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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Tunneling noise and defects in exfoliated hexagonal boron nitride

Hexagonal boron nitride (hBN) has become a mainstay as an insulating barrier in stackable nanoelectronics because of its large bandgap and chemical stability. At mono- and bilayer thicknesses, hBN can function as a tunnel barrier for electronic spectroscopy measurements. Noise spectroscopy is of particular interest, as noise can be a sensitive probe for electronic correlations not detectable by first-moment current measurements. In addition to the expected Johnson-Nyquist thermal noise and nonequilibrium shot noise, low frequency (<100 kHz) noise measurements in Au/hBN/Au tunneling structures as a function of temperature and bias reveal the presence of thermally excited dynamic defects, as manifested through a flicker noise contribution at high bias that freezes out as temperature is decreased. In contrast, broad-band high frequency (~250MHz – 580MHz) measurements on the same device show shot noise with no flicker noise contribution. The presence of the flicker noise through multiple fabrication approaches and processing treatments suggests that the fluctuators are in the hBN layer itself. Device-to-device variation and the approximate 1/ f dependence of the flicker noise constrain the fluctuator density to on the order of a few per square micron.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning

Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromorphic computers. In this work, we leverage the non-linear voltage dependent partial polarization switching of a ferroelectric field effect transistor to mimic plasticity characteristics of biological synapses. Here, we provide experimental measurements of the synaptic characteristics for a 28nm high-k metal gate technology based device and develop an experimentally calibrated device model for large-scale system performance prediction. Decoupled read-write paths, ultra-low programming energies and the possibility of arranging such devices in a cross-point architecture demonstrate the synaptic efficacy of the device. Our hardware-algorithm co-design analysis reveals that the intrinsic plasticity of the ferroelectric devices has potential to enable unsupervised local learning in edge devices with limited training data

42 ENGINEERING↗
DOE OSTI2021

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. In this report we describe the design of a nanoelectronic device, where a single nuclear spin is coherently controlled via nuclear acoustic resonance (NAR) through the local application of dynamical strain. The strain drives spin transitions by modulating the nuclear quadrupole interaction. We adopt an AlN piezoelectric actuator compatible with standard silicon metal–oxide–semiconductor processing and optimize the device layout to maximize the NAR drive. We predict NAR Rabi frequencies of order 200 Hz for a single 123Sb nucleus in a wide region of the device. Spin transitions driven directly by electric fields are suppressed in the center of the device, allowing the observation of pure NAR. Using electric field gradient-elastic tensors calculated by the density-functional theory, we extend our predictions to other high-spin group-V donors in silicon and to the isoelectronic 73Ge atom.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Nanoscale control of LaAlO 3 /SrTiO 3 conductance beyond the polar catastrophe

Conductive atomic force microscope (c-AFM) lithography can be utilized to create a wide range of LaAlO 3 /SrTiO 3 (LAO/STO)-based nanoelectronic devices in a reconfigurable manner. Experiments were generally performed with intrinsically insulating LAO/STO heterostructures, with LAO thickness less than the critical value at which a polar catastrophe takes place [<4 unit cell (u.c.)]. Here, we use inductively coupled plasma reactive ion etching (ICPRIE) to fabricate c-AFM “canvases” on intrinsically conducting LAO/STO samples with ≥4 u.c. LAO. We observe that its interfacial two-dimensional electron gas (2DEG) can be pinched off and then switched back on by c-AFM lithography. Nanowires created with initially conductive LAO/STO interfaces have an order-of-magnitude longer lifetime in ambient conditions, when compared to an identically created 3.4 u.c. LAO/STO nanowire. We also demonstrate key nanoscale properties such as ballistic transport in a quasi-one-dimensional electron waveguide at a 5 u.c. LAO/STO interface. This approach frees c-AFM-written nanodevice designs from time constraints in air associated with <4 u.c. LAO/STO heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

High-performance nanodevices based on WGe 2⁢ N 4 monolayer

Two-dimensional (2D) 𝑀⁢𝐴 2 ⁢𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁢ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁢N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁢ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁢N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁢𝐴 2⁢ 𝑍 4 -family materials.

