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The code is a python package that implements a one-step model to estimate quantum efficiency of photoemission from solid state surfaces. The analytical formulation is based on the approach proposed in Phys Rev B 95, 075439 (2017). This code extends that formalism from a model Hamiltonian to the calculation of quantum efficiency from the electronic states derived from solid-state quantum mechanical calculations obtained using the VASP code.
Understanding the factors controlling radiative and non-radiative transition rates for charge transfer states in organic systems is important for applications ranging from organic photovoltaics (OPV) to lasers and LEDs. Here we explore the role of charge-transfer (CT) energetics, lifetimes, and photovoltaic properties in the limit of very slow non-radiative rates by using a model donor/acceptor system with photoluminescence dominated by thermally activated delayed fluorescence (TADF). This blend exhibits an extremely high photoluminescence quantum efficiency (PLQY = ~22%) and comparatively long PL lifetime, while simultaneously yielding appreciable amounts of free charge generation (photocurrent external quantum efficiency EQE of 24%). In solar cells, this blend exhibits non-radiative voltage losses of only ~0.1 V, among the lowest reported for an organic system. Notably, we find that the non-radiative decay rate, k nr , is on the order of 10 5 s -1 , approximately 4–5 orders of magnitude slower than typical OPV blends, thereby confirming that high radiative efficiency and low non-radiative voltage losses are achievable by reducing k nr . Furthermore, despite the high radiative efficiency and already comparatively slow k nr , we find that k nr is nevertheless much faster than predicted by Marcus–Levich–Jortner two-state theory and we conclude that CT-local exciton (LE) hybridization is present. Our findings highlight that it is crucial to evaluate how radiative and non-radiative rates of the LE states individually influence the PLQY of charge-transfer states, rather than solely focusing on the PLQY of the LE. This conclusion will guide material selection in achieving low non-radiative voltage loss in organic solar cells and high luminescence efficiency in organic LEDs.
Vanadium-doped SiC is under study for high-power photoconductive switches and is receiving increased attention as a potential material system for quantum computing, as the V can act as a quantum emitter at telecom wavelengths. Knowledge of the defect-mediated electronic transition pathways from sub-bandgap illumination in this material with low absorption and multi-photon and multi-path transition probability is important in optimizing quantum efficiency. Herein, the optical transitions of vanadium-doped SiC for two polytypes as a function of dopant concentration using a total internal reflection (TIR) geometry are examined. Furthermore, normalized quantum efficiency is reported and correlated with both dopant concentrations (V, N, B, and Al) measured by secondary ion mass spectroscopy (SIMS) and absorption measurements. Although both polytypes respond well to 532 nm light, efficiency at longer wavelengths does not correlate 1:1 with absorption coefficient and strongly depends on the polytype and net background co-dopant concentration. This has important implications for efficient excitation of both carriers for optoelectronics and for the use of V as a quantum emitter.
Superconducting nanowire single-photon detectors (SNSPDs) offer high-quantum-efficiency and low-dark-count-rate single-photon detection. In a growing number of cases, large magnetic fields are being incorporated into quantum microscopes, nanophotonic devices, and sensors for nuclear and high-energy physics that rely on SNSPDs, but superconducting devices generally perform poorly in large magnetic fields. Here, we demonstrate robust performance of amorphous SNSPDs in magnetic fields of up to ±6 T with a negligible dark-count rate and unchanged quantum efficiency at typical bias currents. Critically, we also show that the SNSPD can be used as a magnetometer with a sensitivity of better than 100μT/√Hz and as a thermometer with a sensitivity of 20μK/√Hz at 1 K. Thus, a single-photon detector integrated into a quantum device can be used as a multifunctional quantum sensor capable of describing the temperature and magnetic field on chip simply by varying the bias current to change the operating modality from single-photon detection to thermometry or magnetometry.
Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr -1 m -2 . These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.
The use of an intense ultrashort laser pulse to induce electron polarization has been proposed in existing literature. Utilizing the Python programming language, a code has been developed to recreate the local constant crossed field approximation (LCFA) with the aim of determining values for transverse polarization given a nonzero initial polarization. It has been shown that over multiple laser shots, lower values of the quantum efficiency parameter are associated with higher transverse polarization output, yet require a greater number of shots to attain maximal polarization. Moreover, the quantum efficiency parameter has been rede fined as a function of intensity for Ti:sapphire laser necessary to induce polarization in the Electron-Ion Collider.
