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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗
NASA NTRS1980

Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range

Distributed feedback (DFB) pulsed laser operation has been demonstrated in stripe geometry Pb(1-x)Sn(x)Te double-heterostructures grown by liquid-phase epitaxy. The grating structure of 0.79 micron periodicity operates in first order near 12.8 microns and was fabricated prior to the liquid-phase epitaxial growth using holographic exposure techniques. These DFB lasers had moderate thresholds, 3.6 kA/sq cm, and the output power versus current curves exhibited a sharp turn-on free of kinks. Clean, single-mode emission spectra, continuously tunable over a range in excess of 20 per cm, centered about 780 per cm (12.8 microns), and at an average rate of 1.2 per cm-K from 9 to 26 K, were observed. While weaker modes could at times be seen in the spectrum, substantially single-mode operation was obtained over the entire operating range and to over 10 times threshold.

Hsieh, H.-H.↗
NASA NTRS1981

Ultrashort pulse generation in semiconductor lasers

Techniques to generate picosecond optical pulses from semiconductor lasers are reviewed. Experimental methods and results of theoretical analysis of active modelocking are presented. It is shown that modelocking will achieve the shortest pulses; but the use of a cumbersome external cavity will probably limit its practical use. Short pulses produced by direct modulation such as gain switching are considerably broader than those obtained by passive modelocking. However, no external cavity is needed; and the simplicity of this method makes it important to be explored further. Recent experimental results are discussed where picosecond pulses from a buried heterostructure laser diode with ultrashort current pulses obtained from a comb generator are generated. Also, 28 ps pulses were obtained at 2.5 GHz repetition frequency, using the gain switching method. An analytical analysis based on the rate equations shows qualitative agreement with our experimental results.

Auyeung, J.↗
NASA NTRS1982

Electrical properties of multi p-n junction devices

The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.

Katz, J.↗
NASA NTRS1982

Gain saturation in semiconductor lasers - Theory and experiment

The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.

Kasemset, D.↗
NASA NTRS1983

The AlGaAs single-mode stability

Single-mode spectral behavior with aging in constricted double heterojunction (CDH) lasers was studied. The CDH lasers demonstrated excellent reliability ( or = 1 million years extrapolated room-temperature MTTF) and single-mode operation after 10,000 hours of 70 C aging. The deleterious effects of laser-fiber coupling on the spectra of the diodes were eliminated through the use of wedge-shaped fibers. A novel high-power large optical cavity (LOC)-type laser was developed: the terraced-heterostructure (TH)-LOC laser, which provides the highest power into a single-mode (i.e., 50 mW CW) ever reported.

Botez, D.↗
NASA NTRS1983

Theory of silicon superlattices - Electronic structure and enhanced mobility

A realistic tight-binding band-structure model of silicon superlattices is formulated and used to study systems of potential applied interest, including periodic layered Si-Si(1-x)Ge(x) heterostructures. The results suggest a possible new mechanism for achieving enhanced transverse carrier mobility in such structures: reduced transverse conductivity effective masses associated with the superlattice band structure. For electrons in 100-line-oriented superlattices, a reduced conductivity mass arises intrinsically from the lower symmetry of the superlattice and its unique effect on the indirect bulk silicon band gap. An order of magnitude estimate of the range of mobility enhancement expected from this mechanism appears to be consistent with preliminary experimental results on Si-Si(1-x)Ge(x) superlattices.

Moriarty, J. A.↗
NASA NTRS1984

Microcrystalline silicon growth for heterojunction solar cells

Microcrystalline Si (m-Si) films with a 1.7eV energy bandgap and crystal size of several hundred A were e-beam evaporated on single crystalline Si (c-Si) to form a heterojunction with the substrate, or a window layer to a single crystalline p-n junction (heteroface structure). The goal was to enhance Voc by such uses of the larger bandgap m-Si, with the intriguing prospect of forming heterostructures with exact lattice match on each layer. The heterojunction structure was affected by interface and shunting problems and the best Voc achieved was only 482mV, well below that of single crystal Si homojunctions. The heteroface structure showed promise for some of the samples with p m-Si/p-n structure (the complementary structure did not show any improvement). Although several runs with different deposition conditions were run, the results were inconsistent. Any Voc enhancement obtained was too small to compensate for the current loss due to the extra absorption and poor carrier transport properties of the m-Si film.

Leung, D. C.↗
NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented is easily extended to many layer structures where it is more accurate than other existing transfer matrix or WKB models. The transmission resonances are compared to the bound state energies calculated for a finite square well under bias using either an asymmetric square well model or the exact solution of an infinite square well under the application of an electric field. The results show good agreement with other existing models as well as with the bound state energies. The calculations were then applied to a new superlattice structure, the variablly spaced superlattice energy filter, (VSSEP) which is designed such that under bias the spatial quantization levels fully align. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.

Summers, C. J.↗
NASA NTRS1986

High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79 percent and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8 deg (1.9 times diffraction limit) for a 100 micron-wide laser were obtained under pulsed conditions.

Larsson, A.↗
NASA NTRS1986

Lateral coherence properties of broad-area semiconductor quantum well lasers

The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.

Larsson, A.↗
NASA NTRS1987

Laser materials for the 0.67-microns to 2.5-microns range

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above.

Toda, Minoru↗
NASA NTRS1986

Semiconductor superlattice photodetectors

Superlattice photodetectors were investigated. A few major physical processes in the quantum-well heterostructures related to the photon detection and electron conduction mechanisms, the field effect on the wave functions and the energy levels of the electrons, and the optical absorption with and without the photon assistance were studied.

Chuang, S. L.↗
NASA NTRS1987

Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed.

Bhasin, K. B.↗
NASA NTRS1986

Confocal unstable-resonator semiconductor laser

GaAs/GaAlAs heterostructure lasers with a monolithic confocal unstable resonator were demonstrated. The curved mirrors satisfying the confocal condition were fabricated by etching. Close to threshold, the lasers operate in a single lateral mode with a nearly collimated output beam. A single-lobe far-field intensity distribution as narrow as 1.9-deg full width at half maximum was measured.

Salzman, J.↗
NASA NTRS1987

Theory of resonant tunneling in a variably spaced multiquantum well structure - An Airy function approach

A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented herein is easily extended to many layer structures where it is more accurate than other existing transfer matrix or Wentzel-Kramers-Brillouin (WKB) models. The transmission resonances are compared to the bound-state energies calculated for a finite square well under bias using either an asymmetric square-well model or the exact solution of an infinite square well under the application of an electric field. The results show good agreement with other existing models as well as with the bound-state energies. The calculations were then applied to a new superlattice structure, the variably spaced superlattice energy filter, which is designed such that under bias the spatial quantization levels fully align. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.

Brennan, K. F.↗
NASA NTRS1987

Tunneling-assisted impact ionization for a superlattice

Tunneling-assisted impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures is investigated and applied to a new superlattice structure. Multiquantum-well structures where the quantum-well regions are heavily doped and the undoped barrier regions are essentially insulating were considered. Incident hot electrons due to the applied electric field perpendicular to the heterointerface interact with the two-dimensional electrons confined to the quantum wells through Coulomb force. The resultant electrons can either have enough energy to get out of the wells or to tunnel through the triangular barriers. A new analytical approximation for the impact ionization rate is given which compares favorably with numerical results. The tunneling-assisted impact ionization rates and the ionization coefficients are calculated. It is shown that the tunneling effect reduces the ionization threshold and enhances the ionization rate significantly.

Chuang, S. L.↗