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At least 127 records · Page 7

Thermodynamic properties of liquid Si and Ge

Thermodynamic properties of liquid Si and Ge are calculated using standard variational techniques, with the hard-sphere system as a reference system. Third-order electron-ion pseudopotential contributions are included nonvariationally and are shown to have little effect on the free energy, although a larger one on the derivatives of the free energy. Two different model pseudopotentials are used and give similar results in good agreement with experiment.

Shih, W.-H.↗

Multi-variable control of the GE T700 engine using the LQG/LTR design methodology

The design of scalar and multi-variable feedback control systems for the GE T700 turboshaft engine coupled to a helicopter rotor system is examined. A series of linearized models are presented and analyzed. Robustness and performance specifications are posed in the frequency domain. The linear-quadratic-Gaussian with loop-transfer-recovery (LQG/LTR) methodology is used to obtain a sequence of three feedback designs. Even in the single-input/single-output case, comparison of the current control system with that derived from the LQG/LTR approach shows significant performance improvement. The multi-variable designs, evaluated using linear and nonlinear simulations, show even more potential for performance improvement.

Pfeil, W. H.↗

Solidification of Nb-Ge alloys in long drop tubes

The 30-m and 100 m-long drop tubes at the Marshall Space Flight Center have been used to obtain large undercooling in Nb-Ge alloys. Electron beam melting has been used to obtain drops approximately 2.5 mm in diam. In the 30-m tube, many specimens fell the length of the tube without solidifying, and were ultimately liquid-quenched in oil. The amount of undercooling prior to the quench was usually around 0.13 T(m). In the 100-m tube, freezing generally initiated during free fall, and the maximum undercooling was around 0.22 T(m). Microstructures were characterized by a combination of X-ray diffraction, optical microscopy, and scanning electron microscopy with energy dispersive analysis by X-rays. A variety of interesting microstructures was observed.

Bayuzick, R. J.↗

Exhaust-Gas Pressure and Temperature Survey of F404-GE-400 Turbofan Engine

An exhaust-gas pressure and temperature survey of the General Electric F404-GE-400 turbofan engine was conducted in the altitude test facility of the NASA Lewis Propulsion System Laboratory. Traversals by a survey rake were made across the exhaust-nozzle exit to measure the pitot pressure and total temperature. Tests were performed at Mach 0.87 and a 24,000-ft altitude and at Mach 0.30 and a 30,000-ft altitude with various power settings from intermediate to maximum afterburning. Data yielded smooth pressure and temperature profiles with maximum jet temperatures approximately 1.4 in. inside the nozzle edge and maximum jet temperatures from 1 to 3 in. inside the edge. A low-pressure region located exactly at engine center was noted. The maximum temperature encountered was 3800 R.

Walton, James T.↗

Ga:Ge array development

Work at the University of Arizona and at Lawrence Berkeley Laboratory on the development of a far infrared array camera for the Multiband Imaging Photometer on the Space Infrared Telescope Facility (SIRTF) is discussed. The camera design uses stacked linear arrays of Ge:Ga photoconductors to make a full two-dimensional array. Initial results from a 1 x 16 array using a thermally isolated J-FET readout are presented. Dark currents below 300 electrons s(exp -1) and readout noises of 60 electrons were attained. Operation of these types of detectors in an ionizing radiation environment are discussed. Results of radiation testing using both low energy gamma rays and protons are given. Work on advanced C-MOS cascode readouts that promise lower temperature operation and higher levels of performance than the current J-FET based devices is described.

Young, Erick T.↗

Intersubband infrared absorption in Ge(x)Si(1-x)/Si superlattice by photocurrent measurement

The intersubband IR absorption of holes in a Ge(x)Si(1-x)/Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first of the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.

Karunasiri, R. P. G.↗

Hyperfine magnetic field on Cd-111 in Heusler alloys Co2MnZ (Z = Si, Ga, Ge, Sn)

The time differential perturbed angular correlation method has been used to measure, as a function of temperature, the hyperfine magnetic field at Cd sites in the Heusler alloys Co2MnZ (Z = Si, Ga, Ge, Sn). The hyperfine fields, normalized to the total magnetic moment per formula unit, show an approximately linear trend toward more positive values with increasing lattice parameter.

Jha, S.↗

Performance of multiplexed Ge:Ga detector arrays in the far infrared

The performance of two multi-element, multiplexed Ge:Ga linear arrays under low-background conditions was investigated. The on-focal switching is accomplished by MOSFET switches, and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns, and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the highest responsivity was 584 A/W, the noise equivalent power was 1.0 x 10(exp -16) W/square root of Hz, and the read noise was 6100 electrons/sample. A detailed description of the test setup and procedure is presented.

Farhoomand, Jam↗

Relative populations of excited levels within the ground configuration of Si-like Cu, Zn, Ge and Se ions

Populations of 3p2 1D2, 3P1, 3P2 levels in Si-like Cu, Zn, Ge, and Se ions have been deduced from the measurements of absolute intensities of magnetic dipole transitions within the 3s2 3p2 ground configuration. The measured population ratios are compared with theoretical calculations based on the distorted-wave approximation for the electron collisions and a semiclassical approximation for the proton collisions. The observed deviation from the statistical distribution for the excited-level populations within the ground configuration along the silicon isoelectronic sequence is in agreement with theoretical prediction.

