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The continued process development of SiO2 insulators for use in advanced InSb monolithic charge coupled infrared imaging arrays is described. Specific investigations into the use of plasma enhanced chemical vapor deposited (PECVD) SiO2 as a gate insulator for InSb charge coupled devices is discussed, as are investigations of other chemical vapor deposited SiO2 materials.
A near-infrared array camera system has been constructed for use in the 1-5 micron region. The camera is based on a 32 x 32 element InSb focal plane array. The performance of most of the individual detectors in the system is found to be comparable to or better than the performance of any single-element InSb detector system currently in use. A thorough description of the camera system and its image processing subsystems is given, and some sample images are provided.
This grant, NAG8-831, was a continuation of a previous grant, NAG8-541. The long range goal of this program has been to develop an improved understanding of phenomena of importance to directional solidification, in order to enable explanation and prediction of differences in behavior between solidification on Earth and in space. Emphasis in the recently completed grant was on determining the influence of perturbations on directional solidification of InSb and InSb-GaSb alloys. In particular, the objective was to determine the influence of spin-up/spin-down (ACRT), electric current pulses and vibrations on compositional homogeneity and grain size.
The high sensitivity of large format InSb arrays can be used to obtain deep images of the sky at 3-5 micrometers. In this spectral range cool or highly redshifted objects (e.g. brown dwarfs and protogalaxies) which are not visible at shorter wavelengths may be observed. Sensitivity at these wavelengths in ground-based observations is severly limited by the thermal flux from the telescope and from the earth's atmosphere. The Near Infrared Faint-Object Telescope Experiment (NIFTE), a 50 cm cooled rocket-borne telescope combined with large format, high performance InSb arrays, can reach a limiting flux less than 1 micro-Jy(1-sigma) over a large field-of-view in a single flight. In comparison, the Infrared Space Observatory (ISO) will require days of observation to reach a sensitivity more than one order of magnitude worse over a similar area of the sky. The deep 3-5 micrometer images obtained by the rocket-borne telescope will assist in determining the nature of faint red objects detected by ground-based telescopes at 2 micrometers, and by ISO at wavelengths longer than 5 micrometers.
A unique growth cell was designed in which crossed electric and magnetic fields could be separately or simultaneously applied during semiconductor crystal growth. A thermocouple was inserted into an InSb melt inside the growth cell to examine the temperature response of the fluid to applied electromagnetic fields. A static magnetic field suppressed time-dependent convection when a destabilizing thermal field was applied. The simultaneous application of electric and magnetic fields resulted in forced convection in the melt. The InSb ingots grown in the cell were polycrystalline. An InGaSb crystal, 0.5 cm in diameter and 23-cm long, was grown without electromagnetic fields applied. The axial composition results indicated that complete mixing in the melt occurred for this large aspect ratio.
Solidification Using a Baffle in Sealed Ampoules (SUBSA) will be the first materials science experiment conducted in the Microgravity Science Glovebox (MSG) Facility at the International Space Station (ISS) Alpha. The launch is schedule for May 31, 2002. Using the specially developed furnace, 10 Te and Zn-doped single crystals of InSb will be directionally solidified in microgravity. A key goal of the SUBSA investigation is to (i) clarify the origin of the melt motion in space laboratories and (ii) to reduce the magnitude of the melt motion to the point that it does not interfere with the transport phenomena. These goals will be accomplished through a special ampoule and furnace design. A disk-shaped baffle, positioned close to the freezing front, is used to reduce melt motion. Furthermore, the solidification will be visualized by using a transparent furnace, with a video camera, continuously sending images to the earth. This allows detection of bubbles and melt de-wetting that could cause surface tension driven convection. In preparation for the space experiments, 30 ground-based experiments were conducted. The results of ground based tests and numerical modeling will be presented. Based on numerical modeling, 12 mm 1D silica ampoules were selected. The small diameter ampoule favors closer placement of the baffle to the interface, without excessive radial segregation caused by forced convection while providing more damping of natural convection. The parts in the silica ampoule include 2 carbon springs made by Energy Science Laboratories, Inc., a pyrocarbon-coated graphite cylinder, pyrocarbon-coated graphite a baffle with the shaft and the InSb charge with the seed crystal grown by W.A. Bonner of Crystallod Inc.