2-dimensional systems↗
DOE OSTI2018

One-Step Synthesis of a Hybrid of Graphene Films and Ribbons

Hybrid structures composed of graphene films and (0001) graphene ribbons perpendicular to the surface of a graphene-like film have been produced through the catalytic decomposition of a carbon-containing gas on an Al-coated SiO{sub 2}/Si substrate having Ni catalyst islands on its surface. A hybrid structure has been grown by a one-step chemical vapor deposition process, by admitting acetylene into a chamber for a short time. The hybrid structures thus produced have been used to fabricate Hall sensors with a sensitivity of 3000 Ω/T. The synthesized hybrid structures are potential candidates for use in nanoelectronic devices, energy storage systems, etc. The technique proposed for the growth of such films is compatible with technologies that are employed in the electronics industry.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Study of modification methods of probes for critical-dimension atomic-force microscopy by the deposition of carbon nanotubes

The results of an experimental study of the modification of probes for critical-dimension atomicforce microscopy (CD-AFM) by the deposition of carbon nanotubes (CNTs) to improve the accuracy with which the surface roughness of vertical walls is determined in submicrometer structures are presented. Methods of the deposition of an individual CNT onto the tip of an AFM probe via mechanical and electrostatic interaction between the probe and an array of vertically aligned carbon nanotubes (VACNTs) are studied. It is shown that, when the distance between the AFM tip and a VACNT array is 1 nm and the applied voltage is within the range 20–30 V, an individual carbon nanotube is deposited onto the tip. On the basis of the results obtained in the study, a probe with a carbon nanotube on its tip (CNT probe) with a radius of 7 nm and an aspect ratio of 1:15 is formed. Analysis of the CNT probe demonstrates that its use improves the resolution and accuracy of AFM measurements, compared with the commercial probe, and also makes it possible to determine the roughness of the vertical walls of high-aspect structures by CD-AFM. The results obtained can be used to develop technological processes for the fabrication and reconditioning of special AFM probes, including those for CD-AFM, and procedures for the interoperational express monitoring of technological process parameters in the manufacturing of elements for micro- and nanoelectronics and micro- and nanosystem engineering.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition

The possibility of fabricating highly hydrophobic nanostructured zinc-oxide layers by the inexpensive method of pulsed electrodeposition from aqueous solutions without water-repellent coatings, adapted for large-scale production, is shown. The conditions of the deposition of highly hydrophobic nanostructured zinc-oxide layers exhibiting the “rose-petal” effect with specific morphology, optical properties, crystal structure and texture are determined. The grown ZnO nanostructures are promising for micro- and nanoelectronics as an adaptive material able to reversibly transform to the hydrophilic state upon exposure to ultraviolet radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films

The results of experimental studies of the phase composition of oxide nanostructures formed by the local anodic oxidation of a titanium thin film are reported. The data of the phase analysis of titanium-oxide nanostructures are obtained by X-ray photoelectron spectroscopy in the ion profiling mode of measurements. It is established that the surface of titanium-oxide nanostructures 4.5 ± 0.2 nm in height possesses a binding energy of core levels characteristic of TiO{sub 2} (458.4 eV). By analyzing the titanium-oxide nanostructures in depth by X-ray photoelectron spectroscopy, the formation of phases with binding energies of core levels characteristic of Ti{sub 2}O{sub 3} (456.6 eV) and TiO (454.8 eV) is established. The results can be used in developing the technological processes of the formation of a future electronic-component base for nanoelectronics on the basis of titanium-oxide nanostructures and probe nanotechnologies.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions

Abstract—: Nanowires are one of the most promising building blocks for various nanoelectronic devices. Nanowires are usually grown via the so-called vapor-liquid-solid mechanism on the surfaces activated by the droplets of a catalyst (e.g., Au). Here we theoretically studied the impact of the evaporation from the droplet on the nucleation statistics. Within the semi-analyticalapproach, we obtain the relation between the nucleation time distributions and the evaporation rate of atoms from the droplet. We analyze the Si NW length-time dependences to estimate theeffective lifetime of a silicon atom in a gold-silicon alloy at 550°C is about 5 s.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes

