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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Evaporated Se x Te 1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

Semiconducting absorbers in high-performance short-wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single-crystalline germanium and III-V semiconductors. However, these materials require complex growth and device fabrication procedures. In this work, thermally evaporated Se x Te 1- x alloy thin films with tunable bandgaps for the fabrication of high-performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of Se x Te 1- x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of Se x Te 1- x film-based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al 2 O 3 to enhance its absorption near the bandgap edge, the Se 0.32 Te 0.68 film (an optical bandgap of ≈0.8 eV)-based photoconductor exhibits a cut-off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW -1 and implied detectivity of 6.5 × 10 10 cm Hz 1/2 W -1 at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se 0.32 Te 0.68 -based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Investigation on the AgPt and AgPd hybrid alloy nanoparticles (HANPs) for the hybrid MoS 2 /ZnO/HANP UV photodetector application

We report hybrid photodetectors made of two or more nanomaterial components can offer the high potential for advanced photodetection applications with enhanced light absorption, improved efficiency and structural tunability. A hybrid UV photodetector (PD) configuration incorporating the plasmonic hybrid alloy nanoparticles (HANP), ZnO quantum dots (QDs) and MoS 2 nanoflakes, namely MoS2/ZnO/HANP PD, is demonstrated. The optimized MoS 2 /ZnO/HANP PD exhibits a high photocurrent of 5.66 mA at 0.34 mW/mm 2 under 385 nm illumination with two orders of improvement from the bare ZnO, which is one of the highest photocurrents by the ZnO-based PDs. It also demonstrates high figure-of-merits with the responsivity of 14,523 mA/W, detectivity of 8.13 x 10 11 jones, and external quantum efficiency (EQE) of 4,680 %, outperforming most of the ZnO-based hybrid architectures. The enhanced photoresponse is primarily attributed to the significantly enhanced hot electron generation by the AgPd HANPs and photocarrier collection through the ZnO QD layer. MoS 2 nanoflakes also provide additional photon absorption sites and boost the photo-carrier transfer process. HANPs are grown by adapting a dual-step solid-state dewetting process (SSD) approach and the superiority of AgPd HANPs is confirmed by systematic investigation, FDTD simulation and comparison of AgPt and AgPd HANPs.

MoS2↗
DOE OSTI2013

Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. The optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effects of thermal treatment on the Mg{sub x}Zn{sub 1−x}O films and fabrication of visible-blind and solar-blind ultraviolet photodetectors

Highlights: • Single-phase wurtzite/cubic Mg{sub x}Zn{sub 1−x}O films were grown by RF magnetron sputtering technique. • We focus on the red-shift caused by annealing the Mg{sub x}Zn{sub 1−x}O films. • MSM-structured visible-blind and solar-blind UV photodetectors were fabricated. - Abstract: A series of single-phase Mg{sub x}Zn{sub 1−x}O films with different Mg contents were prepared on quartz substrates by RF magnetron sputtering technique using different MgZnO targets, and annealed under the atmospheric environment. The absorption edges of Mg{sub x}Zn{sub 1−x}O films can cover the whole near ultraviolet and even the whole solar-blind spectra range, and the solar-blind wurtzite/cubic Mg{sub x}Zn{sub 1−x}O films have been realized successfully by the same method. In addition, the absorption edges of annealed films shift to a long wavelength, which is caused by the diffusion of Zn atoms gathering at the surface during the thermal treatment process. Finally, the truly solar-blind metal-semiconductor-metal structured photodetectors based on wurtzite Mg{sub 0.445}Zn{sub 0.555}O and cubic Mg{sub 0.728}Zn{sub 0.272}O films were fabricated. The corresponding peak responsivities are 17 mA/W at 275 nm and 0.53 mA/W at 250 nm under a 120 V bias, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Large Area Picosecond Photodetector (LAPPD TM ) - Pilot production and development status

