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At least 127 records · Page 7

Sub-Poissonian light and photocurrent shot-noise suppression in closed opto-electronic loop

We examine experimentally photocurrent noise reduction in the opto-electronic closed loop. Photocurrent noise density 12.5 dB below the shot-noise was observed. So large suppression was not reached in previous experiments and cannot be explained in terms of an ordinary sub-Poissonian light in the loop. We propose the concept of anticorrelation state for the description of light in the loop.

Masalov, A. V.↗

Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

Raisky, O. Y.↗

Enhancing the photocurrent and photoluminescence of single crystal monolayer MoS{sub 2} with resonant plasmonic nanoshells

Monolayer molybdenum disulfide (MoS{sub 2}) produced by controlled vapor-phase synthesis is a commercially promising new two-dimensional material for optoelectronics because of its direct bandgap and broad absorption in the visible and ultraviolet regimes. By tuning plasmonic core-shell nanoparticles to the direct bandgap of monolayer MoS{sub 2} and depositing them sparsely (<1% coverage) onto the material's surface, we observe a threefold increase in photocurrent and a doubling of photoluminescence signal for both excitonic transitions, amplifying but not altering the intrinsic spectral response.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photon assisted processes: Probability amplitudes for the absorption and emission of photons and dc-photocurrents

In this paper one deals with the derivation of probability amplitudes characterizing the photon assisted injection of electrons in a two-terminal quantum conductor. For this purpose one accounts for spatially constant but time dependent periodic voltages applied on an Ohmic contact. Resorting to the discrete Fourier transform provides the probability amplitudes for the emission and absorption of photons in terms of squared Bessel functions of the first kind and integer order. Several kinds of ac-pulses like sinusoidal and dc+sinusoidal are assumed. Mean square values concerning photon numbers have been discussed in some more detail. Time averages of squared time dependent classical currents and leading corrections to the rescaled dc-photocurrent have also been accounted for.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Dynamics of ballistic photocurrents driven by Coulomb scattering in a two-dimensional material

First-principles real-time time-dependent density-functional theory (rt-TDDFT) calculations reveal the existence of ballistic photocurrents generated by Coulomb scattering, which has not previously been considered as a mechanism for the bulk photovoltaic effect. With monolayer GeS as an example, it is predicted that ballistic currents can be comparable to shift currents under experimentally accessible conditions.

2-dimensional systems↗

Photocurrent from Single Collision 14 MeV Neutrons in GaN and GaAs

Accurate predictions of device performance in 14 MeV neutron environments relies upon understanding the recoil cascades that may be produced. Recoils from 14 MeV neutrons impinging on both gallium nitride (GaN) and gallium arsenide (GaAs) devices were modeled and compared to the recoil spectra of devices exposed to 14 MeV neutrons. Recoil spectra were generated using nuclear reaction modeling programs and converted into an ionizing energy loss (IEL) spectrum. We measured the recoil IEL spectra by capturing the photocurrent pulses produced by single neutron interactions with the device. Good agreement, with a factor of two, was found between the model and experiment under strongly-depleted conditions. However, this range of agreement between model and experiment decreased significantly when the bias was removed, indicating partial energy deposition due to cascades that escape the active volume of the device not captured by the model. Consistent event rates across multiple detectors confirm the reliability of our neutron recoil detection method.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

The results of simulation by the transfer-matrix method of TiO{sub 2}/SiO{sub 2} double-layer and TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO{sub 2}/SiO{sub 2} double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m{sup 2}) and for the case of zero reflection loss. It is shown in the simulation that the optimized TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coating provides a 2.3 mA/cm{sup 2} gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO{sub 2}/SiO{sub 2} double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.

