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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Infrared nanospectroscopy characterization of metal oxide photoresists

Implementation of extreme ultraviolet (EUV) lithography in high-volume semiconductor manufacturing requires a reliable and scalable EUV resist platform. A mechanistic understanding of the pros and cons of different EUV resist materials is critically important. However, most material characterization methods with nanometer resolution use an x-ray photon or electron beam as the probe, which often cause damage to the photoresist film during measurement. Here, we illustrated the use of non-destructive infrared nanospectroscopy [or nano-Fourier-Transform infrared spectroscopy (nano-FTIR)] to obtain spatially resolved composition information in patterned photoresist films. Further, clear evidence of exposure-induced chemical modification was observed at a spatial resolution down to 40 nm, well below the diffraction limit of infrared light. With improvements, such a nano-FTIR technique with nanoscale spatial resolution, chemical sensitivity, and minimal radiation damage can be a promising candidate for the fundamental study of material properties relevant to EUV lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Hybrid chemical characterization of latent images in EUV resist with 12 nm half-pitch features

With the advancement of high numerical aperture extreme ultraviolet (EUV) lithography, the new platform will enable chipmakers to achieve critical dimensions of 8 nm. However, resist materials face significant challenges in delivering increased sensitivity while managing rising stochastic variations. We aim to develop comprehensive techniques to characterize the chemical profile of latent images, stored in EUV resists after exposure and postexposure baking, which is essential for understanding the origin of stochastic effects. Infrared photo-induced force microscopy (IR PiFM) is a bimodal atomic force microscopy technique combined with an infrared light source, allowing for simultaneous sub-5 nm topographic and chemical characterization within a localized environment. Critical-dimension resonant soft X-ray scatterometry (CD-RSoXS) provides statistical data that reveal structural and chemical information for comparative analysis. For the first time, IR PiFM has been used to chemically map the latent images of EUV resists (after exposure and postexposure baking) at a record high resolution of 12 nm half-pitch, enabling nondestructive analysis of patterns prior to development. Furthermore, CD-RSoXS offers direct experimental observation and comparison of exposed, postexposure baked, and developed patterns, which align with the IR PiFM results. We demonstrate that the IR PiFM technique offers valuable insights into both high spatial resolution and local chemical information simultaneously. In addition, CD-RSoXS provides statistical results that support our main findings. This hybrid metrology approach leverages a multifaceted dataset by combining the most reliable information from each source, which is essential for a comprehensive understanding of the stochastic effects in EUV lithography processes.

O’Reilly, Padraic↗
DOE OSTI2025

Inspection of next-generation EUV resists with nano-projectile secondary ion mass spectrometry

There is a rapidly growing need for new materials for extreme ultraviolet (EUV) lithography, which incorporate high EUV absorbing elements. Hybrid resists, which are a combination of inorganic and organic moieties, are promising as they offer both high EUV sensitivity and high etch resistance. However, there is a glaring lack of methods to examine the uniformity of these important materials at the nanoscale. We examine the capabilities of nano-projectile secondary ion mass spectrometry (NP-SIMS) to investigate hybrid resists. NP-SIMS is a mass spectrometry-based technique with high lateral resolution. Using NP-SIMS, a surface is probed stochastically with a suite of individual projectiles, 10 6 to 10 7 in total, separated in time and space. Examining these individual mass spectra allows for nanoscale investigation of the uniformity of the surface. We evaluated the performance of NP-SIMS using samples of poly(methyl methacrylate) (PMMA) infiltrated with varying amounts of InO x via vapor-phase infiltration (VPI), an organic–inorganic hybridization method derived from atomic layer deposition. Here, we found that NP-SIMS measurements contained abundant characteristic ions related to both the PMMA and infiltrated In. The intensity of In atomic ions increased linearly with the number of infiltration cycles; however, the uniformity of In and PMMA varied with the number of infiltration cycles. After one cycle, we found that both the PMMA and In were relatively inhomogeneous. The homogeneity improved with subsequent infiltration cycles. In addition, NP-SIMS measurements contained characteristic ions related to the infiltration reaction and provided insights into the VPI mechanism. Overall, the results show that NP-SIMS is capable of examining both the inorganic and organic moieties in a hybrid resist and will be an important method for understanding the performance of these materials for use in EUV lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing

Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE 0 ) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.

