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At least 127 records · Page 7

Effect of electron flux on radiation damage in GaAs solar cells

The objective of this work was to evaluate the effect of electron flux and temperature on radiation damage in GaAs solar cells. The defect levels and the power ratio of the GaAs solar cells under various irradiation conditions are compared. In a 200 C continuous annealing experiment, the GaAs solar cells which were irradiated at a flux of 2 x 10 to the 9th e/sq cm s suffered less power degradation than the cells which were irradiated at the same temperature at a higher flux of 4 x 10 to the 10th e/sq cm s. After the continuous annealing experiment, a single-step post annealing at 200 C was performed for 40 hr on these irradiated cells. An additional improvement in power recovery was observed only on those cells irradiated at the high flux of 4 x 10 to the 10th e/sq cm s. DLTS data indicate that the defect density decreases with lower electron flux. Both of these observations strongly suggest that the continuous annealing in GaAs cells can be effective at temperatures as low as 150 C, or even less in a space environment such as geosynchronous orbit.

Loo, R. Y.↗

Radiation damage of germanium detectors

Energetic particles can produce interstitial-vacancy pairs in a crystal by knocking the atoms from their normal positions. Detectors are unique among semiconductor devices in depending on very low concentrations of electrically active impurities, and also on efficient transport of holes and electrons over relatively large distances. Because the dense regions of damage produced by energetic particles may result in donors and/or acceptors, and also provide trapping sites for holes and electrons, detectors are very sensitive to radiation damage. In addition to these effects occurring within the detector, radiation may also change the characteristics of the exposed surfaces causing unpredictable effects on the detector leakage current. Radiation-induced surface degradation has rarely, if ever, been observed for germanium detectors. The possibility of minimizing hole trapping in charge collection by the use of a high-purity germanium coaxial detector configured with the p (+) contact on the coaxial periphery is discussed.

Pehl, R. H.↗

Computer simulation of radiation damage in gallium arsenide

A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.

Stith, John J.↗

Radiation Damage Workshop report

The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium arsenide solar cells are addressed with reference to radiation damage. In general, it is concluded that diagnostic sensitivities and material purities are basic to making significant gains in end-of-life performance and thermal annealability. Further, GaAs material characterization is so sketchy that a well defined program to evaluate such material for solar cell application is needed to maximize GaAs cell technology benefits.

Rahilly, W. P.↗

Novel Technology of Non-Contact Real-Time Radiation Damage Sensor for High Power Targets

High-power proton beams planned for forthcoming long-baseline neutrino experiments will subject solid targets to unprecedented radiation damage, threatening reliability and increasing costs. To address this challenge, we are building a real-time, non-contact sensor that tracks damage by measuring broadband laser reflectivity changes from the target surface. A low-power super-continuum Class 3B laser illuminates the sample inside a vacuum test chamber while a high-resolution fiber-coupled spectrometer captures S- and P-polarized light; spectral shifts reveal defect-driven variations in optical constants. My internship goal is to design, build, and commission this prototype by implementing a laser-safety interlock and light shield, integrating remote-operation cameras, and fabricating modular 3-D-printed mounts that enable tool-free swaps without disturbing alignment. The laser, spectrometer, and vacuum chamber have been delivered; interlock hardware, cameras, and mounts are in final assembly, and leak testing of the chamber is underway. Upcoming work will focus on initial calibration of the sensor and executing first beam-irradiation studies.

Pumarino, Rafael↗

Molecular Data for a Biochemical Model of DNA Radiation Damage: Electron Impact Ionization and Dissociative Ionization of DNA Bases and Sugar-Phosphate Backbone

As part of the database for building up a biochemical model of DNA radiation damage, electron impact ionization cross sections of sugar-phosphate backbone and DNA bases have been calculated using the improved binary-encounter dipole (iBED) model. It is found that the total ionization cross sections of C3'- and C5'-deoxyribose-phospate, two conformers of the sugar-phosphate backbone, are close to each other. Furthermore, the sum of the ionization cross sections of the separate deoxyribose and phosphate fragments is in close agreement with the C3'- and C5'-deoxyribose-phospate cross sections, differing by less than 10%. Of the four DNA bases, the ionization cross section of guanine is the largest, then in decreasing order, adenine, thymine, and cytosine. The order is in accordance with the known propensity of oxidation of the bases by ionizing radiation. Dissociative ionization (DI), a process that both ionizes and dissociates a molecule, is investigated for cytosine. The DI cross section for the formation of H and (cytosine-Hl)(+), with the cytosine ion losing H at the 1 position, is also reported. The threshold of this process is calculated to be 17.1 eV. Detailed analysis of ionization products such as in DI is important to trace the sequential steps in the biochemical process of DNA damage.