The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes with various energies is performed. It is shown theoretically and experimentally that reversible single events can occur in modern microelectronics and nanoelectronics products under the effect of a fission-spectrum neutron flux caused by the passage of primary recoil atoms and nuclear reaction products along the microcircuit surface perpendicularly to the electric current lines in the near-drain transistor area. A series of irradiation experiments of static memory circuits with design norms of 0.35 μm is interpreted based on the proposed model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Spectral ellipsometry as a method for characterization of nanosized films with ferromagnetic layers

Nanosized films with ferromagnetic layers are widely used in nanoelectronics, sensor systems and telecommunications. Their properties may strongly differ from those of bulk materials that is on account of interfaces, intermediate layers and diffusion. In the present work, spectral ellipsometry and magnetooptical methods are adapted for characterization of the optical parameters and magnetization processes in two- and three-layer Cr/NiFe, Al/NiFe and Cr(Al)/Ge/NiFe films onto a sitall substrate for various thicknesses of Cr and Al layers. At a layer thickness below 20 nm, the complex refractive coefficients depend pronouncedly on the thickness. In two-layer films, remagnetization changes weakly over a thickness of the top layer, but the coercive force in three-layer films increases by more than twice upon remagnetization, while increasing the top layer thickness from 4 to 20 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Elastic Scattering of Mo-Mo, Mo-S and S-S Atomic Pairs in the Relative Kinetic Energy Range of 2–200 eV

The interatomic binary potentials of Mo-Mo, Mo-S and S-S, approved by Molecular Dynamics, were used to calculate elastic phase shifts and cross sections of the atomic pairs in the relative kinetic energy range of 2–200 eV. It is expected the obtained differential and integral cross sections to be of help to describe sputtering of MoS{sub 2} nanometer layers in design of perspective devices of nanoelectronics and photonics.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

Studying the Transparency of Graphene for Low-Energy Electrons

The transparency of graphene membranes for electrons with energies in the range from 5 to 50 eV has been studied with a view to using graphene as an electrode stimulating field-induced emission in microand nanoelectronic devices. The behavior of electrons reflected from a membrane was analyzed with allowance for their return under the action of a retarding electric field. Low-energy electrons were represented by photoelectrons emitted from a diamond photocathode under the action of vacuum ultraviolet radiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Probing Electron Correlations in 1D Electronic Materials Using Single Quantum Channels (Final Technical Report)

This research focuses on the investigation of strong electron correlations in quasi-one-dimensional oxide nanostructures. The archetypical system consisting of heterostructures formed from an ultrathin layer of LaAlO 3 and TiO 2 -terminated SrTiO 3 offers a unique laboratory for probing strong correlations due to intrinsic richness of the physical system and its ability to be modulated at extreme nanoscale dimensions. Under suitable conditions, SrTiO 3 is known to exhibit a variety of important properties associated with strong electronic correlations, especially superconductivity, magnetism. Understanding the nature of these electronic correlations at fundamental scales, and in reduced spatial dimensions, will provide the scientific basis for new energy technologies, information technologies, and materials. The research program is motivated by recent discoveries and technical advances in the PIs' lab, specifically, (1) pioneering work to create conductive nanostructures to be created in LaAlO 3 /SrTiO 3 heterointerfaces with 2 nm spatial resolution, (2) the discovery of a novel correlated electronic phases in which electrons pair without forming a superconductor, and (3) the demonstrated ability to form high-quality quantum point contacts (QPCs) and achieve ballistic electron transport over micrometer-scales in LaAlO 3 /SrTiO 3 nanowires. The program has three major components. First, we have press forward to develop a full microscopic understanding of the mechanism for electron pairing in LaAlO 3 /SrTiO 3 nanostructures. Understanding the “glue” that leads to pairing and superconductivity in a doped semiconductor will help to form a scientific basis for the correlated oxide nanoelectronics platform being developed. Second, we have used their ability to create well-defined quantum channels in nanowires allows to allow novel “scattering” experiments to be performed that probe fundamentally new quasiparticle excitations using an unprecedented combination of experimental methodologies. Experiments already underway with artificially defined superlattices (5 nm period) demonstrate the feasibility of this approach. Third, we have investigated 1D correlations in proximally coupled nanowires, which are predicted exhibit Majorana-like zero modes in the absence of superconductivity or spin-orbit coupling. These studies provide insight not only into new and emergent phenomena in the rich class of complex oxides, but also fundamental mechanisms of superconductivity and magnetism. Thematically, the research aims to combine some of the most important and interesting challenges in the physics of semiconductor nanostructures and correlated electronic materials. The increased understanding of electron correlations can pave the way to the development of new materials with outstanding or novel properties, which could be relevant for energy-related technologies such as low-power high performance computing, quantum computation, or the development of novel materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Green Chemistry for Nanotechnology: Opportunities and Future Challenges

