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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

High-rate heavy-ion tracking using MWPCs and PPACs with an Anti-Discharge Unit

This work reports on the development of two robust, heavy-ion beam tracking concepts operating at low pressure (< 15 Torr) for high rate applications (> 200 kHz). The first concept consists of a Multi-Wire Proportional Counter (MWPC) with a central anode consisting of 12 μm Au-plated Tungsten wires spaced 1 mm from each other. The anode grid is sandwiched between two segmented cathodes aligned orthogonally in the two dimensions for (x,y) particle localization. The second detector is a Parallel-Plate Avalanche Counter (PPAC) that uses the same readout geometry as the MWPC, but replaces the wire anode with a 150 nm silver layer deposited on both sides of a thin (< 1 mg/cm 2 ) polypropylene foil. Additionally, the bias circuitry for the PPAC anode central foil is equipped with an Anti-Discharge Unit (ADU) to prevent transitions from proportional operation to streamer formation, thereby avoiding damaging discharges. The localization capability of both detectors was tested with a low-rate alpha-particle source (241-Am). A position resolution of < 1 mm (FWHM) was achieved under stable, high-gas-gain (> 1000) operating conditions. Their performance in terms of detection efficiency as a function of the isotope charge (Z) was determined by irradiating the detectors with a cocktail beam (Z ≤ 15) with energy of ∼ 100 MeV/u. Full detection efficiency is maintained for all available fragments under optimal operational conditions (i.e., voltage bias). Full detection efficiency was achieved at rates above 200 kHz by irradiating the detectors with a 1 cm diameter 238 U beam at an energy of 143 MeV/u.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Measured gain suppression in FBK LGADs with different active thicknesses

In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. Using the CENPA Tandem accelerator at the University of Washington, the response of LGADs with different thicknesses to MeV-range energy deposits from a proton beam were studied. Three LGAD prototypes of 50 μm, 100 μm, and 150 μm were characterized. The devices' gain was determined as a function of bias voltage, incidence beam angle, and proton energy. This study was conducted in the scope of the PIONEER experiment, an experiment proposed at the Paul Scherrer Institute to perform high-precision measurements of rare pion decays. LGADs are considered for the active target (ATAR), and energy linearity is an important property for particle ID capabilities.

Particle tracking detectors↗
DOE OSTI2023

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation.

Physics↗
DOE OSTI2020

Humidity sensitivity of large area silicon sensors: Study and implications

The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. Here we present an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front- end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high-speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel. Another novel low-power circuit called Pseudo-Thyristor presented in another document will replace traditional discriminator and the Regenerative Current Mirror plus Pseudo- Thyristor will provide a full solution for the silicon pixel low-power frontend ASIC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

A novel silicon photomultiplier readout architecture for low-light applications

In this article we describe the photon detection readout electronics for the nEDM@SNS experiment. The chosen "photon counting" architecture, which utilizes high-efficiency silicon photomultipliers (SiPMs) and is appropriate for low-light applications, allows the use of a relatively high SiPM operating voltage. This maximizes photon detection efficiency and minimizes gain/efficiency voltage-dependence while eliminating direct optical cross-talk.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Preliminary benchmarks and analysis of boundary conditions in a trenched microstructured silicon radiation detector

Microstructured neutron detectors have the benefit of enhanced neutron detection efficiency as compared to planar devices, achieved by etching 6 LiF-filled trenches on the top surface of a silicon PIN diode. This sensor geometry results in a complex electric field distribution and depletion characteristics within the diode under reverse bias. For the first time on record, the effects of a fixed oxide charge on the microstructured device depletion characteristics and mobile carrier transport is investigated. Prototype detectors were fabricated with non-conformal surface doping. Capacitance voltage and current voltage measurements were performed for these prototypes and compared with COMSOL Multiphysics simulations. A spectral response from an 241Am alpha particle source was acquired and analyzed. It was found that monoenergetic alpha particles produce three prominent peaks in the pulse height spectrum output by the device. The peaks were confirmed by simulations to correlate with dead layers and incident trajectories into the microstructure. It was also found that significant differences in pulse rise time result, corresponding with events arriving in a low-field region in the fins and a high-field region in the bulk. Geant4 was utilized for radiation transport, interaction modeling, and benchmarking the spectral data. The results of this simulation work provide confidence in the ability to attain and benchmark electrical characteristics and spectral data for semiconductor radiation detectors employing complex microstructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Development of planar P-type point contact germanium detectors for low-mass dark matter searches

