Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “High Voltage Detector”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

High resolution, two-dimensional imaging, microchannel plate detector for use on a sounding rocket experiment

We discuss a high resolution microchannel plate (MCP) imaging detector to be used in measurements of Doppler-shifted hydrogen Lyman-alpha line emission from Jupiter and the interplanetary medium. The detector is housed in a vacuum-tight stainless steel cylinder (to provide shielding from magnetic fields) with a MgF2 window. Operating at nominal voltage, the four plate configuration provides a gain of 1.2 x 10 exp 7 electrons per incident photon. The wedge-and-strip anode has two-dimensional imaging capabilities, with a resolution of 40 microns FWHM over a one centimeter diameter area. The detector has a high quantum efficiency while retaining a low background rate. A KBr photocathode is used to enhance the quantum efficiency of the bare MCPs to a value of 35 percent at Lyman-alpha.

Bush, Brett C.↗
DOE OSTI2021

Characterisation of signal-induced noise in Hamamatsu R11265 Multianode Photomultiplier Tubes

Signal-induced noise is observed in Hamamatsu R11265 Multianode Photomultiplier Tubes, manifesting up to several microseconds after the single photoelectron response signal and localised in specific anodes. The mean number of noise pulses varies between devices, and shows significant dependence on the applied high-voltage. The characterisation of this noise and the mitigation strategies to perform optimal single-photon counting at 40 MHz, as required by the LHCb Ring-Imaging Cherenkov detectors, are reported.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

The Readout Electronics of the Mu2e Electromagnetic Calorimeter

The Mu2e electromagnetic calorimeter has been designed to measure ~100 MeV electrons with energy resolution σE/E <10%, time resolution σt < 500ps and position resolution σx < 1cm. The detector is composed of 1348 un-doped CsI crystals coupled to two large area Silicon Photomultipliers (SiPMs). Each SiPM is connected to a Front End Electronics (FEE) chip which hosts the shaping amplifier and the high voltage linear regulator. A group of 20 FEE is controlled by one Mezzanine Board (MB) which transmits the amplified signals to one Digitizer ReAdout Controller board (DiRAC). The DiRAC samples the waveforms at 200 MHz with 12-bit ADCs, packs the data according to the Mu2e custom format and transmits them to the event builder through an optical transceiver. To limit the number of pass-through connectors and the length of the cables, the readout and digitization electronics is located inside the detector cryostat and close to the interaction target. The boards will have to sustain a neutron fluence of about 5x10 10 n/cm 2 @ 1 MeVeq (Si)/y and a Total Ionizing Dose of about 12 krad, while working into a 1T magnetic field and a vacuum of 10 (-4) Torr. This harsh operational environment has made the electronics design challenging and required an extended campaign of tests to select and qualify the employed electronic components. In this paper we report on the board architecture and design, on the qualification of the prototypes, as well as on the results of the first vertical slice test of the Mu2e calorimeter.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2011

Coaxial charged particle energy analyzer

A non-dispersive electrostatic energy analyzer for electrons and other charged particles having a generally coaxial structure of a sequentially arranged sections of an electrostatic lens to focus the beam through an iris and preferably including an ellipsoidally shaped input grid for collimating a wide acceptance beam from a charged-particle source, an electrostatic high-pass filter including a planar exit grid, and an electrostatic low-pass filter. The low-pass filter is configured to reflect low-energy particles back towards a charged particle detector located within the low-pass filter. Each section comprises multiple tubular or conical electrodes arranged about the central axis. The voltages on the lens are scanned to place a selected energy band of the accepted beam at a selected energy at the iris. Voltages on the high-pass and low-pass filters remain substantially fixed during the scan.

Kelly, Michael A.↗
NASA NTRS1997

Solid-state Image Sensor with Focal-plane Digital Photon-counting Pixel Array

A solid-state focal-plane imaging system comprises an NxN array of high gain. low-noise unit cells. each unit cell being connected to a different one of photovoltaic detector diodes, one for each unit cell, interspersed in the array for ultra low level image detection and a plurality of digital counters coupled to the outputs of the unit cell by a multiplexer(either a separate counter for each unit cell or a row of N of counters time shared with N rows of digital counters). Each unit cell includes two self-biasing cascode amplifiers in cascade for a high charge-to-voltage conversion gain (greater than 1mV/e(-)) and an electronic switch to reset input capacitance to a reference potential in order to be able to discriminate detection of an incident photon by the photoelectron (e(-))generated in the detector diode at the input of the first cascode amplifier in order to count incident photons individually in a digital counter connected to the output of the second cascade amplifier. Reseting the input capacitance and initiating self-biasing of the amplifiers occurs every clock cycle of an integratng period to enable ultralow light level image detection by the may of photovoltaic detector diodes under such ultralow light level conditions that the photon flux will statistically provide only a single photon at a time incident on anyone detector diode during any clock cycle.

