it is necessary to search for potential radiation problems in the design stage of a mission. Problem areas such as radiation damage to solar cells and the revolutionary advances are discussed. Radiation effect to electronics components other than solar cells, and several specialized areas such as radioactivity and luminescence are also examined.
Hill, C. W.↗
Space environmental effects on graphite-epoxy compressive properties and epoxy tensile properties
This study characterizes the effects of electron radiation and temperature on a graphite-epoxy composite material. Compressive properties of the T300/934 material system were obtained at -250 F (-157 C), room temperature, and 250 F (121 C). Tensile specimens of the Fiberite 934 epoxy resin were fabricated and tested at room temperature and 250 F (121 C). Testing was conducted in the baseline (nonirradiated) and irradiated conditions. The radiation exposure was designed to simulate 30 year, worst-case exposure in geosynchronous Earth orbit. Mechanical properties tended to degrade at elevated temperature and improve at cryogenic temperature. Irradiation generally degraded properties at all temperatures.
Fox, Derek J.↗