36 MATERIALS SCIENCE↗

Kinetics of the Photocurrent of a UV Sensor Based on Indium–Zinc Oxide Nanowires

An analysis of the experiments on the kinetics of the rise and decay of the current under the influence of extreme ultraviolet radiation on the indium–zinc oxide filament layer obtained by the electrospinning method is given. It is shown that the rate of rise of photocurrent is controlled by the radiation intensity and its decay rate is controlled by the partial pressure of oxygen on the surface of the wires. Owing to a significantly larger area of the active surface, this UV sensor with a layer of nanoscale wires has a shorter response time in comparison with homogeneous film structures in which the oxygen adsorption sites are concentrated.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Analytic 1D pn junction diode photocurrent solutions following ionizing radiation and including time-dependent changes in the carrier lifetime.

Circuit simulation tools (e.g., SPICE) have become invaluable in the development and design of electronic circuits in radiation environments. These codes are often employed to study the effect of many thousands of devices under transient current conditions. Device-scale simulation tools (e.g., MEDICI) are commonly used in the design of individual semiconductor components, but require computing resources that make their incorporation into a circuit code impossible for large-scale circuits. Analytic solutions to the ambipolar diffusion equation, an approximation to the carrier transport equations, may be used to characterize the transient currents at nodes within a circuit simulator. We present new transient 1D excess carrier density and photocurrent density solutions to the ambipolar diffusion equation for low-level radiation pulses that take into account a finite device geometry, ohmic fields outside the depleted region, and an arbitrary change in the carrier lifetime due to neutron irradiation or other effects. The solutions are specifically evaluated for the case of an abrupt change in the carrier lifetime during or after, a step, square, or piecewise linear radiation pulse. Noting slow convergence of the raw Fourier series for certain parameter sets, we use closed-form formulas for some of the infinite sums to produce 'partial closed-form' solutions for the above three cases. These 'partial closed-form' solutions converge with only a few tens of terms, which enables efficient large-scale circuit simulations.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

New analytic 1D pn junction diode transient photocurrent solutions following ionizing radiation and including time-dependent carrier lifetime degradation from a non-concurrent neutron pulse.

Circuit simulation codes, such as SPICE, are invaluable in the development and design of electronic circuits in radiation environments. These codes are often employed to study the effect of many thousands of devices under transient current conditions. Device-scale simulation codes are commonly used in the design of individual semiconductor components, but computational requirements limit their use to small-scale circuits. Analytic solutions to the ambipolar diffusion equation, an approximation to the carrier transport equations, may be used to characterize the transient currents at nodes within a circuit simulator. We present new analytic transient excess carrier density and photocurrent solutions to the ambipolar diffusion equation for 1-D abrupt-junction pn diodes. These solutions incorporate low-level radiation pulses and take into account a finite device geometry, ohmic fields outside the depleted region, and an arbitrary change in the carrier lifetime due to neutron irradiation or other effects. The solutions are specifically evaluated for the case of an abrupt change in the carrier lifetime during or after, a step, square, or piecewise linear radiation pulse. Noting slow convergence of the Fourier series solutions for some parameters sets, we evaluate portions of the solutions using closed-form formulas, which result in a two order of magnitude increase in computational efficiency.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Continuous Flow Photoelectrochemical Reactor with Gas Permeable Photocathode: Enhanced Photocurrent and Partial Current Density for CO 2 Reduction

Photoelectrochemical (PEC) CO 2 reduction using a photocathode is an attractive method for making valuable chemical products due to its simplicity and lower overpotential requirements. However, previous PEC processes have often been diffusion-limited leading to low production rates of the CO 2 reduction reaction, due to inefficient gas diffusion through the liquid electrolyte to the catalyst surface, particularly at high current densities. In this study, a gas-permeable photocathode in a continuous flow PEC reactor is incorporated, which facilitates the direct supply of CO 2 gas to the photocathode-electrolyte interface, unlike dark reaction-based flow reactors. This concept is demonstrated using Ag-TiO 2 on carbon paper, illuminated through a quartz window and flowing liquid electrolyte. CO 2 supply is managed via pressure and flow control on the non-illuminated side of the carbon paper. The photocurrent density is significantly influenced by the flow rates and pressure of CO 2 gas, and the electrolyte flow rates. Compared to the traditional H-cell, the continuous PEC flow reactor achieves ≈10-fold increase in CO faradaic efficiency, 30-fold increase in production rate and 16-fold increase in stability without catalyst modifications. This work provides essential insights into the design and application of continuous gas-liquid flow PEC reactor systems, highlighting their potential for other PEC reactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Development of data‐driven exponential integrators with application to modeling of delay photocurrents