Khurana, Mohit (ORCID:0000000207898672)↗
DOE OSTI2020

SBV: Characterization of Highly Reflective EUV Coatings (CRADA AWD00002394)

The overall goals were to support the development of new high efficiency EUV coatings which would dramatically reduce the energy needed in the semiconductor manufacturing lithography process as well as dramatically reducing the cost of future EUV lithography tools. The project was successful in the characterization of numerous samples generating many hundreds of datasets and critical feedback for the partner’s internal material development program.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Rapid Fabrication of High Frame Rate Multichannel FTIR Spectrometers

Spectrally resolved signals in the short- to mid-wave infrared (SWIR/MWIR) bands at high-temporal resolution are critical for many national security remote sensing missions. Currently available off the shelf technology can achieve either high temporal resolution or high spectral resolution, but rugged instruments that can achieve both simultaneously remain mostly in the realm of one-off R&D projects. This report documents efforts to demonstrate a new technique for designing and building high resolution, high framerate multichannel FTIR (MC-FTIR) spectrometers that operate in the SWIR/MWIR bands. The core optical element in a MC-FTIR spectrometer is an array of statically-tuned lamellar grating interferometers (LGI). In the original MC-FTIR work these arrays were fabricated using a synchrotron x-ray lithography method. We proposed to instead fabricate these LGI arrays using multiphoton lithography (MPL), a 3D printing technique that can fabricate meso-scale structures with sub-micron precision. Although we were able to fabricate LGI arrays of sufficient size using MPL, the realized optical surfaces had unsuitably high optical form errors, precluding their use in a fieldable instrument. Further advancement in MPL technology may eventually enable fabrication of interferometer-grade LGI arrays.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Gold Ion Beam Milled Gold Zero-Mode Waveguides

Zero-mode waveguides (ZMWs) are widely used in single molecule fluorescence microscopy for their enhancement of emitted light and the ability to study samples at physiological concentrations. ZMWs are typically produced using photo or electron beam lithography. We report a new method of ZMW production using focused ion beam (FIB) milling with gold ions. We demonstrate that ion-milled gold ZMWs with 200 nm apertures exhibit similar plasmon-enhanced fluorescence seen with ZMWs fabricated with traditional techniques such as electron beam lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Zinc‐Imidazolate Films as an All‐Dry Resist Technology

Here, motivated by the drawbacks of solution phase processing, an all‐dry resist formation process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed by novel low temperature (120 °C) gas phase etching using 1,1,1,5,5,5‐hexafluoroacetylacetone (hfacH) to achieve well‐resolved 22 nm lines with a pitch of 30 nm. The effects of electron beam irradiation on the chemical structure and hfacH etch resistance of aZnMIm films are investigated, and it is found that electron irradiation degrades the 2‐methylimidazolate ligands and transforms aZnMIm into a more dense material that is resistant to etching by hfacH and has a C:N:Zn ratio effectively identical to that of unmodified aZnMIm. These findings showcase the potential for aZnMIm films to function in a dry resist technology. Sensitivity, contrast, and critical dimensions of the patterns are determined to be 37 mC cm −2 , 0.87, and 29 nm, respectively, for aZnMIm deposited on silicon substrates and patterned at 30 keV. This work introduces a new direction for solvent‐free resist processing, offering the prospect of scalable, high‐resolution patterning techniques for advanced semiconductor fabrication processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Direct‐Write Printed Contacts to Layered and 2D Materials

Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and 2D materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS 2 (semiconductor), Bi-2212 (superconductor), and Fe 5 GeTe 2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.