Nanotechnology is a paradigm for emerging technologies and much talked about area of science. It is the technology of future and has revolutionized all fields of medicine, agriculture, environmental and electronics by providing abilities that would never have previously dreamt of. It is a unique platform of multidisciplinary approaches integrating diverse fields of engineering, biology, physics and chemistry. In recent years, nanotechnology has seen the fastest pace in its all aspects of synthesis methodologies and wide applications in all areas of medicine, agricultural, environmental, and electronics. It is the impact of nanotechnology approaches that new fields of nanomedicine, cancer nanotechnology, nanorobotics and nanoelectronics have been emerged and are flourishing with the advances in this expanding field. Nanotechnology holds the potential for pervasive and promising applications and getting significant attention and financial aids also. Although there are different definitions of nanotechnology, in broad prospective, nanotechnology can be described as designing or exploiting materials at nanometer dimensions (i.e., one dimension less than 100 nanometers). At nanoscale, substances have a larger surface area to volume ratio than conventional materials which is the prime reason behind their increased level of reactivity, improved and size tunable magnetic, optical and electrical properties and more toxicity also.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Self-Repair and Patterning of 2D Membrane-Like Peptoid Materials

Two-dimensional materials are of increasing interest for use in filtration, sensing, nanoelectronics, and biomedical devices. Peptoids are a class of biomimetic sequence-defined polymers for which certain amphiphillic sequences self-assemble into 2D crystalline materials with properties that mimic those of cell membranes. Using in situ AFM to both dissect these membrane-like materials and image their subsequent behavior, we explore their ability to self-repair on a range of solid substrates. We show that, in a suitable range of pH, self-repair occurs on both negatively and positively charged substrates and can even occur in the absence of an underlying surface. Following dissection of pre-assembled peptoid membranes and upon introduction of a peptoid monomer solution, peptoids repair the damage by assembling at the newly created edges. The speed of the advancing edge depends on the edge orientation, reflecting the two-fold symmetry of the underlying peptoid lattice. Moreover, because the membranes are stabilized by hydrophobic interactions, if the solution contains peptoids possessing an identical sequence in the hydrophobic block but a distinct hydrophilic block, filling of the defects creates membranes that are patterned at the nanoscale. Consequently, we can utilize this ability to create nm-sized patterns of distinct functional groups within a single coherent membrane.

Jiao, Fang↗
DOE OSTI2020

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

Abstract Ever‐increasing demand on electronic devices with ultrahigh‐density non‐volatile data storage has attracted great interest in novel ferroelectric memories based on conductive ferroelectric domain walls. Embedded in an insulating material, ferroelectric domain walls have the capability of being (re)created, displaced, erased, and altered in their spatial configurations and electronic characteristics. However, the domain wall conductivities are in most cases not yet sufficiently high to ensure the current density required to drive read‐out circuits operating at high speeds. In this work, a giant domain wall current (>10 µA) of a single charged domain wall is obtained through conductive atomic force microscopy with a bias field of 4 V. This is achieved in self‐assembled BiFeO 3 nanocrystals grown by sol‐gel method on Nb‐doped SrTiO 3 substrates. Local configurations of domains and domain wall types are studied using vector piezoresponse force microscopy and high‐resolution transmission electronic microscopy. The enhancement of the wall current is shown to be due to the formation of conducting pathways of charged defects accumulated along domain walls and traversing the nanocrystals. The diverse domain walls can be manipulated by electric field in a perpendicular architecture. The perpendicular array structure of BiFeO 3 nanocrystals should have great potentials for developing perpendicular nanoelectronic prototypes.

Liu, Lisha↗