Abstract Radiation‐induced photocurrent effects represent a threat to microelectronic components operating in space, manmade and terrestrial radiation environments. Analysis of these threats by circuit simulations requires accurate and computationally efficient compact models. Most existing compact models are based on closed form analytic solutions of the governing equations and require empirical assumptions and idealizations that can limit their validity. In this paper we formulate an alternative numerical, data‐driven approach that learns a compact model from data representative of the type of measurements one can obtain in an experimental facility. To develop the model we start from a generic discrete‐time dynamical system and then use physics knowledge to refine its structure. Numerical studies demonstrate the potential of the model and establish some empirical guidelines for its training.

Bochev, Pavel↗

Progressive evolutions of non-fused ring electron acceptors toward efficient organic solar cells with improved photocurrent and reduced energy loss

Resolving competitive counterbalance between high external quantum efficiency (EQE) response and low energy loss is critical for achieving efficient organic solar cells (OSCs), including those based on low-cost non-fused-ring electron acceptor (NFREA). In this work, we performed a comparable study by utilizing four NFREAs with progressive evolutions in molecular structures, energetic levels, spectral coverages, crystallinity, etc, to pair with polymer donor J52. By regulating the terminal and side chains of NFREAs, the enhanced intramolecular charge transfer (ICT) effect allows O-PC-EH possessing the broader spectral coverage for higher photocurrent, the reduced energetic offset enables O-PC-EH-based device owning higher luminescence property for lower energy loss, the strengthened crystallinity endows O-PC-EH-based blend better charge transport property for less charge recombination. With those comprehensive managements from molecule to blend properties, the J52:O-PC-EH-based OSCs achieved the best efficiency of 14.4% (certified: 14.1%) with benefits in all the three device parameters. Here, this work reveals the importance of fine-tuning molecular structures of NFREAs according to paired polymer donor for maximizing the device performances.

14 SOLAR ENERGY↗

Novel Y doped Bi{sub 2}WO{sub 6} photocatalyst: Hydrothermal fabrication, characterization and enhanced visible-light-driven photocatalytic activity for Rhodamine B degradation and photocurrent generation

Visible-light-driven (VLD) Yttrium (Y) ion doped Bi{sub 2}WO{sub 6} photocatalyst has been synthesized via a facile hydrothermal route. Incorporation of Y{sup 3} {sup +} into Bi{sub 2}WO{sub 6} lattice was successfully confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and ICP analysis. The microstructure and optical property of the as-prepared samples have been characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), nitrogen adsorption–desorption isotherm and UV–vis diffuse reflectance spectra (DRS). The photocatalytic experiments indicated that the Y-Bi{sub 2}WO{sub 6} showed a much higher photocatalytic activity than the pristine Bi{sub 2}WO{sub 6} for the degradation of Rhodamine B (RhB) and photocurrent (PC) generation. This enhancement should be ascribed to the slightly increased band gap and the generated defects by Y{sup 3} {sup +} doping, thus resulting in a much lower recombination rate of the photoinduced electrons and holes. Such a process was verified by the photoluminescence (PL) spectroscopy. In addition, the active species trapping experiments indicated that holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) play important roles in the photocatalytic reaction. - Highlights: • Novel Y-Bi{sub 2}WO{sub 6} photocatalyst has been synthesized by a facile hydrothermal route. • Y-Bi{sub 2}WO{sub 6} exhibits a much higher photocatalytic activity than pristine Bi{sub 2}WO{sub 6}. • Holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) are the two main active species. • Y{sup 3} {sup +} ion can result in a low recombination of photogenerated electron and hole.

