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At least 127 records · Page 7

Aluminium. II - A review of deformation properties of high purity aluminium and dilute aluminium alloys.

The elastic and plastic deformation behavior of high-purity aluminum and of dilute aluminum alloys is reviewed. Reliable property data, including elastic moduli, elastic coefficients, tensile, creep, fatigue, hardness, and impact are presented. Single crystal tensile results are discussed. Rather comprehensive reference lists, containing publications of the past 20 years, are included for each of the above categories. Defect structures and mechanisms responsible for mechanical behavior are presented. Strengthening techniques (alloys, cold work, irradiation, quenching, composites) and recovery are briefly reviewed.

Reed, R. P.↗

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗

Gravitational Effects on the Morphology and Kinetics of Photodeposition of Polydiacetylene Thin Films From Monomer Solutions

The goal of this proposed work is to study gravitational effects on the photodeposition of polydiacetylene thin films from monomer solutions onto transparent substrates. Polydiacetylenes have been an extensively studied class of organic polymers because they exhibit many unusual and interesting properties, including electrical conductivity and optical nonlinearity. Their long polymeric chains render polydiacetylenes readily conducive to thin film formation, which is necessary for many applications. These applications require thin polydiacetylene films possessing uniform thicknesses, high purity, minimal inhomogeneities and defects (such as scattering centers), etc. Also, understanding and controlling the microstructure and morphology of the films is important for optimizing their electronic and optical properties. The lack of techniques for processing polydiacetylenes into such films has been the primary limitation to their commercial use. We have recently discovered a novel method for the formation of polydiacetylene thin films using photo-deposition from monomer solutions onto transparent substrates with UV light. This technique is very simple to carry out, and can yield films with superior quality to those produced by conventional methods. Furthermore, these films exhibit good third-order properties and are capable of waveguiding. We have been actively studying the chemistry of diacetylene polymerization in solution and the photo-deposition of polydiacetylene thin films from solution. It is well-known that gravitational factors such as buoyancy-driven convection and sedimentation can affect chemical and mass transport processes in solution. One important aspect of polydiacetylene thin film photodeposition in solution, relevant to microgravity science, is that heat generated by absorption of UV radiation induces thermal density gradients that under the influence of gravity, can cause fluid flows (buoyancy-driven convection). Additionally, changes in the chemical composition of the solution during polymerization may cause solutal convection. These fluid flows affect transport of material to and from the film surface and thereby affect the kinetics of the growth process. This manifests itself in the morphology of the resulting films; films grown under the influence of convection tend to have less uniform thicknesses, and can possess greater inhomogeneities and defects. Specifically, polydiacetylene films photodeposited from solution, when viewed under a microscope, exhibit very small particles of solid polymer which get transported by convection from the bulk solution to the surface of the growing film and become embedded. Even when carried out under conditions designed to minimize unstable density gradients (i.e., irradiating the solution from the top), some fluid flow still takes place (particles remain present in the films). It is also possible that defect nucleation may be occurring within the films or on the surface of the substrate; this, too, can be affected by convection (as is the case with crystal growth). Hence films grown in 1-g will, at best, still possess some defects. The objective of this proposal is to investigate, both in 1-g and in low-g, the effects of gravitational factors (primarily convection) on the dynamics of these processes, and on the quality, morphology, and properties of the films obtained.

Paley, Mark S.↗

Resistivity measurements of neutron-irradiated pure metals and Al-Zn alloys

Report presents resistivity measurements and their interpretation for neutron-irradiated pure metals and Al-Zn alloys. The influence of temperature, the role of point defects, and the aging behavior on resistivity are considered. The experimental procedures and results are discussed in detail.

