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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗
NASA NTRS2007

Miniature Intelligent Sensor Module

An electronic unit denoted the Miniature Intelligent Sensor Module performs sensor-signal-conditioning functions and local processing of sensor data. The unit includes four channels of analog input/output circuitry, a processor, volatile and nonvolatile memory, and two Ethernet communication ports, all housed in a weathertight enclosure. The unit accepts AC or DC power. The analog inputs provide programmable gain, offset, and filtering as well as shunt calibration and auto-zeroing. Analog outputs include sine, square, and triangular waves having programmable frequencies and amplitudes, as well as programmable amplitude DC. One innovative aspect of the design of this unit is the integration of a relatively powerful processor and large amount of memory along with the sensor-signalconditioning circuitry so that sophisticated computer programs can be used to acquire and analyze sensor data and estimate and track the health of the overall sensor-data-acquisition system of which the unit is a part. The unit includes calibration, zeroing, and signalfeedback circuitry to facilitate health monitoring. The processor is also integrated with programmable logic circuitry in such a manner as to simplify and enhance acquisition of data and generation of analog outputs. A notable unique feature of the unit is a cold-junction compensation circuit in the back shell of a sensor connector. This circuit makes it possible to use Ktype thermocouples without compromising a housing seal. Replicas of this unit may prove useful in industrial and manufacturing settings - especially in such large outdoor facilities as refineries. Two features can be expected to simplify installation: the weathertight housings should make it possible to mount the units near sensors, and the Ethernet communication capability of the units should facilitate establishment of communication connections for the units.

Beech, Russell S.↗
NASA NTRS2003

Recovery of the Space Shuttle Columbia Avionics

Lessons Learned: a) Avionics data can playa critical role in the investigation of a "close call" or accident. b) Avionics designers should think about the role their systems might play in an investigation. c) Know your data, down to the bit level. d) Know your spacecraft - follow the data. e) Internal placement of circuit cards can affect their survivability. f) Think about how to reconstruct nonvolatile memory (e.g. serialize IC's, etc.) g) Use of external assets can aid in extracting data from avionics.

Hames, Kevin L.↗
NASA NTRS2011

NASA Tech Briefs, January 2011

The topics include: 1) Distributed Aerodynamic Sensing and Processing Toolbox; 2) Collaborative Supervised Learning for Sensor Networks; 3) Hazard Detection Software for Lunar Landing; 4) Onboard Nonlinear Engine Sensor and Component Fault Diagnosis and Isolation Scheme; 5) Network-Capable Application Process and Wireless Intelligent Sensors for ISHM; 6) Interface Supports Multiple Broadcast Transceivers for Flight Applications; 7) FPGA Sequencer for Radar Altimeter Applications; 8) Miniature Sapphire Acoustic Resonator - MSAR; 9) Process-Hardened, Multi-Analyte Sensor for Characterizing Rocket Plume Constituents; 10) SAD5 Stereo Correlation Line-Striping in an FPGA; 11) Hybrid Composite Cryogenic Tank Structure; 12) Nanoscale Deformable Optics; 13) Reliability-Based Design Optimization of a Composite Airframe Component; 14) Zinc Oxide Nanowire Interphase for Enhanced Lightweight Polymer Fiber Composites; 15) Plasma Igniter for Reliable Ignition of Combustion in Rocket Engines; 16) Wire Test Grip Fixture; 17) A Sub-Hertz, Low-Frequency Vibration Isolation Platform; 18) Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics; 19) Nanoparticle/Polymer Nanocomposite Bond Coat or Coating; 20) High-Resolution Wind Measurements for Offshore Wind Energy Development; 21) Spring Tire; 22) Marsviewer 2008; 23) Mission Services Evolution Center Message Bus; 24) Major Constituents Analysis for the Vehicle Cabin Atmosphere Monitor; 25) Astronaut Health Participant Summary Application; 26) Adaption of the AMDIS Method to Flight Status on the VCAM Instrument; 27) Natural Language Interface for Safety Certification of Safety-Critical Software; 28) Cryogenic Caging for Science Instrumentation; 29) Wide-Range Neutron Detector for Space Nuclear Applications; 30) In Situ Guided Wave Structural Health Monitoring System; 31) Multiplexed Energy Coupler for Rotating Equipment; 32) Attitude Estimation in Fractionated Spacecraft Cluster Systems; 33) Full Piezoelectric Multilayer-Stacked Hybrid Actuation/Transduction Systems; 34) Active Flow Effectors for Noise and Separation Control; 35) Method and System for Temporal Filtering in Video Compression Systems; 36) Apparatus for Measuring Total Emissivity of Small, Low-Emissivity Samples; 37) Multiple-Zone Diffractive Optic Element for Laser Ranging Applications; 38) Simplified Architecture for Precise Aiming of a Deep-Space Communication Laser Transceiver; 39) Two-Photon-Absorption Scheme for Optical Beam Tracking; 40) High-Sensitivity, Broad-Range Vacuum Gauge Using Nanotubes for Micromachined Cavities; 41) Wide-Field Optic for Autonomous Acquisition of Laser Link; 42) Extracting Zero-Gravity Surface Figure of a Mirror; 43) Modeling Electromagnetic Scattering From Complex Inhomogeneous Objects; 44) Visual Object Recognition and Tracking of Tools; 45) Method for Implementing Optical Phase Adjustment; 46) Visual SLAM Using Variance Grid Maps; 47) Rapid Calculation of Spacecraft Trajectories Using Efficient Taylor Series Integration; 48) Efficient Kriging Algorithms; 49) Predicting Spacecraft Trajectories by the WeavEncke Method; 50) An Augmentation of G-Guidance Algorithms; 51) Comparison of Aircraft Icing Growth Assessment Software; 52) Silicon-Germanium Voltage-Controlled Oscillator at 105 GHz; 53) Estimation of Coriolis Force and Torque Acting on Ares-1; 54) Null Lens Assembly for X-Ray Mirror Segments; and 55) High-Precision Pulse Generator.