Traveling magnetic fields offer a direct control of the metallic melt meridional flow in long cylinders. It induces the Lorentz body force that can counteract with the buoyancy force induced by radial temperature non-uniformity. It can significantly offset a natural convection in the system, or it can even set up the flow in opposite direction, thus affecting the interface shape, the growth rate and macrosegregation. Results of our numerical modeling of the Vertical Bridgman crystal growth of InSb will be discussed. The experimental part of this investigation will address the effect of the applied traveling magnetic fields on the interface shape of InSb crystals. Specifics of the growth apparatus design for this research will be provided in details.
A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.
In 2002, the investigation “Solidification Using a Baffle In Sealed Ampoules (SUBSA)” was the first investigation to utilize the Microgravity Science Glovebox (MSG) Facility on the International Space Station (ISS). The SUBSA furnace was designed for growth of indium antimonide. It features a transparent section, which allows a side view of the melt, the solid-liquid (SL) interface and the growing crystal. In 2002, four Te-doped and three Zn-doped InSb crystals were grown in microgravity. Subsequently, the SUBSA furnace was used in several materials science investigations, including growing the radiation detector materials, InI and Cs2LiYCl6:Ce from the melt and vapor phase (2017 to 2019) and “Brazing of Aluminum alloys in Space (BRAINS)”. A review of the SUBSA furnace features and parameters will be presented, including the design of the growth ampoules, charge preparation, and the procedures used to grow InSb (in 2002) and InI (in 2019).
The preparation and interpretation of microgravity experiments conducted on the International Space Station (ISS) can be challenging because of the remote location of the equipment. Although a “ground unit” is typically available on Earth, it is not located in the laboratory of the principal investigator. Furthermore, test experiments in the ground unit cannot fully duplicate heat transfer conditions of the weightless environment, and thus be a reliable reference for experiment design. Under such conditions, numerical simulations are a valuable tool both for preparing the experiments and interpreting the results obtained under terrestrial and micro-gravity conditions. In this work, we developed a detailed 3D model of the “SUBSA” furnace located at the ISS, and demonstrate its use in our present investigation which includes melt growth and vapor growth of InI crystals on the ISS. In 2002, the SUBSA furnace was designed and built for the growth of InSb crystals in the Microgravity Science Glovebox (MSG) at the ISS. The SUBSA furnace features a transparent section without heating elements, where the axial temperature gradient is high. In our present investigation, we have used the same furnace to grow four InI crystals from the melt, and two InI crystals from the vapor phase (2018-2021). InI crystals have ~20 times lower thermal conductivity than InSb crystals. As a result, during melt growth, the InI crystals were exposed to extremely high temperature gradients. To reduce the axial temperature gradient, we added external jackets made from high thermal conductivity material to the growth ampoules. The SUBSA furnace could not be modeled as asymmetric because of its rectangular shape and right-angled transparent section, which contains a convoluted geometry. The rectangular shape of the transparent section further complicates modelling of radiative heat transfer, which dominates in the zone. At present, numerical simulations are being conducted to resolve an apparent discrepancy between the readings of the 5 thermocouples located in the SUBSA furnace, and the observed position of the solid and molten material. The 3D simulation will be presented, along with the calibration and growth experiment results conducted in microgravity and in the SUBSA ground unit. The developed model should be useful for upcoming microgravity investigations planned to be conducted in the SUBSA facility.
