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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Process Research on Polycrystalline Silicon Material (PROPSM)

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Culik, J. S.↗
NASA NTRS1982

Performance characteristics of a microwave plasma disk ion source

The development, design, and preliminary performance characteristics of a microwave plasma disk ion source are presented. Several important design concepts indigenous to microwave plasmas have been utilized in the development of this ion source: generation of a resonantly sustained microwave discharge inside a microwave/plasma coupler, probe and length tuning of the microwave/plasma coupler, and minimization of plasma volume. The experimental results for a 2.45 GHz, eight cm ion source excited in the TE(211) and TM(011) modes are described. Results are presented for electromagnetic mode excitation, electron density, coupling efficiency and loaded cavity Q, and I-V characteristics and efficiencies. It is preliminarily shown that a microwave disk-like plasma can be sustained adjacent to the grids with either TE or TM cavity modes at pressures below 2 x 10 to the -4th torr. Over 80% of the power absorbed in the cavity is coupled into the plasma.

Asmussen, J.↗
NASA NTRS1983

Electron temperature measurements using a 12-channel array probe

The most common technique for determining the mean kinetic energy of electrons in low-temperature plasmas utilizes the so-called Langmuir probe. The present investigation is concerned with the study of the electron temperature in a pulsed high-beta plasma as a function of time by means of a miniature array of 12 planar Langmuir probes. By using a probe with many individually collecting surfaces, each biased at a different fixed voltage, an approximation to the true probe characteristic is obtained when monitoring the collected currents for each independent subprobe. The employed method, by using many points, provides enough information to reconstruct the entire I-V curve. Attention is given to the principle of operation of the new probe, calibration, accuracy, time resolution, and applications of the new method. By employing two probes it is possible to perform correlation measurements to study heat flow and temperature fluctuations.

Wild, N.↗
NASA NTRS1984

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗
NASA NTRS1984

Advanced photovoltaic experiment (S0014)

The advanced photovoltaics-related experiments for investigating a portion of the solar spectrum and the effect of the space environment on photovoltaics. The information will be used to provide correlation between space and ground testing and also to provide for more accurate performance measurement in the laboratory. Specific objectives of these experiments are to provide information on the performance and endurance of advanced and conventional solar cells, to improve reference standards for photovoltaic measurements, and to measure the energy distribution in the extraterrestrial solar spectrum. Data to be obtained will include temperatures and short-circuit current of the samples. Six-point current-voltage (I-V) characteristics will be obtained for selected samples. These data will be recorded once a day during the flight. Orbit data will be correlated with preflight and postflight measurement of the samples.

Bradhorst, H. W., Jr.↗
NASA NTRS1983

Process Research On Polycrystalline Silicon Material (PROPSM)

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Culik, J. S.↗
NASA NTRS1984

LEED and AES characterization of the GaAs(110)-ZnSe interface

In this paper, a study is conducted of the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. It is found that the films grown on 300 C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T greater than 350-400 C) are Se rich. The crystallinity of films grown at 300 C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2-3 A), produces a (1 x 2) LEED pattern and modifications of the LEED I-V profiles, which probably indicate a change in the substrate atomic relaxation.

Tu, D.-W.↗
NASA NTRS1984

Electrical self-calibration of nonideal bolometers

An analytical method for determining the absorbed energy calibration of an IR bolometer from purely electrical measurements is presented. The technique is targeted at detectors with purely electrical nonlinearities. It is shown that the responsivity can be derived from the I-V plot if the limiting high-frequency impedance is measured. The electrical nonlinearity is then the difference between the impedance and the dc resistance. The model is used for designing a circuit for measuring the relative impedance parameters. The results are applicable to studies of IR sources and the detection of energy pulses with bolometers.

Mather, J. C.↗
NASA NTRS1985

Theory of the high base resistivity n(+)pp(+) silicon solar cell and its application to radiation damage effects

Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.

Goradia, C.↗
NASA NTRS1984

Radiation damage and annealing of amorphous silicon solar cells

Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.

