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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Evaluation of SPE and GCR Radiation Effects in Inflatable, Space Suit and Composite Habitat Materials Project

The radiation resistance of polymeric and composite materials to space radiation is currently based on irradiating materials with Co-60 gamma-radiation to the equivalent total ionizing dose (TID) expected during mission. This is an approximation since gamma-radiation is not truly representative of the particle species; namely, Solar Particle Event (SPE) protons and Galactic Cosmic Ray (GCR) nucleons, encountered in space. In general, the SPE and GCR particle energies are much higher than Co-60 gamma-ray photons, and since the particles have mass, there is a displacement effect due to nuclear collisions between the particle species and the target material. This effort specifically bridges the gap between estimated service lifetimes based on decades old Co-60 gamma-radiation data, and newer assessments of what the service lifetimes actually are based on irradiation with particle species that are more representative of the space radiation environment.

Waller, Jess M.↗
NASA NTRS1981

Performance of candidate SEPS solar cells as a function of low temperature and low intensity exposure and 1 MeV electron irradiation

The behavior of 144 high-performance shallow-junction silicon solar cells under conditions of low temperature and intensity was examined. The cells represented nine combinations of thickness, base resistivity, front surface texture, and rear surface treatment. At least 16 cells of each type were individually tested both as active elements under light levels between 0.04 and 1.0 solar constant and in the dark as passive rectifiers under external forward bias. One cell type was also irradiated with 1 MeV electrons up to 2.7 x 10 to the 15th e/sq cm. The inferior cells demonstrated high ohmic and/or non-ohmic shunting. No series resistance or Schottky barrier effects were observed. Fluences beyond 10 to the 13th e/sq cm lowered cell current, probably by increasing volume recombination.

Whitaker, A. F.↗
NASA NTRS1980

Radiation damage in lithium-counterdoped N/P silicon solar cells

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Hermann, A. M.↗
NASA NTRS1975

Damage coefficients in low resistivity silicon

Electron and proton damage coefficients are determined for low resistivity silicon based on minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. Irradiations were performed on bulk samples and cells fabricated from four types of boron-doped 0.1 ohm-cm silicon ingots, including the four possible combinations of high and low oxygen content and high and low dislocation density. Measurements were also made on higher resistivity boron-doped bulk samples and solar cells. Major observations and conclusions from the investigation are discussed.

Srour, J. R.↗
NASA NTRS2015

Electron Beam Irradiated Intercalated CNT Yarns For Aerospace Applications

Multi-walled CNT yarns have been experimentally and commercially created to yield lightweight, high conductivity fibers with good tensile properties for application as electrical wiring and multifunctional tendons. Multifunctional tendons are needed as the cable structures in tensegrity robots for use in planetary exploration. These lightweight robust tendons can provide mechanical strength for movement of the robot in addition to power distribution and data transmission. In aerospace vehicles, such as Orion, electrical wiring and harnessing mass can approach half of the avionics mass. Use of CNT yarns as electrical power and data cables could reduce mass of the wiring by thirty to seventy percent. These fibers have been intercalated with mixed halogens to increase their specific electrical conductivity to that near copper. This conductivity, combined with the superior strength and fatigue resistance makes it an attractive alternative to copper for wiring and multifunctional tendon applications. Electron beam irradiation has been shown to increase mechanical strength in pristine CNT fibers through increased cross-linking. Both pristine and intercalated CNT yarns have been irradiated using a 5-megavolt electron beam for various durations and the conductivities and tensile properties will be discussed. Structural information obtained using a field emission scanning electron microscope, energy dispersive X-ray spectroscopy (EDS), and Raman spectroscopy will correlate microstructural details with bulk properties.

electrical wiring↗
NASA NTRS1986

Responses of Dielectrics to Space Radiation

Nature, extent, and possible prevention of radiation damage discussed. Report summarizes likely effects of high-energy radiation in outer space on variety of commercially-available dielectric materials used in spacecraft. Effects reported on basis of recent Galileo tests, unpublished tests involving proton or electron irradiation, and published information. In general, organic materials with carbon or inorganic fillers most resistant to radiation.

Bouquet, F. L.↗
NASA NTRS1992

Progress in p(+)n InP solar cells fabricated by thermal diffusion

In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

Faur, Mircea↗
NASA NTRS1979

Electron Radiation Damage of (alga) As-gaas Solar Cells

Solar cells (2 cm by 2 cm (AlGa) As-GaAs cells) were fabricated and then subjected to irradiation at normal incidence by electrons. The influence of junction depth and n-type buffer layer doping level on the cell's resistance to radiation damage was investigated. The study shows that (1) a 0.3 micrometer deep junction results in lower damage to the cells than does a 0.5 micrometer junction, and (2) lowering the n buffer layer doping density does not improve the radiation resistance of the cell. Rather, lowering the doping density decreases the solar cell's open circuit voltage. Some preliminary thermal annealing experiments in vacuum were performed on the (AlGa)As-GaAs solar cells damaged by 1-MeV electron irradiation. The results show that cell performance can be expected to partially recover at 200 C with more rapid and complete recovery occurring at higher temperature. For a 0.5hr anneal at 400 C, 90% of the initial power is recovered. The characteristics of the (AlGa)As-GaAs cells both before and after irradiation are described.

Loo, R.↗
NASA NTRS1986

Metalizing Solar Cells by Selective Electroplating

Contact patterns traced by laser scanning. Conductor paths deposited on silicon solar-cell wafers by laser irradiation followed by electroplating. Laser-assisted metalization technique offers better resolution and lower contact resistance than does conventional metalization by screen printing. At the same time, less expensive than metalization with masks and photolithography.

Dutta, S.↗
NASA NTRS1986

Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1987

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Stupica, John↗
NASA NTRS2008

Development of COPVS for High pressure, In-Space, Cryogenic Fuel Storage

Polymeric composite overwrapped pressure vessels (COPVs) provide an attractive material system to support developing commercial launch business and alternate fuel ventures. However to be able to design with these materials, the mechanical behavior of the materials must be understood with regards to processing, performance, damage tolerance, and environment. For the storage of cryogenic propellants, it is important to evaluate the materials performance and impact damage resistance at cryogenic temperatures in order to minimize weight and to ensure safety and reliability. To evaluate the ultimate performance, various polymeric COPV's have been statically burst tested at cryogenic conditions before and after exposure to irradiation. Materials selected for these COPVs were based on the measured mechanical properties of candidate resin systems and fibers that were also tested at cryogenic conditions before and after exposure to irradiation. The correlation of COPV burst pressures with the constituent material properties has proven to be a valuable screening method for selection of suitable candidate materials with resistance to material degradation due to exposure to temperature and radiation.

DeLay, Tom↗
NASA NTRS1994

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Weinberg, I.↗
NASA NTRS2015

Static Dissipative Cable Ties, Such as for Radiation Belt Storm Probes

An article, such as, but not limited to, a cable strap to wrap, support, or secure one or more wires or cables, is formed by cyclically heating and cooling and/or irradiating an article formed of a static dissipative ethylene tetrafluoroethylen (ETFE) resin, to reduce an electrical resistivity and/or to increase a tensile strength of the article.

Langley, Patrick T.↗
NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗
NASA NTRS1991

Radiation and temperature effects in heteroepitaxial and homoepitaxial InP cells

Heteroepitaxial (InP/GaAs) and homo-epitaxial (InP/InP) cells were irradiated by 1-MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of open-circuit voltage.

Weinberg, I.↗