The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of ~ 0.7 eV requires internal amplification of the charge signal. This can be achieved through high electric field that accelerates charge carriers, which can then generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. We report the development of a planar point contact Ge detector in terms of its fabrication and the measurements of its leakage current and capacitance as a function of applied bias voltage. With the determination of the measured depletion voltage, the field distribution is calculated using GeFiCa, which predicts that the required electric field for internal charge amplification can be achieved in proximity to the point contact. The energy response to an Am-241 source is characterized and discussed. We conclude that such a detector with internal charge amplification can be used to search for low-mass dark matter.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Study of perovskite CsPbBr 3 detector polarization and its mitigation with ultrahigh x-ray flux

High-flux capable semiconductor x-ray detectors are essential in various applications, but the detrimental effects of detector polarization limit their use in many cases. Here, for this work, we studied the polarization of perovskite CsPbBr 3 semiconductor detectors using ultrahigh flux synchrotron x rays (10 6 –10 12 photons s –1 mm –2 at 58.61 keV). The CsPbBr 3 detectors did not show immediate polarization prominently until a flux higher than 10 10 photons s –1 mm –2 . Using the pump-and-probe technique, we visualized the spatial and temporal effects of polarization. The polarized region, represented by reduced photocurrent, extended beyond the area under direct irradiation, and the reduced photocurrent persisted after potential de-polarization treatments. We found that stronger applied electric fields and fewer carrier traps can mitigate polarization, represented by less photocurrent deficit. By examining the detectors’ current response under controlled ambient light, low, and high-flux x rays, we studied the trap filling and release behavior of CsPbBr 3 . We discovered that the polarization is caused by partial detector damage due to deep defects generated by ultrahigh flux x-ray irradiation. Our work provides insight into CsPbBr 3 polarization under extremely intense x-ray radiation and shows that reducing crystal defects and increasing detector bias voltage are effective solutions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

A 24-channel ultra-low-noise preamplifier for dN/dx measurements with drift tube detectors

Cluster counting $(dN/dx)$ is a promising method to enhance particle identification for gaseous detectors, especially in next-generation collider experiments like the FCC-ee, where good $π/K$ separation over a broad momentum range is essential. However, its implementation in large-scale systems has been limited by the challenging requirements for high-resolution signal amplification and readout. This paper presents a 24-channel ultra-low-noise preamplifier board designed for drift tube detectors to enable $dN/dx$ measurements. The three-stage amplification topology employs SiGe transistors and integrates dedicated noise-minimization techniques, achieving a charge gain of 21.11 mV/fC from 0.3 fC to 50 fC, a bandwidth of 542 MHz, and a voltage gain of 47.8 dB. The measured voltage noise density is 0.35 nV/$\sqrt{\textrm{Hz}}$ , surpassing most of the state-of-the-art preamplifiers for gaseous and silicon detectors. Validation tests conducted on the sMDT chambers at the CERN Proton Synchrotron test beam facility demonstrate that the proposed design meets the stringent preamplifier requirements for implementing the $dN/dx$ method in drift-tube detector systems, achieving an equivalent noise charge of 0.14 fC and a signal-to-noise ratio of 73 when operated with a He:iC 4 H 10 (90:10) gas mixture. The design also shows promise for broader application in other gaseous or semiconductor detectors.

Drift tube detector↗
DOE OSTI2024

ML-based calibration and control of the GlueX Central Drift Chamber

The GlueX Central Drift Chamber (CDC) in Hall D at Jefferson Lab, used for detecting and tracking charged particles, is calibrated and controlled during data taking using a Gaussian process. The system dynamically adjusts the high voltage applied to the anode wires inside the chamber in response to changing environmental and experimental conditions such that the gain is stabilized. Control policies have been established to manage the CDC's behavior. These policies are activated when the model's uncertainty exceeds a configurable threshold or during human-initiated tests during normal production running. Finally, we demonstrate the system reduces the time detector experts dedicate to calibration of the data offline, leading to a marked decrease in computing resource usage without compromising detector performance.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