Dateo, Christopher E.↗

Radiation damage effects in beryllium for next generation neutrino beam targetry (Final Technical Report)

Current and future high-power accelerators put severe requirements on materials used for target and beam windows and target facilities have been recognized as a critical challenge in development of future particle accelerators. In accelerators, window and target materials are exposed to extreme conditions, which include bombardment with very high energy protons (1- 100 GeV) and thermomechanical shock waves. Radiation can cause direct damage in the material, and it leads to production of transmutation products (especially helium), both phenomena having a potential adverse effect on the stability and durability of the target/window material. At high enough temperatures, He can aggregate to form gas bubbles, which in turn cause significant dimensional changes (swelling), enable easy crack propagation, and eventually cause failure by fracture. On the other hand, if the temperature is too low, radiation damage accumulates in the form of internal defects (e.g., dislocations), leading to hardening and a decreased ductility of the material. In this project, we will focus on beryllium since it is considered to be one of the candidate materials for beam windows and targets in the next-generation proton accelerators, e.g., the Long Baseline Neutrino Facility (LBNF). Radiation effects in Be have been studied in the context of nuclear fusion reactor applications. However, key differences exist between reactor and accelerator conditions, including neutron vs. proton irradiation, continuous vs. pulsed beam flux, much higher energies of bombarding particles in accelerators, and higher operating temperatures for typical reactors. For example, the impact of beam pulsing on the radiation damage and the He bubble kinetics is largely unknown. While results obtained on Be from fusion research might not be directly transferrable to understanding target materials, there is an opportunity to bring state-of-the-art tools from materials research in nuclear reactors to aid design of target and beam window materials in high-power accelerators. To this end, the overarching goal of this project are to develop an experimentally-validated computational framework capable of predicting radiation damage evolution in beryllium relevant to beam window and target conditions, focusing on He bubble formation and growth as a function of irradiation temperature. Our model will be based on the cluster dynamics formalism, where size distribution of defects and He bubbles is simulated as a function of time, temperature, and radiation dose. Parameters for the model will be taken from published experiments and from high-fidelity atomistic simulations proposed in this project. In addition, we will carry out a series of targeted ex-situ and in-situ dual-beam experiments using low-energy protons to provide critical data for validation of the model on the effects of radiation on He clustering, He bubble distribution, and dislocation loop density/size in proton irradiated Be.

36 MATERIALS SCIENCE↗

The effect of radiation damage on the light yield and uniformity of candidate plastic scintillator tiles for the CMS hadron calorimeter upgrade

A study has been performed to understand the effects of radiation damage on various plastic scintillator tiles considered for a possible upgrade of the hadron calorimeter of the CMS detector. Measurements were made with unirradiated tiles and with tiles that had been irradiated in the CMS collision hall to a dose of 44 kGy. Results are presented for the tiles of different shapes in terms of the energy spectrum, efficiency as a function of the position at which each tile was hit, as well as light yield. All the tiles showed a light reduction of up to about 50%. The tiles with the shape currently used in the CMS detector did not see increased non-uniformity of light collection, while a significant disuniformity was observed for the tiles considered as alternatives.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

Garlick, G. F. J.↗

Study of radiation damage and structure of Luna 16 sample particles using high-resolution electron microscopes

Using an electron scanning microscope and a high voltage microscope, a study was made of the radiation damage and structure of micron sized grains and grains separated from the 200-mesh fraction of the L-16-19 surface material sample. Then the structural features were compared with those found by studying with the same techniques grains separated from 20 different samples of lunar dust taken from the Apollo 11, Apollo 12, Apollo 14, and Apollo 15 collections. The L-16-19 sample is similar to the most intensely irradiated samples returned to earth by Apollo craft.

Borg, J.↗

Electron Radiation Damage of (alga) As-gaas Solar Cells

Solar cells (2 cm by 2 cm (AlGa) As-GaAs cells) were fabricated and then subjected to irradiation at normal incidence by electrons. The influence of junction depth and n-type buffer layer doping level on the cell's resistance to radiation damage was investigated. The study shows that (1) a 0.3 micrometer deep junction results in lower damage to the cells than does a 0.5 micrometer junction, and (2) lowering the n buffer layer doping density does not improve the radiation resistance of the cell. Rather, lowering the doping density decreases the solar cell's open circuit voltage. Some preliminary thermal annealing experiments in vacuum were performed on the (AlGa)As-GaAs solar cells damaged by 1-MeV electron irradiation. The results show that cell performance can be expected to partially recover at 200 C with more rapid and complete recovery occurring at higher temperature. For a 0.5hr anneal at 400 C, 90% of the initial power is recovered. The characteristics of the (AlGa)As-GaAs cells both before and after irradiation are described.

Loo, R.↗

Origin of reverse annealing in radiation-damaged silicon solar cells

The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.

Weinberg, I.↗

Effects of radiation damage on the silicon lattice

Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.

Dumas, Katherine A.↗

Space Plasma Ion Processing of the Lunar Soil: Modeling of Radiation-Damaged Rim Widths on Lunar Grains

Chemically and microstructurally complex altered rims around grains in the finest size fraction (<20 micron) of the lunar regolith are the result of multi-stage processes involving both solar ion radiation damage and nanoscale deposition of impact or sputter-derived vapors. The formation of the rims is an important part of the space weathering process, and is closely linked to key changes in optical reflectance and other bulk properties of the lunar surface. Recent application of field-emission scanning transmission electron microscope techniques, including energy dispersive X-ray spectral imaging, is making it easier to unravel the "nano-stratigraphy" of grain rims, and to delineate the portions of rims that represent Radiation-Amorphized (RA) host grain from overlying amorphous material that represents vapor/sputter deposits. For the portion of rims formed by host grain amorphization (henceforth called RA rims), we have been investigating the feasibility of using Monte Carlo-type ion-atom collision models, combined with experimental ion irradiation data, to derive predictive numerical models linking the width of RA rims to the grain s integrated solar ion radiation exposure time.

Chamberlin, S.↗