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At least 127 records · Page 7

Pico-second laser materials interactions: mechanisms, material lifetime and performance optimization Ted Laurence(14-ERD-014)

Laser-induced damage with ps pulse widths straddles the transition from intrinsic, multiphoton ionization- and avalanche ionization-based ablation with fs pulses to defectdominated, thermal-based damage with ns pulses. We investigated the morphology and scaling of damage for commonly used silica and hafnia coatings as well as fused silica. Using carefully calibrated laser-induced damage experiments, in situ imaging, and high-resolution optical microscopy, atomic force microscopy, and scanning electron microscopy, we showed that defects play an important role in laser-induced damage for pulse durations as short as 1 ps. Three damage morphologies were observed: standard material ablation, ultra-high density pits, and isolated absorbers. For 10 ps and longer, the isolated absorbers limited the damage performance of the coating materials. We showed that damage resulting from the isolated absorbers grows dramatically with subsequent pulses for sufficient fluences. For hafnia coatings, we used electric field modeling and experiments to show that isolated absorbers near the surface were affected by the chemical environment (vacuum vs. air) for pulses as short as 10 ps. Coupled with the silica results, these results suggested that improvements in the performance in the 10 -60 ps range have not reached fundamental limits. These findings motivate new efforts, including a new SI LDRD in improving the laser-damage performance of multi-layer dielectric coatings. A damage test facility for ps pulses was developed and automated, and was used for testing production optics for ARC. The resulting software was transferred to other laser test facilities for fs pulses and multiple wavelengths with 30 ps pulses. Additionally, the LDRD supported the retention and promotion of an important staff scientist in high-resolution dynamic microscopy and laser-damage testing.

36 MATERIALS SCIENCE↗

Harnessing Structure-Property Relationships for Poly(alkyl thiophene)-Fullerene Derivative Thin Filmsto Optimize Performance in Photovoltaic Devices

Nanoscale bulk heterojunction (BHJ) systems, consisting of fullerenes dispersed in conjugated polymers as the active component, have been actively studied over the last decades in order to produce high performance organic photovoltaics (OPVs). A significant role in device efficiency is played by the active layer morphology, but despite considerable study, a full understanding of the exact role that morphology plays and therefore a definitive method to produce and control an ideal morphology is lacking. In order to understand the BHJ phase behavior and associated morphology in these devices, we have used neutron reflection, together with grazing incidence X-ray and neutron scattering and X-ray photoelectron spectroscopy (XPS) to determine the morphology of the BHJ active layer in functional devices. We have studied nine model BHJ systems based on mixtures of three poly(3-alkyl thiophenes, P3AT) (A=butyl, hexyl, octyl) blended with three different fullerene derivatives, which provides variations in crystallinity and miscibility within the BHJ composite. In studying properties of functional devices, we show a direct correlation between the observed morphology within the BHJ layer and the device performance metrics, i.e., the short-circuit current (J SC ), fill factor (FF), open-circuit voltage (VOC) and overall power conversion efficiency (PCE). Using these model systems, the effect of typical thermal annealing processes on the BHJ morphology through the film thickness as a function of the polythiophene-fullerene mixtures and different electron transport layer interfaces has been determined. It is shown that fullerene enrichment occurs at both the electrode interfaces after annealing. The degree of fullerene enrichment is found to strongly correlate with J SC and to a lesser degree with FF. Finally, based on these findings we demonstrate that by deliberately adding a fullerene layer at the electron transport layer interface, J SC can be increased by up to 20%, resulting in an overall increase in PCE of 5%.

36 MATERIALS SCIENCE↗

Nature of the Active Sites for CO Reduction on Copper Nanoparticles; Suggestions for Optimizing Performance

Recent experiments show that the grain boundaries (GBs) of copper nanoparticles (NPs) lead to an outstanding performance in reducing CO 2 and CO to alcohol products. We report here multiscale simulations that simulate experimental synthesis conditions to predict the structure of a 10 nm Cu NP (158 555 atoms). To identify active sites, we first predict the CO binding at a large number of sites and select four exhibiting CO binding stronger than the (211) step surface. Then, we predict the formation energy of the *OCCOH intermediate as a descriptor for C–C coupling, identifying two active sites, both of which have an under-coordinated surface square site adjacent to a subsurface stacking fault. As a result, we then propose a periodic Cu surface (4 by 4 supercell) with a similar site that substantially decreases the formation energy of *OCCOH, by 0.14 eV.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Abstract To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in the substrate and epitaxial layers. Raman spectroscopy was used to identify points of high crystal stress and non-uniform conductivity in a substrate, while optical profilometry was used to identify bumps and pits in a substrate which could cause catastrophic device failures. The effect of the defects was studied using vertical P-i-N diodes with a single zone junction termination extention (JTE) edge termination and isolation, which were formed via nitrogen implantation. Diodes were fabricated on and off of sample abnormalities to study their effects. From electrical measurements, it was discovered that the devices could consistently block voltages over 1000 V (near the theoretical value of the epitaxial layer design), and the forward bias behavior could consistently produce on-resistance below 2 mΩ cm 2 , which is an excellent value considering DC biasing was used and no substrate thinning was performed. It was found that high crystal stress increased the probability of device failure from 6 to 20%, while an inhomogeneous carrier concentration had little effect on reverse bias behavior, and slightly (~ 3%) increased the on-resistance (R on ). Optical profilometry was able to detect regions of high surface roughness, bumps, and pits; in which, the majority of the defects detected were benign. However a large bump in the termination region of the JTE or a deep pit can induce a low voltage catastrophic failure, and increased crystal stress detected by the Raman correlated to the optical profilometry with associated surface topography.

42 ENGINEERING↗

Characterization and analysis of FA x Cs (1- x ) Pb(I y Br (1- y ) ) 3 perovskite solar cells with thickness controlled transport layers for performance optimization

Strong characterization methods are needed to fully comprehend the chemistry and composition of perovskite solar cells. Understanding the interaction between layers inside a cell and how they react with the environment is important to achieve optimum manufacturing processes, and improve efficiency of perovskite solar cells. Here, we probe a hybrid organic-inorganic perovskite cell structure formed by a fluorine-doped tin oxide (FTO), cassiterite (SnO 2 ), mixed halide perovskite, Spiro-OMeTAD and silver layers. We have demonstrated a power conversion efficiency (PCE) greater than 19% and aV oc of more than 1.1 V for a wide-band gap (1.6 eV) perovskite solar cell.

77 NANOSCIENCE AND NANOTECHNOLOGY↗