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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Extreme ultraviolet microscope characterization using photomask surface roughness

We demonstrate a method for characterizing the field-dependent aberrations of a full-field synchrotron-based extreme ultraviolet microscope. The statistical uniformity of the inherent, atomic-scale roughness of readily-available photomask blanks enables a self-calibrating computational procedure using images acquired under standard operation. We characterize the aberrations across a 30-um field-of-view, demonstrating a minimum aberration magnitude of smaller than λ/21 rms averaged over the center 5-um area, with a measurement accuracy better than λ/180 rms. The measured field variation of aberrations is consistent with system geometry and agrees with prior characterizations of the same system. In certain cases, it may be possible to additionally recover the illumination wavefront from the same images. Our method is general and is easily applied to coherent imaging systems with steerable illumination without requiring invasive hardware or custom test objects; hence, it provides substantial benefits when characterizing microscopes and high-resolution imaging systems in situ.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Discovery of extreme, roughly daily superflares on the recurrent nova V2487 Oph

ABSTRACT V2487 Oph is a recurrent nova with detected eruptions in 1900 and 1998. Startlingly, V2487 Oph shows flares, called ‘Superflares’, with up to 1.10 mag amplitude, fast rises of under one-minute, always with an initial impulsive spike followed by a roughly exponential tail, typically one-hour durations, and with random event times averaging once-per-day. The typical flare energy E is over 1038 erg, while the yearly energy budget is 1041 erg. V2487 Oph Superflares obey three relations; the number distribution of flare energies scales as E−2.34 ± 0.35, the waiting time from one flare to the next is proportional to E of the first event, and flare durations scale as E0.44 ± 0.03. Scenarios involving gravitational energy and nuclear energy fail to satisfy the three relations. The magnetic energy scenario, however, can explain all three relations. This scenario has magnetic field lines above the disc being twisted and amplified by the motions of their footprints, with magnetic reconnection releasing energy that comes out as Superflare light. This exact mechanism is already well known to occur in white light solar flares, in ordinary M-type flare stars, and in the many Superflare stars observed all across the H-R diagram. Superflares on Superflare stars have rise times, light-curve shapes, and durations that are very similar to those on V2487 Oph. So we conclude that the V2487 Oph Superflares are caused by large-scale magnetic reconnection. V2487 Oph is now the most extreme Superflare star, exhibiting the largest known flare energy (1.6 × 1039 erg) and the fastest occurrence rate.

Schaefer, Bradley E.↗
DOE OSTI2021

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Negative magnetoresistances (NMRs) have been widely observed in two-dimensional electron gases (2DEGs). However, their origins are under debate. Here, we report on NMRs in the 2DEG in AlGaN/GaN heterostructures, aiming to uncover their origins by utilizing electric field gating. We systematically measured the magnetoresistances in magnetic fields up to 12 T and at temperatures between 3 and 260 K and observed NMRs over a wide range of temperatures from 3 to 170 K, which become more pronounced with decreasing temperature. We conducted electric field gating experiments to correlate the occurrence of NMRs with the relationship between electron mobility and density. The latter is governed by defect scattering sources in the sample and can be theoretically modeled. Comparison of the measured electron mobility and electron density relationship with theory reveals that interface roughness scattering plays a crucial role in obtaining large NMRs. Our work demonstrates that electric field gating provides a means not only to tune the values of NMRs but also to uncover their mechanisms.

2-dimensional systems↗
DOE OSTI2023

A Micro-scale Numerical Investigation of Internal and Interfacial Void Defects in Adhesive on Failure Behavior of Adhesively-Bonded Materials with Rough Surfaces

This paper studied the effects of air void defects on the failure behavior of adhesively-bonded materials under global shear via micro-scale computational modeling. The numerical results indicated that interfacial void defects can largely facilitate interfacial debonding of a weaker adherend/adhesive interface under shear. However, this is not the case for a stronger adherend/adhesive interface, showing the reduction on the nominal shear strength of an adhesive joint is mainly due to internal void defects. The reduced bonding performance due to voids can be improved by leveraging an appropriate surface roughness. This preliminary investigation is a first step to better understand the micro-mechanics of interfacial failure in the adhesion of a roughened/patterned adherend via surface modification(s) and an adhesive, and also shows the importance of minimizing interfacial void defects in particular at a weaker adherend/adhesive interface via different techniques.