Triplet fusion upconversion has potential applications in solar cells, photoredox catalysis, additive manufacturing and bioimaging. However, solid-state upconversion systems have struggled to measure up to their solution-phase counterparts, often requiring enormous optical power densities to operate at the maximum efficiency. Here we substantially improve the performance of upconversion films through excitation with surface plasmons that propagate along a planar silver-film interface, leading to an absorption enhancement that reduces the intensity threshold I th by a factor of 19 and enhances the external quantum efficiency by a factor of 17. From this, we achieve I th values as low as 3.4 mW cm −2 and an external quantum efficiency up to 0.094%. To demonstrate real-world viability, we couple the upconversion film to plasmons generated by the near-field of excitons in an organic light-emitting diode. As a result, this scheme is then used to fabricate a white-emitting organic light-emitting diode where blue emission sources from plasmon-excited upconversion, achieving a high colour rendering index of 86.2 and setting precedent for blue emission in the absence of high-energy polarons or triplets.
113 MHz SRF gun utilized CsK 2 Sb and Na 2 KSb cathodes, which were irradiated with a pulsed green laser with a wavelength of 0.53 microns. The drive laser generated 78 kHz pulses with an acousto-optic modulator selecting the desired number of pulses reaching the cathode. The operator can select the aperture size, defining the laser spot diameter on the cathode, and the power level, which is controlled by a rotating polarizer. The laser power reaching the cathode can be measured with a meter based on a photodiode. The quantum efficiency (QE) of a photocathode serves as a primary indicator of its state. Small QE renders the cathode unusable when the desired bunch charge cannot be achieved. Strong variations in the quantum efficiency on the cathode surface might lead to the growth of the beam emittance due to the space charge effects. We have created a routine to measure the distribution of the QE on the cathode. The operator selects the aperture size, the central spot location, and the scan ranges for both planes. The scan starts from the central spots and proceeds along a spiral-like trajectory, making N rounds. The number of rounds can be chosen, and the total number of measured points is (2N+1) 2 . The laser spot movement is shown in Fig. 1.
Quantum information processing demands efficient quantum light sources (QLS) capable of producing high-fidelity single photons or entangled photon pairs. Single epitaxial quantum dots (QDs) have long been proven to be efficient sources of deterministic single photons; however, their production via molecular-beam epitaxy presents scalability challenges. Conversely, colloidal semiconductor QDs offer scalable solution processing and tunable photoluminescence, but suffer from broader linewidths and unstable emissions. This leads to spectrally inseparable emission from exciton (X) and biexciton (XX) states, complicating the production of single photons and triggered photon pairs. Here, in this work, we demonstrate that colloidal semiconductor quantum shells (QSs) achieve significant spectral separation (∼75–80 meV) and long temporal stability of X and XX emissive states, enabling the observation of exciton-biexciton bunching in colloidal QDs. Our low-temperature single-particle measurements show cascaded XX-X emission of single photon pairs for over 200 s, with minimal overlap between X and XX features. The X-XX distinguishability allows for an in-depth theoretical characterization of cross-correlation strength, placing it in perspective with photon pairs of epitaxial counterparts. These findings highlight a strong potential of semiconductor quantum shells for applications in quantum information processing.
Resonant Inelastic X-ray Scattering (RIXS) is a powerful spectroscopic technique to study quantum properties of materials in the bulk. A novel variant of RIXS, called 2D RIXS, enables concurrent measurement of the scattered X-ray spectrum for a wide range of input energies, improving on the typically low throughput of 1D RIXS. In the soft X-ray domain, 2D RIXS demands an X-ray camera system with small pixels, large area, high quantum efficiency and low noise to limit the false detection rate in long duration exposures. We designed and implemented a 7.5 Megapixel back-illuminated CMOS detector with 5 μm pixels and high quantum efficiency in the 200–1,000 eV X-ray energy range for the QERLIN 2D RIXS spectrometer at the Advanced Light Source. The QERLIN beamline and detector are currently in commissioning. The camera noise from in-situ 3 s long dark exposures is 7e - or less and the leakage current is 6.5 × 10 -3 e - /(pixel ∙ s). For individual 500 eV X-rays, the expected efficiency is greater than 75% and the false detection rate is ~1 × 10 -5 per pixel.
