Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Photodiodes”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Performance Dependences of Multiplication Layer Thickness for InP/InGaAs Avalanche Photodiodes Based on Time Domain Modeling

InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

Xiao, Yegao↗
NASA NTRS2005

Passivation of MBE grown InGaSb/InAs superlattice photodiodes

We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

molecular beam↗
NASA NTRS2006

In Orbit Performance of Si Avalanche Photodiode Single Photon Counting Modules in the Geoscience Laser Altimeter System on ICESat

Si avalanche photodiode (APD) single photon counting modules (SPCMs) are used in the Geoscience Laser Altimeter System (GLAS) on Ice, Cloud, anti land Elevation Satellite (ICESat), currently in orbit measuring Earth surface elevation and atmosphere backscattering. These SPCMs are used to measure cloud and aerosol backscatterings to the GLAS laser light at 532-nm wavelength with 60-70% quantum efficiencies and up to 15 millions/s maximum count rates. The performance of the SPCMs has been closely monitored since ICESat launch on January 12, 2003. There has been no measurable change in the quantum efficiency, as indicated by the average photon count rates in response to the background light from the sunlit earth. The linearity and the afterpulsing seen from the cloud and surface backscatterings profiles have been the same as those during ground testing. The detector dark count rates monitored while the spacecraft was in the dark side of the globe have increased almost linearly at about 60 counts/s per day due to space radiation damage. The radiation damage appeared to be independent of the device temperature and power states. There was also an abrupt increase in radiation damage during the solar storm in 28-30 October 2003. The observed radiation damage is a factor of two to three lower than the expected and sufficiently low to provide useful atmosphere backscattering measurements through the end of the ICESat mission. To date, these SPCMs have been in orbit for more than three years. The accumulated operating time to date has reached 290 days (7000 hours). These SPCMs have provided unprecedented receiver sensitivity and dynamic range in ICESat atmosphere backscattering measurements.

Sun, X.↗
NASA NTRS2007

Design of Low Power CMOS Read-Out with TDI Function for Infrared Linear Photodiode Array Detectors

A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of 1uA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiode in a cell if detected as faulty. Simulations are shown that verify the circuit that is currently in fabrication in 0.5ym CMOS technology.

Vizcaino, Paul↗
NASA NTRS2004

Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

indium compounds↗
NASA NTRS2007

Photodiode Preamplifier for Laser Ranging With Weak Signals

An improved preamplifier circuit has been designed for processing the output of an avalanche photodiode (APD) that is used in a high-resolution laser ranging system to detect laser pulses returning from a target. The improved circuit stands in contrast to prior such circuits in which the APD output current pulses are made to pass, variously, through wide-band or narrow-band load networks before preamplification. A major disadvantage of the prior wide-band load networks is that they are highly susceptible to noise, which degrades timing resolution. A major disadvantage of the prior narrow-band load networks is that they make it difficult to sample the amplitudes of the narrow laser pulses ordinarily used in ranging. In the improved circuit, a load resistor is connected to the APD output and its value is chosen so that the time constant defined by this resistance and the APD capacitance is large, relative to the duration of a laser pulse. The APD capacitance becomes initially charged by the pulse of current generated by a return laser pulse, so that the rise time of the load-network output is comparable to the duration of the return pulse. Thus, the load-network output is characterized by a fast-rising leading edge, which is necessary for accurate pulse timing. On the other hand, the resistance-capacitance combination constitutes a lowpass filter, which helps to suppress noise. The long time constant causes the load network output pulse to have a long shallow-sloping trailing edge, which makes it easy to sample the amplitude of the return pulse. The output of the load network is fed to a low-noise, wide-band amplifier. The amplifier must be a wide-band one in order to preserve the sharp pulse rise for timing. The suppression of noise and the use of a low-noise amplifier enable the ranging system to detect relatively weak return pulses.

Abramovici, Alexander↗
NASA NTRS2010

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Aslam, Shahid↗
NASA NTRS2010

Large-Format AlGaN PIN Photodiode Arrays for UV Images

A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

Aslam, Shahid↗
NASA NTRS2012

ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

Vasile, Stefan↗
NASA NTRS2013

Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

Huntington, Andrew↗
NASA NTRS2015

Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

HgCdTe↗
NASA NTRS2017

Radiation and Temperature Hard Multi-Pixel Avalanche Photodiodes

The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

Bensaoula, Abdelhak↗
NASA NTRS2016

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

low-noise preamplifier↗
NASA NTRS2018

Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

Sun, Xiaoli↗
NASA NTRS2018

Single Photon HgCdTe Avalanche Photodiode and Integrated Detector Cooler Assemblies for Space Lidar Applications

A linear mode photon counting HgCdTe avalanche photodiode (APD) focal plane array (FPA) detector was developed for space lidar applications. An integrated detector cooler assembly (IDCA) was manufactured using a miniature Stirling cooler. The HgCdTe APD demonstrated a greater than 60% photon detection efficiency from 0.9 to 4.3 μm wavelength and a dark count rate less than 250,000/s. The IDCA cooled the FPA to 110K from ambient room temperature at a total electrical power of 7 W. The IDCA has passed environmental tests, including vibration, thermal cycling and thermal vacuum tests.

Sun, Xiaoli↗