Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “MICROELECTRONICS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Thin Film Characterization on Cu/SnAg Solder Interface for 3D Packaging Technologies

Copper is a commonly used interconnect metal in microelectronic interconnects due to its exceptional electrical and thermal properties. Particularly in applications of the 2.5 and 3D integration, Cu is utilized in through-silicon-vias (TSVs) and flip chip interconnects between microelectronic chips for providing miniaturization, lower power and higher performance than current 2D packaging approaches. Furthermore, SnAg capped Cu pillars are a common high-density interconnect technology for flip chip bonding. For these interconnects, specific properties of the Cu surface, such as roughness and cleanliness, are an important factor in the process to ensure quality solder bumps. During electroplating, tight processing parameters must be met so that defects are avoided, and high bump uniformity is achieved. An understanding of the interactions at the solder and Cu pillar interface is needed, based on the electroplating parameters, to determine the best method for populating solder on the wafer surface. In this study, surface treatment techniques such as oxygen plasma cleaning were performed on the Cu surfaces and the SnAg plating chemistry for depositing the solder were evaluated through hull cell testing to qualitatively determine the range of current densities to investigate. It was observed that current density while plating played a large role in solder bump deposition morphology. At the higher current densities greater than 60 mA/cm 2 , bump height non-uniformity and dendritic growth are observed and at lower current densities, less than or equal to 60 mA/cm 2 , uniform, continuous bump height occurred.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Hardware Acceleration of Adaptive Neural Algorithms.

As tradit ional numerical computing has faced challenges, researchers have turned towards alternative computing approaches to reduce power - per - computation metrics and improve algorithm performance. Here, we describe an approach towards non - conventional computing that strengthens the connection between machine learning and neuroscience concepts. The Hardware Acceleration of Adaptive Neural Algorithms (HAANA) project ha s develop ed neural machine learning algorithms and hardware for applications in image processing and cybersecurity. While machine learning methods are effective at extracting relevant features from many types of data, the effectiveness of these algorithms degrades when subjected to real - world conditions. Our team has generated novel neural - inspired approa ches to improve the resiliency and adaptability of machine learning algorithms. In addition, we have also designed and fabricated hardware architectures and microelectronic devices specifically tuned towards the training and inference operations of neural - inspired algorithms. Finally, our multi - scale simulation framework allows us to assess the impact of microelectronic device properties on algorithm performance.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Non-Equilibrium Processes, Stability, Design and Control of Pulsed Plasmas for Materials Processing

The energy and angle of impact of ions, interspersed with fluxes of neutral radicals, on the surface of wafers during plasma materials processing are critical parameters for the fabrication of microelectronic devices, nanostructure materials and biocompatible materials. This sensitivity extends to nearly all applications of plasmas to materials processing and surface modification. Low temperature plasmas for plasma materials processing have traditionally used continuously excited plasmas. However, pulsed plasma processing is an enabling technology for achieving finer resolution of microelectronics fabrication and for producing unique surface properties in a wide range of applications. This research project is addressing fundamental plasma physics issues in materials processing – the control of pulsed plasmas and the means for optimizing plasma produced reactant fluxes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

5G Enabled Energy Innovation: Advanced Wireless Networks for Science

Digital wireless communication has become a foundational technology for the nation. The U.S. Department of Energy’s Office of Science (DOE-SC) is the Nation’s largest supporter of basic research in the physical sciences discovering new materials, designing advanced microelectronics, and understanding the physics of radio frequency signaling. The expanding national rollout of a new fifth-generation (5G) mobile network, coupled with the torrent of scientific data generated by next-generation devices such as battery-powered Internet of Things (IoT) sensors, has created an urgent need to enhance cutting-edge wireless technology. Breakthroughs in the deployment, integration, security, and operational range of wireless networking can provide new scientific capabilities for the next decade - from autonomous mobile instruments for scientific user facilities to intelligent sensors networks distributed over thousands of kilometers to study environmental processes. To realize this promise, however, we must continue to drive innovations in computing, artificial intelligence (AI), advanced materials, high-speed networking, and microelectronics. In March 2020, the DOE-SC convened a workshop to identify the potential opportunities and explore the scientific challenges of advanced wireless technologies.