Horak, J. A.↗

The influence of defects and impurities on the nucleation and growth of oriented films by evaporation

The influence of substrate imperfections on the nucleation and growth of fcc metals on alkali halides is discussed. Films deposited on well characterized substrated under well defined vacuum evaporation conditions are investigated. The experimental results of this work are correlated with similar work by other investigators. Models which have been proposed by various authors to explain experimental results are critically examined and areas of difficulty are pointed out. The influence of defects on nucleation rate and the orientation of the film is emphasized. Specific examples of impurity effects, irradiation effects and the influence of amorphous layers are discussed in detail. Evidence is shown that the formation of multiply twinned particles is a result of coalescence and growth. The only consistent model for the orienting influence of impurities is shown to be a chemical reaction effect. It is demonstrated that an alkali metal impurity is very likely responsible for the orienting influence of both water vapor exposure and irradiation. A negative result is found for the reported possibility of an orienting influence being transmitted through an amorphous layer.

Green, A. K.↗

Annealing Effects on the Surface Plasmon of MgO Implanted with Gold

Gold ion implantation was carried out with the energy of 1.1 MeV into (100) oriented MgO single crystal. Implanted doses are 1, 3, 6, 10 x 10(exp 16) ions/sq cm. The gold irradiation results in the formation of gold ion implanted layer with a thickness of 0.2 microns and defect formation. In order to form gold colloids from the as-implanted samples, we annealed the gold implanted MgO samples in three kinds of atmospheres: (1)Ar only, (2)H2 and Ar, and (3)O2 and Ar. The annealing over 1200 C enhanced the gold colloid formation which shows surface plasmon resonance band of gold. The surface plasmon bands of samples annealed in three kinds of atmospheres were found to be at 535 nm (Ar only), 524 nm(H2+Ar), and 560 nm (02+Ar), The band positions of surface plasmon can be reversibly changed by an additional annealing.

Ueda, A.↗

A detailed study of the photo-injection annealing of thermally diffused InP solar cells

A detailed analysis of the annealing of thermally diffused InP solar cells fabricated by the Nippon Mining Co. is presented. The cells were irradiated with 1 MeV electrons, and the induced degradation is measured using deep level transient spectroscopy and low temperature (86 K) IV measurements. Clear recovery of the photovoltaic parameters is observed during low temperature (T is less than 300 K) solar illuminations (1 sun, AMO) with further recovery at higher temperatures (300 less than T less than 500 K). For example, the output of a cell which was irradiated up to a fluence of 1 x 10(exp 16) cm(sup -2) was observed to recover to within 5 percent of the pre-irradiation output. An apparent correlation between the recovery of I(sub sc) and the annealing of the H4 defect and of the minority carrier trapping centers is observed. An apparent correlation between the recovery of VO, and the annealing of the H5 defect is also observed. These apparent correlations are used to develop a possible model for the mechanism of the recovery of the solar cells.

Walters, R. J.↗

Chromosomal Aberrations in DNA Repair Defective Cell Lines: Comparisons of Dose Rate and Radiation Quality

Chromosome aberration yields were assessed in DNA double-strand break repair (DSB) deficient cells after acute doses of gamma-rays or high-LET iron nuclei, or low dose-rate (0.018 Gy/hr) gamma-rays. We studied several cell lines including fibroblasts deficient in ATM (product of the gene that is mutated in ataxia telangiectasia patients) or NBS (product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase, DNA-PK activity. Chromosomes were analyzed using the fluorescence in-situ hybridization (FISH) chromosome painting method in cells at the first division post-irradiation and chromosome aberrations were identified as either simple exchanges (translocations and dicentrics) or complex exchanges (involving >2 breaks in 2 or more chromosomes). Gamma radiation induced higher yields of both simple and complex exchanges in the DSB repair defective cells than in the normal cells. The quadratic dose-response terms for both chromosome exchange types were significantly higher for the ATM and NBS defective lines than for normal fibroblasts. However, the linear dose-response term was significantly higher only for simple exchanges in the NBS cells. Large increases in the quadratic dose response terms indicate the important roles of ATM and NBS in chromatin modifications that facilitate correct DSB repair and minimize aberration formation. Differences in the response of AT and NBS deficient cells at lower doses suggests important questions about the applicability of observations of radiation sensitivity at high dose to low dose exposures. For all iron nuclei irradiated cells, regression models preferred purely linear and quadratic dose responses for simple and complex exchanges, respectively. All the DNA repair defective cell lines had lower Relative biological effectiveness (RBE) values than normal cells, the lowest being for the DNA-PK-deficient cells, which was near unity. To further investigate the sensitivity differences for low and low high doses, we performed chronic low dose-rate irradiation, and have begun studies with ATM and Nibrin inhibitors and siRNA knockout of these proteins. Results support the conclusion that for the endpoint of simple chromosomal aberrations (translocation or dicentrics), the increased radiation sensitivity of AT cells found at high doses (>1 Gy) does not carry over to low doses or doserates, while NBS cells show increased sensitivity for both high and low dose exposures.