Source record↗
NASA NTRS2011

Network-Capable Application Process and Wireless Intelligent Sensors for ISHM

Intelligent sensor technology and systems are increasingly becoming attractive means to serve as frameworks for intelligent rocket test facilities with embedded intelligent sensor elements, distributed data acquisition elements, and onboard data acquisition elements. Networked intelligent processors enable users and systems integrators to automatically configure their measurement automation systems for analog sensors. NASA and leading sensor vendors are working together to apply the IEEE 1451 standard for adding plug-and-play capabilities for wireless analog transducers through the use of a Transducer Electronic Data Sheet (TEDS) in order to simplify sensor setup, use, and maintenance, to automatically obtain calibration data, and to eliminate manual data entry and error. A TEDS contains the critical information needed by an instrument or measurement system to identify, characterize, interface, and properly use the signal from an analog sensor. A TEDS is deployed for a sensor in one of two ways. First, the TEDS can reside in embedded, nonvolatile memory (typically flash memory) within the intelligent processor. Second, a virtual TEDS can exist as a separate file, downloadable from the Internet. This concept of virtual TEDS extends the benefits of the standardized TEDS to legacy sensors and applications where the embedded memory is not available. An HTML-based user interface provides a visual tool to interface with those distributed sensors that a TEDS is associated with, to automate the sensor management process. Implementing and deploying the IEEE 1451.1-based Network-Capable Application Process (NCAP) can achieve support for intelligent process in Integrated Systems Health Management (ISHM) for the purpose of monitoring, detection of anomalies, diagnosis of causes of anomalies, prediction of future anomalies, mitigation to maintain operability, and integrated awareness of system health by the operator. It can also support local data collection and storage. This invention enables wide-area sensing and employs numerous globally distributed sensing devices that observe the physical world through the existing sensor network. This innovation enables distributed storage, distributed processing, distributed intelligence, and the availability of DiaK (Data, Information, and Knowledge) to any element as needed. It also enables the simultaneous execution of multiple processes, and represents models that contribute to the determination of the condition and health of each element in the system. The NCAP (intelligent process) can configure data-collection and filtering processes in reaction to sensed data, allowing it to decide when and how to adapt collection and processing with regard to sophisticated analysis of data derived from multiple sensors. The user will be able to view the sensing device network as a single unit that supports a high-level query language. Each query would be able to operate over data collected from across the global sensor network just as a search query encompasses millions of Web pages. The sensor web can preserve ubiquitous information access between the querier and the queried data. Pervasive monitoring of the physical world raises significant data and privacy concerns. This innovation enables different authorities to control portions of the sensing infrastructure, and sensor service authors may wish to compose services across authority boundaries.

Figueroa, Fernando↗
NASA NTRS2011

Carbon-Based Nano-Electro-Mechanical-Systems

We provide an overview of our work where carbon-based nanostructures have been applied to two-dimensional (2D) planar and three-dimensional (3D) vertically-oriented nano-electro-mechanical (NEM) switches. In the first configuration, laterally oriented single-walled nanotubes (SWNTs) synthesized using thermal chemical vapor deposition (CVD) were implemented for forming bridge-type 2D NEMS switches, where switching voltages were on the order of a few volts. In the second configuration, vertically oriented carbon nanofibers (CNFs) synthesized using plasma-enhanced (PE) CVD have been explored for their potential application in 3D NEMS. We have performed nanomechanical measurements on such vertically oriented tubes using nanoindentation to determine the mechanical properties of the CNFs. Electrostatic switching was demonstrated in the CNFs synthesized on refractory metallic nitride substrates, where a nanoprobe was used as the actuating electrode inside a scanning-electron-microscope. The switching voltages were determined to be in the tens of volts range and van der Waals interactions at these length scales appeared significant, suggesting such structures are promising for nonvolatile memory applications. A finite element model was also developed to determine a theoretical pull-in voltage which was compared to experimental results.