A New Plasma Radar Concept for Simultaneous Magnetic and Density Measurements

An innovative, compact 288GHz interferometer has been fabricated, tested, installed and successfully demonstrated on the LAPD-U magnetized plasma at UCLA. The system takes advantage of frequency modulated (FM) radar techniques to deliver a compact heterodyne system. In addition, the reflected power from the source is taken advantage of to eliminate the need for additional quasi-optical components. Electron density in LAPD-U plasma has recently been increased substantially thereby requiring a higher frequency/shorter wavelength interferometer to avoid deleterious refractive effects. This system satisfies those needs. The system uses a 96GHz varactor tuned Gunn oscillator which passes to a passive tripler. This tripler has ~3% conversion efficiency. The 288GHz radiation is then coupled to free space using a so-called dual-mode or Pickett horn. The output 288GHz beam is then coupled to an aspheric lens manufactured from low-loss, high-density polyethylene. This lens is employed to collimate the emerging beam. Small axial adjustment of the lens position can also be used to create a slowly focusing beam so as to optimize the measured signal. In addition, up-down or side-to-side adjustment of the lens can be utilized to steer the beam vertically or horizontally – again to optimize alignment. The propagating beam passes through a beam splitter and then through a water-free, bubble-free fused quartz window into the LAPD-U vacuum vessel. The beam-splitter is a thin sheet of G10 which reflects a small fraction of the incident power (~5 %) towards a zero-bias detector optimized for the frequency range from 220 to 300GHz. Note that waveguides at this frequency have dimensions of ~0.9mm x 0.45mm and so have very large conductive losses. This drives the use of quasi-optical propagation. The detector requires no DC bias and is very responsive (> 1V/mW into 1MΩ). Radiation is coupled to the detector via a similar lens-horn arrangement used for the launch. This reflected beam acts as the local oscillator or reference millimeter-wave beam for the detector. The remainder of the launched source beam then enters the LAPD-U vacuum vessel and passes through the plasma at the mid-plane until reaching the opposing port which is closed off with an aluminum flange. This flange is used as a mirror to retroreflect the incident 288GHz beam back along its path. The retroreflected beam exits the input port but does NOT couple directly into the zero-bias detector. Instead, the majority of the return power continues towards the 288GHz source. As mentioned above the transmitted beam enters the source a second time. This would appear undesirable. However, at these frequencies multipliers are highly non-linear elements which results in a significant portion of the return beam (~20%) re-emerging from the multiplier and horn and then coupling via the G10 beam-splitter to the zero-bias detector. This approach eliminated the need for a second quasi-optical beam-splitter. The system is extremely compact measuring approximately 28 inches x 20 inches. The above did not explain how heterodyne operation was achieved. As mentioned above the Gunn oscillator is able to be varactor tuned. This allows a low voltage to be applied to control the operating frequency of the Gunn oscillator. During heterodyne operation a sawtooth shaped voltage is applied to the varactor at 750kHz using an 80MHz Arbitrary Waveform Generator (AWG). This voltage changes the Gunn frequency linearly during the up-sweep which is then reset abruptly at the sawtooth crash to be immediately followed by another linear sweep. Passage through the 288GHz multiplier triples the frequency change experienced by the electromagnetic wave. These frequency changes are small – tens of megahertz. This FM radar approach results in the launched electromagnetic wave frequencies at the detector for the reference and plasma wave to be different. The approximately 10 ns delay propagation delay for the plasma beam results in the local oscillator and plasma beams NOT having an identical frequency – there is in fact a fixed difference frequency. The frequency tuning level of the Gunn oscillator is then adjusted so that there is ONE cycle of this difference frequency during each linear ramp. During the sawtooth crash or downward re-sweep this one cycle replays in reverse but on a very fast timescale. The process then repeats. Low-pass filtering eliminates the fast re-sweep to leave a pure sine wave heterodyne signal. When the plasma is present it introduces a phase delay in the sine wave (caused by the extremely small Doppler shift resulting from the optical path length change). Of course, to measure this phase change we need a reference. This is simply obtained from an arbitrary waveform generator which provides a synchronized output pulse train which again is low pass filtered to obtain a 750kHz sinusoidal voltage reference for the interferometer. The interferometer was installed on LAPD-U where it has worked reliably and has established that electron densities exceeding 1x10 13 cm -3 are routinely achieved. In addition, the system sensitivity was able to easily observe density fluctuation at frequencies up to 50kHz. FM Radar techniques have enabled a full demonstration of a compact, sensitive, high frequency (288GHz/1mm) heterodyne interferometer.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Engineering of Lead Selenide Quantum Dot Based Devices and Core/Shell Heterostructures

