Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “MAGNETIC STORAGE DEVICES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Three-pole wigglers at NSLS-II

The National Synchrotron Light Source-II (NSLS-II) at Brookhaven National Lab (BNL) is a third-generation medium-energy storage ring with 3 GeV and sub-nm-rad horizontal emittance, equipped with a top-off capability of 500 mA. It is designed to deliver an extremely intense photon beam across a wide spectral range, from the far-infrared to the very hard X-ray region. This outstanding performance is achieved through a combination of bending magnets (BM), three-pole wigglers (3 PW), and advanced insertion device (ID) sources. Six three-pole wigglers have been constructed at the NSLS-II IDs Lab. These devices are used to produce broadband radiation with lower angular power density and to monitor the electron beam emittance and energy spread. Here, this paper describes the R&D activities focused on developing the required magnetic and mechanical designs, along with magnetic field optimization and the final magnetic measurement results. It also covers the spectral brightness, flux, power density, spatial and angular output properties of the 3 PWs, including their commissioning results and their effects on the performance of the NSLS-II storage ring.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices’ radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV–vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

42 ENGINEERING↗
DOE OSTI2014

Softening of antiferroelectricity in PbZrO{sub 3}-Pb(Mn{sub 1/2}W{sub 1/2})O{sub 3} complex perovskite solid solution

A new solid solution of complex perovksite structure, (1-x)PbZrO{sub 3}-xPb(Mn{sub 1/2}W{sub 1/2})O{sub 3} (PZ-xPMnW, with x = 0–0.1), is prepared by solid state reaction method. Its crystal structure, dielectric properties, and antiferroelectricity are investigated. It is found that the crystal structure of the solid solution remains in the orthorhombic Pbam symmetry with x ≤ 0.1. The induced ferroelectric polarization (P{sub Ind}) is enhanced, whereas the critical field (E{sub Cr}) is decreased, with increasing PMnW concentration, indicating the softening of antiferroelectricity in PZ. The Curie temperature (T{sub C}) is also decreased with the substitution of PMnW for PZ. The grain size is significantly enlarged, which could be attributed to the presence of a transient liquid phase during the sintering process. Measurements of the magnetization by means of SQUID confirm that the Mn ion exists in a high spin state with a 2+ oxidation state. The softening of antiferroelectric order and the improvement in induced polarization make the PZ-PMnW ceramics an interesting material system for such applications as energy storage devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Fast high-temperature superconductor switch for high current applications

Reversible operation of a high current superconductor switch based on the quench of high-resistance second generation high temperature superconducting wire is demonstrated. The quench is induced by a burst of an ac field generated by an inductively coupled radio-frequency coil. The switch makes a superconducting-to-normal transition within 5 ms and also has a rapid recovery to the superconducting state. The device has potential applications as an active current limiter or as a storage switch for superconducting magnetic energy storage systems. Operation in a full flux penetration/flow regime can effectively minimize the detrimental effects of the intrinsic conductor non-uniformity. (C) 2013 AIP Publishing LLC.

Solovyov, VF↗
DOE OSTI2014

A study on fast digital discrimination of neutron and gamma-ray for improvement neutron emission profile measurement

Neutron and γ-ray (n-γ) discrimination with a digital signal processing system has been used to measure the neutron emission profile in magnetic confinement fusion devices. However, a sampling rate must be set low to extend the measurement time because the memory storage is limited. Time jitter decreases a discrimination quality due to a low sampling rate. As described in this paper, a new charge comparison method was developed. Furthermore, automatic n-γ discrimination method was examined using a probabilistic approach. Analysis results were investigated using the figure of merit. Results show that the discrimination quality was improved. Automatic discrimination was applied using the EM algorithm and k-means algorithm.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Synthetic magnetoelectric coupling in a nanocomposite multiferroic

Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution to realize magnetoelectric coupling between ferromagnetic and ferroelectric order parameters. Despite having antiferromagnetic order, BiFeO₃ (BFO) has nevertheless been a key material due to excellent ferroelectric properties at room temperature. We studied a superlattice composed of 8 repetitions of 6 unit cells of La₀.₇Sr₀.₃MnO₃ (LSMO) grown on 5 unit cells of BFO. Significant net uncompensated magnetization in BFO, an insulating superlattice, is demonstrated using polarized neutron reflectometry. Remarkably, the magnetization enables magnetic field to change the dielectric properties of the superlattice, which we cite as an example of synthetic magnetoelectric coupling. Importantly, controlled creation of magnetic moment in BFO is a much needed path toward design and implementation of integrated oxide devices for next generation magnetoelectric data storage platforms.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Recovery Act: Integrated DC-DC Conversion for Energy-Efficient Multicore Processors

In this project, we have developed the use of thin-film magnetic materials to improve in energy efficiency of digital computing applications by enabling integrated dc-dc power conversion and management with on-chip power inductors. Integrated voltage regulators also enables fine-grained power management, by providing dynamic scaling of the supply voltage in concert with the clock frequency of synchronous logic to throttle power consumption at periods of low computational demand. The voltage converter generates lower output voltages during periods of low computational performance requirements and higher output voltages during periods of high computational performance requirements. Implementation of integrated power conversion requires high-capacity energy storage devices, which are generally not available in traditional semiconductor processes. We achieve this with integration of thin-film magnetic materials into a conventional complementary metal-oxide-semiconductor (CMOS) process for high-quality on-chip power inductors.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. In this report we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a two-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3% with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Ionic Tuning of Cobaltites at the Nanoscale

Control of materials through custom design of ionic distributions is one of the most promising approaches for developing future technologies ranging from spintronic logic and memory devices to energy storage. Perovskites have shown particular promise for ionic-devices due to their high ion mobility and sensitivity to chemical stoichiometry. In this work, we demonstrate control of ion distributions in (La,Sr)CoO3. Commensurate with control of the oxygen stoichiometry, the Co valence and saturation magnetization show a smooth continuous variation. In contrast, magnetoresistance measurements show a sharp, step-wise transition in the magnetic anisotropy and resistivity over the same range of oxygen stoichiometry. These results suggest significant phase separation, with conductive magnetic regions and oxygen-deficient, insulating, non-magnetic regions, forming percolated networks. Indeed, X-ray diffraction identifies oxygen vacancy ordering, including the emergence of Brownmillerite ordering. The unusual appearance of the Brownmillerite phase under ambient temperature is further confirmed by high resolution scanning transmission electron microscopy. This work demonstrates room-temperature ionic control of magnetism, electrical conductivity and crystalline structure, in a 40 nm film, presenting new opportunities for ionic devices that leverage multiple material properties.

thin films, magnetism, xmcd, pnr, STEM, defects↗
DOE OSTI2018

Comparison of AC Losses of YBCO Circular Pancake Coils and Infinitely Long Stack Approximation

High-temperature superconducting (HTS) coils are key parts of many large-scale AC applications, such as transformers, superconducting magnetic energy storage, and motors. The estimation of AC losses of pancake coils is necessary for optimizing the design of HTS devices and cryogenic systems. To speed up the computation of AC losses, the numerical model of an infinitely long HTS stack is often utilized. An HTS stack is a good approximation of the circular coil only if the coil radius is sufficiently large, since AC losses will exhibit a stronger asymmetry along the radial direction for small values of coil radii. To assess the validation of an infinitely long stack approximation, the comparisons of AC losses between infinitely long stacks and circular coils with different radii are presented. The turn number varies from 10 to 80. We find that the AC losses of HTS circular coils will gradually increase to the same value as an infinitely long stack with increasing coil radii. A new parameter is proposed to quantitatively describe the correctness of infinitely long stack approximation. Finally, a method of AC loss estimation of HTS pancake coils is proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Fast Algorithm for Evaluating Critical Current of High-Temperature Superconducting Pancake Coil

Second-generation (2G) high-temperature superconducting (HTS) tapes are now capable of carrying very high transport current and promising for a wide range of applications. The critical current of HTS coils is important for applications, such as superconducting electric machines, superconducting magnetic energy storage, and superconducting magnets. Therefore, precisely and quickly calculating critical current of HTS coils is very important for designing HTS devices. This paper provides a fast algorithm for evaluating critical current of HTS pancake coil. The fast algorithm is realized through a stationary model, which is based on finite element method (FEM) software. The stationary model means that the model is solved by stationary study instead of time-dependent study. To validate this method, a pancake HTS coil was wound and its critical current was measured. Meanwhile, an axial symmetric stationary model was built according to the geometry of the measured HTS coil. By comparing measured and calculated results, the effectiveness of the stationary model was demonstrated. Moreover, the stationary model is compared with H formulation model. The calculated results by the two models are nearly the same. However, by using stationary calculation, the stationary model can remarkably speed up the computational process. Due to the advantage of calculating speed, the stationary model can be used to characterize and design large-scale HTS applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electronic and Spintronic Open-Shell Macromolecules, Quo Vadis ?