Here, we discuss performance results achieved for fully functional sealed Large Area Picosecond Photodetectors (LAPPD (TM)) in tests performed at Incom Inc., as well as independent test results reported by our early adopters. The LAPPD is a microchannel plate (MCP) based large area picosecond photodetector, capable of imaging with single-photon sensitivity at high spatial and temporal resolutions in a hermetic package. The LAPPD has an active area of 350 square centimeters in an all-glass hermetic package with a fused silica window and bottom plate and sidewalls made of borosilicate float glass. Signals are generated by a bi-alkali Na 2 KSb photocathode and amplified with a stacked chevron pair of MCPs produced by applying resistive and emissive atomic layer deposition coatings to glass capillary array (GCA) substrates. Signals are collected on RF stripline anodes applied to the bottom plates which exit the detector via pin-free hermetic seals under the side walls. LAPPD test and performance results for product produced and delivered to early adopter customers during the first half of 2018 are reviewed. These results include electron gains ≥ 7.5 x 10 6 @ 850/950 V (entry/exit MCP), low dark noise rates (22 Cts/s/cm 2 ), single photoelectron (PE) timing resolution of 64 picoseconds RMS, and single photoelectron spatial resolution along and across strips of 2.8 mm and 1.3 mm RMS respectively. Many of these devices also had very high QE photocathodes that were uniform over the full 195 mm x 195 mm window active area (LAPPD #15 QE% @ 365 nm Max/Avg/Min = 25.8/22.3 ± 3/15.7). An update is additionally provided of developments that enable capacitive signal coupling from the detector to application specific pads or stripline readout patterns deployed on printed circuit boards positioned beneath the file, outside of the vacuum package. We conclude with examples of how sensors offering picosecond timing, in diverse applications can bring transformative change to detector technology and applications in future experiments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Organic photodetector with built-in amplification for the detection of visible light with low optical power

We report on an organic-based photodetector that integrates a dual-gate organic thin-film transistor (DG-OTFT) with an organic photodiode (OPD) to produce a device with a high effective responsivity at low optical power and video-rate compatible response. In this device, the OPD operates in photovoltaic mode, instead of the commonly used photoconductive mode, to modulate one of the gate voltages of the DG-OTFT. Effective responsivity values of 10 A W –1 are measured at optical power values lower than 10 nW at 635 nm. Here, modeling of the operation of this new photodetector suggests that effective responsivity values up to 10 5 A W –1 can be achieved at optical powers of 1 nW using current printing technology and state-of-the-art organic semiconductors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. We demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Broadband Infrared Carbon Nanotube Linear Photodetector Arrays

Carbon nanotubes (CNTs) possess exceptional optoelectronic properties, including broadband absorption and high absorption coefficients, making them promising candidates for photodetector applications. However, conventional designs often rely on single or aligned nanotubes, which restrict device scalability and require complex fabrication techniques. Here, in this work, we address these limitations by utilizing CNT-suspended solutions to fabricate large-area photodetectors based on CNT networks via vacuum filtration and direct laser scribing. CNT networks are uniformly formed onto low-thermal-conductance polymeric filter papers that serve as substrates and mitigate the need for suspended structures, reducing the fabrication complexity and cost. The CNT films are patterned into single devices and 49-pixel linear arrays by using a laser-cutting process, enabling scalable and cost-effective production. The resulting devices operate as bolometers and exhibit broad spectral sensitivity extending from visible to midwave infrared, showing stable operation at room temperature. We further demonstrate proof-of-concept IR imaging using linear arrays.