Near infrared (NIR) emitting colloidal quantum dots (QDs) such as PbSe are interesting materials for implementation in various optoelectronic devices such as solar cells, photodetectors, and radiation detectors. Material properties like size tunable emission wavelengths, facile solution processability, the possibility of carrier multiplication and Auger assisted up-conversion, and high Z number provide PbSe QDs with unique advantages over many currently available commercial materials used in these devices. In this dissertation, after an introduction to QDs in general, we first focus on synthesis of PbSe-based heterostructured QDs for study via optical spectroscopy. PbSe/CdSe QDs synthesized via cation exchange reaction were used as seeds to study the proper conditions for further CdSe or CdS shell growth. Optical spectroscopy studies show that growth of thicker CdSe shells leads to tunable visible emission, while growth of thick CdS shells can greatly increase the photoluminescence quantum yield (PLQY) observed from the intermediate CdSe shell. NIR PL lifetimes can be greatly enhanced by the growth of CdS shells, due to strong delocalization of the hole wavefunction within the PbSe core, while the electron is delocalized throughout the QD including in the CdS shell, resulting in radiative lifetimes in the tens of microseconds. Two pulse delay measurements show that Auger assisted up conversion is also taking place in these engineered QD dot heterostructures. In the sections that follow, we look at QD devices, first with a focus on novel devices fabricated from PbSe QDs, using an amine synthesis method that allows for facile in-solution ligand exchange. QD film mobilities are measured for PbSe QDs capped with various short ionic ligands. Carrier densities in PbSe QD films are calculated from C-V measurements, showing for the first time that carrier densities can be modulated by simply changing the capping ligand. vii Radiation detectors utilizing PbSe QDs capped with KI and NH4I ligands show tangible response to incident alpha radiation. Current output response to alpha radiation is dependent on strength of radiation source and amount of bias voltage applied. In the final section a critical review of hybrid layered 2D-QD photodetectors is presented. In a typical example, PbSe and PbS QDs act as the absorbing layer in phototransistor devices which utilize layered 2D materials such as graphene and transition metal dichalcogenides as transport layers. Resulting devices display high gains and improved directivities compared to QD only and 2D only devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Cryogenic Front-End ASICs for Low-Noise Readout of Charge Signals

This paper presents design details and measurement results of LArASIC, a front-end application specific integrated circuit (ASIC) designed for low-noise readout of charge signals generated in neutrino study experiments within liquid argon time projection chambers. LArASIC comprises of 16-channels of programmable charge amplification and pulse shaping stages that provide a voltage readout proportional to the input charge and was optimized for operation at liquid argon temperature, i.e., 89 K. The chip was fabricated in a 180 nm CMOS process. Measurements at liquid nitrogen temperature, i.e., 77 K, indicate that the channel outputs have high linearity (INL < 0.1%) within the operating range, an equivalent noise charge of 534 electrons for a peaking time of 1 µs and a detector capacitance of 150 pF, and a worst-case inter-channel cross-talk of 0.35%. The paper also presents design choices made in the process of migrating LArASIC to CHARMS, an ASIC to be fabricated in a 65 nm process that includes all features provided by LArASIC, along with additional digital programmability for improved robustness and flexibility. CHARMS is intended for use in future high-energy physics experiments that require high-resolution charge or light readout with shorter pulse peaking times.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Integration of Nuclear Material Accounting Data and Process Monitoring Data for Improvement on Detection Probability in Safeguarding Electrochemical Processing Facilities (Final Technical Report)