George, K. A.↗

Study of SEM induced current and voltage contrast modes to assess semiconductor reliability

The purpose of the scanning electron microscopy study was to review the failure history of existing integrated circuit technologies to identify predominant failure mechanisms, and to evaluate the feasibility of their detection using SEM application techniques. The study investigated the effects of E-beam irradiation damage and contamination deposition rates; developed the necessary methods for applying the techniques to the detection of latent defects and weaknesses in integrated circuits; and made recommendations for applying the techniques.

Beall, J. R.↗

P/N InP solar cells on Ge wafers

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented indicating InP/Ge has more power output than GaAs/Ge cells at fluences in excess of this value.

Wojtczuk, Steven↗

Bulk Cutting of Carbon Nanotubes Using Electron Beam Irradiation

According to some embodiments, the present invention provides a method for attaining short carbon nanotubes utilizing electron beam irradiation, for example, of a carbon nanotube sample. The sample may be pretreated, for example by oxonation. The pretreatment may introduce defects to the sidewalls of the nanotubes. The method is shown to produces nanotubes with a distribution of lengths, with the majority of lengths shorter than 100 tun. Further, the median length of the nanotubes is between about 20 nm and about 100 nm.

Ziegler, Kirk J.↗

Single Particle Damage Events in Candidate Star Camera Sensors

Si charge coupled devices (CCDs) are currently the preeminent detector in star cameras as well as in the near ultraviolet (uv) to visible wavelength region for astronomical observations in space and in earth-observing space missions. Unfortunately, the performance of CCDs is permanently degraded by total ionizing dose (TID) and displacement damage effects. TID produces threshold voltage shifts on the CCD gates and displacement damage reduces the charge transfer efficiency (CTE), increases the dark current, produces dark current nonuniformities and creates random telegraph noise in individual pixels. In addition to these long term effects, cosmic ray and trapped proton transients also interfere with device operation on orbit. In the present paper, we investigate the dark current behavior of CCDs - in particular the formation and annealing of hot pixels. Such pixels degrade the ability of a CCD to perform science and also can present problems to the performance of star camera functions (especially if their numbers are not correctly anticipated). To date, most dark current radiation studies have been performed by irradiating the CCDs at room temperature but this can result in a significantly optimistic picture of the hot pixel count. We know from the Hubble Space Telescope (HST) that high dark current pixels (so-called hot pixels or hot spikes) accumulate as a function of time on orbit. For example, the HST Advanced Camera for Surveys/Wide Field Camera instrument performs monthly anneals despite the loss of observational time, in order to partially anneal the hot pixels. Note that the fact that significant reduction in hot pixel populations occurs for room temperature anneals is not presently understood since none of the commonly expected defects in Si (e.g. divacancy, E center, and A-center) anneal at such a low temperature. A HST Wide Field Camera 3 (WFC3) CCD manufactured by E2V was irradiated while operating at -83C and the dark current studied as a function of temperature while the CCD was warmed to a sequence of temperatures up to a maximum of +30C. The device was then cooled back down to -83 and re-measured. Hot pixel populations were tracked during the warm-up and cool-down. Hot pixel annealing began below 40C and the anneal process was largely completed before the detector reached +3OC. There was no apparent sharp temperature dependence in the annealing. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless remained warmer than the remaining population. The details of the mechanism for the formation and annealing of hot pixels is not presently understood, but it appears likely that hot pixels are associated with displacement damage occurring in high electric field regions.

Marshall, Paul↗

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