Pixelated High Rate Picosecond Photon Detectors (HRPPDs) by Incom Inc. are promising photosensors for use in Ring Imaging CHerenkov (RICH) detectors, where a high gain, sub-mm position resolution and sub-100ps timing resolution are required in a single photon mode. Quantum Efficiency (QE) has been measured for the first batch of EIC HRPPDs both by Incom and EIC research groups at Jefferson Lab and Brookhaven Lab, with peak values at ∼365 nm typically exceeding 30%. Furthermore, in this study, we present a first direct measurement of Photon Detection Efficiency being equal to (17.1 ± 0.1 [stat] ± 0.3 [sys])% at 398.6 nm, for a pixel near the center of HRPPD, in a photoelectron pulse counting mode using a picosecond diode laser. HRPPD QE at the same spot and at the same wavelength was evaluated to be (24.4 ± 0.1 [stat] ± 0.3 [sys])%, leading to a Collection Efficiency estimate of (70.3 ± 1.6)%, which is consistent with the expectations.
Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.
Photosynthesis achieves near unity light-harvesting quantum efficiency yet it remains unknown whether there exists a fundamental organizing principle giving rise to robust light harvesting in the presence of dynamic light conditions and noisy physiological environments. Here, we present a noise-canceling network model that relates noisy physiological conditions, power conversion efficiency, and the resulting absorption spectra of photosynthetic organisms. Using light conditions in full solar exposure, light filtered by oxygenic phototrophs, and light filtered under seawater, we derived optimal absorption characteristics for efficient solar power conversion. We show how light-harvesting antennae can be tuned to maximize power conversion efficiency by minimizing excitation noise, thus providing a unified theoretical basis for the observed wavelength dependence of absorption in green plants, purple bacteria, and green sulfur bacteria.
Here, a recombination and exciton loss mechanism is reported in organic solar cells involving energy transfer between charge transfer (CT) excitons and polarons, impacting photocurrent generation, particularly in the near-infrared where polaronic transitions typically reside. This process sets a low-energy cut-off in the external quantum efficiency spectrum of an excitonic donor/acceptor interface, determined by the low-energy polaron absorption peak and the CT state reorganization energy. Furthermore, this process explains the deviation from unity and bias dependence of the CT state's internal quantum efficiency at low photon energies. This process is demonstrated in a variety of systems and it is hypothesized that CT state to polaron energy transfer recombination may be responsible for a share of nonradiative recombination in all organic photovoltaics and can explain numerous experimentally observed device trends regarding photocurrent generation and energy losses. Overall, this work enhances the understanding of photophysical processes in organic materials and allows the design of systems that can avoid this recombination pathway.
We control surface recombination in the mixed-cation, mixed-halide perovskite, FA0.83Cs0.17Pb(I0.85Br0.15)3, by passivating nonradiative defects with the polymerizable Lewis base (3-aminopropyl)trimethoxysilane (APTMS). We demonstrate average minority carrier lifetimes >4 µs, nearly single exponential monomolecular photoluminescence decays, and high external photoluminescence quantum efficiencies (>20%, corresponding to ~97% of the maximum theoretical quasi-Fermi-level splitting) at low excitation fluence. We confirm both the composition and valence band edge position of the FA0.83Cs0.17Pb(I0.85Br0.15)3 perovskite using multi-institutional, cross-validated, X-ray photoelectron spectroscopy and UV photoelectron spectroscopy measurements. We extend the APTMS surface passivation to higher bandgap double-cation (FA and Cs) compositions (1.7, 1.75, and 1.8 eV) as well as the widely used triple-cation (FA, MA, and Cs) composition. Finally, we demonstrate that the average surface recombination velocity decreases from ~1000 to ~10 cm/s post APTMS passivation for FA0.83Cs0.17Pb(I0.85Br0.15)3. Our results demonstrate that surface-mediated recombination is the primary nonradiative loss pathway in many methylammonium (MA)-free mixed-cation mixed-halide films with a range of different bandgaps, which is a problem observed for a wide range of perovskite active layers and reactive electrical contacts. Our study also provides insights to develop passivating molecules that help reduce surface recombination in MA-free mixed-cation mixed-halide films and indicates that surface passivation and contact engineering will enable near-theoretical device efficiencies with these materials.