Fossum, Eric R.↗
NASA NTRS2002

Focal plane infrared readout circuit with automatic background suppression

A circuit for reading out a signal from an infrared detector includes a current-mode background-signal subtracting circuit having a current memory which can be enabled to sample and store a dark level signal from the infrared detector during a calibration phase. The signal stored by the current memory is subtracted from a signal received from the infrared detector during an imaging phase. The circuit also includes a buffered direct injection input circuit and a differential voltage readout section. By performing most of the background signal estimation and subtraction in a current mode, a low gain can be provided by the buffered direct injection input circuit to keep the gain of the background signal relatively small, while a higher gain is provided by the differential voltage readout circuit. An array of such readout circuits can be used in an imager having an array of infrared detectors. The readout circuits can provide a high effective handling capacity.

Pain, Bedabrata↗
NASA NTRS2011

Science Enabling ASICs and FEEs for the JUICE and JEO Missions

A family of science enabling radiation hard Application Specific Integrated Circuits (ASICs), Front End Electronics (FEEs) and Event Processing Systems, with flight heritage on many NASA missions, is presented. These technologies play an important role in the miniaturization of instruments -and spacecraft systems- at the same time increasing performance and reducing power. The technologies target time of flight, position sensing, and energy measurements as well as standard housekeeping and telemetry functions for particle and fields instruments, but find applications in other instrument categories too. More specifically the technologies include: the TOF chip, 1D and 2D Delay Lines with MCP detectors, for high precision fast and low power time of flight and position sensing; the Energy chip for multichannel SSD readout with time over threshold and standard voltage read out for TDC and ADC digitization; Fast multi channel read out chip with commandable thresholds; the TRIO chip for multiplexed ADC and housekeeping etc. It should be mentioned that the ASICs include basic trigger capabilities to enable random event processing in a heavy background of penetrators and UV foreground. Typical instruments include time of flight versus energy and look angle particle analyzers such as: plasma composition, energetic particle, neutral atom imaging as well as fast plasma and deltaE/E ion/electron telescopes. Flight missions include: Cassini/LEMMS, IMAGE/HENA, MESSENGER/EPPS/MLA/X-ray/MLA, STEREO, PLUTO-NH/PEPSSI/LORI, IBEX-Lo, JUNO/JEDI, RBSP/RBSPICE, MMS/HPCA/EPD, SO/SIS. Given the proven capability on heavy radiation missions such as JUNO, MMS and RBSB, as well diverse long duration missions such as MESSENGER, PLUTO and Cassini, it is expected that these technologies will play an important role in the particle and fields (at least) instruments on the upcoming JUICE and JEO missions.

Paschalidis, Nicholas↗
DOE OSTI2021

High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor

In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO2/n-4H-SiC MOS detectors not only demonstrated an excellent energy resolution of 0.42% (ΔE/E 100) for 5.48 MeV alpha particles but also caused a lower enhancement in the electronic noise components of the spectrometer compared with that observed for the best high-resolution Schottky barrier detectors. The MOS detectors also exhibited a high charge collection efficiency (CCE) of 96% at the optimized operating bias despite the presence of the oxide layer. A drift-diffusion model applied to the CCE vs gate bias voltage data revealed a minority (hole) carrier diffusion length of 24 μm. Capacitance mode deep level transient spectroscopy (C-DLTS) scans in the temperature range 84–800 K were carried out to identify the resolution limiting electrically active defects. Interestingly, the C-DLTS spectra revealed both positive and negative peaks, indicating the simultaneous presence of electron (majority) and hole (minority) trap centers. It has been inferred that at the steady-state bias for the C-DLTS measurement, the MOS detector operates in the inversion mode at certain device temperatures, causing holes to populate the minority trap centers and, hence, manifests minority carrier peaks as well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

A flexible test facility for liquid xenon detector development

As liquid xenon time projection chambers scale to ever-larger sizes, so too do the engineering challenges they pose. Here, we describe a large, flexible, multipurpose test facility capable of supporting the development of a number of key aspects of liquid xenon detector systems. Example applications of this facility include characterization of large-area light and charge sensor arrays, tests of xenon purification techniques and materials compatibility, and investigations into high-voltage phenomena. This facility uses an automated and remotely monitored cryo-cooling system based on immersion of the test chamber in a liquid bath rather than conductive coupling, leading to advantages in temperature and pressure stability, as well as increasing required response times in the case of cooling-power loss. Design advantages, operational procedures, and performance of the facility are described, as well as five examples of liquid xenon test chambers that use the facility.