Open-shell macromolecules (i.e., polymers containing radical sites either along their backbones or at the pendant sites of repeat units) have attracted significant attention owing to their intriguing chemical and physical (e.g., redox, optoelectronic, and magnetic) properties, and they have been proposed and/or implemented in a wide range of potential applications (e.g., energy storage devices, electronic systems, and spintronic modules). These successes span multiple disciplines that range from advanced macromolecular chemistry through nanoscale structural characterization and on to next-generation solid-state physics and the associated devices. In turn, this has allowed different scientific communities to expand the palette of radical-containing polymers relatively quickly. However, critical gaps remain on many fronts, especially regarding the elucidation of key structure–property–function relationships that govern the underlying electrochemical, optoelectronic, and spin phenomena in these materials systems. Here, we highlight vital developments in the history of open-shell macromolecules to explain the current state of the art in the field. Moreover, we provide a critical review of the successes and bring forward open opportunities that, if solved, could propel this class of materials in a meaningful manner. Finally, we provide an outlook to address where it seems most likely that open-shell macromolecules will go in the coming years. Furthermore, our considered view is that the future of radical-containing polymers is extremely bright and the addition of talented researchers with diverse skills to the field will allow these materials and their end-use devices to have a positive impact on the global science and technology enterprise in a relatively rapid manner.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Manipulation of competing ferromagnetic and antiferromagnetic domains in exchange-biased nanostructures

In this work, using photoemission electron microscopy combined with x-ray magnetic circular dichroism we show that a progressive spatial confinement of a ferromagnet (FM), either through thickness variation or laterally via patterning, actively controls the domains of uncompensated spins in the antiferromagnet (AF) in exchange-biased systems. Direct observations of the spin structure in both sides of the FM/AF interface in a model system, Ni/FeF 2 , show that the spin structure is determined by the balance between the competing FM and AF magnetic energies. Coexistence of exchange bias domains, with opposite directions, can be established in Ni/FeF 2 bilayers for Ni thicknesses below 10 nm. Patterning the Ni/FeF 2 heterostructures with antidots destabilizes the FM state, enhancing the formation of opposite exchange bias domains below a critical antidot separation of the order of a few FeF 2 crystal domains. The results suggest that dimensional confinement of the FM may be used to manipulate the AF spin structure in spintronic devices and ultrahigh-density information storage media. Lastly, the underlying mechanism of the uncompensated AF domain formation in Ni/FeF 2 may be generic to other magnetic systems with complex noncollinear FM/AF spin structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Octonary resistance states in La 0.7 Sr 0.3 MnO 3 /BaTiO 3 /La 0.7 Sr 0.3 MnO 3 multiferroic tunnel junctions

General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La 0.7 Sr 0.3 MnO 3 /BaTiO 3 /La 0.7 Sr 0.3 MnO 3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO 3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Field-free switching of perpendicular magnetization in a ferrimagnetic insulator with spin reorientation transition

Writing magnetic bits through spin-orbit torque (SOT) switching is promising for fast and efficient magnetic random-access memory devices. While SOT switching of out-of-plane (OOP) magnetized states requires lateral symmetry breaking, in-plane (IP) magnetized states suffer from low storage density. Here, we demonstrate a field-free switching scheme using a 5-nanometer europium iron garnet film grown with a (110) orientation that shows a spin reorientation transition from OOP to IP above room temperature. This scheme combines the benefits of high-density storage in the OOP states at room temperature and the efficient field-free SOT switching in the IP states at elevated temperatures. While conventional switching of OOP bits faces the dilemma that high OOP anisotropy is required to improve bit stability and low OOP anisotropy is required to lower switching current density, this scheme disentangles this interdependence, allowing for low switching currents to be possible without sacrificing the bit stability, offering opportunities for future memory devices.