Complementary-Metal-Oxide-Semiconductor (CMOS)↗
NASA NTRS2012

NAND flash screening and qualification guideline for space application

All space missions have a need for nonvolatile memory (NVM), which maintains data integrity when unpowered. Types of NVM include PROM, EEPROM, NOR Flash, and NAND Flash. PROMs, NOR Flash, and EEPROMs are good choices for storing smaller file size data such as boot code or FPGA configurations. These products have excellent data retention characteristics and can reliably store data for years, unpowered, without any data corruption. They can also be read many times without disturbing the data. Another application of NVM is storage of science and engineering data, which requires large of amounts of memory. The highest density memories available today are SDRAM and NAND Flash. However, the power required to operate and store data in NAND Flash is far less than SDRAM. Wherever high density and low power is required, NAND Flash is very attractive.

Heidecker, Jason↗
NASA NTRS2012

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Irom, Farokh↗
NASA NTRS2012

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.↗
DOE OSTI2024

Thermodynamic origin of nonvolatility in resistive memory

Electronic switches based on the migration of high-density point defects, or memristors, are poised to revolutionize post-digital electronics. Despite significant research, key mechanisms for filament formation and oxygen transport remain unresolved, hindering our ability to predict and design device properties. For example, experiments have achieved 10 orders of magnitude longer retention times than predicted by current models. Here, using electrical measurements, scanning probe microscopy, and first-principles calculations on tantalum oxide memristors, we reveal that the formation and stability of conductive filaments crucially depend on the thermodynamic stability of the amorphous oxygen-rich and oxygen-poor compounds, which undergo composition phase separation. Including the previously neglected effects of this amorphous phase separation reconciles unexplained discrepancies in retention and enables predictive design of key performance indicators such as retention stability. Furthermore, this result emphasizes non-ideal thermodynamic interactions as key design criteria in post-digital devices with defect densities substantially exceeding those of today’s covalent semiconductors.

36 MATERIALS SCIENCE↗
NASA NTRS2009

Radiation tests of highly scaled high density commercial nonvolatile NAND flash memories update 2009

Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.

Nguyen, Duc N.↗
NASA NTRS2001

Nonvolatile Rad-Hard Holographic Memory

We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

Chao, Tien-Hsin↗
DOE OSTI2022

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The ECP SICM project: Managing complex memory hierarchies for exascale applications

The Exascale Computing Project (ECP)’s Simplified Interface to Complex Memories (SICM) effort focuses on developing universal interfaces for discovering, managing, and sharing data across complex memory hierarchies. These facilitate the exploitation of emerging memory technologies and support precise control over their various trade-offs such as high-bandwidth versus low-latency, persistent versus ephemeral, high-capacity versus low-capacity, and near-CPU versus near-GPU. SICM comprises three interrelated components: a low-level interface, a high-level interface, and a persistent-heap interface. The low-level SICM interface is intended for system and run-time developers as well as expert application developers who prefer full control of the memory objects used within their application. The high-level SICM interface builds upon the low-level interface, employing application-level profiling and analysis to optimize data management for complex memory hierarchies. The persistent-heap interface provides applications with a persistent memory allocator that can allocate custom C++ data structures in both block-storage and byte-addressable persistent memories.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Superconducting neural networks with disordered Josephson junction array synaptic networks and leaky integrate-and-fire loop neurons

Fully coupled randomly disordered recurrent superconducting networks with additional open-ended channels for inputs and outputs are considered the basis to introduce a new architecture to neuromorphic computing in this work. Various building blocks of such a network are designed around disordered array synaptic networks using superconducting devices and circuits as an example, while emphasizing that a similar architectural approach may be compatible with several other materials and devices. A multiply coupled (interconnected) disordered array of superconducting loops containing Josephson junctions [equivalent to superconducting quantum interference devices (SQUIDs)] forms the aforementioned collective synaptic network that forms a fully recurrent network together with compatible neuron-like elements and feedback loops, enabling unsupervised learning. This approach aims to take advantage of superior power efficiency, propagation speed, and synchronizability of a small world or a random network over an ordered/regular network. Additionally, it offers a significant factor of increase in scalability. Here, a compatible leaky integrate-and-fire neuron made of superconducting loops with Josephson junctions is presented, along with circuit components for feedback loops as needed to complete the recurrent network. Several of these individual disordered array neural networks can further be coupled together in a similarly disordered way to form a hierarchical architecture of recurrent neural networks that is often suggested as similar to a biological brain.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2010

Modeling of Sonos Memory Cell Erase Cycle

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

Phillips, Thomas A.↗