Dark Matter detectors↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
NASA NTRS2002

Contactless conductivity detector for microchip capillary electrophoresis

A microfabricated electrophoresis chip with an integrated contactless conductivity detection system is described. The new contactless conductivity microchip detector is based on placing two planar sensing aluminum film electrodes on the outer side of a poly(methyl methacrylate) (PMMA) microchip (without contacting the solution) and measuring the impedance of the solution in the separation channel. The contactless route obviates problems (e.g., fouling, unwanted reactions) associated with the electrode-solution contact, offers isolation of the detection system from high separation fields, does not compromise the separation efficiency, and greatly simplifies the detector fabrication. Relevant experimental variables, such as the frequency and amplitude of the applied ac voltage or the separation voltage, were examined and optimized. The detector performance was illustrated by the separation of potassium, sodium, barium, and lithium cations and the chloride, sulfate, fluoride, acetate, and phosphate anions. The response was linear (over the 20 microM-7 mM range) and reproducible (RSD = 3.4-4.9%; n = 10), with detection limits of 2.8 and 6.4 microM (for potassium and chloride, respectively). The advantages associated with the contactless conductivity detection, along with the low cost of the integrated PMMA chip/detection system, should enhance the power and scope of microfluidic analytical devices.

NASA Center JPL↗
NASA NTRS1997

The Diagnostics of the External Plasma for the Plasma Rocket

Three regions of plasma temperature/energy are being investigated to understand fully the behavior of the plasma created by the propulsion device and the operation of the RPA. Each type of plasma has a RPA associated with it; i.e. a thermal RPA, a collimated RPA, and a high temperature RPA. Through the process of developing the thermal and collimated RPAs, the proper knowledge and experience has been gained to not only design a high temperature RPA for the plasma rocket, but to understand its operation, results, and uncertainty. After completing a literature search for, reading published papers on, and discussing the operation of the RPA with electric propulsion researchers, I applied the knowledge gained to the development of a RPA for thermal plasma. A design of a thermal RPA was made which compensates for a large Debye length and low ionized plasma. From this design a thermal RPA was constructed. It consists of an outer stainless steel casing, a phenolic insulator (outgases slightly), and stainless steel mesh for the voltage screens. From the experience and knowledge gained in the development of the thermal RPA, a RPA for collimated plasma was developed. A collimated RPA has been designed and constructed. It compensate for a smaller Debye length and much higher ionization than that existing in the thermal plasma. It is 17% of the size of the thermal RPA. A stainless steel casing shields the detector from impinging electrons and ions. An insulating material, epoxy resin, was utilized which has a negligible outgassing. This material can be molded in styrofoam and machined quite nicely. It is capable of withstanding moderately high temperatures. Attached to this resin insulator are inconel screens attached by silver plated copper wire to a voltage supply. All the work on the RPAs and thermal ion source, I performed in the University of Alabama in Huntsville's (UAH) engineering machine shop.

Karr, Gerald R.↗
NASA NTRS1979

Effects of 1-MeV gamma radiation on a multi-anode microchannel array detector tube

A multianode microchannel array (MAMA) detector tube without a photocathode was exposed to a total dose of 1,000,000 rads of 1-MeV gamma radiation from a Co-60 source. The high-voltage characteristic of the microchannel array plate, average dark count, gain, and resolution of pulse height distribution characteristics showed no degradation after this total dose. In fact, the degassing of the microchannels induced by the high radiation flux had the effect of cleaning up the array plate and improving its characteristics.

Timothy, J. G.↗
DOE OSTI2022

Machine Learning-based Cyber-Physical Anomaly Detection in Wide Area Voltage Control Systems