IR imaging↗
DOE OSTI2023

Ultrathin Amorphous Gallium Oxide Vacuum Ultraviolet Photodetectors

Gallium oxide is demonstrated to be an effective material for the detection of vacuum-ultraviolet (VUV) photons. Nanometer thick films of amorphous gallium oxide deposited by atomic layer deposition are found to exhibit large absorptivity in the VUV region 120–200 nm. We leverage the strong absorption of the ultrathin film to fabricate self-powered Schottky diode photodetectors using graphene as a VUV-transparent electrode. In conclusion, responsivity throughout the VUV is calculated, significantly extending the demonstrated spectral range of gallium oxide-based photodetectors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures

Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge. Here in this work, we utilized a semitransparent film of p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap of 0.68 ± 0.07 eV in combination with a molecular beam epitaxy grown n-ZnO layer to build a vertical p-SC-SWNT/n-ZnO heterojunction-based UV photodetector. The resulting device shows a current rectification ratio of 10 3 , a current photoresponsivity up to 400 A/W in the UV spectral range from 370 to 230 nm, and a low dark current. The detector is practically visible-blind with the UV-to-visible photoresponsivity ratio of 10 5 due to extremely short photocarrier lifetimes in the one-dimensional SWNTs because of strong electron–phonon interactions leading to exciton formation. Finallyl, in this vertical configuration, UV radiation penetrates the top semitransparent SC-SWNT layer with low losses (10–20%) and excites photocarriers within the n-ZnO layer in close proximity to the p-SC-SWNT/n-ZnO interface, where electron–hole pairs are efficiently separated by a high built-in electric field associated with the heterojunction.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Solution-Processed, High-Speed, and High-Quantum-Efficiency Quantum Dot Infrared Photodetectors

For over a decade, much effort has been focused on passivation of the high density of localized electronic trap states in colloidal semiconductor quantum dots (QDs), which lead to reduced performance in solar cell, light-emitting diode, laser, and photoconductor applications. However, here we take advantage of the naturally occurring high density of trap states to demonstrate solution-processed high-speed PbSe quantum dot near-infrared photodetectors. Carrier transport dynamics studies reveal multiple trapping and release transport dynamics in band tail states. A sandwich microstrip transmission line photodetector utilizing these QD films was fabricated to achieve high performance by allowing carriers to be swept to the electrodes before they fall into the band tail states. As a result, this device demonstrates external quantum efficiency, responsivity, and response time (full width at half-maximum) of 54%, 0.36 A/W, and 74 ps, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Improving the Responsivity of Hybrid Graphene-Conductive Polymer Photodetectors via Nanowire Self-Assembly

Here, by changing the morphology of a poly(3-hexylthiophene) (P3HT) conductive polymer via self-assembly from a planar thin film to a nanowire mesh mesostructure, we demonstrate hybrid graphene–conductive polymer photodetectors with an experimentally observed 600% improved photoresponsivity when compared to their analogous hybrid photodetectors based on graphene and a planar P3HT thin film of similar thickness. We present at least two reasons that stand behind such a dramatic increase in photoresponsivity: (i) the polymer nanowire mesh architecture with unit cell dimensions comparable to the wavelength of light, which produces light scattering and increased light absorption in the polymer compared to the case of a planar polymer thin film of similar thickness, and (ii) the crystallization of P3HT molecules within the nanowires reduces the density of charge trap states, which in turn provides improved charge transport and charge transfer compared to a P3HT thin film.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Solution-Processed Layered Gallium Telluride Thin-Film Photodetectors

Using scalable solution processing, layered gallium telluride (GaTe) nanoflake dispersions are produced in surfactant-free, low-boiling-point, water–ethanol cosolvent mixtures. During exfoliation, chemical degradation of the ambient-reactive GaTe crystals is minimized by using deoxygenated solvents in a sealed tip ultrasonication system. The structural and chemical integrity of the solution-processed GaTe nanoflakes is subsequently confirmed with a comprehensive suite of microscopic and spectroscopic analyses. Furthermore, field-effect transistors and phototransistors based on individual solution-processed GaTe nanoflakes show electronic and optoelectronic properties, respectively, that are comparable to micromechanically exfoliated GaTe. Minimal solution-processing residues from the surfactant-free, low-boiling-point cosolvent dispersion medium coupled with the high intrinsic hole doping of GaTe produces the highest electrical conductivity among solution-processed layered nanoflake thin films without post-treatment. Large-area photodetectors based on these electrically percolating thin films of solution-processed GaTe nanoflakes show a positive correlation between responsivity and illumination intensity, with a high photoconversion gain that is explained by a combination of defect-mediated optical processes and photothermal effects. Finally, overall, this study establishes solution-processed layered GaTe nanoflakes as a leading candidate for high-performance, large-area, thin-film photodetectors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2013