The KAERI advanced spent fuel conditioning process (ACP) process is a critical component of the US- South Korean nuclear cooperation and the following “123 Agreement.” Its development has received considerable attention in both countries. The ACP is an electrochemical processing (pyroprocessing) that recycles over 96% of the used nuclear fuel (UNF). It is also intrinsically proliferation-resistant in theory. In normal operation, the U/TRU product is very hot radiologically. In addition, the Cm provides a high level of spontaneous neutrons, making the product unsuitable for weapon use. However, as pointed in some study, “the need for safeguards to protect against the diversion and misuse of separated plutonium applies essentially equally to all grades of plutonium.” As pointed by many studies, the well-established traditional Nuclear Material Accounting (NMA) approach cannot be directly applied to electrochemical processing because of the lack of an input accountability tank, the non-continuous material flow, and the unsatisfactory level of confidence in sampling methods. Therefore, nuclear safeguards remain a grand challenge in the developing of commercial electrochemical separations facilities, especially around the heart of such facilities, the electrorefiner (ER) systems. In contrast to NMA data, process monitoring (PM) data is normally an indirect measurement of the SNM and is acquired much more frequently. In a broad sense, PM includes monitoring by various types of equipment, e.g. radiation detectors, cameras, voltage, current sensors. Because it is already being collected by the operator, the additional cost to safeguards is low. It has long been believed that PM data can supplement NMA data and help improve safeguards, although the benefits are hard to quantify. The U.S. DOE’s Material Protection, Accounting, and Control Technology (MPACT) campaign has made substantial investments into innovative PM sensor technology and predictive model development for real- or near real-time measurement and prediction of molten salt density and level, salt composition and actinide concentration especially Pu, the cell voltage, and the cell current to supplement traditional NMA. For aqueous-based reprocessing facilities, it is reported that PM, integrated with traditional NMA, have a high detection probability for specific diversions. For electrochemical reprocessing, preliminary studies have shown that PM data can support traditional NMA in various ways by providing a basis to estimate some of the in-processing nuclear material inventories. Despite early success, further studies on fusion of PM data and NMA data are still needed, which is the goal of this proposed work.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Calibration of the sub-aperture backscatter system on OMEGA EP

The sub-aperture backscatter (SABS) diagnostic on the OMEGA EP Laser System is a diagnostic that is used to measure the backscattered and sidescattered light during laser–plasma interaction experiments that are relevant to high-energy-density physics and inertial confinement fusion. The diagnostic collects stimulated Brillouin scattering (SBS) UV light at around 351 nm and stimulated Raman scattering (SRS) in the visible-light regime in the 420–720-nm-wavelength range and provides spectrally and temporally resolved information. Five 1-in. light collectors, composed of a lens, ground glass diffuser, and coupling into a 300-μm fiber, are positioned behind the last steering mirror on one of the four beamlines to catch a portion of the beam cross section (~1.5%) of the emission that is scattered into the beamline. The SRS light is collected in two light collectors, combined, and transported via graded index fibers to a streaked spectrometer. The SABS-SRS streak spectrometer has a temporal and spectral resolution of 100 ps and 1 nm, respectively. Three other light collectors collect, combine, and transport the SBS signal to a Hamamatsu high-voltage photodiode, where an oscilloscope digitizes the data, providing a time resolution of better than 1 ns. To obtain an absolute energy calibration of SRS measurements, light signals of known energy and wavelength were injected into the light collectors one at a time. The resulting counts on the streak camera charge-coupled device for SRS are then correlated with the incident fluence of scattered light at the light collector in order to allow a quantitative assessment of streak camera sensitivity to determine the energy of the scattered light during experiments. The measurements were performed in situ from the light collectors to the detectors. Other offline measurements provided the transmission of the optics between the target chamber center and the light collectors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Production and testing of the powerboard for ATLAS ITk Strip barrel modules

The upgrade of the ATLAS ITk strips detector for HL-LHC will employ a custom PCB (powerboard) for on-module DC-DC conversion, HV switching, and monitoring. Production of about 14100 of such PCBs with high reliability is a big challenge. In this paper we will present the production procedure and quality control (QC) testing system for the powerboards to be installed on ITk Strip barrel modules. During production, about 150 powerboards will be produced every week. Each powerboard will need to pass QC tests before they are assembled to module. The QC tests include thermal cycling between -35 °C and 40 °C, soak test (continuous running of DC-DC converter at high load at 20 °C), and basic functionality and characterization electrical tests of the low voltage (LV), high voltage (HV), and monitoring functions of the powerboard. A custom QC test system is described, which is based on a reusable PCB (active board) with all testing circuits, a one-time powerboard carrier card, and a Z-turn SoC board which hosts and runs the testing program. The production procedure and QC test system has been tested with 400 powerboards during pre-production, and the system has been proven ready for production with the desired testing program, speed, safety, and cost. Performance and typical failures of powerboards observed during the QC test of pre-production powerboards is also presented.

47 OTHER INSTRUMENTATION↗