In 2002, our investigation Solidification Using a Baffle In Sealed Ampoules (SUBSA) was the first investigation to utilize the Microgravity Science Glovebox (MSG) Facility on the International Space Station (ISS). The SUBSA furnace was designed for growth of indium antimonide. It features a transparent section, which allows a side view of the melt, the solid-liquid (SL) interface and the growing crystal. In 2002, four Te- doped and three Zn-doped InSb crystals were grown in microgravity. Subsequently, the SUBSA furnace was used in several other materials science investigations, including growing the radiation detector materials InI and Cs2LiYCl6:Ce from the melt and vapor phase (2017 to 2019) and Brazing of Aluminum alloys in Space (BRAINS). A review of the SUBSA furnace features and parameters will be presented, including the design of the growth ampoules, charge preparation, and the procedures used to grow InSb (in 2002) and InI (in 2019).
Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a bandgap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. Here, the successful growth of a DLHC material here opens the door for the realization of a large family of novel 2D DLHC traditional semiconductors with unique excitonic, topological, and electronic properties.
Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.
This article reports monocrystalline CdSeTe/MgCdTe double‐heterostructure (DH) solar cells with varying Se compositions in the absorber layers that are grown on InSb substrates by using molecular beam epitaxy. The Se composition in the samples studied is determined to be 4%–11% through high‐resolution X‐ray diffraction (XRD) and photoluminescence measurements. Increased Se incorporation induces higher defect density attributed to increased lattice mismatch, and mixed‐phase formation due to the small difference in formation energies between the wurtzite and zinc blende phases of CdSe, which causes stacking faults and grain boundaries. Devices are fabricated by directly depositing an n‐type indium tin oxide (ITO) layer on the CdSeTe/MgCdTe DHs followed by Ag metal contacts. Reduced bandgap is observed in solar cells with increased Se composition. The devices with an absorber containing 4% Se exhibit an average open‐circuit voltage ( V OC ) of 0.925 V, a short‐circuit current density ( J SC ) of 23.4 mA/cm 2 , a fill factor ( FF ) of 0.650 and an efficiency of 14.1% without anti‐reflection coating. Absorbers with higher Se compositions result in poor device performance, mainly attributed to high defect density in the materials.
Here, we present a simple theory for estimating spin decoherence due to spin–phonon coupling in a lattice, and apply the theory to the Ampere field fluctuation from acoustic phonons. The Ampere field is generated by charge current loops around each lattice site due to acoustic phonon motion of the ions. The spin decoherence time due to the Ampere field fluctuation is estimated for NV centers and Mo impurities in SiC, and quantum dot qubits in Ge, GaAs, InAs, and InSb for temperature range 2 to 300 K. For most materials the estimated decoherence time is orders of magnitude longer than reported experimental values at the same temperature. The only exception is Mo impurity in SiC, for which the experimental decoherence time at 2 K is close to that due to Ampere field fluctuation.
A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.
Abstract Realizing a large Landé g -factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of g ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the g -factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g -factor engineering in semiconductor structures.
Reconfigurable plasmonic materials are crucial components in active photonic devices for optical communication, signal processing, and sensing applications. Certain candidates including transparent conducting oxides, small-bandgap semiconductors (i.e. Ge, InSb), and conducting polymers can exhibit switchable free carrier concentrations triggered by optical, electrical or thermal excitations. Here, we show that aligned films of single-walled carbon nanotubes (SWCNTs) can serve as all-optically tunable plasmonic material in the mid-infrared range, thereby adding them to the library of switchable plasmonic materials. Interband optical pumping with femtosecond laser pulses results in the photoexcitation of free charge carriers, which transiently blueshifts the plasmon resonances of patterned, periodic SWCNT nano-resonators spanning the mid-infrared spectral range from 1700 to 2700 cm -1 . Furthermore. the ultrafast plasmon modulation exhibits a nearly single-picosecond decay time, attributed to interband carrier relaxation and inter-tube charge transfer. Given that aligned films of SWCNTs have high thermal stability, excellent photostability, epsilon-near-zero property, and extremely large optical anisotropy, their dynamic tunability represents a promising pathway towards active optical devices in the technologically important mid-infrared range.