Byvik, C. E.↗
NASA NTRS1985

Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

Valco, G. J.↗
NASA NTRS1985

Thermal stress cycling of GaAs solar cells

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Janousek, B. K.↗
NASA NTRS1985

Comprehensive solar cell modeling and correlation studies

Modeling and correlation studies of solar cells was discussed. Recursive relationships were used to generate solutions at a number of mesh points within the emitter region. Photoexcited hole concentration and built-in electric field were calculated as a function of position. Simulated and experimentally determined I-V curves were shown to have good fit.

Lamorte, M. L.↗
NASA NTRS1988

Performance of GaAs concentrator cells under electron irradiations from 0.4 to 2.3 MeV

Gallium arsenide concentrator cells were irradiated with electrons with energies varying from 0.4 to 2.3 MeV, and their electrical performance was measured. The cells are 5 x 5 mm square with a 4-mm diameter illuminated area. At each of four different electron energy levels (0.4, 0.7, 1.0, and 2.3 MeV), three n/p and two p/n cells were irradiated. I-V performance measurements were made prior to irradiation and at several intermediate fluence levels. The final fluence level was 3 X 10 to the 15th e/sq cm. It is concluded that the power degradation is independent of the temperature at which it is measured.

Curtis, Henry B.↗
NASA NTRS2000

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane↗
NASA NTRS1979

Voltage-current-power meter for photovoltaic solar arrays

A meter is disclosed for measuring the voltage, current, and power (VIP) parameters of a photovoltaic solar array, or array module, under sunlight operating conditions utilizing a variable load connected across the array and controlled by a voltage regulator which responds to the difference between the output voltage of the array and a programmed test voltage from a source which generates a single ramp voltage for measuring and recording current as a function of voltage, repeated ramp voltages at a high rate for peak output measurements or a DC voltage for VIP measurements at selected points on the I-V characteristic curve of the array. The voltage signal from a current sensing element, such as a shunt resistor in series with the variable load, is compared with the output current of a reference solar cell to provide a normalizing signal to be added to the signal from the current-sensing element in order to provide a record of array current as a function of array voltage, i.e., for all load conditions from short circuit to open circuit. As the normalized current is thus measured, an analog multiplier multiplies the array voltage and normalized current to provide a measurement of power. Switches are provided to selectively connect the power, P, current, I, or voltage, V, to a meter, directly or through a peak detector. At the same time any one of the parameters V, I and P may be recorded as a function of any other parameter.

Ross, Ronald G.↗
DOE OSTI2025

Field Testing of PID-p Susceptible Bifacial PERC Modules: Impact of Light, Voltage and Module History ​

This work investigates the potential induced degradation-polarization (PID-p) of bifacial passivated emitter and rear contact (PERC) modules installed in the field at the Florida Solar Energy Center. 22 modules were stressed over 1 year under various voltage (-1500V, -3500, +1500V) and mounting configurations (close to ground, 2 meters from ground, close to roof). The positively stressed modules were anticipated to have experiences PID-p on their front side. However, no degradation was observed, as the light-induced recovery effect effectively counteracted the degradation. The negatively stressed modules experienced Pmax drops during 2 weeks before stabilizing at 5-6% loss. I-V and EL characteristics suggest a PID-p degradation on the rear side. Lower degradation rates are observed with lower voltage and when the mounting configuration allows more albedo light on the rear side to compensate for the degradation. PID-p is observed to stabilize at similar level for the voltage and mounting configuration tested with slightly lower Pmax in winter. EL imaging reveals that cells are not degrading at the same rate across a module. Some cells get darker and then brighter which corresponds to the silicon/passivation interface going through depletion and then inversion when enough positive charges are accumulated. After full light-recovery, the modules were tested again along with 22 brand-new ones to assess the impact of the module history. Results confirmed the trends observed in the first year with PID-p occurring at voltage as low as -600V and recovered modules degrading faster than brand-new ones.

14 SOLAR ENERGY↗