Qiao, Yao↗
DOE OSTI2021

Scaling of atomic layer etching of SiO 2 in fluorocarbon plasmas: Transient etching and surface roughness

Fabricating sub-10 nm microelectronics places plasma processing precision at atomic dimensions. Atomic layer etching (ALE) is a cyclic plasma process used in semiconductor fabrication that has the potential to remove a single layer of atoms during each cycle. In self-limiting ideal ALE, a single monolayer of a material is consistently removed in each cycle, typically expressed as EPC (etch per cycle). In plasma ALE of dielectrics, such as SiO 2 and Si 3 N 4 , using fluorocarbon gas mixtures, etching proceeds through deposition of a thin polymer layer and the process is not strictly self-terminating. As a result, EPC is highly process dependent and particularly sensitive to the thickness of the polymer layer. In this paper, results are discussed from a computational investigation of the ALE of SiO 2 on flat surfaces and in short trenches using capacitively coupled plasmas consisting of a deposition step (fluorocarbon plasma) and an etch step (argon plasma). We found that ALE performance is a delicate balance between deposition of polymer during the first half cycle and etching (with polymer removal) during the second half cycle. In the absence of complete removal of the overlying polymer in each cycle, ALE may be transient as the polymer thickness grows with each cycle with a reduction in EPC until the thickness is too large to enable further etching. Small and statistical amounts of polymer left from a previous cycle can produce statistical variation in polymer thickness on the next cycle, which in turn can lead to a spatially dependent EPC and ALE roughness. Based on synergy between T i (sputtering time) and T p (passivation time), dielectric ALE can be described as having three modes: deposition, roughening surface (transitioning to etch-stop), and smooth surface with steady-state EPC.

Materials Science↗
DOE OSTI2023

Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness

A new approach to atomic layer etching (ALE) has been demonstrated, and its application to 4H-SiC is reported here. By pulsing only the DC bias for an Ar/Cl2 inductively coupled plasma-reactive ion etching system, the etch cycle duration is reduced by more than an order of magnitude relative to conventional ALE processes. Gas flows are not changed throughout the ALE process. With this process protocol, we achieved an etch rate of 2.48±0.09 Å/cycle with 6 s cycles, an RMS surface roughness (Rq) of 0.83±0.08 Å, and an ALE synergy value of S = 99%. The parameters explored within this ALE process demonstrate effective subangstrom smoothening of 4H-SiC surfaces and is well-suited for a variety of classical and quantum device nanofabrication.

42 ENGINEERING↗
DOE OSTI2023

Effects of additively manufactured surface roughness on small diameter plenums with multiple side discharges for high temperature gas turbine blade cooling applications

Combined heat and power (CHP) applications have significant environmental and economic benefits that are consistent with the goals of the U.S. Department of Energy (DOE). One area that is currently being studied includes the potential benefits of CHP turbine operation at higher turbine inlet temperatures. Internal cooling concepts enabled by additive manufacturing (AM) are of primary interest. Here, the effectiveness of internal cooling is hindered by many factors such as velocity distribution of the cooling air to the hot surface considering impingement cooling. To simulate cooling air exiting from a series of orifices for internal cooling in an airfoil, a straight smooth wall tubing with multiple side discharging orifices is used and compared to additively manufactured tubing (Ti6Al4V Grade 23) with orifice size and spacing as well as inner and outer diameters identical to the smooth wall tubing. Similar to flow discharging form perforated pipes, the flow discharged from individual orifices along the tubes in this study is found to be nonuniformly distributed, and the horizontal (axial direction) momentum can be observed from the experimental data. Discharge velocities have been measured with two-dimensional (2D) particle imaging velocimetry (PIV) and single element hot wire anemometry. Numerical analysis has also been conducted to predict the velocity distributions along the orifices in the smooth wall and additive manufacturing (AM) tubing, which are inherited with surface roughness. Numerical and measured results in this study are compared, presented, and discussed.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

The Role of Phytoplankton Biomacromolecules in Controlling Ocean Surface Roughness

Satellite altimetric data routinely map sea surface topography by measuring the ocean return signal. One source of altimeter measurement contamination occurs when the radar ocean backscatter becomes unusually large, a situation termed a Sigma-0 bloom. Past research suggests Sigma-0 blooms are associated with weak wind and natural surface slick conditions where capillary waves at the air–sea interface are suppressed. To date, no explicit connection between these conditions and Sigma-0 bloom presence has been provided. Using a series of simplified equations, our reduced model determines capillary wave heights from estimates of planktonic carbon concentrations and regional wind speed. Our results suggest that the radar signal reflection increases as capillary wave height decreases. This relationship depends on surfactant concentration, surfactant composition, and wind speed. Model sensitivity analysis indicates that the interface reflectivity depends on biological activity and wind speed. Our proposed simplified model provides a method to identify potential Sigma-0 bloom regions. We conclude that because of the demonstrated impact of biological surfactants on ocean roughness, it is necessary to consider the biological activity, i.e., phytoplankton bloom events, when interpreting signals from radar altimetry and when developing ocean hydrology models.

54 ENVIRONMENTAL SCIENCES↗