Wide-area voltage control systems (WAVCS) are widely deployed in power grid to improve the voltage stability in transmission system using Flexible AC Transmission System (FACTS) devices. The WAVCS relies on wide-area measurement and control signals for closed-loop control of FACTS devices to improve the transient voltage stability in power grid in real-time. Since the WAVCS utilizes a cyber-layer communication during its normal operation, they are susceptible to cyber attacks from adversaries which can lead to a voltage collapse if the attacks go undetected and unmitigated. This paper proposes a supervised machine learning (ML)-based anomaly detection algorithm for detecting various stealthy cyber attacks in the context of WAVCS cybersecurity. In particular, a fuzzy logic-based wide-area controller, as proposed by the Bonneville Power Administration (BPA), is implemented on the Kundur’s four machine two-area system that is integrated with a static var compensator (SVC) to improve voltage profile on sensitive buses. Later, different types of data integrity attacks, including pulse and ramp attacks, are considered on the wide-area measurement and control signals to analyze the performance of the proposed anomaly detector. Our experimental evaluation shows a promising performance with a high true-positive rate (more than 99%) and low false-negative rate (less than 1%) while exhibiting a small prediction time.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1979

Simplified phase detector

Tanlick sine-wave phase detector gives dc output voltage nearly proportional to phase difference between oscillator signal and reference signal. Device may be used for systems in which signal-to-noise ratio is high.

Hershey, L. M.↗
NASA NTRS2003

Detection of High-impedance Arcing Faults in Radial Distribution DC Systems

High voltage, low current arcing faults in DC power systems have been researched at the NASA Glenn Research Center in order to develop a method for detecting these 'hidden faults', in-situ, before damage to cables and components from localized heating can occur. A simple arc generator was built and high-speed and low-speed monitoring of the voltage and current waveforms, respectively, has shown that these high impedance faults produce a significant increase in high frequency content in the DC bus voltage and low frequency content in the DC system current. Based on these observations, an algorithm was developed using a high-speed data acquisition system that was able to accurately detect high impedance arcing events induced in a single-line system based on the frequency content of the DC bus voltage or the system current. Next, a multi-line, radial distribution system was researched to see if the arc location could be determined through the voltage information when multiple 'detectors' are present in the system. It was shown that a small, passive LC filter was sufficient to reliably isolate the fault to a single line in a multi-line distribution system. Of course, no modification is necessary if only the current information is used to locate the arc. However, data shows that it might be necessary to monitor both the system current and bus voltage to improve the chances of detecting and locating high impedance arcing faults

Gonzalez, Marcelo C.↗
DOE OSTI2021

Performance of microchannel plate based detectors for <25 keV x rays: Monte Carlo simulations and comparisons with experimental results

We present the results of Monte Carlo simulations of the microchannel plate (MCP) response to x rays in the 250 eV to 25 keV energy range as a function of both x-ray energy and impact angle and their comparisons with the experimental results from the X8A beamline at the National Synchrotron Light Source at Brookhaven National Laboratory. Incoming x rays interact with the lead glass of the microchannel plate, producing photoelectrons. Transport of the photoelectrons is neglected in this model, and it is assumed that photoelectrons deposit all their energy at the point they are created. This deposition leads to the generation of many secondary electrons, some fraction of which diffuse to the MCP pore surface where they can initiate secondary electron cascades in the pore under an external voltage bias. X-ray penetration through multiple MCP pore walls is increasingly important above 5 keV, and the effect of this penetration on MCP performance is studied. In agreement with past measurements, we find that the dependence of MCP sensitivity with angle relative to the pore bias changes from a cotangent dependence to angular independence and then proceeds to a secant dependence as the x-ray energy increases. We also find that with the increasing x-ray energy, the MCP gain sensitivity as a function of bias voltage decreases. The simulations also demonstrate that for x rays incident normal to the MCP surface, spatial resolution shows little dependence on the x-ray energy but degrades with the increasing x-ray energy as the angle of incidence relative to the surface normal increases. This agrees with experimental measurements. Simulation studies have also been completed for MCPs gated with a subnanosecond voltage pulse. In this work, we find that the optical gate profile width increases as the x-ray energy is increased above 5 keV, a consequence of increased x-ray penetration at energies >5 keV. Simulations of the pulsed dynamic range show that the dynamic range varies between ~100 and 1000 depending on x-ray energy and peak voltage.

47 OTHER INSTRUMENTATION↗
NASA NTRS2006

Recent Development of Sb-based Phototransistors in the 0.9- to 2.2-microns Wavelength Range for Applications to Laser Remote Sensing

We have investigated commercially available photodiodes and also recent developed Sb-based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-microns wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-microns wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 A/W corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9x10(exp 11) cm.Hz(exp 1/2)/W that is equivalent to a noise-equivalent-power of 4.6x10(exp -14) W/Hz(exp 1/2) (-4.0 V @ -20 C) with a light collecting area diameter of 200-microns. It appears that this recently developed 2-micron phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-microns and 1.9-microns, respectively.

Abedin, M. Nurul↗