Datla, R. U.↗

Thermoelectric properties of pressure-sintered Si(0.8)Ge(0.2) thermoelectric alloys

The thermoelectric properties of 28 sintered Si(0.8)Ge(0.2) alloys, heavily doped with either B or P and prepared from powders with median particle sizes ranging from about 1 to over 100 microns, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size; however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. (1964) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.

Vining, Cronin B.↗

A technique for determining Urbach edge, midgap states and electric field in a-Si:H and a-(Si,Ge):H devices

A technique for measuring the Urbach energy of valence band tail states and midgap defect densities in a-Si:H and a-(Si,Ge):H devices is described. The Urbach energy is determined by measuring the quantum efficiency (QE) of delocalized holes in the devices, whereas the midgap state density (DOS) is estimated by measuring the QE of localized holes. The distinction between delocalized and localized holes is obtained from the behavior of the QE upon the application of reverse bias to the device. The QE of holes localized in midgap states increases significantly upon the application of reverse bias because of Frenkel-Poole tunneling, whereas the QE of holes in tail states does not show such an increase. It is shown that upon light soaking the Urbach edge does not change, but the midgap DOS does increase significantly. A primary consequence of the increase in DOS is a decrease in electric field in the low-field middle i region of the p-i-n cell. The decrease in electric field is experimentally estimated by fitting the increase in the reverse bias QE to Frenkel-Poole tunneling.

Dalal, Vikram L.↗

Monte-Carlo calculations of Ge detector escape-peak efficiencies

The authors present calculated first and second escape peak efficiencies for a variety of n-type coaxial Ge detectors using the Monte Carlo method. The results are given for right-circular cylindrical geometries of size ranging from 3-cm diameter x 3-cm thick to 8-cm diameter x 8-cm thick. For completeness, the intrinsic interaction and photopeak efficiencies for energies ranging from 20 keV to 20 MeV are listed. The calculations have been tested against experimental measurement and found to be in agreement to within the quoted errors (typically 10 percent). It is found that the ratio of the second escape peak efficiency to the first escape peak efficiency, R, is approximately independent of energy for small detector volumes but has a weak power law energy dependence for large volumes. It is shown that R also varies as an inverse power law of the active volume.

Owens, Alan↗

Performances Of Arrays Of Ge:Ga Far-Infrared Detectors

Report presents evaluation of performances of two electronic modules containing few-element linear focal-plane arrays of Ge:Ga photodetectors and associated multiplexing readout circuitry. Tested to demonstrate feasibility of many-element, two-dimensional focal-plane arrays of far-infrared detectors and associated circuitry for use in astronomical and other low-background scientific observations. Revealed deficiencies that must be overcome in future designs.

Mccreight, C.↗

Ge's Mobile, Coherent Doppler Lidar Test/Ealuation Facilities

The primary objective of this independent research and development (IR and D) program in support of the Laser Atmospheric Wind Sounder (LAWS) program is to develop and evaluate technologies with direct applications to spaceborne laser wind sensing, and to develop system level engineering experience in designing, operating, and modeling a coherent Doppler lidar. GE is developing a mobile, ground based coherent Doppler lidar as an end-to-end system level test facility to evaluate applicable technologies, verify system level performance issues, perform instrument calibration, and validate end-to-end system performance model predictions. Here, the primary focus is on a description of the ground based lidar system and the performance during the initial shakedown operation after system integration.

Sroga, J. T.↗

Evaluation of a far infrared Ge:Ga multiplexed detector array

The performance of a multielement Ge:Ga linear array under low-background conditions is investigated. On-focal plane switching is accomplished by MOSFET switches and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the responsivity was measured to be nominally 584 A/W, and the NEP was 1.0 x 10 exp -16 W/sq rt Hz. A detailed description of the test setup and the procedure is presented.

Farhoomand, Jam↗

Thermal conductivity of thermoelectric Si(0.8)-Ge(0.2) alloys

The thermal conductivity of heavily doped, n-type Si-Ge alloys has been studied from 300 to 1200 K. The scattering rate of several phonon scattering mechanisms has been calculated, including intrinsic scattering, mass defect and distortion scattering, phonon-electron scattering, and scattering by inclusions. These rates were then used to calculate the lattice thermal conductivity. The electronic component of the thermal conductivity was calculated from the calculated Lorenz ratio and measured values of the electrical conductivity. The total thermal conductivity was then compared to measured values for a specimen studied by Vining et al. (1991).

White, D. P.↗

Advanced Ge detectors for gamma-ray astronomy

Externally segmented coaxial detectors are fabricated for high efficiency in detecting gamma rays from cosmic sources with good sensitivities. The external background is reduced by enclosing the Ge detector array inside a thick active shield. The outer electrode of the coaxial detectors is subdivided into five segments, and internal beta activity is rejected by operating the segmented detector in a multisegment mode. The multisegment mode requires that events be detected in two or more segments before they are recorded. The full-energy-peak (FEP) efficiency of the unit is tested as a function of the incident gamma-ray energy and of the discriminator threshold of the segments. Measurements of beta-rejection and FEP efficiency are compared with Monte Carlo calculations, and good agreement is noted.

Varnell, Larry S.↗