Science & Technology - Other Topics↗
DOE OSTI2018

Structural, Microstructural, Magnetic, and Ferroelectric Properties of Ba{sup 2+}-Doped BiFeO{sub 3} Nanocrystalline Multifferroic Material

Multiferroic barium-substituted nanocrystalline samples having the general formula Bi{sub 1−x}Ba{sub x}FeO{sub 3} (where x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.25) were prepared by cost-effective sol–gel method using metal nitrates as oxidants. The prepared samples were annealed at 650 {sup ∘}C for 4 h using a muffle furnace. The influence of Ba{sup 2+} doping on the structural, microstructural, magnetic, and ferroelectric properties of bismuth ferrite (BFO) was studied systematically by standard techniques. All the samples were characterized by X-ray diffraction (XRD) technique, and the average crystallite size was calculated using Scherrer’s formula. The surface morphology of the prepared nanocrystalline samples was studied using field emission scanning electron microscopy (FE-SEM) technique. FTIR spectra were obtained to confirm the formation of the perovskite structures. The elemental compositional details obtained were confirmed by energy dispersive spectrum (EDS) analysis. Room temperature magnetic measurements were carried out up to a field of 15 kOe, and the parent sample (BFO) shows weak ferromagnetism. Further on, Ba{sup 2+} substitution in BFO shows an increase in magnetization. P–E loops were obtained to study the ferroelectric properties of all the samples. Obtained enhancement in magnetic and ferroelectric properties at room temperature is of great interest within the research community due to its wide range of applications in memory storage, spintronics, sensors, and multi-functional devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Spectrum-Based Alignment of In-Vacuum Undulators in a Low-Emittance Storage Ring

In-vacuum undulators (IVU) are used extensively at light source facilities, in particular at medium-energy storage rings, where these devices are the main sources of high-brightness hard X-rays. The relatively small vertical magnetic gaps that are used in these planar undulators make them rather sensitive to misalignments of magnet arrays with respect to the electron orbit in the vertical plane. Based on commissioning results of undulator-based hard X-ray beamlines at the National Synchrotron Light Source II (NSLS-II)—a Department of Energy Office of Science User Facility at Brookhaven National Laboratory— IVU misalignment was found to be the most frequent cause of spectral “underperformance.” It is possible, nevertheless, to restore the performance using a spectrum-based IVU alignment procedure described in this article.

47 OTHER INSTRUMENTATION↗
DOE OSTI2016

Shapeable magnetoelectronics

Inorganic nanomembranes are shapeable (flexible, printable, and even stretchable) and transferrable to virtually any substrate. These properties build the core concept for new technologies, which transform otherwise rigid high-speed devices into their shapeable counterparts. This research is motivated by the eagerness of consumer electronics towards being thin, lightweight, flexible, and even wearable. The realization of this concept requires all building blocks as we know them from rigid electronics (e.g., active elements, optoelectronics, magnetoelectronics, and energy storage) to be replicated in the form of (multi)functional nanomembranes, which can be reshaped on demand after fabrication. There are already a variety of shapeable devices commercially available, i.e., electronic displays, energy storage elements, and integrated circuitry, to name a few. From the beginning, the main focus was on the fabrication of shapeable high-speed electronics and optoelectronics. Only very recently, a new member featuring magnetic functionalities was added to the family of shapeable electronics. With their unique mechanical properties, the shapeable magnetic field sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. This feature leads electronic skin systems beyond imitating the characteristics of its natural archetype and extends their cognition to static and dynamic magnetic fields that by no means can be perceived by human beings naturally. Various application fields of shapeable magnetoelectronics are proposed. The developed sensor platform can equip soft electronic systems with navigation, orientation, motion tracking, and touchless control capabilities. A variety of novel technologies, such as smart textiles, soft robotics and actuators, active medical implants, and soft consumer electronics, will benefit from these new magnetic functionalities. This review reflects the establishment of shapeable magnetic sensorics, describing the entire development from the first attempts to verify the functional concept to the realization of ready-to-use highly compliant and strain invariant sensor devices with remarkable robustness.

36 MATERIALS SCIENCE↗