42 ENGINEERING↗
DOE OSTI2021

Manipulation of Hole Spin Transport in Germanium

Downscaling of the silicon metal-oxide-semiconductor field-effect transistor technology is expected to reach a fundamental limit soon. A paradigm shift in computing is occurring. Spin field-effect transistors are considered a candidate architecture for next-generation microelectronics. Being able to leverage the existing infrastructure for silicon, a spin field-effect transistor technology based on group IV heterostructures will have unparalleled technical and economical advantages. For the same material platform reason, germanium hole quantum dots are also considered a competitive architecture for semiconductor-based quantum technology. In this project, we investigated several approaches to creating hole devices in germanium-based materials as well as injecting hole spins in such structures. We also explored the roles of hole injection in wet chemical etching of germanium. Our main results include the demonstration of germanium metal-oxide-semiconductor field-effect transistors operated at cryogenic temperatures, ohmic current-voltage characteristics in germanium/silicon-germanium heterostructures with ferromagnetic contacts at deep cryogenic temperatures and high magnetic fields, evaluation of the effects of surface preparation on carrier mobility in germanium/silicon- germanium heterostructures, and hole spin polarization through integrated permanent magnets. These results serve as essential components for fabricating next-generation germanium-based devices for microelectronics and quantum systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

IMS Rapid Response 2023-2 (RR 2023-RND-2): Magnetic order in layered bismuthide RhMnBi 3 (Final Report)

Microelectronics are technologies (mostly theoretical at this point) to create electronic circuits with components of atomic length scale. One of the key materials innovations enabling this technology is exfoliatable two-dimensional materials. These materials allow thin sheets of only a few atoms thick to be easily created in the laboratory. More and more of these materials are reported every year, but few have been characterized in detail. Thus a major goal in materials research in pursuit of microelectronic devices is characterizing newly discovered materials to evaluate their properties. The goal of this project was the measure and understand the magnetic order in a newly discovered van der Waals magnet RhMnBi 3 . Bulk property experiments indicated very complicated magnetic behavior, with multiple phase transitions between 2K and 300K (room temperature). This potentially indicated highly sensitive and tunable magnetism appropriate for single-layer magnetic switches and sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Final Technical Report - Rapid Surface Microanalysis using a Low Temperature Plasma

This project focused on improving our current understanding and scientific knowledge in the area of plasma-surface interactions and plasma assisted material synthesis related to advanced microelectronics and nanotechnology. Current challenges include: controlling the interaction of Low Temperature Plasma (LTP) with a single layer of atoms to manufacture integrated circuits, continued miniaturization of integrated circuits, LTP processing of material surfaces and thin films to enable industrial scale fabrication of advanced microelectronics, synthesis of new materials, nanomaterials, nanotubes, and complex materials, Technology developed in this subtopic is of value to either (i) enable scans of surfaces (~1 sq. cm area) using various microscopies (electron, optical, other) at high resolution (micron or sub-micron resolution) rapidly (hours or days rather than years to complete a high-resolution scan of such a large surface area), or (ii) enable scans of surfaces (~1 sq. cm area) using various microscopies (electron, optical, other) at relatively low resolution rapidly, then apply algorithms to select spots for micron-scale imaging. Sputtering occurs when particles of a solid material are ejected from its surface by energetic particles from a plasma. While the degradation of the solid material and the subsequent deposition of the ejected material onto vulnerable surfaces are the usual subjects of sputtering studies, plasma science has yet to be combined with sputtering to create new diagnostics devices and systems. Small changes in the design of the plasma discharge device make it possible to create broad plasma beams for rapid scanning or small plasma beams to obtain the distribution of ejected elements with micron resolution. In the high-resolution use, the ion flux is extracted from the gas-discharge plasma and focused by a spherical emission surface to micron sizes onto the target specimen, providing very local sputtering and local elemental analysis. We call this “self-focusing”. The radiation from the excited and ionized sputtered atoms is recorded by a spectrometer through a window and fiberglass cable and analyzed with standard software packages used for optical glow discharge spectroscopy. Computer simulations of beam formation were used to verify and optimize the designs to be tested. A prototype was designed, constructed, and used to start experiments of beam formation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Experimental Determination of the Sn-Cu-Ni Phase Diagram for Pb-Free Solder Applications

The rapid increase of scrapped electrical products disposed in landfill sites is significantly influencing the environment because of the composition of the associated components. This situation has been the stimulus for the international community to issue a directive to prohibit the use of Pb-containing solders in electronic devices and effectively ban such products on the market. The Sn-Cu-Ni has become increasingly significant as it is used in several solder alloys and more generally both Cu and Ni are common substrates that interact with Sn-based solders in microelectronic applications. However, there is currently an insufficient understanding of the phase equilibria and the associated phase diagrams of many Sn alloys. The present work implemented an experimental methodology to obtain high accuracy results for the phase equilibria between one liquid and one or two intermetallic compounds. The Sn-Cu-Ni and the associated Sn-Cu and Sn-Ni binary systems have been re-evaluated and compared with the literature. The liquidus and the invariant lines were determined for the Sn-Cu-Ni ternary at the temperatures ranges of between 240 °C and 270 °C. The result will contribute to filling phase equilibria data gaps in the Sn-rich corner of the Sn-Cu-Ni alloy system.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Flake like V{sub 2}O{sub 5} nanoparticles for ethanol sensing at room temperature