2D materials↗
DOE OSTI2022

Enabling a novel approach to a controlled fabrication of 1D crystalline nanowires on suspended microstructures of arbitrary geometries using two direct-writing technologies

Recent progresses in additive manufacturing have inspired new technologies, such as direct laser writing technique, based on two-photon polymerization (2 PP), which complements and further enriches the nanofabrication tools portfolio. Here, we combine 2 PP and our mask-free scanning probe assisted ‘direct-write patterning’ (DWP) method to allow for: a) the fabrication of micro-bridge structures with sub-micrometer resolution, b) selective synthesis of crystalline ZnO nanowires at predefined locations, respectively. This synergistic approach enables cantilever probe patterning of catalysts directly on suspended micro-bridges for in-situ CVD growth of nanoscale material, in a templated manner. The study reported here represents the first proof-of-concept experiments demonstrating versatile and scalable methodology, which can be applied and straightforwardly extended to grow a variety of other nanomaterials, in a controlled and selective fashion, on freestanding micro/nanoscale structures, whose size and geometry can be conveniently varied via templating of sacrificial 2 PP polymeric scaffolds. Furthermore, the demonstration of the possibility to integrate this new approach with the conventional lithography techniques provides a step forward to the development of the novel class of hybrid polymer-silicon-1D or -2D materials, and systems. The quality of the produced ZnO nanowire assemblies was assessed using several physical characterization methods.

36 MATERIALS SCIENCE↗
DOE OSTI2026

KTaO 3 -Based Supercurrent Diode

The supercurrent diode effect (SDE), characterized by nonreciprocal critical currents, represents a promising building block for future dissipationless electronics and quantum circuits. Realizing SDE requires breaking both time-reversal and inversion symmetry in the device. Here we use conductive atomic force microscope (c-AFM) lithography to pattern reconfigurable superconducting weak links (WLs) at the LaAlO 3 /KTaO 3 (LAO/KTO) interface. By deliberately engineering the WL geometry at the nanoscale, we realize SDE in these devices in the presence of modest out-of-plane magnetic fields. The SDE polarity can be reversed by simply changing the WL position, and the rectification efficiency reaches up to 13% under optimal magnetic field conditions. Time-dependent Ginzburg–Landau simulations reveal that the observed SDE originates from asymmetric vortex motion in the inversion-symmetry-breaking device geometry. This demonstration of SDE in the LAO/KTO system establishes a versatile platform for investigating and engineering vortex dynamics, forming the basis for engineered quantum circuit elements.

C-AFM lithography↗
DOE OSTI2025

Quantum Sensing in Micro-Architected Scaffolds

Quantum sensing with nitrogen-vacancy centers in diamond has emerged as a powerful tool for measuring diverse physical parameters, yet the versatility of these measurement approaches is often limited by the achievable layout and dimensionality of bulk-crystal platforms. Here, in this study, we demonstrate a versatile approach to creating designer quantum sensors by surface-functionalizing multiphoton lithography microstructures with NV-containing nanodiamonds. We showcase this capability by fabricating a 150 μm × 150 μm × 150 μm triply periodic minimal surface gyroid structure with millions of attached nanodiamonds. We demonstrate a means to volumetrically image these structures using a refractive index matching confocal imaging technique and extract ODMR spectra from 1.86 μm × 1.86 μm areas of highly concentrated nanodiamonds across a cross-section of the gyroid. Furthermore, the high density of sensing elements enables ensemble temperature measurements with a sensitivity of 0.548 ± 0.084 K/√Hz at 5 mW excitation power. This approach to creating quantum-enabled microarchitectures opens new possibilities for multimodal sensing in complex three-dimensional environments.

Materials science↗
DOE OSTI2020

Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. In conclusion, the surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Quasi-Random Multimetallic Nanoparticle Arrays

Here, this paper describes a nanofabrication procedure that can generate multiscale substrates with quasi-random microregions of nanoparticle arrays having different periodicities and metals. We combine cycles of large-area nanoparticle array fabrication with solvent-assisted wrinkle lithography to mask and etch quasi-random areas of prefabricated nanoparticles to control the fill factors of the arrays. The approach is highly flexible, and parameters, including nanoparticle size and material, array geometry, and fill factor, can be tailored independently. Multimetallic nanoparticle arrays can support surface lattice resonances at fill factors as low as 20% and can function as nanoscale cavities for lasing action with as few as 10% of the nanoparticles in an array. We demonstrated that multimetallic nanoparticle substrates that combine two or three arrays with different periodicities can exhibit lasing responses over visible and near-infrared wavelengths. Our work showcases the robust optical responses of multimetallic and periodic devices for broadband light manipulation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Magnetic metamaterials by ion-implantation