36 MATERIALS SCIENCE↗

Hubbard Nonequilibrium Green’s Function Analysis of Photocurrent in Nitroazobenzene Molecular Junction

We present a combined experimental and theoretical study of photoinduced current in molecular junctions consisting of monolayers of nitroazobenzene oligomers chemisorbed on carbon surfaces and illuminated by ultraviolet-visible light through a transparent electrode. Experimentally observed dependence of the photocurrent on light frequency, temperature, and monolayer thickness is analyzed within first-principles simulations employing the Hubbard nonequilibrium Green’s function diagrammatic technique. We reproduce qualitatively correct behavior and discuss mechanisms leading to the characteristic behavior of dark and photoinduced currents in response to changes in bias, frequency of radiation, temperature, and thickness of molecular layer.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Both Free and Trapped Carriers Contribute to Photocurrent of Sb 2 Se 3 Solar Cells

Polycrystalline semiconductor films, such as methylammonium lead iodide, cadmium telluride, copper-indium-gallium selenide, etc., are being intensively studied due to their great potential for highly efficient and cost-effective solar cells. Among them, polycrystalline antimony chalcogenide films are also promising for photovoltaic applications because they are nontoxic, stable, flexible, and have a suitable bandgap. Considerable effort has already been devoted to improving the power conversion efficiency of antimony chalcogenide solar cells, but their efficiency still lingers below 10% due in part to scarce fundamental optoelectronic studies that help guide their development. Here, we use a combination of time-resolved terahertz and transient absorption spectroscopies to interrogate the optoelectronic behavior of antimony selenide thin films. By combining these two techniques we are able to monitor both free and trapped carrier dynamics and then evaluate their respective diffusion lengths. Our results indicate that trapped carriers remain mobile and can reach charge collecting interfaces prior to recombination, and therefore, both free and trapped carriers can contribute to the photocurrent of antimony selenide solar cells.

14 SOLAR ENERGY↗

Unconventional Relation between Charge Transport and Photocurrent via Boosting Small Polaron Hopping for Photoelectrochemical Water Splitting

Doping in semiconductor photoelectrodes controls defect formation and carrier transport that critically determine the device performance. Here we report an unconventional carrier transport relation that is tuned by extrinsic molybdenum (Mo) doping in BiVO 4 photoanodes. Using the single-crystalline thin film approach, we identify that Mo doping significantly condenses the optimization regime between carrier transport and photon collection. For Mo-doped BiVO 4 films, an unprecedentedly thin layer (50 nm), less than one-third of the pristine BiVO 4 thickness, delivers larger photocurrents by overcoming the charge transport limitation, representing a regime not covered in conventional models. We provide direct evidence that Mo doping improves electron transport by boosting not only the donor density but also the electron mobility in the form of a small polaron, with the latter applying substantial impact on the photoelectrochemical performance. Density functional theory calculations reveal that fully ionized Mo dopants establish a strong electrostatic interaction with a small polaron, which helps reduce its hopping barrier by minimizing the local lattice expansion. Here, our results deliver mechanistic insights on the interplay between extrinsic doping and carrier transport, and provide guidance in developing advanced semiconductor photoelectrodes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Light-activated photocurrent degradation and self-healing in perovskite solar cells

Solution-processed organometallic perovskite solar cells have emerged as one of the most promising thin-film photovoltaic technology. But, a key challenge is their lack of stability over prolonged solar irradiation. Few studies have investigated the effect of light soaking on hybrid perovskites and have attributed the degradation in the optoelectronic properties to photochemical or field-assisted ion migration. We show that the slow photocurrent degradation in thin-film photovoltaic devices is due to the formation of light-activated meta-stable deep-level trap states. However, the devices can self-heal completely by resting them in the dark for <1 min or the degradation can be completely prevented by operating the devices at 0 °C. Here, we investigate several physical mechanisms to explain the microscopic origin for the formation of these trap states, among which the creation of small polaronic states involving localized cooperative lattice strain and molecular orientations emerges as a credible microscopic mechanism requiring further detailed studies.

14 SOLAR ENERGY↗