The versatile redox property of vanadium oxide explores it in various applications like catalysis, electrochromism, electrochemistry, energy storage, sensors, microelectronics, batteries etc., In this present work, vanadium oxide was prepared via hydrothermal route followed by calcination. The structural and lattice parameters were analysed from the powder X-ray diffraction (XRD) pattern. The morphology and the composition of the sample were obtained from Field emission Scanning electron microscopic (FeSEM) and Energy Dispersive X-ray (EDAX) Spectrometric analysis respectively. The sensitivity, response – recovery time of the sample towards ethanol (0 ppm – 300 ppm) sensing at room temperature was measured and the present investigation on vanadium oxide nanoparticles over the flakes shows better sensitivity (30%) at room temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Low-power resistive random access memory by confining the formation of conducting filaments

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Auger generation as an intrinsic limit to tunneling field-effect transistor performance

Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO{sub 2}

Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO{sub 2} have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermoelectric coolers for high-power-density 3D electronics heat management

Future advancements in three-dimensional (3D) electronics require robust thermal management methodology. Thermoelectric coolers (TECs) are reliable and solid-state heat pumping devices with high cooling capacity that can meet the requirements of emerging 3D microelectronic devices. In this work, we first provide the design of TECs for electronics cooling using a computational model and then experimentally validate the main predictions. Key device parameters such as device thickness, leg density, and contact resistance were studied to understand their influence on the performance of TECs. Our results show that it is possible to achieve high cooling power density through optimization of TE leg height and packing density. Scaling of TECs is shown to provide ultra-high cooling power density.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance

Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic applications owing to their superior thickness scaling of ferroelectric stability and compatibility with mainstream semiconductors and fabrication processes. For broad-scale impact, long-term performance and reliability of devices using hafnia will require knowledge of the phases present and how they vary with time and use. In this Perspective article, the importance of phases present on device performance is discussed, including the extent to which specific classes of devices can tolerate phase impurities. Following, the factors and mechanisms that are known to influence phase stability, including substituents, crystallite size, oxygen point defects, electrode chemistry, biaxial stress, and electrode capping layers, are highlighted. Herein, discussions will focus on the importance of considering both neutral and charged oxygen vacancies as stabilizing agents, the limited biaxial strain imparted to a hafnia layer by adjacent electrodes, and the strong correlation of biaxial stress with resulting polarization response. Areas needing additional research, such as the necessity for a more quantitative means to distinguish the metastable tetragonal and orthorhombic phases, quantification of oxygen vacancies, and calculation of band structures, including defect energy levels for pure hafnia and stabilized with substituents, are emphasized.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of low fundamental frequency biases

The use of non-sinusoidal waveforms in low pressure capacitively coupled plasmas intended for microelectronics fabrication has the goal of customizing ion and electron energy and angular distributions to the wafer. One such non-sinusoidal waveform uses the sum of consecutive harmonics of a fundamental sinusoidal frequency, f 0 , having a variable phase offset between the fundamental and even harmonics. In this paper, we discuss results from a computational investigation of the relation between ion energy and DC self-bias when varying the fundamental frequency f 0 for capacitively coupled plasmas sustained in Ar/CF 4 /O 2 and how those trends translate to a high aspect ratio etching of trenches in SiO 2 . The fundamental frequency, f 0 , was varied from 1 to 10 MHz and the relative phase from 0° to 180°. Two distinct regimes were identified. Average ion energy onto the wafer is strongly correlated with the DC self-bias at high f 0 , with there being a maximum at φ = 0° and minimum at φ = 180°. In the low frequency regime, this correlation is weak. Average ion energy onto the wafer is instead dominated by dynamic transients in the applied voltage waveforms, with a maximum at φ = 180° and minimum at φ = 0°. The trends in ion energy translate to etch properties. In both, the high and low frequency regimes, higher ion energies translate to higher etch rates and generally preferable final features, though behaving differently with phase angle.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of fabrication processes on BaTiO 3 capacitor properties

There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO 3 )/ferroelectric (BaTiO 3 )/metal oxide (SrRuO 3 ) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO 3 using a NaIO 4 solution and dry etching using an Ar + -ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar + beam can introduce defects into the SrRuO 3 /BaTiO 3 /SrRuO 3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Embracing disorder in quantum materials design

Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, and understand highly uniform systems that exhibit complex interactions, symmetries, and band structures. In this Perspective, we highlight how flipping this paradigm has enabled exciting possibilities in the emerging field of high entropy materials, focusing primarily on high entropy oxide and chalcogenide quantum materials. These materials host high levels of cation or anion compositional disorder while maintaining unexpectedly uniform single crystal lattices. The diversity of atomic scale interactions of spin, charge, orbital, and lattice degrees of freedom are found to emerge into coherent properties on much larger length scales. Thus, altering the variance and magnitudes of the atomic scale properties through elemental selection can open new routes to tune global correlated phases, such as magnetism, metal–insulator transitions, ferroelectricity, and even emergent topological responses. The strategy of embracing disorder in this way provides a much broader pallet from which functional states can be designed for next-generation microelectronic and quantum information systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