Fast deposition of thin films is essential for achieving low-cost, high throughput phosphorescent organic light emitting diode (PHOLED) production. In this work, we demonstrate rapid and uniform growth of semiconductor thin films by organic vapor phase deposition (OVPD). A green PHOLED comprising an emission layer (EML) grown at 50 Å/s with bis[2-(2-pyridinyl-N)phenyl-C](acetylacetonato)iridium(III) (Ir(ppy)2(acac)) doped into 4,4 bis(N-carbazolyl)-1,1zolylld (CBP) exhibits a maximum external quantum efficiency of 20 ± 1%. The morphology, charge transport properties, and radiative efficiency under optical and electrical excitation of the PHOLED EML are investigated as functions of the deposition rate via both experimental and theoretical approaches. The EML shows no evidence for gas phase nucleation of the organic molecules at deposition rates as high as 50 Å/s. However, the roll-off in quantum efficiency at high current progressively increases with deposition rate due to enhanced triplet-polaron annihilation. The roll-off results from accumulation of stress within the PHOLED EML that generates a high density of defect states. Here, the defects, in turn, act as recombination sites for triplets and hole polarons, leading to enhanced triplet-polaron annihilation at high current. We introduce a void nucleation model to describe the film morphology evolution that is observed using electron microscopy.
The quantum efficiency of micro-light emitting diodes (micro-LEDs) is lower than that of large area LEDs. This efficiency reduction is typically attributed to the nonradiative Shockley–Read–Hall recombination at the surface defects and current leakage through the sidewall region without a clear distinction between these effects. In this work, we attempt to find out which of these phenomena is most critical for the reduced efficiency of micro-LEDs. This has been done by mapping electroluminescence (EL) and photoluminescence (PL) and measuring PL dynamics in blue GaN micro-LEDs fabricated by dry etching. It has been found that in the as-etched device, the EL intensity is much lower than in devices with KOH etching and atomic layer deposition of SiO 2 . This effect is especially pronounced close to the sidewalls. On the other hand, PL decay times are similar in as-etched and passivated devices, both in their center and at the sidewalls. This allows concluding that the main mechanism of the reduced efficiency of micro-LEDs fabricated by dry etching is the current leakage in the sidewall region and not the nonradiative recombination. The KOH etching has been found to be the most efficient means to eliminate the current leakage.
Two-dimensional perovskites that could be regarded as natural organic-inorganic hybrid quantum wells (HQWs) are promising for light-emitting diode (LED) applications. High photoluminescence quantum efficiencies (approaching 80%) and extremely narrow emission bandwidth (less than 20 nm) have been demonstrated in their single crystals; however, a reliable electrically driven LED device has not been realized owing to inefficient charge injection and extremely poor stability. Furthermore, the use of toxic lead raises concerns. Here, we report Sn(II)-based organic-perovskite HQWs employing molecularly tailored organic semiconducting barrier layers for efficient and stable LEDs. Utilizing femtosecond transient absorption spectroscopy, we demonstrate the energy transfer from organic barrier to inorganic perovskite emitter occurs faster than the intramolecular charge transfer in the organic layer. Consequently, this process allows efficient conversion of lower-energy emission associated with the organic layer into higher-energy emission from the perovskite layer. Thus, this greatly broadened the candidate pool for the organic layer. Incorporating a bulky small bandgap organic barrier in the HQW, charge transport is enhanced and ion migration is greatly suppressed. We demonstrate a HQW-LED device with pure red emission, a maximum luminance of 3466 cd m -2 , a peak external quantum efficiency up to 3.33%, and an operational stability of over 150 h, which are significantly better than previously reported lead-free perovskite LEDs.