We present a method for the additive fabrication of planar magnetic nanoarrays with minimal surface roughness. Synthesis is accomplished by combining electron-beam lithography, used to generate nanometric patterned masks, with ion implantation in thin films. By implanting 56 Fe + ions, we are able to introduce magnetic functionality in a controlled manner into continuous Pd thin films, achieving 3D spatial resolution down to a few tens of nanometers. Our results demonstrate the application of this technique in fabricating square artificial spin ice lattices, which exhibit well-defined magnetization textures and interactions among the patterned magnetic elements.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Development of an ultrafast wide-field microscope for single-shot laser-driven shock and ablation studies

We build an ultrafast wide-field microscope that captures single-shot events at near-optical diffraction limit for time-resolved studies of ablation and shock compression. Here, we provide insights on how the imaging and spectroscopic modalities of our single-shot microscope are impacted by the depth of field of a microscope objective. At high spatial resolution, the depth of field can critically impede these experiments and novel strategies must be implemented to acquire high-quality optical micrographs at high throughput. Here, we highlight how custom lithography-prepared samples enable us to rectify optical artifacts that arise during sample motion. With a complete knowledge of how the mechanical and optical components couple together, we can then extract critical spatial and temporal features of our ablation and shock compression experiments. For example, during the ablation processes, we show that shock waves created in metal thin films form Newton’s interference rings, whose evolution can be recorded with picosecond temporal resolution and at near optical diffraction-limit resolution.

Ultrafast microscopy↗
DOE OSTI2020

A MEMS dynamic mechanical analyzer for in situ viscoelastic characterization of 3D printed nanostructures

Cellular metamaterial structures with sub-micron features have shown the ability to become excellent energy absorbing materials for impact mitigation due to the enhanced mechanical properties of materials at the nanoscale. However, in order to optimize the design of these energy absorbing metamaterial structures we need to be able to measure the dynamic properties of the sub-micron features such as storage and loss moduli and the loss factor. Therefore, at scale testing is required to capture the scale, temperature, and strain rate dependent material properties of these nanoscale materials. This study presents the design, fabrication, and calibration of a MEMS-based dynamic mechanical analyzer (DMA) that can be directly integrated with the two photon lithography (TPL) process commonly used to fabricate metamaterial structures with nanoscale features. The MEMS-based DMA consists of a chevron style thermal actuator used to generate a tensile load on the structure and two differential capacitive sensors on each side of the structure used to measure load and displacement. This design demonstrated 1.5 ± 0.75 nm displacement resolution and 104 ± 52 nN load resolution, respectively. Dynamic mechanical analysis was successfully conducted on a single nanowire feature printed between the load and displacement stages of the MEMS device with testing frequencies ranging between 0.01–10 Hz and testing temperatures ranging between 22 °C–47 °C. These initial tests on an exemplar TPL part demonstrate that the printed nanowire behaves as a viscoelastic material wherein the transition from glassy to viscous behavior has already set in at the room temperature.

42 ENGINEERING↗
DOE OSTI2020

The future of computing beyond Moore’s Law

Moore’s Law is a techno-economic model that has enabled the information technology industry to double the performance and functionality of digital electronics roughly every 2 years within a fixed cost, power and area. Advances in silicon lithography have enabled this exponential miniaturization of electronics, but, as transistors reach atomic scale and fabrication costs continue to rise, the classical technological driver that has underpinned Moore’s Law for 50 years is failing and is anticipated to flatten by 2025. Here, this article provides an updated view of what a post-exascale system will look like and the challenges ahead, based on our most recent understanding of technology roadmaps. It also discusses the tapering of historical improvements, and how it affects options available to continue scaling of successors to the first exascale machine. Lastly, this article covers the many different opportunities and strategies available to continue computing performance improvements in the absence of historical technology drivers. This article is part of a discussion meeting issue ‘Numerical algorithms for high-performance computational science’.

97 MATHEMATICS AND COMPUTING↗