The operation principle of the well in quantum dot stack infrared photodetector

The well in the quantum dot stack infrared photodetector (WD-QDIP) is proposed which can be operated at high temperature ∼230 K. The operation principle of this device is investigated, including the carrier transport and the enhancement in the photocurrent. The WD-QDIPs with different well numbers are fabricated to study the mechanisms. It is realized that the carrier transport from the emitter to the collector in traditional quantum dot infrared photodetectors consists of two channels deduced from current-voltage characteristics and dark current activation energy at different temperatures. At temperatures below 77 K, the current transports through the InAs quantum dot channel, whereas at temperatures higher than 77 K, the current is dominated by the GaAs leakage channel. In addition, the non-equilibrium situation at low temperatures is also observed owing to the presence of photovoltaic phenomenon. The carrier distribution inside the QDs is simulated to investigate the reasons for the increase of photocurrent. Based on the simulation and the photocurrent response, the hot carrier (electron) scattering effect by the insertion of a quantum well layer is inferred as the most probable reason that lead to the enhancement of the response and regarded as the key factor to achieve high- temperature operation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Large area photodetector based on microwave cavity perturbation techniques

We present a preliminary study to develop a large area photodetector, based on a semiconductor crystal placed inside a superconducting resonant cavity. Laser pulses are detected through a variation of the cavity impedance, as a consequence of the conductivity change in the semiconductor. A novel method, whereby the designed photodetector is simulated by finite element analysis, makes it possible to perform pulse-height spectroscopy on the reflected microwave signals. We measure an energy sensitivity of 100 fJ in the average mode without the employment of low noise electronics and suggest possible ways to further reduce the single-shot detection threshold, based on the results of the described method.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies

A high-performance ZnO quantum dots (QDs)-based ultraviolet (UV) photodetector has been successfully fabricated via the self-assembly of QDs on the Au interdigital electrode. The broadened band gap in ZnO QDs makes the device has the highly selective response for the deep UV detection. The unique QD-QD junction barriers similar to back-to-back Schottky barriers dominate the conductance of the QD network and the UV light-induced barrier-height modulation plays a crucial role in enhancing the photoresponsivity and the response speed. Typically, the as-fabricated device exhibits the fast response and recovery times of within 1 s, the deep UV selectivity of less than 340 nm, and the stable repeatability with on/off current ratio over 10³, photoresponsivity of 5.04×10²A/W, and photocurrent gain of 1.9×10³, demonstrating that the ZnO QD network is a superior building block for deep UV photodetectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Broad spectral response photodetector based on individual tin-doped CdS nanowire

High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Broadband gain in poly(3-hexylthiophene):phenyl-C{sub 61}-butyric-acid-methyl-ester photodetectors enabled by a semicontinuous gold interlayer

Substantial broadband photoconductive gain has been realized for organic, thin-film photodetectors with a poly(3-hexylthiophene):phenyl-C{sub 61}-butyric-acid-methyl-ester (P3HT:PCBM) active layer at low bias voltages. External quantum efficiencies upwards of 1500% were achieved when a semicontinuous gold layer was introduced at the anode interface. Significant gain was also observed in the sub-band gap, near infrared region where the external quantum efficiency approached 100% despite the lack of a sensitizer. The gain response was highly dependent on the thickness of the active layer of the photodetector with the best results achieved with the thinnest devices. The gain is the result of the injection of secondary electrons due to hole charge trapping at the semicontinuous gold layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